CN2708566Y - Frequency multiplex apparatus and multi-layer frequency multiplex apparatus - Google Patents
Frequency multiplex apparatus and multi-layer frequency multiplex apparatus Download PDFInfo
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- CN2708566Y CN2708566Y CN 200420001242 CN200420001242U CN2708566Y CN 2708566 Y CN2708566 Y CN 2708566Y CN 200420001242 CN200420001242 CN 200420001242 CN 200420001242 U CN200420001242 U CN 200420001242U CN 2708566 Y CN2708566 Y CN 2708566Y
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Abstract
The utility model provides a frequency multiplex apparatus. The frequency multiplex apparatus achieves component miniaturization and has the advantage of the same electrical characteristic of a traditional frequency multiplex apparatus, comprising a low-pass filter used for isolating the signals of a high frequency zone and making the signals in a low frequency zone pass, a high-pass filter used for isolating the signals of the low frequency zone making the signals in the high frequency zone pass, a first and input end, a second output end, and an aerial end used for transmitting signals. The high frequency filter comprises a first capacitor coupled with the aerial end, a second capacitor coupled between the first capacitance and the second input end or the second output end, a forth capacitor coupled between the aerial end and the second input end or the second output end, a first electric inductor coupled between the joint point of the first capacitor and the second capacitor and a referrence ground end. The utility model also utilizes the common-fire technique of multi-layer ceramic low-temperature to make the frequency multiplex apparatus be manufactured into a multi-layer frequency multiplex apparatus, and frequency multiplex apparatus has the advantage of achieving component miniaturization and has the same electrical character of the traditional frequency multiplex apparatus.
Description
Technical field
The utility model relates to a kind of frequency multiplex device, particularly relates to utilizing the low temperature co-fired technology of multi-layer ceramics (Multi-layer Low Temperature Co-fired Ceramic, a kind of multilayer frequency multiplex device LTCC).
Background technology
Mechanics of communication is maked rapid progress, product more and more requires compact, and superperformance is arranged, because the low temperature co-fired technology of multi-layer ceramics (Multi-layer Low Temperature Co-firedCeramic, LTCC) in the application of high frequency, excellent electric characteristics is arranged, because mostly the high-frequency filter circuit of communication product front end transmitting-receiving all the time or switch module are to realize with this.On the field of this ceramic communication part, how effectively realize circuit integrated integrated and dwindle size of components, it is the individual problem deeply concerned of making us always, in order to realize the target of component miniaturization, there is both direction can go effort, one is improvement material system (diminishing such as dielectric constant raising, bed thickness), moreover is the improvement of circuit framework and topology layout.
Frequency multiplex device (Diplexer) is often being played the part of important role in the double frequency communication system, this frequency multiplex device is one three a port circuit network, be used for separately the signal of different frequency, usually with high-frequency signals from one tunnel output, and export low-frequency signal to another road; In addition, also the signal of different frequency can be lumped together.Fig. 1 represents the schematic diagram of a known frequency multiplex device, and as shown in Figure 1, it is made up of a low pass filter 1 and high pass filter 3, with antenna end A
1The signal that enters is assigned to different separately paths according to two different frequency bands; When the signal frequency was higher, the input impedance of low pass filter 1 must be close to open circuit, makes whole frequency multiplex device have only high pass filter 3 parts, and guaranteed not have the higher signal of any frequency in low pass filter 1 output; In like manner as can be known, when the signal frequency was low, the input impedance of high pass filter 3 must be close to open circuit, makes whole frequency multiplex device have only low pass filter 1 part, and guaranteed not have the lower signal of any frequency in high pass filter 3 outputs.
