CN2694475Y - Transparent electrode structure by employing multiple conductive layers as type P gallium nitride Ohm contact - Google Patents
Transparent electrode structure by employing multiple conductive layers as type P gallium nitride Ohm contact Download PDFInfo
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- CN2694475Y CN2694475Y CN 03257248 CN03257248U CN2694475Y CN 2694475 Y CN2694475 Y CN 2694475Y CN 03257248 CN03257248 CN 03257248 CN 03257248 U CN03257248 U CN 03257248U CN 2694475 Y CN2694475 Y CN 2694475Y
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- conductive layer
- gallium nitride
- transparent electrode
- ohmic contact
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Abstract
The utility model relates to a transparent electrode structure by employing multiple conductive layers as type P gallium nitride Ohm contact, especially to a transparent electrode with type P gallium nitride Ohm contact providing high grade of transparency and promoting the homogeneous dispersion of currents. Mainly by the method of physical vapor deposition (PVD), a fist conductive layer with semitransparent metal membrane and a second conductive layer with at least one layer of metallic oxide nesa are formed on the built crystal layer of type P gallium nitride (GaN). Meanwhile, by the method of heat treatment, the interface characteristic between the gallium nitride and the conductive layer as well as the optical penetrating rate of the conductive layer is improved to provide excellent ohm contact and to promote the homogeneous dispersion of currents on the electrode surface. Therefore, the structure is applicable to the light-emitting elements of short wavelength such as the blue light emitting diode (LED) and laser diode (LD) to effectively improve the operating efficiency and the life time of the light-emitting elements.
Description
Technical field
The utility model is subordinate to the technical field of a kind of gallium nitride (GaN) ohmic contact, especially the transparency electrode that refers to many conductive coating structures of use transparent conductive metal oxide film and semitransparent metal film, by this structure manufacture process special with it, make conductive layer have the high grade of transparency and can promote electric current evenly to inject P type gallium nitride (GaN) layer, to increase the luminous efficiency of gallium nitride (GaN) blue light element.
Background technology
The material system of gallium nitride (GaN) series can mix ternary or the quaternary (In that aluminium or indium modulate different energy gap width
xGa
yAl
zN, 0≤x, y, z≤1, and x+y+z=1) compound, thereby gallium nitride (GaN) material has been used on short wavelength's light-emittingdiode (LED), Laser Diodes (LD), photodetector and the microelectronic element widely, and owing to contact resistivity can be reduced to 10 at n type gallium nitride (GaN) at present
-4～10
-8The industrialization that Ω, light-emittingdiode wherein are successful especially.
But at present in the processing procedure of light-emitting component, because gallium nitride (GaN) is a wide energy gap semiconductor material (energy gap is 3.4eV), so can't effectively break through aspect the doping impurity of P type always, reaching highly doped characteristic, and make and be not easy very much manufacturing P type gallium nitride (GaN) ohmic contact.In addition, occurring in nature can not find the work function (work function) of a metal greater than the work function of P type gallium nitride (GaN) (～6.12eV), so the ohmic contact that also causes making P type gallium nitride (GaN) is not easy very much.Causing the ohmic contact with the P type gallium nitride (GaN) of present technology made all is directly to use metal, as United States Patent (USP) the 5th, 652, uses Ni or Ni/Au as ohmic contact in No. 434; And for example United States Patent (USP) the 5th, 739, uses Ti/Au, Ti/Ni or Ni/Au as ohmic contact in No. 554, (is about 10 yet the resistance value of its ohmic contact is still higher
-2～10
-3Ω), so high interface impedance will cause the performance of light-emitting component and reliability to be had a strong impact on.
In order to solve the above problems, Chinese patent is announced (semi-conductive ohmic contact and preparation method thereof) patent of invention of No. 386286 and has been proposed its solution, this patent case is to be coated with transition metal and noble metal on semi-conducting material, in oxidation environment, heat-treat then, make transiting metal oxidation, and making wherein at least a metallic element oxidation form P type oxide semiconductor, all the other metals then keep metallic state; According to the experimental data that this patent case is provided, its self-supporting can make the rete oxidation obtaining low-impedance ohmic contact, and its contact resistivity can meet the requirement of general photoelectric cell;
On the other hand, utilize nesa coating to promote CURRENT DISTRIBUTION, be proved and helped longer wavelength (as ruddiness, green glow, or long wavelength more) lifting of the external quantum efficiency of element, yet in the patent case of aforementioned home and abroad, its exploitation about this respect lacks, and causes the light transmission of light-emitting component not good, make the inhomogeneous of its CURRENT DISTRIBUTION, and then have influence on the luminous power and the reliability of light-emitting component.
