CN2738400Y

CN2738400Y - Illuminating dipolar body

Info

Publication number: CN2738400Y
Application number: CNU2004200946424U
Authority: CN
Inventors: 简稚文
Original assignee: Individual
Current assignee: Individual
Priority date: 2004-10-26
Filing date: 2004-10-26
Publication date: 2005-11-02
Anticipated expiration: 2014-10-26

Abstract

The utility model provides an illuminating dipolar body, comprising a crystal plate (30). The bottom of the crystal plate (30) is provided with an anodic welding pad (32) and a cathode welding pad (34); the anodic welding pad (32) and the cathode welding pad (34) can be differentiated with different shapes; the metallic conduction glue can be directly bonded with the anode connecting line (42) and the cathode connecting line (44) of the base plate (40), and the electrical connection can be formed. The illuminating dipolar body of the utility model can save the manufacturing time and the cost; in addition, a reflective layer (50) and an insulating layer (60) are arranged between the crystal plate (30) and the base plate (40) so as to increase the illuminating effect, and the manufactured finished product has ultra-thin and reduced volume.

Description

Light-emittingdiode

Technical field

The utility model relates to a kind of light-emittingdiode, relates in particular to a kind of anode weld pad and light-emittingdiode of forming such as negative electrode weld pad by wafer and bottom surface thereof.

Background technology

In the electronic product, light-emittingdiode is because of the material development of science and technology, the advantage that not only has long working life, low power consumption, but also can send the light of multiple color, and brightness has had significant enhancing, so light-emittingdiode is not only extensively applied to various demonstration purposes, even the successful lighting field that sets foot in, its purposes is more and more widely.

Existing luminous disome as shown in Figure 6, be on substrate 10, to be provided with a wafer 12, this substrate 10 is provided with anode connection 11 and cathode connection 13, these wafer 12 bottom surfaces are respectively equipped with anode and negative electrode weld pad (not shown), plant tin ball 14 on it respectively, be electrically connected with the anode connection 11 and cathode connection 13 formations of substrate 10 respectively by this tin ball 14, and substrate 10 surfaces are provided with adhesive layer 16 with wafer 12 parcels therebetween.Yet because the cost of manufacture of tin ball 14 is high and technology that it is connected in the light-emittingdiode is complicated, need to make earlier tin ball 14, again tin ball 14 is attached at wafer 12 bottom surfaces, and make it to constitute with hot melt and be electrically connected with the anode connection 11 of substrate 10 and cathode connection 13, the length so expend time in, increased the cost of manufacture of light-emittingdiode, in addition owing to need seal up adhesive layer 16, so light-emittingdiode has certain thickness.

Another kind of light-emittingdiode commonly used as shown in Figure 7, be with anode connection 21 and cathode connection 23 conductings of lead 22 on a substrate 20 with wafer 24 and substrate 20, utilize adhesive layer 26 wherein again with the wafer parcel, yet owing to need just can make wafer 24 and anode connection 21 and cathode connection 23 conductings through lead 22, the length so expend time in, and the making of lead 22 also makes cost of manufacture increase, and lead 22 can influence the illumination effect of light-emittingdiode, owing to need seal up adhesive layer 26, therefore certain thickness arranged also in addition.

The utility model content

The technical problems to be solved in the utility model is to provide a kind of and shortens Production Time, reduces the extra-thin light-emittingdiode of cost.

The technical scheme in the invention for solving the above technical problem is, manufacture and design a kind of light-emittingdiode, comprise: a wafer, this wafer bottom surface is provided with anode weld pad and negative electrode weld pad and is electrically connected with the anode connection and the cathode connection formation of substrate respectively, and its special feature is: this wafer is directly to utilize anode connection and the cathode connection fixedly conducting of metallic conduction glue with anode weld pad and the negative electrode weld pad and the substrate of wafer bottom surface.

Described wafer be shaped as rhombus, its anode weld pad and negative electrode weld pad lay respectively at the two ends of rhombus wafer less than an angle of 90 degrees.Can increase the distance between anode weld pad and the negative electrode weld pad thus, the metallic conduction glue of avoiding the two poles of the earth too near and cause short circuit.

The anode weld pad of described wafer and negative electrode weld pad can be difformity so that distinguish.

In order to increase illumination effect, can not be provided with between the position of anode weld pad and negative electrode weld pad and substrate in described wafer bottom surface and be provided with a reflector layer.Can be provided with an insulating barrier between described reflector layer below and the substrate to increase insulation effect.

Compare with prior art, the utility model light-emittingdiode utilizes metallic conduction glue directly the anode weld pad and the negative electrode weld pad of wafer to be fixed and conducting with the anode connection and the cathode connection of substrate respectively, need not to weld lead, therefore and need not sealing, can shorten Production Time and reduce cost, and can reduce the height of finished product, because the thickness of substrate 40 is about 0.15mm, and wafer 30 highly is about 0.15mm or 0.2mm, so the about 0.3-0.35mm of total height, so can be made into extra-thin product; Anode weld pad and negative electrode weld pad are made difformity and can conveniently be distinguished; Therefore between wafer and substrate, set up reflector layer and insulating barrier in addition, and need not the lead conducting, can increase illumination effect, improved about 50% than the illumination effect of the light-emittingdiode of general weldering two-conductor line blue light.

