CN2655310Y - Program controllable silicon chip microzone heating controller - Google Patents
Program controllable silicon chip microzone heating controller Download PDFInfo
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- CN2655310Y CN2655310Y CN 03237947 CN03237947U CN2655310Y CN 2655310 Y CN2655310 Y CN 2655310Y CN 03237947 CN03237947 CN 03237947 CN 03237947 U CN03237947 U CN 03237947U CN 2655310 Y CN2655310 Y CN 2655310Y
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Abstract
The utility model relates to a controllable silicon chip micro-zone heating controller which is equipped with a voltage increasing circuit, wherein the output end of the voltage increasing circuit is connected with the silicon chip, the output end of an impulse width modem circuit is connected with the input end of the voltage increasing circuit, the input end of a current signal is connected with the output end of the voltage increasing circuit, the input end of a super voltage protection circuit is connected with the silicon chip, the output end is connected with the input end of the impulse width modem circuit, the input end of a constant current circuit is connected with the silicon chip, the increasing and decreasing constant current auto judge the shift circuit which is respectively connected with the voltage increasing and the constant current circuit, the interface circuit is connected with the constant current circuit, and a voltage sampling port on two ends of the silicon chip is connected with the silicon chip. The utility model is suitable for the silicon chip special resistor feature and integrates the starting, temperature controlling and protection of the silicon chip together, since the volume heat capacity of the silicon chip is small, the utility model can not only flexibly control the temperature, but also saves energy, and has the advantages of quick temperature variation, correct temperature controlling, wide temperature range and the like, more particularly suitable for a CVD test system which need quick temperature change or needs correct temperature controlling, and can act as a constant current device of a big voltage big current to be applied in a constant current controlling circumstances of big charging variation.
Description
(1) technical field
The utility model relates to a kind of heating control apparatus, and the constant-current device of especially a kind of big voltage, big range of current is used in particular for the control device that the silicon chip microcell heats.
(2) background technology
Chemical vapor deposition (CVD) is to utilize gaseous material to carry out chemical reaction at a solid surface, generates the process of solid deposited thing, is the new technology of the inorganic new material of preparation that grew up in nearly ten years.In this preparation method, no matter be pyrolytic reaction, chemosynthesis reaction, chemical reactant transport, all to use heater means.And most reaction all concentrates in 1100 ℃, and tubular furnace is the most normal adopted a kind of type of heating.But not only volume is big, energy consumption is high for tubular furnace, cost an arm and a leg, and the control of heating central temperature is inaccurate, and temperature is reduced gradually by middle mind-set both sides.This environmental protectionization, traceization, precision trend with chemosynthesis now is extremely incompatible.In addition, its intensification cooling rate is slow, can't adapt to the needs of the CVD compound experiment of fast temperature variation.
(3) summary of the invention
The purpose of this utility model is to provide a kind of silicon chip stability at high temperature of utilizing, it directly is heating load with the silicon chip, the collection silicon chip heats and is deposited on one, energy consumption low (less than 240W) not only, heating-up temperature wide ranges (normal temperature～1200 ℃), temperature precise control (stable back temperature variation is less than 5 ℃), temperature variation rapidly (greater than 200 ℃/S), and can pass through the computer program-control silicon temperature, improve the program-controlled silicon chip microcell heating controller of CVD test dirigibility greatly.
The utility model is provided with:
Booster circuit, the external silicon chip (load) that is heated of booster circuit output terminal is used for when silicon chip is in cold state, supply voltage is boosted with the startup silicon chip, and reduce voltage in real time along with silicon chip heats up.
Pulse-width modulation circuit, its pulse-width signal output termination booster circuit signal input end, for booster circuit provides pulse-width signal, the current signal output end of over-current signal input termination booster circuit is for booster circuit provides overcurrent protection.
The overpressure protection circuit, its superpressure is judged the external silicon chip that is heated of signal input part, its superpressure shutdown signal is exported the modulation signal input end of termination pulse-width modulation circuit, is used for monitoring in real time the output voltage of booster circuit.
Constant-current circuit, the external silicon chip that is heated of its input end is used to control the silicon chip electric current, to realize the purpose of control silicon temperature.
Boost or commutation circuit is judged in the step-down constant current automatically, connect booster circuit and constant-current circuit respectively, the work that is used for booster circuit and constant-current circuit is switched.
Interface circuit, its current sample port connects constant-current circuit, is heated the external silicon chip that is heated of silicon chip both end voltage sample port, is computing machine or Single-chip Controlling temperature interface, and monitors silicon chip both end voltage, current sample port.
Power supply connects booster circuit, pulse-width modulation circuit, overpressure protection circuit, constant-current circuit respectively, boosts or commutation circuit and interface circuit etc. are judged in the step-down constant current automatically.
The utility model is by control silicon chip electric current (0～5A) purpose that realizes the control silicon temperature for example of flowing through.At the beginning, silicon chip is in room temperature state, and resistance surpasses 5000 Ω (, silicon chip that 1mm thick square for 10mm * 50mm), and essential (for example 48V) is increased to about 300V with supply voltage by booster circuit, just can make silicon chip obtain enough energetic start ups and heat up.After silicon temperature surpassed 300 ℃, silicon chip resistance descended fast, and electric current increases rapidly, and heating power also increases rapidly, and silicon temperature sharply raises, and needed downward modulation voltage in good time this moment, otherwise silicon chip is with rapid red heat and burst.When silicon chip arrived design temperature (for example normal temperature～1200 ℃), the resistance of silicon chip dropped to about 3～10 Ω, and must in time close booster circuit this moment, and silicon chip is carried out constant current control, and finally realize the constant temperature purpose.Simultaneously for guaranteeing the safe and reliable of the utility model work, circuit design 1) 350V overpressure protection circuit when preventing the unloaded or fracture of silicon chip, prevent that overtension from burning element; 2) circuit is to the overcurrent protection of booster circuit and constant-current circuit; 3) the program control silicon temperature of computing machine/single-chip microcomputer for convenience, circuit design interface circuit, connect that computing machine/(0～5V) is the may command silicon temperature in single-chip microcomputer D/A (digital-to-analogue conversion) output; 4) interface circuit also provide silicon chip both end voltage, current sample interface (0～5V), not only can control silicon temperature easily, can also monitor the state of silicon chip easily in real time by A/D (analog digital conversion) input of computing machine/single-chip microcomputer.
The utility model is the silicon chip heating device for automatically controlling of the design in order to adapt to the special resistance characteristic of silicon chip (resistance varies with temperature very big), integrates the multiple functions such as startup, temperature control, protection of silicon chip.Because the silicon chip volumetric heat capacity is little, not only can control temperature flexibly, also reaches the purpose (tubular furnace mostly is 1000-2000W, and this device peak power is 240W) of the environmental protection and saving energy.Have temperature variation rapidly, characteristics such as temperature precise control, temperature range be wide, especially be fit to need fast temperature to change or need the accurately CVD test system of control temperature.This device is used for actual CVD test, and is respond well.This device can also ((0～5A) constant-current device can be applicable to the constant current control occasion that some heavy loads change to 0～300V) big electric current as big voltage range in addition.
(4) description of drawings
Fig. 1 is the utility model embodiment circuit block diagram.
Fig. 2 is the circuit theory diagrams of the utility model embodiment.
(5) embodiment
As Fig. 1, shown in 2, present embodiment adopts the Switching Power Supply 1 of 48V 5A, offers reduction voltage circuit 2, booster circuit 3 and constant-current circuit 4.Reduction voltage circuit 2 is 18V with the 48V voltage step-down, offers pulse-width modulation circuit 5, overvoltage crowbar 6, constant-current circuit 4, interface circuit 7, boosts or commutation circuit 8 is judged in the step-down constant current automatically.Reduction voltage circuit 2 mainly is made up of Darlington transistor Q4 (TIP122 type), stabilivolt Z3 (18V), electrochemical capacitor C7 (1000 μ F/25V) etc.
Booster circuit 3 boosts to 48V about 300V when silicon chip is in cold state, to start silicon chip, heats up with silicon chip, reduces voltage in real time.Booster circuit 3 is mainly by field effect transistor Q1, Q2 (IRF830 type), inductance L 1, L2, diode D1, D2 and capacitor C 2 compositions such as (10 μ F).
Pulse-width modulation circuit 5 adopts integrated circuit U2 (S63524 type) pulse width modulating chips, and for Q1, the Q2 of booster circuit provides width modulation (PWM) signal, frequency of operation is set in 10KHz, and the overcurrent protection of Q1, Q2 is provided simultaneously.Pulse-width modulation circuit 5 is mainly by U2, resistance R 1～R3, R7, R8, stabilivolt Z1, Z2, compositions such as capacitor C 3, C4.
Overpressure protection circuit 6 is the monitoring output voltage in real time, when output voltage surpasses 350V, promptly gives shutdown signal of U2, the pwm signal of the timely sever supply Q1 of U2, Q2, stop booster circuit work, protect components and parts, and provide superpressure (over voltage) indication by LED 3; When voltage was lower than 350V, shutdown signal automatically terminated, and recovered booster circuit work.Overpressure protection circuit 6 is mainly by the amplifier (1) of four-operational amplifier U1 (LM324 type), LED 3, compositions such as resistance R 4～R6, R22.
(0～5A) with realization control silicon temperature purpose, and field effect transistor Q3 (IRF830 type) is carried out overcurrent protection for constant-current circuit 4 control silicon chip electric currents; Constant-current circuit 4 mainly is made up of amplifier (4), Q3, the resistance R 15～R17 etc. of U1.
Boost or the step-down constant current judges that automatically commutation circuit 8 when silicon chip is in cold state, opens booster circuit, close constant-current circuit work, (48～350V) directly offer silicon chip to start silicon chip to make voltage after boosting; When silicon chip reaches predetermined temperature, cut off booster circuit work, open constant-current circuit, control provides the electric current of silicon chip, and by LED 2 indication current states.Boost or the step-down constant current judges that automatically commutation circuit 8 mainly is made up of amplifier (4), LED2, the resistance R 18～R21 etc. of four-operational amplifier U3 (LM324 type).
Interface circuit 7 provides computing machine/Single-chip Controlling temperature interface (0～5V input), computing machine/microcomputer monitoring silicon chip both end voltage, current sample port (0～5V output).Mainly by the amplifier (3) of U3, the amplifier of U1 (3) and amplifier (2) are controlled acquisition interface J2 (V/I out ﹠amp to interface circuit 7; Control in), capacitor C 5 (1000 μ F/6.3V), compositions such as resistance R 9, R13, R14, R23～R26.
Heating silicon chip 9 is the external heating load of the utility model embodiment.
Below provide the model and the parameter of part components and parts among Fig. 2:
LED 1:48V, LED4:18V;
Resistance R 1, R2, R10:5.1K, R3, R15:0.1 Ω, R4:620K, R5, R16, R17, R27:10K, R6, R20:2.2K, R7:50K, R8, R19:12K, R9:510K, R11:180K, R12, R14:1K, R13:9.1K, R18:6.2K, R21, R22:3.5K, R23, R24:1M, R25, R26:20K, R28:2K:
Capacitor C 1:10 μ F, C3:0.001 μ F, C4:0.01 μ F, C6:1000 μ F/50V;
Potentiometer Rj:50K;
Output interface J1 (input of+48V power supply and silicon chip heating output interface) :+48V;
Reference voltage output and pulse-width signal Frequency Output Interface Circuit J3:(+5V/OSC out).
Claims (1)
1, program-controlled silicon chip microcell heating controller is characterized in that being provided with:
Booster circuit, the external silicon chip that is heated of booster circuit output terminal;
Pulse-width modulation circuit, its pulse-width signal output termination booster circuit signal input end, the current signal output end of over-current signal input termination booster circuit;
The overpressure protection circuit, its superpressure is judged the external silicon chip that is heated of signal input part, the modulation signal input end of its superpressure shutdown signal output termination pulse-width modulation circuit;
Constant-current circuit, the external silicon chip that is heated of its input end;
Boost or commutation circuit is judged in the step-down constant current automatically, connect booster circuit and constant-current circuit respectively;
Interface circuit, its current sample port connects constant-current circuit, is heated the external silicon chip that is heated of silicon chip both end voltage sample port;
Power supply connects booster circuit, pulse-width modulation circuit, overpressure protection circuit, constant-current circuit respectively, boosts or commutation circuit and interface circuit are judged in the step-down constant current automatically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03237947 CN2655310Y (en) | 2003-09-11 | 2003-09-11 | Program controllable silicon chip microzone heating controller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03237947 CN2655310Y (en) | 2003-09-11 | 2003-09-11 | Program controllable silicon chip microzone heating controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2655310Y true CN2655310Y (en) | 2004-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03237947 Expired - Fee Related CN2655310Y (en) | 2003-09-11 | 2003-09-11 | Program controllable silicon chip microzone heating controller |
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| CN (1) | CN2655310Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106053546A (en) * | 2015-04-17 | 2016-10-26 | 微电子中心德累斯顿有限公司 | Arrangement and method for measuring and controlling heating temperature in semiconductor gas sensor |
| CN114498562A (en) * | 2022-01-17 | 2022-05-13 | 深圳市瑞沃德生命科技有限公司 | Protection circuit and biological sample preparation device |
-
2003
- 2003-09-11 CN CN 03237947 patent/CN2655310Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106053546A (en) * | 2015-04-17 | 2016-10-26 | 微电子中心德累斯顿有限公司 | Arrangement and method for measuring and controlling heating temperature in semiconductor gas sensor |
| CN114498562A (en) * | 2022-01-17 | 2022-05-13 | 深圳市瑞沃德生命科技有限公司 | Protection circuit and biological sample preparation device |
| CN114498562B (en) * | 2022-01-17 | 2023-05-30 | 深圳市瑞沃德生命科技有限公司 | Biological sample preparation device |
| WO2023134533A1 (en) * | 2022-01-17 | 2023-07-20 | 深圳市瑞沃德生命科技有限公司 | Protective circuit and biological sample preparation device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |