CN2768198Y

CN2768198Y - Infrared antereflecting film enclosed type filament lamp

Info

Publication number: CN2768198Y
Application number: CN 200420054746
Authority: CN
Inventors: 杨国栋; 吴勇强; 陈民志
Original assignee: NANJING HUADONG ELECTRONIC PHOTOELECTRIC TECHNOLOGY Co Ltd
Current assignee: NANJING HUADONG ELECTRONIC PHOTOELECTRIC TECHNOLOGY Co Ltd
Priority date: 2004-12-28
Filing date: 2004-12-28
Publication date: 2006-03-29
Anticipated expiration: 2014-12-28

Abstract

The utility model relates to an infrared antereflecting film enclosed type filament lamp which is used for aircraft landing and sliding. The utility model is composed of a lens (or screen) (1), a luminous body (2), a reflection cover (ordinarily called of wimble) (3), an infrared antireflecting film (4), a guide wire (5) and a contact piece (6), wherein the luminous body (2) is welded on the guide wire (5) to form into a frame which is placed on the focus of the reflection cover (3); the inner surface of the reflection cover (3) is paraboloid; the inner wall of the paraboloid is plated with the infrared antireflecting film (4); the edges of the lens (1) and the reflection cover (3) are sealed to form a sealed glass cavity; the sealed glass cavity is eliminated with air and is fill with inert gas to be sealed and isolated, and the contact piece (6) is welded on an extraction electrode. The utility model adopts infrared antireflecting film to replace an aluminium film, so the luminous intensity and the service life of a lamp bulb are improved while the problem that the screen of a PAR lamp bursts is effectively solved. Thereby, the utility model decreases the quality loss and enhances the social economic benefit.

Description

The infrared anti-reflection film enclosed type incandescent lamp

Technical field

The utility model relates to a kind of infrared anti-reflection film enclosed type incandescent lamp, especially aircraft landing, slides and use the infrared anti-reflection film enclosed type incandescent lamp.

Background technology

Aircraft landing is at present slided light source and is generally used high-power enclosed type incandescent lamp, its luminous element to be generally incandescent filament (or halogen tungsten wick), makes according to the thermal radiation principle of luminosity, normally filament is heated to incandescent and luminous by electric energy.The general life-span of this lamp is about ten hours, and effectively irradiation distance is 30 meters, beam divergence angle level 12 degree, vertical 8 degree, colour temperature 2800～3200K.Reflector of lamp (being commonly called as " awl ") and lens (or screen) all are made up of the glass elements that accurately is pressed into.The awl inner surface of this series products is parabolic, paraboloidal inwall evaporation of aluminum, and luminous element places on the paraboloidal focus.The main glass capsulation technology of product is awl and being connected of platen edge.Because enclosed type incandescent lamp all requires to have the advantages that power is big, central light strength is high, beam divergence angle is little, general high color temperature lamp silk or the tungsten halogen lamp cored structure of adopting in the lamp design.Owing to be that thermal radiation is luminous, filament is when being transformed into visible light with electric energy, also to produce a large amount of infrared radiations and a spot of ultra-violet radiation, the aluminium film of paraboloidal inwall evaporation has reflected 80% infrared radiation that filament sends, make lens (or screen) surface temperature sharply rise, substantially exceed the thermal stability of glass, and make the screen and the awl edge sealing-in place the temperature difference above 120 ℃.Its result causes shielding and bursting that awl is connected, and influences the fail safe and the life-span of lamp.

Summary of the invention

Technical problem: the problem that the enclosed type incandescent lamp that the utility model provides a kind of infrared anti-reflection film enclosed type incandescent lamp can solve existing aluminizer shields and awl sealing-in place bursts.