Summary of the invention
The purpose of this utility model provides a kind of transparent electrode structure that uses many conductive layers as P type gallium nitride ohmic contact, it can provide good Ohmic contact, and can promote the uniformity of electric current and the luminous efficiency of integral body, thereby effectively improve the operating efficiency and the working life of light-emitting component.
The purpose of this utility model is achieved in that a kind of transparent electrode structure that uses many conductive layers as P type gallium nitride ohmic contact, includes: a P type gallium nitride epitaxial layer; One first conductive layer, this first conductive layer is made of the semi-transparent metals film, and its system is located on the epitaxial layer, and the light transmittance of first conductive layer is greater than 70%, and direct and epitaxial layer formation ohmic contact; At least one second conductive layer, this second conductive layer is made of the transparent conductive metal oxide film, it is to make to be located on first conductive layer stackedly, and second conductive layer is original or heat treatment after have light transmission.First conductive layer is the material that is selected from platinum, palladium, nickel, cobalt, copper, magnesium, zinc, indium.Second conductive layer can be oxidation resistant thin metal layer.Second conductive layer also can be the thin layer of metal.Second conductive layer can be to be selected from ruthenium, iridium, nickel, Cu oxide.Second conductive layer can be the oxide of superconductor.Second conductive layer can be meant indium-doped tin oxide.Second conductive layer can be a doped sno_2 antimony.Second conductive layer can be the doped sno_2 fluorine.Second conductive layer can be three oxidations, two zinc doping aluminium.Second conductive layer can be Zinc oxide doped aluminium.Second conductive layer can be Zinc oxide doped gallium.Second conductive layer can be the material that is selected from ruthenium-oxide, yttrium oxide, nickel oxide, cupric oxide.
The utility model has following actively useful effect: by above-mentioned structure, the utility model can reach to be provided good Ohmic contact and promotes electric current to evenly spread to the effect of electrode surface, not only can solve the puzzlement of the bad and current unevenness of existing gallium nitride light-emitting element ohmic contact, also can promote whole lighting efficiency, thereby effectively improve the operating efficiency and the life-span of light-emitting component.
The whole clearing degree of the multi-layer transparent conductive electrode (film) that the utility model is designed reaches more than 60% in near-ultraviolet range, has good light transmittance, be applied to short wavelength's light-emitting component, as blue light emitting diode (LED) or Laser Diodes (LD), or be applied on short wavelength's the OPTICAL SENSORS, can form good Ohmic contact with P type gallium nitride on the one hand, on the other hand, can promote CURRENT DISTRIBUTION again and improve luminous power and reliability, have high industrial utilization.
Second conductive layer of the present utility model is the transparent conductive metal oxide film, can obviously improve the light transmittance of light-emitting component by this, and the operating efficiency of light-emitting component is improved.The utility model also has good Ohmic contact, can improve the unsettled situation of high temperature, is improved working life in the use.Meet the industrial circle value.
Description of drawings
Fig. 1 is the structural representation that the utility model prepares the gallium nitride epitaxial layer;
Fig. 2 is the utility model deposits first conductive layer on gallium nitride a structural representation;
Fig. 3 is the utility model forms second conductive layer on first conductive layer a structural representation;
Fig. 4 is the structural representation that forms plural second conductive layer on the utility model first conductive layer.
Accompanying drawing number:
11. epitaxial layer 12. first conductive layers
13. second conductive layer, 14. second conductive layers
Embodiment
LED. light-emittingdiode (light-emitting diode) LD. Laser Diodes (laser diode)
Next lift a preferred embodiment; cooperate graphic simultaneously and figure number is described further; so that the utility model is had more detailed understanding; only the following stated person is only for being used for explaining preferred embodiment of the present utility model; be not that attempt is done any pro forma restriction to the utility model according to this; so every based on the utility model creation spirit, and be modification or the change what form the utility model makes, the category of the utility model intention protection all must be belonged to.
