CN2600809Y - Device for measuring sample height on substrate based-on atomic force microscope - Google Patents
Device for measuring sample height on substrate based-on atomic force microscope Download PDFInfo
- Publication number
- CN2600809Y CN2600809Y CNU032281293U CN03228129U CN2600809Y CN 2600809 Y CN2600809 Y CN 2600809Y CN U032281293 U CNU032281293 U CN U032281293U CN 03228129 U CN03228129 U CN 03228129U CN 2600809 Y CN2600809 Y CN 2600809Y
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- sample
- height
- pinpoint
- needle point
- atomic force
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Abstract
A device measuring the sample height on the substrate on the base of the atomic force microscope comprises an atomic force microscope, a function generator, an ondoscope, etc; applying a certain bias voltage at a conductive pinpoint, so that the electric field is induced between the pinpoint and a sample. The long range electric-field force superposing on the Van Der Vaals force can enlarge the distance between the pinpoint and the sample, the vertical movement of the pinpoint can be more easily controlled, and the image can formed at the different heights. The sample height can be achieved by adjusting the Asp (the applied force at the pinpoint) parameter or the scanning height parameter which is inserted into the scanning channel to change the pinpoint height. The utility model has the advantages of simple structure, the convenient application, easier vertical movement control of the pinpoint; and the device has more advantages in the height measurement of the soft biological sample, the pinpoint pressure on the sample is eliminated to a great extent.
Description
Technical field
The utility model relates to a kind of device based on height of specimen on the measurement substrate of atomic force microscope, specifically, is a kind ofly to rap the device that the height of needle point in the mode atomic force microscopy is measured height of specimen on the substrate by change.
Background technology
Atomic force microscope AFM (Atomic Force Microscopy) generally measures the height of sample on the substrate in sectional view (profile) (Langmuir 2000 for Sanjay Kumar, Jan H.Hoh; 16:9936-9940).Rap Mode A FM and generally be used for soft biomolecule imaging, because compare with contact mode AFM, its cross shear is littler, and is littler to movement of sample and destruction.Even but in rapping Mode A FM, needle tip pressure still can make soft biomolecule height decline (A.D.L.Humphris Surf.Sci.2001; 491:468-472).Repulsive force in the Van der Waals force of this source pressure between needle point atom and sample atoms is even can not avoid in rapping Mode A FM.
AFM utilizes the Van der Waals force of needle point and sample room to carry out imaging, and the effect range of Van der Waals force is very short, so needle point only could be stablized imaging at the height very close to sample surfaces.If needle point is raised the repulsive force that reduces needle point and sample room, Van der Waals force with deficiency so that needle point in this highly stable work.
The AFM of DI company can raise metering needle cusp height under the pattern (lift mode): open two channels, in the main sweep channel with the surface topography imaging of the pattern of rapping to sample, after finishing a horizontal scanning line, feedback system is closed, on the basis of the elevation information that main sweep obtains, redefine the position of needle point according to the scanning height parameter in the insertion channel scanning, or raise or reduce, same position on the sample is scanned, carry out so repeatedly, up to having scanned a complete figure.This method generally is used to obtain the information of sample surfaces electricity or magnetics aspect, but is not applied in the measurement of height of specimen.
Summary of the invention
The purpose of this utility model is to solve the following shortcoming of atomic force microscope in measuring samples height process: because atomic force microscope is to utilize the Van der Waals force between needle point atom and sample atoms to carry out imaging, closely the time, repulsive force in the Van der Waals force can impact sample molecule, and because the effect range of Van der Waals force is very short, distance deficiency again too far away is so that the needle point steady operation.At above shortcoming, the utility model is at the device that raps on the basis of mode atomic force microscopy height of specimen on a kind of new measurement substrate of development, this apparatus structure is simple, easy to use, can be at various height go up and stablize imaging, thereby avoid repulsive force between needle point and sample molecule the influence of sample measurement.