Technical scheme: infrared anti-reflection film enclosed type incandescent lamp of the present utility model, by lens, luminous element, reflector, seal wire and contact chip constitute, luminous element is welded on to constitute on the seal wire shelves part, places on the focus of reflector, and the reflector inner surface is parabolic, lens and reflector carry out the edge sealing-in and form the sealed glass cavity, in charge into inert gas, on extraction electrode, weld contact chip, on the paraboloidal inwall of reflector, be coated with infrared anti-reflection film; Infrared anti-reflection film is by replacing ZnS coating and the SiO of even evaporation on the parabolic inwall of the reflector of lamp ₂Coating constitutes, and wherein innermost layer is a ZnS coating, and gross thickness is 50-600nm; ZnS coating and SiO ₂Two kinds of total numbers of plies of material of coating are the 21-25 layer.

Technique effect:

(1), the infrared radiation transmission of infrared anti-reflection film is up to about 90%, the screen temperature of improving back light descends significantly, the temperature difference between screen and the awl is reduced to about 20 ℃ by 120 ℃, has solved the fried screen problem of enclosed type incandescent lamp effectively;

(2), multilayer infrared anti-reflection film visible reflectance reaches about 95%, and the reflectivity of aluminium film only is about 80%.Test data shows that the central light strength improved lamp is nearly 20%, and the life-span is also brought up to more than the 20h from 10h, has reduced the light decay of lamp to a certain extent.

Description of drawings

Fig. 1 is a structure principle chart of the present utility model; Comprising lens 1, luminous element 2, reflector 3, seal wire 5, contact chip 6 and infrared anti-reflection film 4;

Fig. 2 is a multilayer infrared anti-reflection film film layer structure schematic diagram of the present utility model;

Comprising ZnS coating

41 and 425, SiO ₂Coating 42 and 424.

Embodiment

The infrared anti-reflection film enclosed type incandescent lamp, by lens (or screen) 1, luminous element 2, reflector (being commonly called as " awl ") 3, infrared anti-reflection film 4, seal wire 5 and contact chip 6 constitute, luminous element 2 is welded on to constitute on the seal wire 5 shelves part, place on the focus of reflector (being commonly called as " awl ") 3, reflector (being commonly called as " awl ") 3 inner surfaces are for parabolic, and paraboloidal inwall plates infrared anti-reflection film 4, and lens (or screen) 1 carries out the edge sealing-in with reflector (being commonly called as " awl ") 3 and form the sealed glass cavity, charge under the inert gas sealed-off at deaeration on the exhaust car afterwards, at last welding contact chip 6 on extraction electrode.

In the present embodiment, infrared anti-reflection film 4 is by replacing ZnS coating and the SiO of even evaporation on the reflector 3 parabolic inwalls of lamp ₂Coating constitutes, and wherein innermost layer is a ZnS coating 41, and the thickness of infrared anti-reflection film 4 is that gross thickness is 50-600nm, ZnS coating and SiO ₂Two kinds of total numbers of plies of material of coating are the 21-25 layer.

It is as follows to make the technological process of infrared anti-reflection film enclosed type incandescent lamp:

Plated film is prepended to baking oven about half an hour (about 180 ℃ of oven temperatures), and material is SiO and ZnS, actual plate for SiO ₂And ZnS, but because SiO ₂Fusing point is too high, and the existing equipment of resistance heating that adopts does not reach its requirement, so use SiO instead, charges into air in coating process, makes wherein oxygen and SiO reaction generate SiO ₂, owing to contain certain aqueous vapor in the air that charges into, so in fact, with existing technology, in coating process, vacuum degree is 8.0 * 10 ^-2

Preheat temperature: 120 ℃-200 ℃ of resistance wire oven temperatures;

Material therefor: SiO, ZnS;

Film plating process:

(1), degasification before the plating

Before plated film, awl to be plated put into 120 ℃-200 ℃ incubator, removes the steam of cone inner surface, to avoid since existing of steam coating quality is exerted an influence;

(2), anchor clamps are placed

Three set-points are at 45ly tiltedly put, and three anchor clamps are put into hemisphere, and anchor clamps are around self center rotation during evaporation, and three anchor clamps rotates around horizontal center simultaneously, with the uniformity of assurance rete;

