CN2698003Y

CN2698003Y - Organic lighting top-lighting device for active matrix of film transistor

Info

Publication number: CN2698003Y
Application number: CN 200420011552
Authority: CN
Inventors: 黄锡珉
Original assignee: Individual
Current assignee: Individual
Priority date: 2004-02-16
Filing date: 2004-02-16
Publication date: 2005-05-04
Anticipated expiration: 2014-02-16

Abstract

The utility model belongs to the technical field of the electroluminescence display, in particular to an organic lighting top-lighting device for active matrix of film transistor. The structure of the utility model is that a new structure of the TFTAM-OLED lighting top-lighting device is formed by the electrically connection between a TFT (thin film transistor)(or MOS: metal-oxidate-semiconductor), an array base panel,a homogeneous light or a three primary colors light or a white light OLED (organic lighting) screen on the silicon or quartz or glass base panel. The metal electrode of the OLED screen and the drain electrode for driving the TFT are designed in new type shapes, and the desiccant coating, the drain electrode for driving the TFT and the metal electrode of the OLED screen are connected by aeolotropism conductive adhesive. Adopting the new type structure and the production technique of the TFTAM-OLED lighting top-lighting device, the utility model has the advantages of high opening rate, high lighteness, high resolution and that the rate of finished products is improved, the cost is reduced, etc.

Description

Luminescent device is gone up on thin film transistor active matrix organic light emission top

Technical field

The utility model belongs to electroluminescence Display Technique field, relate at silicon TFT or MOS array base palte and the new structure that connects to luminescent device on the active matrix organic light-emitting top that between monochromatic light or three primary colors light or white light OLED screen, conducts electricity quartzy or on glass, specifically a kind of thin film transistor active matrix organic luminescent device (being called for short TFTAM-OLED).

Technical background

Advantages such as that OLED has is ultra-thin, low-voltage, low-power consumption, response fast, high-contrast, high brightness, colorful light-emitting, wide visual angle are considered to flat panel display of future generation the most promising behind LCD.OLED is divided into simple matrix (PM) demonstration and active matrix (AM) shows that Active Matrix LCD At is also referred to as TFTAM-OLED.The former can only be used for simple displaying such as mobile phone, automobile audio, instrument and meter, and the latter is used for high-resolution such as PC, TV, high-quality, the high-grade demonstration.Therefore TFTAM-OLED is the main flow that OLED shows, also is one of following dominant technology that shows.

Usually as thin film transistor active matrix liquid crystal display tft array glass substrate side when luminous, TFTAM-OLED runs into some problems.Because OLED needs current drives, must have two above TFT elements and holding capacitor in the TFTAM-OLED image element circuit.The TFT material has polysilicon (p-Si), amorphous silicon (a-Si) and monocrystalline silicon (c-Si).Under the p-SiTFT situation, p-Si grain size skewness and cause the OLED brightness irregularities.Therefore the compensating circuit technology of 4 TFT of a general pixel of employing overcomes irregularity in brightness, and aperture opening ratio is very low like this.Especially high density, high-resolution can only adopt the top to go up illumination scheme when showing.More outstanding when a-Si TFT is switch and driving element, because the a-Si mobility is low, the drive TFT size must be done to add threshold voltage shift greatly, and necessary aperture opening ratio is lower as a result with 4 TFT, can only adopt the top to go up the luminescent device structure.Monocrystalline silicon is during as substrate, because silicon single crystal flake itself is opaque, can only adopt luminescent device structure on the top equally.Therefore the main devices structure that the luminescent device structure is extensive use during TFT-OLED uses is gone up on the top.The luminescent device manufacturing can be adopted evaporation electron transfer layer, organic luminous layer, hole transmission layer and resilient coating on the tft array substrate on the TFT-OLED top, and last evaporation ITO electrode process is realized.Evenness and the free of pinholes that this technological requirement hole transmission layer or buffer-layer surface are very high and need low temperature ITO manufacturing technology.Problems such as the existing technology of employing exists technical difficulty big, and rate of finished products is low do not form production technology as yet.Therefore the new manufacturing technology that needs luminescent device on the TFTAM-OLED top.

Summary of the invention

The utility model organically combines the structure of tft array substrate and luminescent screen, and purpose provides a kind of thin film transistor active matrix organic light emission top and goes up luminescent device.