Fig. 2 represents the circuit diagram of a known frequency multiplex device, and as shown in Figure 2, a low pass filter 1 comprises one the 3rd inductance L
3, one the 6th capacitor C
6, and one the 8th capacitor C
8, wherein, the 3rd inductance L
3With the 6th capacitor C
6Constitute one group of LC resonant circuit, be responsible for the signal of high frequency band and isolate, and the signal of low-frequency band is passed through; Equally, a high pass filter 3 comprises one the 4th inductance L
4, one the 5th inductance L
5, one the 7th capacitor C
7, and one the 9th capacitor C
9, wherein, the 4th inductance L
4With the 7th capacitor C
7Constitute one group of LC resonant circuit, be responsible for the signal of low-frequency band and isolate, and the signal of high frequency band is passed through.
Fig. 3 represents the circuit diagram of the frequency multiplex device that another is known, and as shown in Figure 3, a low pass filter 1 comprises one the 6th inductance L
6, 1 the tenth capacitor C
10, and 1 the 12 capacitor C
12, wherein, the 6th inductance L
6With the tenth capacitor C
10Constitute one group of LC resonant circuit, be responsible for the signal of high frequency band and isolate, and the signal of low-frequency band is passed through; Equally, a high pass filter 3 comprises one the 7th inductance L
7, 1 the 11 capacitor C
11, 1 the 13 capacitor C
13, and 1 the 14 capacitor C
14, wherein, the 7th inductance L
7With the 11 capacitor C
11Constitute one group of LC resonant circuit, be responsible for the signal of low-frequency band and isolate, and the signal of high frequency band is passed through.
Fig. 4 represents the frequency response chart of known frequency multiplex device, and as shown in Figure 4, one first cut-off frequency fp1 is by the 3rd inductance L in the above-mentioned low pass filter
3With the 6th capacitor C
6(or the 6th inductance L
6With the tenth capacitor C
10) resonance institute causes, one second cut-off frequency fp2 is by the 4th inductance L in the above-mentioned high pass filter
4With the 7th capacitor C
7(or the 7th inductance L
7With the 11 capacitor C
11) resonance causes, because the relational expression that the frequency of LC resonant circuit constitutes is
Therefore it is lower to work as frequency, and required L, C value are just bigger, cause the restriction of structural wiring.
Because the above-mentioned given frequency multiplexer degree of difficulty in design and the restriction of structural wiring, facilitate the utility model that a kind of preferable solution is provided, utilize less components values, make low-frequency band produce attenuation pole, and reach the electrical characteristic identical with conventionally known circuit, (Multi-layer Low Temperature Co-fired Ceramic LTCC), makes it reach the target of component miniaturization also to utilize the low temperature co-fired technology of multi-layer ceramics.
The utility model content
In view of this, the utility model main purpose provides a kind of frequency multiplex device, particularly relevant for utilizing the low temperature co-fired technology of multi-layer ceramics (Multi-layer Low Temperature Co-firedCeramic, a kind of multilayer frequency multiplex device LTCC).
For achieving the above object, the utility model proposes a kind of frequency multiplex device, separate in order to signal different frequency, comprise: one first I/O (I/O) end is isolated in order to the signal of being responsible for low-frequency band in order to carry high frequency frequency band signal, an antenna end, a high pass filter in order to transmission low-frequency band signal, one second I/O (I/O) end, the signal of high frequency band is passed through, and one low pass filter isolate in order to the signal of being responsible for high frequency band, the signal of low-frequency band is passed through.
Wherein, high pass filter comprises: one first electric capacity couples that antenna end, one second electric capacity are coupled between first electric capacity and the second I/O end, one the 4th electric capacity is coupled between the antenna end and the second I/O end, one first inductance is coupled in the tie point and of first and second electric capacity with reference between the earth terminal.Low pass filter comprises: one second inductance is coupled between the antenna and the first I/O end, one the 3rd electric capacity is coupled between the antenna and the first I/O end and one the 5th electric capacity is coupled in the first I/O end and above-mentioned with reference between the earth terminal.
In addition, the utility model also utilizes the low temperature co-fired technology of multi-layer ceramics (Multi-layer LowTemperature Co-fired Ceramic, LTCC) the frequency multiplex device is created a kind of multilayer frequency multiplex device, utilize less components values, achieve component miniaturization and have the advantage of the identical electrical characteristic of legacy frequencies multiplexer, therefore with more simplifying that this circuit will become when the actual track layout, and make the utility model have more splendid economic benefit.
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent, some preferred embodiments cited below particularly, and be described with reference to the accompanying drawings as follows.
Description of drawings
Fig. 1 represents the schematic diagram of a known frequency multiplex device.
Fig. 2 represents the circuit diagram of a known frequency multiplex device.
Fig. 3 represents the circuit diagram of the frequency multiplex device that another is known.
Fig. 4 represents the frequency response chart of a known frequency multiplex device.
Fig. 5 represents the circuit diagram of the first embodiment frequency multiplex device of the present utility model.
Fig. 6 represents the structure chart of the second embodiment multilayer frequency multiplex device of the present utility model.
The circuit diagram of the high pass filter of Fig. 7 presentation graphs 2 known technologies.
The circuit diagram of the high pass filter of Fig. 8 presentation graphs 3 known technologies.
The circuit diagram of Fig. 9 presentation graphs 5 high pass filters of the present utility model.
The reference numeral explanation
The 1-low pass filter, 3-high pass filter, 10-first substrate, 20-second substrate, 30-the 3rd substrate, 40-tetrabasal, 50-the 5th substrate, 60-the 6th substrate, 70-the 7th substrate, the 110-first conductor path layer, the 112-second conductor path layer, 210-the 3rd conductor path layer, 212-the 4th conductor path layer, the 310-first conductor surface layer, the 312-second conductor surface layer, 410-the 3rd conductor surface layer, 412-the 4th conductor surface layer, 414-the 5th conductor surface layer, 510-the 6th conductor surface layer, 512-the 7th conductor surface layer, the 610-first reference conductor surface layer, the 710-second reference conductor surface layer, GND-be with reference to earth terminal, V
1-the first through hole, V
2-the second through hole, V
3-third through-hole, A
1-antenna end, I/O
(1)-the first I/O end, I/O
(2)-the second I/O end, C
1-the first electric capacity, C
2-the second electric capacity, C
3-Di three electric capacity, C
4-Di four electric capacity, C
5-Di five electric capacity, C
6-Di six electric capacity, C
7-Di seven electric capacity, C
8-Di eight electric capacity, C
9-Di nine electric capacity, C
10-Di ten electric capacity, C
11-Di 11 electric capacity, C
12-Di 12 electric capacity, C
13-Di 13 electric capacity, C
14-Di 14 electric capacity, L
1-the first inductance, L
2-the second inductance, L
3-Di three inductance, L
4-Di four inductance, L
5-Di five inductance, L
6-Di six inductance, L
7-Di seven inductance, fp1-first cut-off frequency, fp2-second cut-off frequency.
Embodiment
Embodiment one:
Fig. 5 represents the circuit diagram of the first embodiment frequency multiplex device of the present utility model, and as shown in Figure 5, the frequency multiplex device comprises: one first I/O end I/O
(1), one second I/O end I/O
(2), an antenna end A
1, a high pass filter 3 is coupled in above-mentioned antenna end A
1With the above-mentioned second I/O end I/O
(2)Between and a low pass filter 1 be coupled in above-mentioned antenna end A
1With the above-mentioned first I/O end I/O
(1)Between.
The operation principle of present embodiment frequency multiplex device is as described below.High pass filter 3 comprises: one first capacitor C
1, couple antenna end A
1, one second capacitor C
2, be coupled in first capacitor C
1With the second I/O end I/O
(2)Between, one the 4th capacitor C
4, be coupled in antenna end A
1With the second I/O end I/O
(2)Between, one first inductance L
1, be coupled in first capacitor C
1With second capacitor C
2Tie point and with reference between the earth terminal GND, utilize the principle of equal effects between Δ-Y circuit, reduce each components values, make low-frequency band produce attenuation pole, to obtain the electrical characteristic identical with traditional circuit.