(3), film system control

There is a correction baffle plate of accurately settling to place the center of three anchor clamps top, external photomultiplier, adjustable wavelength, thus control every layer thickness (the every layer of thickness that plates can be calculated by Fresnel formula); To reach maximum reflectivity.The film of being calculated by Fresnel formula is that every layer thickness is all different, and in actual applications, does not have this necessity, can every plating which floor changes thicknesses of layers after again, can reach the same effect like this;

(4), coating layers

Plate ZnS earlier, back plating SiO, the number of plies is determined on a case-by-case basis, and along with the increase of the number of plies, it is more and more slower that IR transmittance increases, and finally be tending towards 100%, and present used technology is the 21-25 layer;

(5), gas replenishment process

In evaporate process, when being heated to uniform temperature, when SiO begins to distil, charge into air in certain amount, for making airborne O ₂Generate SiO with the SiO reaction ₂, and the film material on the inner surface of actual epicone is SiO ₂Because charge into the cause of air, in the actual plated film, environment vacuum degree is 8.0 * 10 ^-2About.

Why adopt SiO and O ₂SiO is produced in reaction ₂And directly do not adopt SiO ₂, its reason is that existing equipment its heating-up temperature in coating process does not reach SiO ₂Fusing point, and adopt SiO and O ₂SiO is produced in reaction ₂Method, in coating process, just must charge into air, this evaporation coating method is except influencing vacuum degree, because water in air vapour content has uncertainty, also will produce certain influence to the rete firmness.

(6), aging post bake

The awl of plated film is carried out burin-in process with baking oven, the plated film awl is put into baking oven, earlier under 120 ℃ of states to its insulation, behind temperature stabilization, begin to heat up, make about 2 and a half hours that temperature reaches 420 ℃ in the baking oven, kept this temperature 2 hours, be cooled to normal temperature then gradually, can increase the rete firmness like this, prevent to produce obscission in later process or in using;

(7), test verification

Check comprises: the cone face behind the plated film should light, no stains, allows slight turning blue and stain, white point, should reject but have a strong impact on outer onlooker; Inner surface behind the plated film can not have demoulding, does not have to damage and impression of the hand; Cone behind the plated film phenomenon of damaging that do not have, full pattern is seen in the scratch of cone inner surface; Cone inner surface behind the plated film does not have influences the water of outward appearance mark; Do not allow anchor point on the cone and break, the fried edge damage breach that can cut down and influence the envelope screen;

Mainly be the test of rete firmness, adopt electricity to blow machine, temperature can reach 450 ℃, blows the bottom of examination awl inner surface, to reach the purpose of test rete firmness.For the underproof awl of rete firmness, can take off behind the film evaporation once more, twice plated film after the awl of disqualified upon inspection do and scrap processing.

Claims

1. infrared anti-reflection film enclosed type incandescent lamp, by lens (1), luminous element (2), reflector (3), seal wire (5) and contact chip (6) constitute, it is characterized in that luminous element (2) is welded on the last formation of seal wire (5) and shelves part, place on the focus of reflector (3), reflector (3) inner surface is parabolic, lens (1) carry out the edge sealing-in with reflector (3) and form the sealed glass cavity, in charge into inert gas, on extraction electrode, weld contact chip (6), on the paraboloidal inwall of reflector (3), be coated with infrared anti-reflection film (4).

2. infrared anti-reflection film enclosed type incandescent lamp according to claim 1 is characterized in that infrared anti-reflection film (4) is by the ZnS coating and the SiO that replace on the parabolic inwall of reflector (3) of even evaporation at lamp ₂Coating constitutes, and wherein innermost layer is ZnS, and gross thickness is 50-600nm; ZnS coating and SiO ₂Two kinds of total numbers of plies of material of coating are the 21-25 layer.