For reaching this purpose, the utility model adopts following technical scheme to build the measurement mechanism of sample on the AFM substrate:
Scanatron is put substrate on it, place sample soft or rigidity on the substrate;
Sample top needle tip bracket on adorn a conductive pinpoint, it and a piezoelectric ceramic wafer closely combine, and by control system control piezoelectric ceramic wafer, thus the drive needle point vibrates under certain driving frequency;
Laser beam focuses on the minute surface at the needle point cantilever back side, the skew of the folded light beam that the cantilever bending that causes causes because the height of sample surfaces rises and falls that the photodiode of a quaternary is used for test sample when scanning;
Function generator, being used to export 0 arrives ± 15V, frequency is direct current and the alternating current of 200～300KHz, be input in the microscope by coaxial wire, one of cable links to each other with the support of needle point, other end ground connection, in addition, one oscillograph links to each other by another coaxial wire and function generator, to follow the tracks of its voltage swing of being exported and frequency;
Measurement mechanism of the present utility model compared with prior art, not only apparatus structure is fairly simple, easy to use, and make needle point in vertical direction move easier control, can go up at various height and stablize imaging, measure especially and more have superiority, eliminated the pressure of needle point to a great extent sample at the height of the biological sample of softness.
Description of drawings
Fig. 1 is the structural representation based on the device of height of specimen on the measurement substrate of atomic force microscope of the present utility model.
Embodiment
Below by specific embodiment, the utility model is described in further detail.
As shown in Figure 1, the utility model comprises:
Sample 3 soft or rigidity places on the substrate 2, and substrate 2 places on the scanatron 1;
By a support one conductive pinpoint 4 is set above sample, conductive pinpoint 4 is plating one deck inert metal Pt on the silicon needle point, thick about 200～300 , and it and piezoelectric ceramic wafer 7 closely combine.AFM control system 8 control piezoelectric ceramic wafers 7 drive needle point and vibrate under certain driving frequency.
Laser beam 6 focuses on the minute surface at the needle point 4 cantilever back sides, and when to sample 3 scannings, because the cantilever bending that the fluctuating of the height on sample 3 surfaces causes can cause the skew of folded light beam, this variation is detected by the photodiode 5 of a quaternary.
Function generator 11 (model: Agilent 33120 (Agilent Headquarters:395, Mill Rd., P.O.Box #10395, Palo Alto, CA)), can export 0 arrives ± 15V, frequency is direct current and the alternating current of 200～300KHz, is input in the microscope by coaxial wire 9, and 9 one supports with needle point 4 of cable link to each other, other end ground connection can be induced the generation electric field between needle point 4 and sample surfaces.Oscillograph 12 links to each other by another coaxial wire 10 and function generators, follows the tracks of the voltage of being exported.
On needle point 4, apply certain bias voltage, can between needle point 4 and sample 3, induce the formation electric field.The electric field force of this long-range is superimposed upon the distance that can enlarge needle point 4 and sample 3 on the Van der Waals force, makes needle point 4 mobile easier control in vertical direction, and can go up at various height and stablize imaging.Because interatomic repulsive force only works in the distance of several , the lifting of needle point 4 reduces repulsive force rapidly, and just sample 3 suffered pressure reduce, so the deformation that takes place also reduces thereupon.
As shown in Figure 1, the size of regulating Amplitude Setpoint (Asp, i.e. added power on the needle point) in the main sweep changes the position of needle point 4: within the specific limits, Asp changing value and the displacement of needle point 4 on the Z axle are the line style relations.Asp is provided with greatly more, and needle point 4 is far away more apart from the surface; Otherwise needle point 4 is the closer to the surface.This device is in use controlled needle point 4 moving on vertical (Z) direction by the Asp that is provided with in the AFM control system 8.Earlier Asp is changed certain value, stepped on the sectional view of gained white space fixed point scanning, measure ladder step spacing, draw Asp changing value and needle point 4 relation at Z axle top offset.With this understanding, bigger Asp is set earlier makes needle point 4, constantly reduce Asp, from seeing the upper surface of sample 3, to clearly seeing substrate 2 surface end away from sample.Can calculate the distance that needle point 4 moves from the difference of Asp, this segment distance is exactly the height of sample 3 on the substrate 2.