The utility model is a kind of transparent electrode structure that electric current is evenly distributed and increase P type gallium nitride (GaN) ohmic contact of luminous efficiency, it is as shown in Fig. 1, form half transparent metal film in the P of light-emitting component type gallium nitride (GaN) epitaxial layer 11 tops, and on semitransparent metal film, form the transparent conductive metal oxide film of one deck at least in addition;
As for the detailed manufacture process and the formation of preferred embodiment of the present utility model, then be as shown in Figure 1, 2, 3, the utility model uses many conductive layers to comprise as the transparency electrode fabrication steps of P type gallium nitride (GaN) ohmic contact:
A. the light-emitting component for preparing a gallium nitride series, its superiors are the epitaxial layer 11 of P type gallium nitride (GaN).
B. above the epitaxial layer 11 of P type gallium nitride in the physical vapor deposition (PVD) mode, deposit first conductive layer 12 that is constituted by the semi-transparent metals film.
C. above first conductive layer 12, deposit second conductive layer 13 that one deck at least is made of the transparent conductive metal oxide film again in the physical vapour deposition (PVD) mode.
D. at last first conductive layer 12 on the epitaxial layer 11 of the above-mentioned P of being deposited on type gallium nitride and second conductive layer 13 are heat-treated, use the penetrance of improving interface characteristic and light.
Above-mentioned can be modes such as electronics evaporation, hot evaporation or sputter to depositing the used physical vapor deposition (PVD) method of first conductive layer 12 and second conductive layer 13.
Be directly contact as the metallic film of first conductive layer 12 again with the prepared epitaxial layer 11 of P type gallium nitride, thus after Overheating Treatment, need to possess easy formation ohmic contact at least, or be easy to interface and form than one of two conditions such as compound of hanging down energy gap.
Therefore the work function of first conductive layer 12 must greater than or near the work function of P type gallium nitride, so after Overheating Treatment, can be easy to form ohmic contact.And, can select for use platinum (Pt), nickel (Ni), copper (Cu) etc. for constituting the material of first conductive layer 12 for reaching this purpose.
And be that first conductive layer 12 that metallic film is constituted is being easy to the compound that interface forms low energy gap after Overheating Treatment, for example can select indium (In), zinc (Zn), magnesium metals such as (Mg) for use is material.
In addition, the transparent conductive metal oxide film of second conductive layer 13 need possess high light transmittance after Overheating Treatment, so second conductive layer 13 need be the transparent metal oxide that still keeps conductivity after the oxidation, or direct transparent metal oxide, or oxidation resistant metallic film.
Still keep the transparent metal oxide of conductivity to be meant after the above-mentioned oxidation: the oxide of ruthenium (Ru), iridium (Ir), nickel (Ni), copper (Cu) or superconductor; And directly transparent metal oxide is meant: indium-doped tin oxide [InO (Sn)], doped sno_2 antimony [SnO (Sb)], doped sno_2 fluorine [SnO (F)], three oxidations, two zinc doping aluminium [ZnO (Al)], Zinc oxide doped aluminium [ZnO (Al)], Zinc oxide doped gallium [ZnO (Ga)], ruthenium-oxide [RuO], yttrium oxide [IrO], nickel oxide [NiO], cupric oxide [CuO] or superconducting oxide; Oxidation resistant in addition metallic film is meant gold (Au).
Please refer to shown in Figure 4ly, the utility model prepares the structure of multilayer conductive on P type gallium nitride epitaxial layer 11.It makes first conductive layer 12 of metallic film in the physical vapour deposition (PVD) mode on P type gallium nitride epitaxial layer 11, and be second conductive layer 13,14 that deposits unlike material and transparent number of metal oxidic transparent conducting film in regular turn on first conductive layer 12.
After heat treatment, the metallic film of first conductive layer 12 and epitaxial layer 11 must possess and be easy to form ohmic contact, or are easy to the compound that interface forms low energy gap, make electronics pass energy barrier easily, and selected metal material as previously mentioned.Transparent conductive metal oxide film as for each second conductive layer 13,14 then must have high transparent and can impel electric current to be dispersed in electrode surface, and selected material also as previously mentioned.