Wherein, when signal via antenna end A
1After entering the frequency multiplex device, high pass filter 3 is isolated in order to the signal of being responsible for low-frequency band, and the signal of high frequency band is passed through, and guarantees not have the higher signal of any frequency in low pass filter 1 output; And low pass filter is isolated in order to the signal of being responsible for high frequency band, and the signal of low-frequency band is passed through, and guarantees not have the lower signal of any frequency in high pass filter 3 outputs.In like manner as can be known, when signal through high pass filter 3 and low pass filter 1 by antenna end A
1During output, high pass filter 3 can guarantee not have the lower signal of any frequency in high pass filter 3 outputs, and low pass filter 1 can guarantee not have the higher signal of any frequency in low pass filter 1 output.
Embodiment two:
Fig. 6 represents the structure chart of the second embodiment multilayer frequency multiplex device of the present utility model, as shown in Figure 5, multilayer frequency multiplex device comprises: one first I/O end, one second I/O end, at least one with reference to earth terminal, an antenna end in order to couple an exterior antenna, one first substrate, one second substrate, one the 3rd substrate, a tetrabasal and one the 5th substrate.
The operation principle of present embodiment multilayer frequency multiplex device is as described in first embodiment, and the structure of its multilayer frequency multiplex device is as follows.The starting point that first substrate 10 has one first conductor path layer 110 and the second conductor path layer, 112, the first conductor path layer 110 couples with reference to earth terminal GND, and the starting point of the second conductor path layer 112 couples antenna end A
1 Second substrate 20 is arranged under first substrate 10, has one the 3rd conductor path layer 210 and the 4th conductor path layer 212; Wherein, the starting point of the 3rd conductor path layer 210 is passed first substrate 10 and is coupled the terminal point of the first conductor path layer 110, makes the first conductor path layer 110 and the 3rd conductor path layer 210 form helicoidal structures and as one first inductance L
1, the starting point of the 4th conductor path layer 212 is passed first substrate 10 and is coupled the terminal point of the second conductor path layer 112, makes the second conductor path layer 112 and the 4th conductor path layer 212 form helicoidal structures and as one second inductance L
2, the terminal point of the 4th conductor path layer 212 couples the first I/O end I/O
(1), wherein; Second substrate 20 also has one second through hole V
2With a third through-hole V
3, the second through hole V
2The starting point that makes the 3rd conductor path layer 210 is to couple the terminal point of the first conductor path layer 110; And third through-hole V
3The starting point that makes the 4th conductor path layer 412 is to couple the terminal point of the second conductor path layer 112.
The 3rd substrate 30 is arranged under second substrate 20, has the one first conductor surface layer 310 and the second conductor surface layer 312, and is arranged on the 3rd substrate 30 to electrical isolation mutually, and the first conductor surface layer 310 has one first through hole V
1Pass second substrate 20 and couple the terminal point of above-mentioned the 3rd conductor path layer 210, the second conductor surface layer 312 couples antenna end A
1Tetrabasal 40 is arranged under the 3rd substrate 30, have one the 3rd conductor surface layer 410, the 4th conductor surface layer 412 and the 5th conductor surface layer 414, and be arranged on the tetrabasal 40 to electrical isolation mutually, the first conductor surface layer 310 and the 3rd conductor surface layer 410 constitute one first capacitor C
1, the first conductor surface layer 310 and the 4th conductor surface layer 412 constitute one second capacitor C
2, the second conductor surface layer 312 and the 5th conductor surface layer 414 constitute one the 3rd capacitor C
3Wherein, the 3rd conductor surface layer 410 couples antenna end A
1, the 4th conductor surface layer 412 couples the second I/O end I/O
(2), the 5th conductor surface layer 414 couples the first I/O end I/O
(1)
The 5th substrate 50 is arranged under the tetrabasal 40, have one the 6th conductor surface layer 510 and the 7th conductor surface layer 512, and be arranged on the 5th substrate 50 to electrical isolation mutually, the 6th conductor surface layer 510 is in order to constitute one the 4th capacitor C for 412 layers with the 3rd conductor surface layer 410 and the 4th conductor surface
4, the 7th conductor surface layer 512 couples with reference to earth terminal GND in order to constitute one the 5th capacitor C with the 5th conductor surface layer 414
5After the pattern definition of each substrate finished, (Multi-layer LowTemperature Co-fired Ceramic LTCC) made as shown in Figure 6 multilayer frequency multiplex device by the low temperature co-fired technology of multi-layer ceramics.
