CN2727797Y - Low-temperature polysilicon display device - Google Patents
Low-temperature polysilicon display device Download PDFInfo
- Publication number
- CN2727797Y CN2727797Y CN 200420072111 CN200420072111U CN2727797Y CN 2727797 Y CN2727797 Y CN 2727797Y CN 200420072111 CN200420072111 CN 200420072111 CN 200420072111 U CN200420072111 U CN 200420072111U CN 2727797 Y CN2727797 Y CN 2727797Y
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- China
- Prior art keywords
- display device
- low
- low temperature
- multicrystal
- display panel
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Abstract
The utility model relates to a low-temperature polysilicon display device which comprises a display panel, an insulated base plate and a low-temperature polysilicon drive circuit. The surface of the insulated base plate is provided with a low-temperature polysilicon thin film, the low-temperature polysilicon drive circuit is formed on the low-temperature polysilicon thin film and is electrically connected with the display panel, and the display panel is formed by cutting a display base plate.
Description
[technical field]
The utility model is about a kind of display device, particularly about a kind of low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) display device.
[background technology]
The transistor driving LCD replaces cathode-ray tube (CRT) gradually because have frivolous advantage, becomes the main flow of display.But flourish along with Information technology, and the demand of high resolving power and information demonstration high capacity more, the tradition amorphous silicon film transistor drives the usefulness of LCD (a-si TFT LCD) and has not applied demand, so beginning to develop, industry has the more multicrystal display device of low temperature technology of excellent properties, it is advantageous that and driving circuit directly can be made in (System On Glass on the glass substrate, SOG), with the cost of effective reduction integrated drive electronics, in response to the demand in flat-panel screens market.
General multicrystal display device of low temperature technology is to utilize thin film deposition (Thin FilmDeposition), yellow light lithography (UV Lithography), etching (Etching) to make thin film transistor (TFT) and pixel electrode.But in thin film deposition manufacturing process, the laser annealing processing procedure is a gordian technique wherein, the success or not of this fabrication steps, and it is very big to influence tft characteristics.
Please refer to Fig. 1, be the structural representation of making the multicrystal display device of low temperature 200 of making on the low-temperature polysilicon film basis in a kind of prior art at the quasi-molecule laser annealing processing procedure, this multicrystal display device of low temperature 200 comprises insulated substrate 220, drive circuit area 210, a plurality of driving circuit 211, display panel areas 230 and a plurality of pixel cells 222 wherein.Wherein, drive circuit area 210 links together with display panel areas 230,222 of a plurality of driving circuits 211 and a plurality of pixel cells thereon, and a plurality of driving circuit 211 is followed a plurality of pixel cells 222 and is provided with.Owing to carry out the quasi-molecule laser annealing processing procedure on the insulated substrate 220 and non-once is finished, but repeatedly scanning is finished one by one, so the tft characteristics of the polysilicon membrane of making is also inhomogeneous, simultaneously, drive circuit area 210 is for the requirement (± 10～100mV) of tft characteristics uniformity coefficient, (± 1～2V) is much higher than the requirement of display panel areas 230 internal membrane transistor switch assemblies, and present stage the multicrystal display device of low temperature situation of generally arranging, driving circuit 211 is followed a plurality of pixel cells 222 and is distributed on the whole base plate, this is very high for the inhomogeneity difficulty of processing procedure, when the uniformity coefficient of quasi-molecule laser annealing processing procedure in somewhere on the insulated substrate 220 is not high, if certain driving circuit 211 bad waste product that cause only, then with the display panel areas that links to each other 230 no matter also can scrap by the good and the bad, cause yield low, increase cost.
[utility model content]
In order to overcome the problem that the multicrystal display device of low temperature yield is low and cost is high in the prior art, the utility model provides a kind of yield height and the low multicrystal display device of low temperature of cost.
The technical scheme that the utility model technical solution problem is adopted is: a kind of multicrystal display device of low temperature is provided, it comprises a display panel, an insulated substrate and a low temperature spathic silicon driving circuit, this insulated substrate surface has a low-temperature polysilicon film, this low temperature spathic silicon driving circuit is to be formed on this low-temperature polysilicon film, and electrically connect with this display panel, this display panel is to be formed by display base plate cutting.
Compared to prior art, because the driving circuit of the utility model multicrystal display device of low temperature and display panel are produced on the different substrate, driving circuit is concentrated in a certain substrate, can reduce the process variation factor to inhomogeneity influence degree, so can promote multicrystal display device of low temperature panel and driving circuit integral manufacturing yield, reduce production cost.
[description of drawings]
Fig. 1 is a kind of structural representation of multicrystal display device of low temperature of prior art.
Fig. 2 is the follow-up connection diagram of multicrystal display device of low temperature of the present utility model.
Fig. 3 is the drive circuit area partial schematic diagram of multicrystal display device of low temperature of the present utility model.
The partial schematic diagram of Fig. 4 multicrystal display device of low temperature of the present utility model.
[embodiment]
Seeing also Fig. 2 to Fig. 4, is the synoptic diagram of the utility model multicrystal display device of low temperature.This multicrystal display device of low temperature comprises driving circuit 311, pixel cell 322 and flexible circuit board 430, and wherein, the pin of driving circuit 311 utilizes flexible circuit board 430 or conductive material to combine with the film transistor matrix pin of pixel cell 322.In the utility model, driving circuit 311 is produced on the different small-medium size low-temperature polysilicon film substrates 310 and 330 with pixel cell 322, comprise a plurality of driving circuits 311 on the drive circuit area 310, comprise a plurality of pixel cells 322 on the display panel 330, follow-up with the driving circuit on the drive circuit area 310 311, with the pixel cell 322 on the display panel 330,, connect then according to the demand of practical production cutting.
Because driving circuit is in the requirement of tft characteristics uniformity coefficient, much higher than viewing area internal membrane transistor switch assembly, therefore the driving circuit and the display panel of multicrystal display device of low temperature of the present utility model are made on different substrate, driving circuit is concentrated in a certain substrate, can reduce the process variation factor to inhomogeneity influence degree, promote multicrystal display device of low temperature and driving circuit integral manufacturing yield, reduce production cost.
It is described that the utility model multicrystal display device of low temperature is not limited to above-mentioned embodiment.
Claims (3)
1. multicrystal display device of low temperature, comprise a display panel and a low temperature spathic silicon driving circuit, it is characterized in that: further comprise an insulated substrate, this insulated substrate surface has a low-temperature polysilicon film, this low temperature spathic silicon driving circuit is to be formed on this low-temperature polysilicon film, and electrically connects with this display panel.
2. multicrystal display device of low temperature as claimed in claim 1 is characterized in that: this display panel comprises a plurality of pixel cells.
3. multicrystal display device of low temperature as claimed in claim 1 is characterized in that: this low temperature spathic silicon driving circuit and this display panel are to electrically connect by flexible circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420072111 CN2727797Y (en) | 2004-07-24 | 2004-07-24 | Low-temperature polysilicon display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420072111 CN2727797Y (en) | 2004-07-24 | 2004-07-24 | Low-temperature polysilicon display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2727797Y true CN2727797Y (en) | 2005-09-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200420072111 Expired - Lifetime CN2727797Y (en) | 2004-07-24 | 2004-07-24 | Low-temperature polysilicon display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2727797Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414354C (en) * | 2004-04-28 | 2008-08-27 | 鸿富锦精密工业（深圳）有限公司 | Low temperature polysilicon display unit and method for fabricating the same |
| CN101592802B (en) * | 2008-05-28 | 2011-08-31 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
-
2004
- 2004-07-24 CN CN 200420072111 patent/CN2727797Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414354C (en) * | 2004-04-28 | 2008-08-27 | 鸿富锦精密工业（深圳）有限公司 | Low temperature polysilicon display unit and method for fabricating the same |
| CN101592802B (en) * | 2008-05-28 | 2011-08-31 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20140724 Granted publication date: 20050921 |