Further inquire into the transparent electrode structure of the made many conductive layers of the utility model as P type gallium nitride ohmic contact, please refer to shown in Figure 3, it comprises one by the prepared epitaxial layer 11 of P type gallium nitride, system is provided with first conductive layer 12 of layer of metal film on epitaxial layer 11, and system is provided with second conductive layer 13 that is made of the transparent conductive metal oxide film on first conductive layer 12.
Wherein the metallic film of this ground floor electricity layer 12 is good infrared-reflecting layers, simultaneously can reflect visible light, and the concentration range of its free carrier makes the electricity slurry frequency of metal drop on ultraviolet region, and is opaque at visible region.And to increase the transparency of visible light, metal must be made film;
Moreover because the metallic film of first conductive layer 12 is directly to contact with epitaxial layer 11, so need easy and epitaxial layer 11 formation ohmic contact, and in order to reach certain light transmittance (＞70%), the thickness of first conductive layer 12 must be less than 20nm.Therefore first conductive layer, 12 material therefors can be platinum (Pt), palladium (Pd), nickel (Ni), cobalt (Co), indium (In), magnesium (Mg), copper (Cu).
And since the transparent conductive metal oxide film of this second conductive layer 13 in order to obtain the high penetration of visible light, its energy band must be greater than more than the 3eV.Yet pure metal oxides generally at room temperature insulate, and therefore in order to increase conductivity, must mix some impurity in the metal oxide or be fabricated to the incomplete metal oxide of the state of oxidation.
The mode one of impurity, be in metal oxide, to mix cation than former compound to many metal ion of monovalence, as mixing the tin indium oxide (ITO) that tin (Sn) is constituted in the indium oxide (InO), or mix the antimony tin (ATO) that antimony (Sb) is constituted in the tin oxide (SnO), or zinc oxide (ZnO) mixes the indium zinc oxide (IZO) that indium (In) is constituted, or zinc oxide (ZnO) mixes the zinc oxide aluminum (AZO) that aluminium (Al) is constituted.
Two of the mode of impurity is to mix the nonmetallic ion that lacks monovalence than former compound anion in metal oxide, as mixing the tin oxide fluorine (FTO) that fluorine (F) is constituted in the tin oxide (SnO).
Another kind of mode is for making the incomplete metal oxide of the state of oxidation, so that oxide contains the anion vacancy.
Can both improve electron concentration with upper type, therefore general nesa coating is the n type normally, but will obtain good nesa coating, still must control the state of oxidation of nesa coating and the incorporation of foreign ion well.
The thin metal layer of second conductive layer 13 or transparent conductive metal oxide film are after heat treatment, need possess high-transmittance and can promote that electric current evenly spreads to electrode surface, if and second conductive layer, 13 thin metal layers still keep the transparent metal oxide of conductivity after must be for oxidation after the heat treatment, for example: ruthenium, iridium, nickel, copper, superconductor etc.; Or direct transparent metal oxide, as tin indium oxide (ITO), indium zinc oxide (IZO), antimony tin (ATO), zinc oxide aluminum (AZO); Or oxidation resistant metallic film, as gold (Au).
The structure of described epitaxial layer 11 is: the superiors 111 are P type gallium nitride, and the lower floor 112 of P type gallium nitride is an active layer, and the lower floor 113 of active layer is a n type gallium nitride, and the lower floor 114 of n type gallium nitride is a substrate, and number in the figure 115 is a n type gallium nitride contact electrode.
Based on above-mentioned inference, the utility model passes through technical conceive so cleverly, the whole clearing degree of the designed multi-layer transparent conductive electrode (film) of the utility model is reached more than 60% in near-ultraviolet range, has good light transmittance, be applied to short wavelength's light-emitting component, as blue light emitting diode (LED) or Laser Diodes (LD), or be applied on short wavelength's the OPTICAL SENSORS, can form good Ohmic contact with P type gallium nitride on the one hand, on the other hand, can promote CURRENT DISTRIBUTION again and improve luminous power and reliability, have high industrial utilization.
Second conductive layer of the present utility model is the transparent conductive metal oxide film, can obviously improve the light transmittance of light-emitting component by this, and the operating efficiency of light-emitting component is promoted.The utility model also has good Ohmic contact, can improve the unsettled situation of high temperature, is improved working life in the use.Meet and produce boundary's industry value.