The utility model is made tft array substrate respectively with mature tft array production technology and organic light emission screen manufacturing technology and is shielded as upper substrate as infrabasal plate and organic light emission.Infrabasal plate tft array pixel drive TFT drain electrode is corresponding one by one with upper substrate organic light emission pixel metal negative electrode, conduction connects to luminescent device on the TFTAM-OLED top, and purpose provides a kind ofly to be had high finished product rate, low cost, be easy to industrial TFTAM-OLED new device structure and technology.By the utility model device architecture and technology, the TFTAM-OLED product is introduced to the market.

The utility model be the TFT on silicon or quartz or the glass substrate or MOS array base palte and between monochromatic light or three primary colors light or white light OLED screen conduction connect to luminescent device new structure on the TFTAM-OLED top.

The utility model is made up of TFT or MOS array base palte, OLED screen and desiccant material layer, and wherein TFT or MOS array device are identical with existing array device structure, and OLED screen basic structure is identical with existing organic electroluminescent screen structure.The OLED screen includes glass substrate, ITO positive electrode, wire netting, divider wall, hole transmission layer, organic luminous layer, electron transfer layer, metal negative electrode.TFT or MOS array base palte include the drain electrode of TFT or MOS, light shield layer, drain region, grid, insulating barrier, source area, holding capacitor, substrate.

OLED screen of the present utility model can be monochromatic, or three primary colors light, also can be white light.The substrate of TFT or MOS array base palte can be a silicon, or quartzy, also can be glass.

The utility model has a desiccant material layer between TFT or MOS array base palte and organic light emission screen, and realizes between TFT or MOS array base palte and the OLED screen conducting electricity with anisotropy conductiving glue by drain electrode and metal negative electrode and be connected.

Organic light emission metal negative electrode of the present utility model is shaped as rectangle or foursquare plane electrode, and the drive TFT drain electrode is shaped as circle or ellipse or rectangle or foursquare plane electrode.Wire netting and resin divider wall on existing organic electroluminescent screen basic structure, have been increased.Be the resistance of reduction ITO common electrode, plating net on ITO, mesh is shaped as square or rectangular, and net thickness is the 0.1-0.3 micron, and the netting twine width is the 1-3 micron, and the wire netting material is Au or Ag or Al or Cr.For obtaining pixel metal negative electrode, on mesh wire, make the resin divider wall, wall bottom width degree 1-3 micron, wall top width 2-10 micron, height is the 0.5-2 micron.Organic light emission metal negative electrode size is exactly the OLED pixel size.For increasing aperture opening ratio, the gap is the 2-10 micron between the metallic cathode electrode, drive TFT drain electrode thickness 2-10 micron, and its electrode area is the 1/2-1/4 of organic light emission metal negative electrode area.Organic light emission metal negative electrode material is Mg:Ag, and drive TFT drain electrode material is Cr or AL or MoW.Tft array plate and OLED screen aligning accuracy are the 1.5-10 micron.For improving the organic light-emitting device humidity resistance, the infrabasal plate drain electrode is coated with desiccant material on the gap, put into anisotropic conductive film between the upper and lower then substrate, the conducting particles diameter is the 1-9 micron in conducting film, infrabasal plate is placed on the 100-220 degree heating platform, and pressurization 100-250 newton, be 10-30 second pressing time, conduction links to be finished.Under inert gas shielding, be coated with ultraviolet cured adhesive at last, be packaged into product with ultraviolet light polymerization.

The utility model TFTAM-OLED device is because be that the top is upward luminous, and aperture opening ratio is more than 90%.In addition, with mature tft array production technology and the reasonably combination of organic light emission screen manufacturing technology, be suitable for producing in enormous quantities.Therefore, the utlity model has characteristics such as characteristics such as high aperture, high brightness, high-resolution and high finished product rate.

Description of drawings

Fig. 1 is the schematic diagram of the utility model structure, also is the specification digest accompanying drawing.1-transparent plastic film or polarizing coating among the figure, 2-glass substrate, 3-ITO positive electrode, 4-wire netting, the 5-hole transmission layer, 6-organic luminous layer, 7-divider wall, 8-electron transfer layer, 9 metal negative electrodes, 10-packaging plastic, 11-conducting particles, 12-desiccant material layer, 13-light shield layer, 14-insulating barrier, the 15-source area, 16-grid, 17-drain region, the 18-holding capacitor, 19-silicon single crystal or quartz or glass substrate, 20-drive TFT drain electrode.

