CN1632372A - Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating - Google Patents
Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating Download PDFInfo
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- CN1632372A CN1632372A CN 200410065953 CN200410065953A CN1632372A CN 1632372 A CN1632372 A CN 1632372A CN 200410065953 CN200410065953 CN 200410065953 CN 200410065953 A CN200410065953 A CN 200410065953A CN 1632372 A CN1632372 A CN 1632372A
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- reflector
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- sio
- infrared reflection
- reflection reducing
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Abstract
Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating are provided. The enclosed type incandescent lamp with infrared reflection reducing coating for airplane landing and sliding is composed of lens, illuminant, reflecting cover, lead and contacting sheet. The illuminant is welded on the guide wire to form mounting element which disposes on the focus of the reflector. The lens and reflector processes edge seal to form sealed glass cavity. The infrared reflection reducing coating is plated on the inner wall of the reflector paraboloid and is produced by the method of evapourating coating-film. The evapourating coating-film comprises: degassing before plating, plating ZnS firstly, and SiO2 secondly, evaporation coating alternately, finally solidifying. The invention effectively solves the problem of PAR lamp screen explosion, improves the bulb luminous intensity and service life.
Description
Technical field
The present invention relates to a kind of infrared anti-reflection film enclosed type incandescent lamp, especially aircraft landing, slide and use the infrared anti-reflection film enclosed type incandescent lamp.
Background technology
Aircraft landing is at present slided light source and is generally used high-power enclosed type incandescent lamp, its illuminator to be generally incandescent filament (or halogen tungsten wick), makes according to the heat radiation principle of luminosity, normally filament is heated to incandescent and luminous by electric energy.The general life-span of this lamp is about ten hours, and effectively irradiation distance is 30 meters, beam divergence angle level 12 degree, vertical 8 degree, colour temperature 2800～3200K.Reflector of lamp (being commonly called as " awl ") and lens (or screen) all are made up of the glass elements that accurately is pressed into.The awl inner surface of this series products is parabolic, paraboloidal inwall evaporation of aluminum, and illuminator places on the paraboloidal focus.The main glass capsulation technology of product is awl and being connected of platen edge.Because enclosed type incandescent lamp all requires to have the advantages that power is big, central light strength is high, beam divergence angle is little, general high color temperature lamp silk or the halogen tungsten lamp cored structure of adopting in the lamp design.Owing to be that heat radiation is luminous, filament is when being transformed into visible light with electric energy, also to produce a large amount of infra-red radiations and a spot of ultra-violet radiation, the aluminium film of paraboloidal inwall evaporation has reflected 80% infra-red radiation that filament sends, make lens (or screen) surface temperature sharply rise, substantially exceed the heat endurance of glass, and make the screen and the awl edge sealing-in place the temperature difference above 120 ℃.Its result causes shielding and bursting that awl is connected, and influences the security and the life-span of lamp.
Summary of the invention
Technical problem: the invention provides the preparation method of a kind of infrared anti-reflection film enclosed type incandescent lamp and infrared anti-reflection film, can solve the enclosed type incandescent lamp screen of existing aluminizer and the problem that awl sealing-in place bursts.
Technical scheme: infrared anti-reflection film enclosed type incandescent lamp of the present invention, by lens, illuminator, reflector, seal wire and contact chip constitute, illuminator is welded on to constitute on the seal wire shelves part, places on the focus of reflector, and the reflector inner surface is parabolic, lens and reflector carry out the edge sealing-in and form the sealed glass cavity, in charge into inert gas, on extraction electrode, weld contact chip, on the paraboloidal inwall of reflector, be coated with infrared anti-reflection film.
Infrared anti-reflection film is by replacing ZnS coating and the SiO of even evaporation on the parabolic inwall of the reflector of lamp
2Coating constitutes, and wherein innermost layer is ZnS, and gross thickness is 50～600nm; ZnS coating and SiO
2Two kinds of total numbers of plies of material of coating are the 21-25 layer.
The preparation method of the infrared anti-reflection film of infrared anti-reflection film enclosed type incandescent lamp of the present invention adopts the evaporating coating method, and in coating process, vacuum is 8.0 * 10
-2
The step of evaporation is:
Degasification before a, the plating: before plated film, reflector (3) put into 120 ℃-200 ℃ incubator, remove the steam of cone inner surface;
B, coating layers: in reflector (3), plate ZnS on the paraboloidal inwall earlier, back plating SiO
2, replacing even evaporation to the number of plies is the 21-25 layer;
C, gas replenishment process: in evaporate process,, charge into air, make airborne O when being heated to SiO when beginning to distil
2Generate SiO with the SiO reaction
2
D, aging post bake: the reflector of plated film (3) earlier under 120 ℃ of states to its insulation, behind temperature stabilization, begin to heat up, make about 2～3 hours that temperature reaches 400 ℃～450 ℃ in the baking oven, keep this temperature 2～3 hours, and be cooled to normal temperature then gradually.
Technique effect:
(1), the infrared radiation transmission of infrared anti-reflection film is up to about 90%, the screen temperature of improving back light descends significantly, the temperature difference between screen and the awl is reduced to about 20 ℃ by 120 ℃, has solved the fried screen problem of enclosed type incandescent lamp effectively;
(2), multilayer infrared anti-reflection film visible reflectance reaches about 95%, and the reflectivity of aluminium film only is about 80%.Test data shows that the central light strength improved lamp is nearly 20%, and the life-span is also brought up to more than the 20h from 10h, and has reduced the light decay of lamp to a certain extent.
Description of drawings
Fig. 1 is a structure principle chart of the present invention; Comprising lens 1, illuminator 2, reflector 3, seal wire 5, contact chip 6 and infrared anti-reflection film 4;
Fig. 2 is a multilayer infrared anti-reflection film film layer structure schematic diagram of the present invention; Comprising ZnS coating 41 and 425, SiO
2Coating 42 and 424.
The specific embodiment
The infrared anti-reflection film enclosed type incandescent lamp, by lens (or screen) 1, illuminator 2, reflector (being commonly called as " awl ") 3, infrared anti-reflection film 4, seal wire 5 and contact chip 6 constitute, illuminator 2 is welded on to constitute on the seal wire 5 shelves part, place on the focus of reflector (being commonly called as " awl ") 3, reflector (being commonly called as " awl ") 3 inner surfaces are for parabolic, and paraboloidal inwall plates infrared anti-reflection film 4, and lens (or screen) 1 carries out the edge sealing-in with reflector (being commonly called as " awl ") 3 and form the sealed glass cavity, charge under the inert gas sealed-off at deaeration on the exhaust car afterwards, at last welding contact chip 6 on extraction electrode.
In the present embodiment, infrared anti-reflection film 4 is by replacing ZnS coating and the SiO of even evaporation on the reflector 3 parabolic inwalls of lamp
2Coating constitutes, and wherein innermost layer is a ZnS coating 41, and the thickness of infrared anti-reflection film 4 is that gross thickness is 50～600nm, ZnS coating and SiO
2Two kinds of total numbers of plies of material of coating are the 21-25 layer.
It is as follows to make the technological process of infrared anti-reflection film enclosed type incandescent lamp:
Plated film is prepended to baking oven about half an hour (about 180 ℃ of oven temperatures), and material is SiO and ZnS, actual plate for SiO
2And ZnS, but because SiO
2Fusing point is too high, and the existing equipment of resistance heated that adopts does not reach its requirement, so use SiO instead, charges into air in coating process, makes wherein oxygen and SiO reaction generate SiO
2, owing to contain certain aqueous vapor in the air that charges into, so in fact, with existing technology, in coating process, vacuum is 8.0 * 10
-2
Preheat temperature: 120 ℃-200 ℃ of resistance wire oven temperatures;
Material therefor: SiO ZnS;
Film plating process:
(1), degasification before the plating
Before plated film, awl to be plated put into 120 ℃-200 ℃ incubator, removes the steam of cone inner surface, to avoid since existing of steam coating quality is exerted an influence;
(2), anchor clamps are placed
Three set-points are at 45ly tiltedly put, and three anchor clamps are put into hemispherical, and anchor clamps are around self center rotation during evaporation, and three anchor clamps rotates around horizontal center simultaneously, with the uniformity of assurance rete;
(3), film system control
There is a correction baffle plate of accurately settling to place the center of three anchor clamps top, external photomultiplier, adjustable wavelength, thus control every layer thickness (the every layer of thickness that plates can be calculated by Fresnel formula); To reach maximum reflectivity. the film of being calculated by Fresnel formula is that every layer thickness is all different, and in actual applications, does not have this necessity, can every plating which floor changes thicknesses of layers after again, can reach the same effect like this;
(4), coating layers
Plate ZnS earlier, back plating SiO, the number of plies is determined on a case-by-case basis, and along with the increase of the number of plies, it is more and more slower that IR transmittance increases, and finally be tending towards 100%, is generally the 21-25 layer;
(5), gas replenishment process
In evaporate process, when being heated to uniform temperature, when SiO begins to distil, charge into air in certain amount, for making airborne O
2Generate SiO with the SiO reaction
2, and the film material on the inner surface of actual epicone is SiO
2Because charge into the cause of air, in the actual plated film, environment vacuum is 8.0 * 10
-2About;
Why adopt SiO and O
2SiO is produced in reaction
2And directly do not adopt SiO
2, its reason is that existing equipment its heating-up temperature in coating process does not reach SiO
2Fusing point.And employing SiO and O
2SiO is produced in reaction
2Method, in coating process, just must charge into air, this evaporation coating method is except influencing vacuum, because water in air vapour content has uncertainty, also will produce certain influence to the rete firmness;
(6), aging post bake
The awl of plated film is carried out burin-in process with baking oven, the plated film awl is put into baking oven, earlier under 120 ℃ of states to its insulation, behind temperature stabilization, begin to heat up, make about 2 and a half hours that temperature reaches 420 ℃ in the baking oven, kept this temperature 2 hours, be cooled to normal temperature then gradually, can increase the rete firmness like this, prevent to produce obscission in later process or in using;
(7), test verification
Check comprises: the cone face behind the plated film should light, no stains, allows slight turning blue and stain, white point, should reject but have a strong impact on outer onlooker; Inner surface behind the plated film can not have demoulding, does not have to damage and impression of the hand; Cone behind the plated film phenomenon of damaging that do not have, full pattern is seen in the scratch of cone inner surface; Cone inner surface behind the plated film does not have influences the water of outward appearance mark; Do not allow anchor point on the cone and break, the fried edge damage breach that can cut down and influence the envelope screen;
Mainly be the test of rete firmness, adopt electricity to blow machine, temperature can reach 450 ℃, blow the bottom of examination awl inner surface, to reach the purpose of test rete firmness, for the underproof awl of rete firmness, can take off behind the film evaporation once more, twice plated film after the awl of disqualified upon inspection do and scrap processing.
Claims (3)
1. infrared anti-reflection film enclosed type incandescent lamp, by lens (1), illuminator (2), reflector (3), seal wire (5) and contact chip (6) constitute, it is characterized in that illuminator (2) is welded on the last formation of seal wire (5) and shelves part, place on the focus of reflector (3), reflector (3) inner surface is parabolic, lens (1) carry out the edge sealing-in with reflector (3) and form the sealed glass cavity, in charge into inert gas, on extraction electrode, weld contact chip (6), on the paraboloidal inwall of reflector (3), be coated with infrared anti-reflection film (4).
2. infrared anti-reflection film enclosed type incandescent lamp according to claim 1 is characterized in that infrared anti-reflection film (4) is by the ZnS coating and the SiO that replace on the parabolic inwall of reflector (3) of even evaporation at lamp
2Coating constitutes, and wherein innermost layer is ZnS, and gross thickness is 50～600nm; ZnS coating and SiO
2Two kinds of total numbers of plies of material of coating are the 21-25 layer.
3. the preparation method of the infrared anti-reflection film of an infrared anti-reflection film enclosed type incandescent lamp as claimed in claim 1 or 2 is characterized in that adopting the evaporating coating method, and in coating process, vacuum is 8.0 * 10
-2
The step of evaporation is:
Degasification before a, the plating: before plated film, reflector (3) put into 120 ℃-200 ℃ incubator, remove the steam of cone inner surface;
B, coating layers: in reflector (3), plate ZnS on the paraboloidal inwall earlier, back plating SiO, replacing even evaporation to the number of plies is the 21-25 layer;
C, gas replenishment process: in evaporate process,, charge into air, make airborne O when being heated to SiO when beginning to distil
2Generate SiO with the SiO reaction
2
D, aging post bake: the reflector of plated film (3) earlier under 120 ℃ of states to its insulation, behind temperature stabilization, begin to heat up, make about 2～3 hours that temperature reaches 400 ℃～450 ℃ in the baking oven, keep this temperature 2～3 hours, and be cooled to normal temperature then gradually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410065953 CN1632372A (en) | 2004-12-28 | 2004-12-28 | Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410065953 CN1632372A (en) | 2004-12-28 | 2004-12-28 | Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating |
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| Publication Number | Publication Date |
|---|---|
| CN1632372A true CN1632372A (en) | 2005-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410065953 Pending CN1632372A (en) | 2004-12-28 | 2004-12-28 | Process for making enclosed type incandescent lamp with infrared reflection reducing coating and process for preparing infrared reflection reducing coating |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257067B (en) * | 2007-02-28 | 2010-05-19 | 探微科技股份有限公司 | LED structure and method for manufacturing the same |
| US7821094B2 (en) | 2007-02-16 | 2010-10-26 | Touch Micro-System Technology Inc. | Light emitting diode structure |
| CN102052633A (en) * | 2010-12-23 | 2011-05-11 | 东莞市宝利节能有限公司 | Production process of nanometer light-reflecting bowl |
| CN111470783A (en) * | 2020-03-30 | 2020-07-31 | 大族激光科技产业集团股份有限公司 | Glass shell manufacturing method, glass shell and laser equipment |
-
2004
- 2004-12-28 CN CN 200410065953 patent/CN1632372A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7821094B2 (en) | 2007-02-16 | 2010-10-26 | Touch Micro-System Technology Inc. | Light emitting diode structure |
| CN101257067B (en) * | 2007-02-28 | 2010-05-19 | 探微科技股份有限公司 | LED structure and method for manufacturing the same |
| CN102052633A (en) * | 2010-12-23 | 2011-05-11 | 东莞市宝利节能有限公司 | Production process of nanometer light-reflecting bowl |
| CN111470783A (en) * | 2020-03-30 | 2020-07-31 | 大族激光科技产业集团股份有限公司 | Glass shell manufacturing method, glass shell and laser equipment |
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