Perhaps this device also can be controlled needle point 4 moving on vertical (Z) direction by the scanning height parameter of raising in the AFM control system 8 under the pattern is set.Raising under the pattern, regulate the height that the scanning height parameter of inserting in the channel scanning changes needle point 4: the value of scanning height parameter is provided with more just, and needle point 4 is far away more apart from the surface, otherwise needle point 4 is the closer to the surface.In main sweep, make needle point 4 away from sample 3, make sample 3 on image, not have contrast, keep needle point 4 like this at a constant height; And in inserting scanning, constantly reduce the scanning height parameter, and beginning to clearly seeing substrate 2 surface end from the upper surface of seeing sample 3, the difference of scanning height parameter is exactly the height of sample 3 on the substrate 2.
Claims (2)
1, a kind of device based on height of specimen on the measurement substrate of atomic force microscope comprises: scanatron (1), put substrate (2) on it, and substrate (2) is gone up and is placed sample (3) soft or rigidity;
Adorn a conductive pinpoint (4) on the needle tip bracket of sample (3) top, it and a piezoelectric ceramic wafer (7) closely combine, and, under certain driving frequency, vibrate thereby drive needle point (4) by a control system (8) control piezoelectric ceramic wafer (7);
Laser beam (6) focuses on the minute surface at the needle point cantilever back side, the skew of the folded light beam that the cantilever bending that the height fluctuating the on when photodiode of a quaternary (5) is used for test sample (3) scanning because sample (3) surface causes causes;
It is characterized in that: also comprise function generator (11), be used to export 0 to ± 15V, frequency is direct current and the alternating current of 200～300KHz, be input in the microscope by coaxial wire (9), (9) supports with needle point (4) of cable link to each other, other end ground connection, in addition, an oscillograph (12) links to each other by another coaxial wire (10) and function generator (11), to follow the tracks of its voltage swing of being exported and frequency;
2, the device based on height of specimen on the measurement substrate of atomic force microscope as claimed in claim 1 is characterized in that: conductive pinpoint (4) is plating one deck inert metal Pt on the silicon needle point, thick 200～300 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032281293U CN2600809Y (en) | 2003-01-10 | 2003-01-10 | Device for measuring sample height on substrate based-on atomic force microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032281293U CN2600809Y (en) | 2003-01-10 | 2003-01-10 | Device for measuring sample height on substrate based-on atomic force microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2600809Y true CN2600809Y (en) | 2004-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032281293U Expired - Fee Related CN2600809Y (en) | 2003-01-10 | 2003-01-10 | Device for measuring sample height on substrate based-on atomic force microscope |
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| CN (1) | CN2600809Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033171B (en) * | 2009-09-24 | 2012-11-21 | 宁波大学 | Method for measuring dielectric property of single molecule |
| CN103196400A (en) * | 2013-04-08 | 2013-07-10 | 常州同泰光电有限公司 | Method for measuring patterned substrate |
| CN110794172A (en) * | 2019-11-13 | 2020-02-14 | 北京机械设备研究所 | Method and device for measuring thickness of film grown on substrate |
-
2003
- 2003-01-10 CN CNU032281293U patent/CN2600809Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033171B (en) * | 2009-09-24 | 2012-11-21 | 宁波大学 | Method for measuring dielectric property of single molecule |
| CN103196400A (en) * | 2013-04-08 | 2013-07-10 | 常州同泰光电有限公司 | Method for measuring patterned substrate |
| CN110794172A (en) * | 2019-11-13 | 2020-02-14 | 北京机械设备研究所 | Method and device for measuring thickness of film grown on substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |