CN2661710Y - Concentric interconnected apparatus for single crystal growing - Google Patents
Concentric interconnected apparatus for single crystal growing Download PDFInfo
- Publication number
- CN2661710Y CN2661710Y CN 200320108382 CN200320108382U CN2661710Y CN 2661710 Y CN2661710 Y CN 2661710Y CN 200320108382 CN200320108382 CN 200320108382 CN 200320108382 U CN200320108382 U CN 200320108382U CN 2661710 Y CN2661710 Y CN 2661710Y
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- CN
- China
- Prior art keywords
- center
- seed crystal
- control stick
- crucible
- crystal growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a concentric communication single crystal growth device which is applied to the growth of solute single crystal inside melting matter with different component melting matter and high temperature flux; a central sleeve is arranged inside the crucible, which separates the fine powder area for the solute and homosphere melting body solution area and benefits for quick growth of solute single crystal with large size.
Description
Technical field
The utility model relates to the device of single crystal growing, particularly a kind of concentric connection single-crystal growing apparatus.
Background technology
Existing single-crystal growing apparatus is the crucible of a drum shape basically, the gradient of formation temperature up and down at crucible, there is seed crystal at the top and lifts wheelwork, this single crucible device only is applicable to the growth of silicon single-crystal in the silicon melt, or the compound monocrystal growth with congruent melting character, be not suitable for growth with solute monocrystalline in congruent melting material and the antiflux.
Summary of the invention
Single-crystal growing apparatus of the present utility model is a kind of concentric connection single-crystal growing apparatus, comprise alumina crucible 12, silicon molybdenum pipe heating element 13, induction agitation elements 7, location thermopair 8, seed crystal control stick 9, cooling cover 10, cooler 11, it is characterized in that: the centre bit at crucible 12 is equipped with a center 1, center 1 is the hollow circular-tube at a no end, concentric with the medullary ray of crucible 12, have several through holes 5 in the lower end of center 1, center 1 is separated into three zones (for sake of convenience with the volume space in the crucible 12, below with SiC be in the antiflux the solute monocrystalline be grown to example), be respectively that the zone that is mixed with the solute carbide fine powder claims high density SiC heterogeneous body district 3, volume space in center 1 claims homogeneous melt solutions district 2, lower end in crucible 12 and center 1 distinguishes 4 at the horizontal position of through hole 5 for being communicated with, because near the SiC solubleness of the melt particle is far above the balance saturation solubility, therefore, between high density SiC heterogeneous body district 3 and homogeneous melt solutions district 2, the isothermal concentration gradient is arranged, cooling control by cooling cover 10 and 11 pairs of homogeneous melt solutions districts 2 of cooler, 2, produce the temperature concentration gradient between 3 again, the SiC directivity curve H that its solubleness reduces in solution successively decreases in center 1 from lower to upper, seed crystal 6 is fixed on the lower end of seed crystal control stick 9, can in center 1, move up and down or rotate with seed crystal control stick 9, cooling cover 10 is cold copper billets, be enclosed within on the seed crystal control stick 9, at any time change cold copper billet with the cooling rate in control center's cover 1, cooler 11 is to reach the control of the cooling in the center 1 by mobile water at low temperature or freezing air.
With prior art advantage more of the present invention
The advantage that is communicated with single-crystal growing apparatus with one heart is: the growth that 1) is widely used in not having solute monocrystalline in congruent melting material and the high-temperature solvent; 2) single crystal growth rate is fast, can reach 0.6mm/h to the SiC single crystal growth rate; 3) because separate fully in homogeneous melt solutions district and high density SiC heterogeneous body district, help large size SiC single crystal growing, also other solute large size single crystal growths.
Description of drawings
Fig. 1 is communicated with the single-crystal growing apparatus structural representation with one heart.
Embodiment
The most preferred embodiment one that is communicated with single-crystal growing apparatus with one heart:
Center 1 is concentric with crucible 12, there are a plurality of holes logical 5 lower end of center 1, hole logical 5 should be on the circumference of center 1 uniform distribution, seed crystal control stick 9 lower ends are fixed with seed crystal 6, seed crystal control stick 9 drives seed crystal 6 lifting and rotation in center 1, is with cooling cover 10 and cooler 16 on the upper position of seed crystal control stick 9, and cooling cover 10 is cold copper billets, can often change with the control cooling rate, cooler 16 is to reach cooling by mobile water at low temperature or freezing air;
Embodiment two:
There is the through hole 5 more than three center 1 lower end, and the cylindrical surface of cooling cover 10 and cooler 16 and seed crystal control stick 9 or cylindroid are close to transmit cooling cooling seed crystal 6 and are reached rate of cooling in control center's cover 1.
Claims (4)
1. one kind is communicated with single-crystal growing apparatus with one heart, comprise alumina crucible (12), silicon molybdenum pipe heating element (13), induction agitation elements (7), location thermopair (8), seed crystal control stick (9), seed crystal (6), cooling cover (10), cooler (11), it is characterized in that: be provided with center (1) in the crucible (12), center (1) is a hollow circular-tube, the central lines of the medullary ray of center (1) and crucible (12), insert seed crystal (6) and control stick (9) in center (1) upper end, the lower end of center (1) is seated in the bottom of crucible (12), and the pipe wall of center (1) lower end is provided with through hole (5).
2. concentric connection single-crystal growing apparatus according to claim 1 is characterized in that: the through hole (5) on the center (1) can be more than three or three, and all through hole (5) is evenly arranged on the circumferential line of center (1).
3. according to claim 1 and 2 described concentric connection single-crystal growing apparatus, it is characterized in that: seed crystal (6) is fixed in the lower end of control stick (9), can be with control stick (9) oscilaltion or rotation in center (1).
4. according to claim 1 and 2 described concentric connection single-crystal growing apparatus, it is characterized in that: the upper position of seed crystal control stick (9) is with cooling cover (10) and cooler (12), makes directly be cooled cooling and pass to seed crystal (6) and reach the interior rate of cooling of control center's cover (1) of seed crystal control stick (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320108382 CN2661710Y (en) | 2003-11-24 | 2003-11-24 | Concentric interconnected apparatus for single crystal growing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320108382 CN2661710Y (en) | 2003-11-24 | 2003-11-24 | Concentric interconnected apparatus for single crystal growing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2661710Y true CN2661710Y (en) | 2004-12-08 |
Family
ID=34342661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200320108382 Expired - Fee Related CN2661710Y (en) | 2003-11-24 | 2003-11-24 | Concentric interconnected apparatus for single crystal growing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2661710Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101519797B (en) * | 2009-01-20 | 2012-05-02 | 洛阳金诺机械工程有限公司 | Method for pulling silicon core by crystal crushed material and device for applying same |
-
2003
- 2003-11-24 CN CN 200320108382 patent/CN2661710Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101519797B (en) * | 2009-01-20 | 2012-05-02 | 洛阳金诺机械工程有限公司 | Method for pulling silicon core by crystal crushed material and device for applying same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |