CN2752935Y

CN2752935Y - Serial-type radio frequency MEMS switch

Info

Publication number: CN2752935Y
Application number: CN 200420111505
Authority: CN
Inventors: 于映; 罗仲梓
Original assignee: Fuzhou University
Current assignee: Fuzhou University
Priority date: 2004-11-16
Filing date: 2004-11-16
Publication date: 2006-01-18
Anticipated expiration: 2014-11-16

Abstract

The utility model relates to a serial-type radio frequency MEMS switch which solves the problems that contacting effect between a contact point and a signal line is influenced by the distortion and bend of the contact point in the prior art, and provides a serial-type radio frequency MEMS switch that can ensure that the contact point and waveguide are contacted stably. The utility model comprises a driving block, a contact point, a fixing end and a coplanar waveguide. The contact point is composed of an upper layer of thin film and a lower layer of thin film, and a downward convex area is arranged in the middle of the lower surface of the upper layer of thin film. An upward groove is arranged in the middle of the upper surface of the lower layer of thin film and is matched with the downward convex area of the upper layer of thin film. The radio frequency MEMS switch of the utility model decreases stress influence caused by multiple layers of thin films. Since the narrow strip of the lower end of a T-shaped structure has a supporting function, the lower end of the contact point becomes a plane, and the bending phenomenon of the original contact point is changed; consequently, the contact between the contact point and the waveguide is stable, and the switch performance is greatly improved.

Description

Tandem RF MEMS switch

Technical field:

The utility model relates to a kind of tandem RF MEMS switch.

Background technology:

The tandem mems switch of present made, usually adopt plane formula SiN film to hang oneself from a beam, steam the gold-plated film of plane formula and form two layer plane formula film contact structures under plane formula SiN overarm, the size of two-layer film is 14 (wide) * 80 (length) micron, and its structure as shown in Figure 1.Owing to can produce bigger stress in the plane formula SiN film manufacturing process, cause the contact to produce deformation, and cause bending, influencing contactor contacts with holding wire.

The utility model content:

The utility model has solved prior art because of the problem that contact effect of contact bending influencing contactor with holding wire, provides a kind of and can guarantee that contact and waveguide can stablize the tandem RF MEMS switch that contacts.

The technical solution of the utility model is as follows: it comprises: drive block, contact, stiff end, co-plane waveguide, the contact is made of two-layer film up and down, it is characterized in that: the centre of the lower surface of its topmost thin film is provided with to lower convexity, and it is right to upper groove that the centre of the upper surface of lower film was provided with matching to lower convexity of topmost thin film.

The contact of T type structure of the present utility model has been improved the deformation and the bending of contact effectively, makes between contact and the holding wire effectively to contact.The RF MEMS switch of T type contact structure of the present utility model has reduced the stress influence that causes because of plural layers, T type structure is because the fillet of its lower end has played support, make the lower end of contact become the plane, changed the buckling phenomenon of original contact, thereby make the contact become stable contact, the raising of switch performance is played a significantly greater role with contacting of waveguide.

Description of drawings:

Fig. 1 is the structural representation of existing two layer plane formula film contacts.

Fig. 2 is the structural representation of the utility model switch.

Fig. 3 is the structural representation of two layers of T shape structural membrane contact.

Label declaration: 1 drive block, 2 contacts, 21 topmost thin films, 22 lower films, 23 to lower convexity, 24 to upper groove, 3 stiff ends, the ground wire of 4 co-plane waveguides, the holding wire of 5 co-plane waveguides.

Embodiment:

Shown in Fig. 2,3, the utility model comprises: the ground wire of drive block 1, contact 2, stiff end 3, co-plane waveguide, the holding wire of co-plane waveguide; Contact 2 is made of two-

layer film

21 and 22 up and down, and it is characterized in that: the centre of the lower surface of its topmost thin film 21 is provided with to lower convexity 23, the centre of the upper surface of lower film 22 be provided with topmost thin film 21 to lower convexity 23 match mutually to upper groove 24.Topmost thin film is 1 micron a SiN film, and lower film is 0.15 micron a gold thin film.Bossing size: 8 (wide) * 0.2 (thick) micron.

Occupation mode: the contact part at tandem RF MEMS switch adopts T type structure, under the driving of electrostatic force, the contact can contact with holding wire and separate, and realizes the function of switch, and guarantee that switch can carry out stable contact when closure, reduce contact resistance.

Claims

1, a kind of tandem RF MEMS switch, comprise: drive block (1), contact (2), stiff end (3), co-plane waveguide, contact (2) is by two-layer film (21) and (22) constitute up and down, it is characterized in that: the centre of the lower surface of its topmost thin film (21) is provided with to lower convexity (23), the centre of the upper surface of lower film (22) be provided with topmost thin film (21) to lower convexity (23) match mutually to upper groove (24).

2, tandem RF MEMS switch according to claim 1 is characterized in that: topmost thin film (21) is 1 micron a SiN film, and lower film (22) is 0.15 micron a gold thin film.

3, tandem RF MEMS switch according to claim 2 is characterized in that: to lower convexity (23) portion size is wide micron, thick 0.2 micron.