CN2726129Y - High-bright diode white light source - Google Patents

High-bright diode white light source Download PDF

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Publication number
CN2726129Y
CN2726129Y CNU2004200844793U CN200420084479U CN2726129Y CN 2726129 Y CN2726129 Y CN 2726129Y CN U2004200844793 U CNU2004200844793 U CN U2004200844793U CN 200420084479 U CN200420084479 U CN 200420084479U CN 2726129 Y CN2726129 Y CN 2726129Y
Authority
CN
China
Prior art keywords
light source
chip
white light
high brightness
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2004200844793U
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Chinese (zh)
Inventor
罗维鸿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shiye Changhui Science And Technology Shanghai Co ltd
Original Assignee
Shiye Changhui Science And Technology Shanghai Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shiye Changhui Science And Technology Shanghai Co ltd filed Critical Shiye Changhui Science And Technology Shanghai Co ltd
Priority to CNU2004200844793U priority Critical patent/CN2726129Y/en
Application granted granted Critical
Publication of CN2726129Y publication Critical patent/CN2726129Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model relates to a diode light source with high brightness, particularly a semiconductor luminous component and a device, and the diode light source comprises a chip, a conducting wire, a support reflecting bowl, a terminal, a resin head, etc. The utility model is characterized in that the support reflecting bowl is provided with a diode luminous chip of which the light source wave length is 400 to 490 nano and is connected with the terminal through the conducting wire, a fluorescent powder layer is coated on the luminous chip, and the light source formed by the devices is packed in the transparent resin head. Compared with the prior art, the utility model has the advantages of high brightness, good energy-saving effect, long service life, safety and reliability.

Description

A kind of high brightness diode white light source is described
Technical field
The utility model is a kind of high brightness diode white light source, and it relates to light emitting semiconductor device and device, is to improvement on present device and the product structure and the raising on the performance.
Background technology
Solid light source can send near monochromatic light wave, has the reliability height, long service life, the advantage that working range is wide.Light-emitting diode just belongs to a kind of like this light source.Light-emitting diode is as a kind of display device, and is not only energy-conservation but also pollution-free, but light-emitting diode has only the RGB isochrome usually, and luminous height is not high, can't be as a kind of lighting source.So, in lighting field, use solid, just must improve its luminous efficiency significantly.
Summary of the invention
The utility model is that purpose designs at the deficiency that exists in the above-mentioned present technology just a kind of high brightness of new structure diode white light source is provided, it is to utilize diode as illuminating source, and cooperation improves its luminous efficiency and brightness with suitable fluorescent material bisque, so that high-quality white light source to be provided, make it reach the needed index of illumination.Can be widely used in office, show automobile and various place.
The purpose of this utility model realizes by following measure:
This kind high brightness diode white light source, it comprises chip, lead, support reflector, terminal and the first-class assembly of resin, its structural design features is, support reflector and be provided with the led lighting chip that optical source wavelength is 400~490 nanometers, and be connected with terminal by lead, be coated with the layer of fluorescent powder layer on luminescence chip, the white light source that said apparatus constituted all is encapsulated in the transparent resin head.The chemical composition of the material that phosphor powder layer adopted that applies on the luminescence chip is: (Y 1-X-Y-Z-q, Gd X, DY y, Yb Z, Er q, Ce p) α(A1 L-n-m-k, Ga n, Sc K, In 1) βO 12, wherein, the α span is 2.8~3.2, and the β span is 4.98~5.02, and the X span is 0.05~0.65, and the Y span is 0.0001~0.05, the Z span is 0.0001~0.05, the q span is 0.0001~0.05, and the p span is 0.01~0.1, and the k span is 0.001~0.6, and the n span is 0.001~0.45, and the l span is 0.001~0.1.
Description of drawings
The drawing of accompanying drawing is described as follows;
Fig. 1 is a structural representation of the present utility model
Embodiment
Below with reference to drawings and Examples the utility model is further described:
Shown in accompanying drawing 1, this kind high brightness diode white light source, it comprises chip 1, lead 2, supports assemblies such as reflector 3, terminal 4 and resin head 5, its structural design features is, support reflector 3 and be provided with the led lighting chip 1 that optical source wavelength is 400~490 nanometers, this led lighting chip 1 is the blu-ray type light-emitting diode chip for backlight unit, it is connected with terminal 4 by lead 2, on luminescence chip 1, be coated with layer of fluorescent powder layer 6, this phosphor powder layer 6 is the yellow fluorescence bisque, and the chemical composition of the material of employing is: (Y 1-X-Y-Z-q, Gd X, DY y, Yb Z, Er q, Ce p) α(Al L-n-m-k, Ga n, Sc K, In 1) βO 12, wherein, the α span is 2.8~3.2, the β span is 4.98~5.02, and the X span is 0.05~0.65, and the Y span is 0.0001~0.05, the Z span is 0.0001~0.05, the q span is 0.0001~0.05, and the p span is 0.01~0.1, and the k span is 0.001~0.6, the n span is 0.001~0.45, the l span is 0.001~0.1, and the white light source that said apparatus constituted all is encapsulated in the transparent resin head 5, forms a luminous element.Because the gold-tinted that the blue-light excited yellow fluorescence bisque 6 that luminescence chip 1 sends sends can mix the white light that forms a kind of high brightness with blue light source, therefore, this kind diode white light source device can reach the needed brightness of illumination.
The utility model device compared with prior art has brightness height, good energy-conserving effect, long service life and safe and reliable advantage.

Claims (2)

1. high brightness diode white light source, it comprises chip (1), lead (2), supports reflector (3), terminal (4) and resin head assemblies such as (5), it is characterized in that: support reflector (3) and be provided with the led lighting chip (1) that optical source wavelength is 400~490 nanometers, and be connected with terminal (4) by lead (2), be coated with layer of fluorescent powder layer (6) on luminescence chip (1), the white light source that said apparatus constituted all is encapsulated in the transparent resin head (5).
2. high brightness diode white light source according to claim 1 is characterized in that: led lighting chip (1) is the blu-ray type light-emitting diode chip for backlight unit.
CNU2004200844793U 2004-07-30 2004-07-30 High-bright diode white light source Expired - Lifetime CN2726129Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2004200844793U CN2726129Y (en) 2004-07-30 2004-07-30 High-bright diode white light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2004200844793U CN2726129Y (en) 2004-07-30 2004-07-30 High-bright diode white light source

Publications (1)

Publication Number Publication Date
CN2726129Y true CN2726129Y (en) 2005-09-14

Family

ID=35040833

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2004200844793U Expired - Lifetime CN2726129Y (en) 2004-07-30 2004-07-30 High-bright diode white light source

Country Status (1)

Country Link
CN (1) CN2726129Y (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621106B (en) * 2009-07-30 2012-05-16 中国计量学院 LED with antireflection film and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621106B (en) * 2009-07-30 2012-05-16 中国计量学院 LED with antireflection film and preparation method thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20140730

Granted publication date: 20050914