Description of drawings

Fig. 1 is the stereogram of described wafer 30;

Fig. 2 is the stereogram with wafer 30 of difformity anode weld pad 32 and negative electrode weld pad 34;

Fig. 3 is the schematic diagram that a plurality of described wafers 30 are electrically connected with the anode connection 42 and the cathode connection 44 of substrate;

Fig. 4 is the profile that single wafer 30 is electrically connected with the anode connection 42 and the cathode connection 44 of substrate 40;

Fig. 5 is the profile when being provided with reflector layer 50 and insulating barrier 60 between wafer 30 and the substrate 40;

Fig. 6 is the profile of existing first kind of light-emittingdiode;

Fig. 7 is the profile of existing second kind of light-emittingdiode.

Embodiment

Be described in further detail below in conjunction with the most preferred embodiment shown in the accompanying drawing.

Fig. 1 is the schematic diagram of the wafer 30 of the utility model light-emittingdiode, this wafer 30 can be quadrangle, preferably can be rhombus, and be respectively equipped with anode weld pad 32 and negative electrode weld pad 34 in its bottom surface, this anode weld pad 32 and negative electrode weld pad 34 are in the same plane, preferably, this anode weld pad 32 and negative electrode weld pad 34 can lay respectively at two relative angle places of quadrangle wafer 30 or be positioned at the two ends of rhombus wafer 30 less than an angle of 90 degrees.Described anode weld pad 32 can be identical arbitrary shape with negative electrode weld pad 34, as the circle among Fig. 1; The shape of two weld pads also can be different, as shown in Figure 2, can be respectively square and circular, also can be any different shape, distinguish with convenient.

As shown in Figure 3 and Figure 4, described wafer 30 utilizes the anode connection 42 and cathode connection 44 conductings of metallic conduction glue and substrate 40, during making, earlier metallic conduction glue is coated on the anode connection 42 and cathode connection 44 of substrate 40, anode weld pad 32 and negative electrode weld pad 34 with wafer 30 touches with the metallic conduction splicing again, make described anode weld pad 32 and negative electrode weld pad 34 be fixed on the anode connection 42 of substrate 40 and the cathode connection 44 and constitute and conduct, again the anode connection 42 of single wafer 30 and conducting thereof and cathode connection 44 are cut bending light-emittingdiode.Described metallic conduction glue preferably can be elargol.

As shown in Figure 5, in order to reach better illumination effect, the position that anode weld pad 32 and negative electrode weld pad 34 are not set below wafer 30 is provided with reflector layer 50, the upwards reflection of light that wafer 30 is down dispersed, light is fully up dispersed, increase luminous efficiency, can between the anode connection 42 of the position that anode weld pad 32 and negative electrode weld pad 34 are not set below the reflector layer 50 and substrate 40 and cathode connection, be provided with a insulating barrier 60 in order to insulate in addition.

Claims

1, a kind of light-emittingdiode, comprise a wafer (30), this wafer (30) bottom surface is provided with anode weld pad (32) and negative electrode weld pad (34) and is electrically connected with the anode connection (42) and the cathode connection (44) of substrate (40) respectively, it is characterized in that: described wafer (30) is fixed the anode weld pad (32) and the negative electrode weld pad (34) of wafer (30) bottom surface and conducting with the anode connection (42) and the cathode connection (44) of substrate (40) by metallic conduction glue.

2, light-emittingdiode according to claim 1 is characterized in that: described wafer (30) be shaped as quadrangle.

3, light-emittingdiode according to claim 2 is characterized in that: described wafer (30) be shaped as rhombus.

4, light-emittingdiode according to claim 3 is characterized in that: the anode weld pad (32) of described wafer (30) lays respectively at the two ends of rhombus wafer less than an angle of 90 degrees with negative electrode weld pad (34).

5, according to the arbitrary described light-emittingdiode of claim 1 to 4, it is characterized in that: the anode weld pad (32) and the negative electrode weld pad (34) of described wafer (30) are in the same plane.

6, light-emittingdiode according to claim 5 is characterized in that: the anode weld pad (32) of described wafer (30) is inequality with the shape of negative electrode weld pad (34).

7, according to the arbitrary described light-emittingdiode of claim 1 to 4, it is characterized in that: described wafer (30) bottom surface is not provided with between the position of anode weld pad (32) and negative electrode weld pad (34) and substrate (40) and is provided with a reflector layer (50).

8, light-emittingdiode according to claim 7 is characterized in that: be provided with an insulating barrier (60) between reflector layer (50) below of described wafer (30) bottom surface and the substrate (40).