Wherein, first capacitor C
1, second capacitor C
2, the 4th capacitor C
4, and first inductance L
1Constituting a high pass filter 3 isolates in order to the signal of being responsible for low-frequency band, the signal of high frequency band is passed through, because of utilizing the principle of equal effects between Δ-Y circuit, can realize the electrical characteristic that former traditional circuit is had with less components values, when carrying out multi-layer ceramics when low temperature co-fired, the size that not only can dwindle the frequency multiplex device also can reduce cost and obtain maximum economic benefit; And second inductance L
2, the 3rd capacitor C
3, and the 5th capacitor C
5, constitute a low pass filter 1 and isolate in order to the signal of being responsible for high frequency band, the signal of low-frequency band is passed through.
Multilayer frequency multiplex device also comprises one the 6th substrate 60 and one the 7th substrate 70; The 6th substrate 60 is arranged under the 5th substrate 50; having one first reference conductor surface layer 610 couples with reference to earth terminal GND; and the 7th substrate 70 is arranged on first substrate 10; having one second reference conductor surface layer 710 couples with reference to earth terminal GND; the 6th substrate 60 and the 7th substrate 70 are as the shielding of multilayer frequency multiplex device; in order to isolating, and the function of protection multilayer frequency multiplex device is arranged by the external world or noise that peripheral assembly produced.
In sum, the utility model has following advantage:
The circuit diagram of the high pass filter of Fig. 7 presentation graphs 2 known technologies; The circuit diagram of the high pass filter of Fig. 8 presentation graphs 3 known technologies; The circuit diagram of Fig. 9 presentation graphs 5 high pass filters of the present utility model.Wherein, Fig. 7 the 4th inductance L
4, Fig. 8 the 7th inductance L
7, and Fig. 9 first inductance L
1Has corresponding relation; Under identical situation, the components values of each circuit shown in 7-9 figure, Fig. 7 the 4th inductance L
4Inductance value at least greater than Fig. 9 first inductance L
1Two times of inductance value, in addition; Though Fig. 8 the 7th inductance L
7Inductance value and Fig. 9 first inductance L
1Inductance value equate that but simultaneously, other capacitance of Fig. 8 is but greater than the capacitance of Fig. 9.
From the above, circuit shown in Figure 9, because of utilizing the principle of equal effects between Δ-Y circuit, can reach the electrical characteristic that former traditional circuit is had with less components values, and with more simplifying that circuit shown in Figure 9 will become when the actual track layout, ceramic when low temperature co-fired when carrying out, the size that not only can dwindle the frequency multiplex device also can reduce cost and obtain maximum economic benefit.
Though the utility model discloses as above with two preferred embodiments; right its is not in order to limit the utility model; those skilled in the art is under the prerequisite that does not break away from spirit and scope of the present utility model; can do some changes and retouching, therefore protection range of the present utility model is as the criterion with claim of the present utility model.
Claims (12)
1. frequency multiplex device is characterized in that comprising:
One first I/O end;
One second I/O end;
One antenna end;
One high pass filter is coupled between above-mentioned antenna end and the above-mentioned second I/O end and comprises:
One first electric capacity couples above-mentioned antenna end;
One second electric capacity is coupled between above-mentioned first electric capacity and the above-mentioned second I/O end;
One the 4th electric capacity is coupled between above-mentioned antenna end and the above-mentioned second I/O end;
One first inductance, the tie point and that is coupled in above-mentioned first and second electric capacity is with reference between the earth terminal;
One low pass filter is coupled between above-mentioned antenna end and the above-mentioned first I/O end and comprises:
One second inductance is coupled between above-mentioned antenna and the above-mentioned first I/O end;
One the 3rd electric capacity is coupled between above-mentioned antenna and the above-mentioned first I/O end; And
One the 5th electric capacity is coupled in the above-mentioned first I/O end and above-mentioned with reference between the earth terminal.
2. multilayer frequency multiplex device is characterized in that comprising:
One first I/O end;
One second I/O end;
At least one with reference to earth terminal;
One antenna end is in order to couple an exterior antenna;
One first substrate has first and second conductor path layer, and the starting point of the above-mentioned first conductor path layer couples above-mentioned with reference to earth terminal, and the starting point of the above-mentioned second conductor path layer couples above-mentioned antenna end;
One second substrate is arranged under above-mentioned first substrate, has the one the 3rd and the 4th conductor path layer; Wherein, the starting point of above-mentioned the 3rd conductor path layer is passed above-mentioned first substrate and is coupled the terminal point of the above-mentioned first conductor path layer, make the above-mentioned first and the 3rd conductor path layer form helicoidal structure and as one first inductance, the starting point of above-mentioned the 4th conductor path layer is passed above-mentioned first substrate and is coupled the terminal point of the above-mentioned second conductor path layer, make the above-mentioned second and the 4th conductor path layer form helicoidal structure and as one second inductance, the terminal point of above-mentioned the 4th conductor path layer couples the above-mentioned first I/O end;
One the 3rd substrate is arranged under above-mentioned second substrate, has one first and second conductor surface layer, the above-mentioned first conductor surface layer has that one first through hole passes above-mentioned second substrate and the terminal point that couples above-mentioned the 3rd conductor path layer, and the above-mentioned second conductor surface layer couples above-mentioned antenna end;
One tetrabasal is arranged under above-mentioned the 3rd substrate, has the one the 3rd, the 4th and the 5th conductor surface layer, the above-mentioned first and the 3rd conductor surface layer constitutes one first electric capacity, and the above-mentioned first and the 4th conductor surface layer constitutes one second electric capacity, and the above-mentioned second and the 5th conductor surface layer constitutes one the 3rd electric capacity; Wherein, above-mentioned the 3rd conductor surface layer couples above-mentioned antenna end, and above-mentioned the 4th conductor surface layer couples the above-mentioned second I/O end, and above-mentioned the 5th conductor surface layer couples the above-mentioned first I/O end;
One the 5th substrate is arranged under the above-mentioned tetrabasal, has the one the 6th and the 7th conductor surface layer, above-mentioned the 6th conductor surface layer is in order to constituting one the 4th electric capacity with the above-mentioned the 3rd and the 4th conductor surface layer, above-mentioned the 7th conductor surface layer couple above-mentioned with reference to earth terminal in order to constitute one the 5th electric capacity with above-mentioned the 5th conductor surface layer.
3. multilayer frequency multiplex device as claimed in claim 2 comprises that also one the 6th substrate is arranged under above-mentioned the 5th substrate, has one first reference conductor surface layer and couples above-mentioned with reference to earth terminal.
4. multilayer frequency multiplex device as claimed in claim 2 comprises that also one the 7th substrate is arranged on above-mentioned first substrate, has one second reference conductor surface layer and couples above-mentioned with reference to earth terminal.
5. multilayer frequency multiplex device as claimed in claim 2 also has the above-mentioned the 6th and the 7th substrate simultaneously.
6. multilayer frequency multiplex device as claimed in claim 2, wherein, above-mentioned second substrate has one second through hole, and the starting point that makes above-mentioned the 3rd conductor path layer is to couple the terminal point of the above-mentioned first conductor path layer.
7. multilayer frequency multiplex device as claimed in claim 2, wherein above-mentioned second substrate has a third through-hole, and the starting point that makes above-mentioned the 4th conductor path layer is to couple the terminal point of the above-mentioned second conductor path layer.
8. multilayer frequency multiplex device as claimed in claim 2 wherein, is arranged on above-mentioned the 3rd substrate to the mutual electrical isolation of the above-mentioned first and second conductor surface layers.
9. multilayer frequency multiplex device as claimed in claim 2 wherein, is arranged on the above-mentioned tetrabasal to the mutual electrical isolation of above-mentioned the 3rd, the 4th and the 5th conductor surface layer.
10. multilayer frequency multiplex device as claimed in claim 2 wherein, is arranged on above-mentioned the 5th substrate to the above-mentioned the 6th and the 7th mutual electrical isolation of conductor surface layer.
11. multilayer frequency multiplex device as claimed in claim 2, wherein, above-mentioned first electric capacity, second electric capacity, the 4th electric capacity and first inductance are in order to constitute a high pass filter.
12. multilayer frequency multiplex device as claimed in claim 2, wherein, above-mentioned second inductance, the 3rd electric capacity and the 5th electric capacity are in order to constitute a low pass filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420001242 CN2708566Y (en) | 2004-01-30 | 2004-01-30 | Frequency multiplex apparatus and multi-layer frequency multiplex apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420001242 CN2708566Y (en) | 2004-01-30 | 2004-01-30 | Frequency multiplex apparatus and multi-layer frequency multiplex apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2708566Y true CN2708566Y (en) | 2005-07-06 |
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|---|---|---|---|
| CN 200420001242 Expired - Fee Related CN2708566Y (en) | 2004-01-30 | 2004-01-30 | Frequency multiplex apparatus and multi-layer frequency multiplex apparatus |
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| CN (1) | CN2708566Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618124A (en) * | 2013-12-04 | 2014-03-05 | 深圳市麦捷微电子科技股份有限公司 | Novel laminating piece type duplexer |
| CN103715483A (en) * | 2014-01-16 | 2014-04-09 | 南京邮电大学 | Broad band band-pass filter |
| CN103872464A (en) * | 2012-12-07 | 2014-06-18 | 安德鲁有限责任公司 | Ultra-Wideband 180 Degree Hybrid For Dual-Band Cellular Basestation Antenna |
| CN108471299A (en) * | 2017-02-23 | 2018-08-31 | 株式会社村田制作所 | The impedance matching methods of multiplexer, sending device, reception device and multiplexer |
-
2004
- 2004-01-30 CN CN 200420001242 patent/CN2708566Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872464A (en) * | 2012-12-07 | 2014-06-18 | 安德鲁有限责任公司 | Ultra-Wideband 180 Degree Hybrid For Dual-Band Cellular Basestation Antenna |
| CN103872464B (en) * | 2012-12-07 | 2018-02-16 | 康普技术有限责任公司 | Ultra wide band 180 degree hybrid circuit for dual band cellular antenna for base station |
| CN103618124A (en) * | 2013-12-04 | 2014-03-05 | 深圳市麦捷微电子科技股份有限公司 | Novel laminating piece type duplexer |
| CN103618124B (en) * | 2013-12-04 | 2015-12-30 | 深圳市麦捷微电子科技股份有限公司 | A kind of lamination sheet type duplexer |
| CN103715483A (en) * | 2014-01-16 | 2014-04-09 | 南京邮电大学 | Broad band band-pass filter |
| CN103715483B (en) * | 2014-01-16 | 2017-01-25 | 南京邮电大学 | Broad band band-pass filter |
| CN108471299A (en) * | 2017-02-23 | 2018-08-31 | 株式会社村田制作所 | The impedance matching methods of multiplexer, sending device, reception device and multiplexer |
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