Embodiment

With embodiment embodiment of the present utility model is described below.

Luminescent device on 0.7 inch green emitting TFT-OLED of embodiment top (is also referred to as OLEDoS: the silicon-based organic light-emitting diode)

Length-width ratio is 4: 3 on silicon monocrystalline substrate 19, make the tft array substrate of pixel 160 * 120 as infrabasal plate in catercorner length 17.78mm (0.7 inch) zone, every image element circuit is made up of two TFT and a holding capacitor 18, being designed to the TFT threshold voltage is the 1-1.5 volt, switching TFT raceway groove W/L is 8/5, drive TFT raceway groove W/L is 10/5, and storage capacitance 18 is 1pF.The diameter of the drive TFT drain electrode 20 of drain region 17 is 40 microns, and substrate surface exceeds 2 microns.0.7mm be coated with positive-working photoresist on the thick ito glass substrate 2, photoetching obtains 160 * 120 foursquare array metal electrode resin divider walls 7, wall is high 0.7 micron, and is wide 6 microns, and area is 86 * 86 square microns.Evaporation ZnPBT/Alq3/ α-NPD/Mg:Ag obtains the organic light emission screen as upper substrate as Mg:Ag negative electrode 9, Mg:Al alloy electrode 9 areas are 86 * 86 square microns.On infrabasal plate, be coated with packaging plastic 10 and be placed on the temperature 150 degree platforms with a rubbing method, put anisotropic conductive film on infrabasal plate, put upper substrate well by upper and lower base plate mark, 180 newton pressurize, 25 seconds, the conduction binding finished, and finished with ultraviolet lighting encapsulation in 5 minutes again.

Claims

1, a kind of thin film transistor active matrix organic light emission top is gone up luminescent device and is comprised: by drain region (17), light shield layer (13), grid (16), source area (15), holding capacitor (18), substrate (19), insulating barrier (14), TFT or MOS array base palte that drive TFT drain electrode (20) constitutes, by transparent plastic film or polarizing coating (1), glass substrate (2), ITO positive electrode (3), hole transmission layer (5), organic luminous layer (6), electron transfer layer (8), the OLED screen that metal negative electrode (9) constitutes, it is characterized in that TFT or MOS array base palte are as infrabasal plate, the OLED screen is as upper substrate, between drive TFT drain electrode (20) gap of infrabasal plate, a desiccant material layer (12) is arranged, by drain electrode (20) and metal negative electrode (9) conducting particles (11) with anisotropy conductiving glue between TFT or MOS array base palte and the OLED screen is connected, uses packaging plastic (10) to encapsulate at last; Be coated with wire netting (4) on the positive motor of ITO (3) of described OLED screen, on wire netting (4) line, be shaped on resin divider wall (7).

2, thin film transistor active matrix organic light emission according to claim 1 pushes up and goes up luminescent device, what it is characterized in that metal negative electrode (9) is shaped as rectangle or foursquare plane electrode, drives drain electrode (20) and is shaped as circle or ellipse or rectangle or foursquare plane electrode.

Luminescent device is gone up on 3 thin film transistor active matrix organic light emission according to claim 2 tops, it is characterized in that the size of metal negative electrode (9) is identical with the OLED pixel size.

4, thin film transistor active matrix organic light emission according to claim 3 pushes up and goes up luminescent device, it is characterized in that the gap is the 2-10 micron between the metal negative electrode (9), drain electrode (20) thickness 2-10 micron, the area of drain electrode (20) is the 1/2-1/4 of organic light emission metal negative electrode (9) area.

5, thin film transistor active matrix organic light emission according to claim 4 pushes up and goes up luminescent device, it is characterized in that wire netting (4) in the positive motor of ITO (3) plating, mesh is shaped as square or rectangular, net thickness is the 0.1-0.3 micron, the netting twine width is the 1-3 micron, the resin divider wall (7) on wire netting (4) line, wall bottom width degree 1-3 micron, wall top width 2-10 micron, height is the 0.5-2 micron.