Claims (13)
1. transparent electrode structure that uses many conductive layers as P type gallium nitride ohmic contact is characterized in that: include:
One P type gallium nitride epitaxial layer;
One first conductive layer, this first conductive layer is made of the semi-transparent metals film, and it is that system is located on the epitaxial layer, and the light transmittance of first conductive layer is greater than 70%, and direct and epitaxial layer formation ohmic contact;
At least one second conductive layer, this second conductive layer is made of the transparent conductive metal oxide film, and it is to make to be located on first conductive layer stackedly, and has light transmission.
2. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: first conductive layer is the material that is selected from platinum, palladium, nickel, cobalt, copper, magnesium, zinc, indium.
3. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is oxidation resistant thin metal layer.
4. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is the thin layer of metal.
5. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is the oxide that is selected from ruthenium, iridium, nickel, copper.
6. the many conductive layers of use as claimed in claim 1 are as the transparent electrode structure of P type gallium nitride ohmic contact, and it is characterized in that: second conductive layer is meant the oxide of superconductor.
7. the many conductive layers of use as claimed in claim 1 are as the transparent electrode structure of P type gallium nitride ohmic contact, and it is characterized in that: second conductive layer is meant indium-doped tin oxide.
8. the many conductive layers of use as claimed in claim 1 are as the transparent electrode structure of P type gallium nitride ohmic contact, and it is characterized in that: second conductive layer is meant doped sno_2 antimony.
9. the many conductive layers of use as claimed in claim 1 are as the transparent electrode structure of P type gallium nitride ohmic contact, and it is characterized in that: second conductive layer is meant the doped sno_2 fluorine.
10. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is meant three oxidations, two zinc doping aluminium.
11. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is meant Zinc oxide doped aluminium.
12. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is meant Zinc oxide doped gallium.
13. the many conductive layers of use as claimed in claim 1 is characterized in that as the transparent electrode structure of P type gallium nitride ohmic contact: second conductive layer is the material that is selected from ruthenium-oxide, yttrium oxide, nickel oxide, cupric oxide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03257248 CN2694475Y (en) | 2003-05-16 | 2003-05-16 | Transparent electrode structure by employing multiple conductive layers as type P gallium nitride Ohm contact |
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| CN 03257248 CN2694475Y (en) | 2003-05-16 | 2003-05-16 | Transparent electrode structure by employing multiple conductive layers as type P gallium nitride Ohm contact |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383480B (en) * | 2007-09-07 | 2010-06-09 | 北京大学 | Method for preparing P type electrode of gallium nitride based semiconductor laser device |
| CN102067348A (en) * | 2009-04-06 | 2011-05-18 | 松下电器产业株式会社 | Nitride semiconductor element and method for production thereof |
| CN109308952A (en) * | 2018-11-29 | 2019-02-05 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible transparent conductive film of high low-resistance |
| CN109448922A (en) * | 2018-11-29 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of flexible electronic information glass |
| CN111370992A (en) * | 2020-04-15 | 2020-07-03 | 深圳市利拓光电有限公司 | Power semiconductor laser with constant temperature control function and manufacturing method thereof |
| CN117936675A (en) * | 2024-01-25 | 2024-04-26 | 西交利物浦大学 | P-type GaN ohmic contact structure and preparation method and application thereof |
-
2003
- 2003-05-16 CN CN 03257248 patent/CN2694475Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383480B (en) * | 2007-09-07 | 2010-06-09 | 北京大学 | Method for preparing P type electrode of gallium nitride based semiconductor laser device |
| CN102067348A (en) * | 2009-04-06 | 2011-05-18 | 松下电器产业株式会社 | Nitride semiconductor element and method for production thereof |
| CN102067348B (en) * | 2009-04-06 | 2013-03-27 | 松下电器产业株式会社 | Nitride semiconductor element and method for production thereof |
| CN109308952A (en) * | 2018-11-29 | 2019-02-05 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible transparent conductive film of high low-resistance |
| CN109448922A (en) * | 2018-11-29 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of flexible electronic information glass |
| CN111370992A (en) * | 2020-04-15 | 2020-07-03 | 深圳市利拓光电有限公司 | Power semiconductor laser with constant temperature control function and manufacturing method thereof |
| CN117936675A (en) * | 2024-01-25 | 2024-04-26 | 西交利物浦大学 | P-type GaN ohmic contact structure and preparation method and application thereof |
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| GR01 | Patent grant | ||
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