CN2576728Y - Straight-drawing mono-crystal generation device - Google Patents
Straight-drawing mono-crystal generation device Download PDFInfo
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- CN2576728Y CN2576728Y CN 02285928 CN02285928U CN2576728Y CN 2576728 Y CN2576728 Y CN 2576728Y CN 02285928 CN02285928 CN 02285928 CN 02285928 U CN02285928 U CN 02285928U CN 2576728 Y CN2576728 Y CN 2576728Y
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- crucible
- pulling
- hot wall
- sealing cover
- seed rod
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Abstract
The utility model discloses a straight-drawing monocrystal generation device, which comprises a seed rod, a crucible and a crucible rod which is connected with the bottom of the crucible, wherein, a sealing cover which is used for sealing the hot wall of the crucible is arranged above the crucible; the connected position of the sealing cover of the hot wall and the crucible is provided with a dynamic sealing device; the seed rod penetrates through the sealing cover of the hot wall to extend into the crucible and connect with the sealing cover of the hot wall into integration. The utility model solves the problems of the complicated structure and many sealing links of the existing straight-drawing monocrystal generation device; sealing can be realized only under the condition that the connected position of the sealing cover of the hot wall and the crucible is provided with the dynamic sealing device; the utility model overcomes the defects of high cost, poor reproducibility, the nonadaptability of industrialization production, difficulties of the assurance of favorable sealing effect, etc. which are caused by multiple sealing links and the complicated structure of the existing straight-drawing monocrystal generation device.
Description
Technical field
The utility model relates to a kind of pulling of crystals growing apparatus, belongs to the growing semiconductor crystal equipment technical field.
Background technology
Silicon single crystal generally is used to make unicircuit and other electron component as a kind of semiconductor material.Most semiconductor silicon single crystal body adopts the vertical pulling method manufacturing, the following manufacture method of general employing: polysilicon is put in the quartz crucible, heat fused, then, to melt silicon and slightly do cooling, give certain condensate depression, the silicon single crystal of a particular crystal orientation (being called seed crystal) is packed in the silicon seed clamper, and the upper end of silicon seed clamper is connected with seed shaft by web member, and seed crystal is fixed in the lower end of clamper, and seed crystal is contacted with silicon melt, by the temperature of adjusting melt and the pulling speed that seed crystal makes progress, seed body is grown up, when the diameter of silicon crystal during near aimed dia, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the last stage of process of growth, silicon melt not completely dissolve as yet in the quartz crucible, by increasing the heat supplied in crystalline pulling speed and the quartzy crucible of adjustment, crystal is reduced gradually, thereby form a tail shape cone, when sharp enough hour of cone, crystal will break away from melt, thereby finished the crystalline process of growth.It is also like this substantially to draw III-V compound semiconductor monocrystalline.
The aforesaid operations process generally adopts single crystal growing furnace; single crystal growing furnace comprises: crucible, body of heater, drive unit, seed rod heating unit etc.; it is different with the drawing silicon single-crystal to draw III-V compound semiconductor monocrystalline; in order to ensure the stoicheiometry in the compound monocrystal body; prevent the compound decomposition loss; a heat seal container normally is installed outside the crucible of single crystal growing furnace, is made in the mixing steam that from crucible, is evaporated and the crucible liquid reach transient equilibrium, guarantee the stoicheiometry in the compound monocrystal body.The general at present heat seal container that uses is an one-piece construction, and it installs inconvenient, can not open under hot state, and can not reuse, and increases production cost simultaneously.
In order to address the above problem, China utility model patent 2470372Y discloses a kind of vapour pressure control pulling of crystals growing apparatus on 01 09th, 2002, referring to Fig. 1, the structure of having showed vapour pressure control pulling of crystals growing apparatus among Fig. 1, this device is that heat seal container 2 is housed in monocrystalline body of heater 1, heat seal container 2 is made up of upper and lower two container bodies 3,4, between the upper and lower container 3,4 sealing and connecting device 5 is housed, heat seal container 2 surrounds crucible 6, and crucible transmission rod 7 and seed rod 8 enter heat seal container 2 by tightness system 9,10 respectively.Wherein sealing and connecting device 5 is made of annular recesses, and annular recesses is connected as a single entity with following container body 4 upper port, and the lower end of upper container body 3 is inserted in the annular recesses.Because the seed rod of this device must pass the top that the upper end of heat seal container 2 extend into crucible, therefore, between upper container body 3 and seed rod 8, must be provided with baroque tightness system 9, equally, the crucible dwang 7 of lower end also must pass down container body 4 and connect as one with crucible, must be provided with complex structure tightness system 10 between container body 4 and the crucible dwang 7 down.Therefore, this vapour pressure control pulling of crystals growing apparatus matter of utmost importance is: heat seal container 2 need be provided with three place's tightness systems, many, the complex structure of its sealing part, reduce the reliability of sealing effectiveness thus, for example: the tightness system 9 at seed rod place shown in Figure 2, it mainly is made up of sealing chamber 13 and wear ring 14, have annular recesses 15 in the sealing chamber 13, the bottom has centre hole 16, wear ring 14 external peripheral surfaces and sealing chamber 13 internal surfaces closely cooperate, the groove 17 of wear ring 14 and the annular recesses of sealing chamber 13 15 relative formation fluid reservoirs 18.Its complex structure, when the seal area resistance was big, the ring groove place easily twisted off, thereby made the sealing failure.The structure and the tightness system 9 that are located at down the tightness system 10 between container body 4 and the crucible dwang 7 are roughly the same, and its same complex structure is difficult to guarantee sealing reliability.
Sealing and connecting device 5 is to make its fusing by placing boron oxide in groove, boron oxide being heated, and the lower end of upper container body 3 is inserted in the liquid oxidatively boron of annular recesses, realizes liquid airproof.Therefore another problem of its existence is: because boron oxide is met cold shrinkage strain, thereby the annular recesses that makes graphite material produces distortion even cracks, generally only use once back sealing coupling device just to lose efficacy, can't realize reusing the purpose of heat seal container, production cost is increased.Because revolving force is big, torsion is big, unstable, ring seal place is broken easily simultaneously.
Another problem of this device is: the seed rod and the syndeton between the seed crystal of this device are unreasonable, it passes the seed rod wall by steady brace and holds out against seed crystal, with fixing seed crystal, this kind clamper is fit to make the crystal of minor diameter, generally can only make diameter less than 160 millimeters, weight is no more than the crystal of 60Kg.When seed crystal is used to make crystal greater than this scope, just easy gap portions fracture at seed crystal, reduce access times, increase cost, therefore this structure is limited to when drawing crystal, can not be applicable to bigger monocrystalline production, simultaneously, seed crystal is fixed with steady brace, is difficult for taking off seed crystal after coming out of the stove.
Summary of the invention
The primary technical problem that solves of the utility model is: existing pulling of crystals growth cell configuration complexity, the problem that sealing part is many, promptly must on the heat seal container, establish upper, middle and lower three place's tightness systems, thereby pulling of crystals growth cell configuration complexity, cost are increased, poor repeatability, be unsuitable for industrialization production, and be difficult to guarantee good sealing effectiveness.
Another technical problem to be solved in the utility model is: the annular recesses of graphite grazing coupling device cools off shrinkage strain because of boron oxide, is easy to generate crackle, because revolving force is big, torsion is big, unstable, sealing place is broken easily simultaneously.
Another problem to be solved in the utility model is: overcome in the prior art the fixing unstable problem of seed crystal, and seed crystal fixes with steady brace, be difficult for taking off the problem of seed crystal after coming out of the stove.
In order to address the above problem, the technical scheme that the utility model will be taked is: a kind of pulling of crystals growing apparatus, comprise seed rod, crucible and be connected in the crucible pole of crucible bottom, be provided with the hot wall sealing cover that is used for sealed crucible above the described crucible, described hot wall sealing cover and crucible connecting portion are provided with dynamic sealing means, and described seed rod passes the hot wall sealing cover and stretches in the crucible chamber and be connected as a single entity with the hot wall sealing cover.
Wherein, described dynamic sealing means comprises the annular recesses that is positioned at the crucible upper port and is connected as a single entity with crucible, be provided with the ring-type crack stopper that a cross section is U font and annular recesses inwall both sides shrink-fit in annular recesses, the cross section that the lower port of described hot wall sealing cover is inserted the ring-type crack stopper is in the annular recesses of U font.
The structure of described seed rod is: described seed rod is to have one vertically to connect the hollow shaft-like of cavity, and the lower end cavity that is used for the clamping seed crystal of described seed rod is contraction-like, is preferably down round table-like or chamfered edge platform shape.The rounding platform of the lower end cavity of described seed rod or the tapering of chamfered edge platform are 30 °-150 °.
The structure of described seed rod can also be to have one vertically to connect the hollow shaft-like of cavity for: described seed rod, and the lower end cavity that described seed rod is used for the clamping seed crystal is the cylindric or prism-shaped of radial dimension less than upper cavity.
For convenience, can further be provided with view port on the top of described hot wall sealing cover.
Further, be set with crucible in the described crucible.
Owing to adopt said structure, do not need to establish in addition the heat seal container, but on crucible, directly be provided with a hot wall sealing cover, be connected by dynamic sealing means between sealing cover and the crucible and seal, adopt such structure, omitted between seed rod and the heat seal container and needed to be provided with baroque tightness system, also omitted tightness system between the crucible dwang of same bottom and the heat seal container, only need the sealing of 1 place, it is the sealing between crucible and the hot wall sealing cover, make that the structure of whole device is more simple, reduced cost, reduce the sealing loops, guaranteed that the interior gas composition control of the reliability device plane of crystal of sealing decomposes, improved the crystalline quality; The line system good reproducibility, more convenient operation is suitable for industrialization production.
Simultaneously, in dynamic sealing means, increase crack stopper, overcome existing graphite dynamic sealing means and be easy to generate crackle, and then caused the inefficacy of whole heat seal container, heat seal container and crucible can be reused.
And, adopt the lower end to be and shrink poroid hollow shaft-like seed rod lifting seed body, seed crystal is connected firmly, and is easy to take off seed crystal after coming out of the stove.
Description of drawings
Fig. 1 is the structural representation of the disclosed vapour pressure control of 2470372Y utility model patent pulling of crystals growing apparatus;
Fig. 2 is the structural representation of the tightness system 9 of the disclosed vapour pressure control of 2470372Y utility model patent pulling of crystals growing apparatus;
Fig. 3 is the structural representation of pulling of crystals growing apparatus of the present utility model;
Fig. 4 is the structural representation of the dynamic sealing means of pulling of crystals growing apparatus of the present utility model;
Fig. 5 a, 5b, 5c are the seed rod and the seed crystal connection diagram of pulling of crystals growing apparatus of the present utility model;
Fig. 6 a, 6b, 6c for the utility model embodiment in the structural representation of the seed crystal that is complementary of seed rod.
Wherein: body of heater 101 furnace chambers 102 hot wall sealing covers 103
Dynamic sealing means 104 crucibles 105 sealing melts 106
GaAs melt 107 crucible poles 108 single crystal 109
Seed crystal 110 seed rods 111 view ports 112
Crucible 116 in the crucible chamber 113 ring-type crack stoppers 114
Groove 1141
Specific embodiments
Referring to Fig. 3, showed a kind of pulling of crystals growing apparatus among the figure, this device places in the body of heater 101, and it comprises the seed rod of being made by refractory ceramics 111, the crucible 105 that graphite is made, the crucible pole 108 that graphite is made, hot wall sealing cover 103 and the dynamic sealing means 104 that refractory ceramics is made.Crucible pole 108 is connected in crucible 105 bottoms, hot wall sealing cover 103 be located at described crucible 105 above, be used for sealed crucible; Described hot wall sealing cover 103 and crucible 105 connecting portions are provided with dynamic sealing means 104, and seed rod 111 passes hot wall sealing cover 103 and stretches in the crucible chamber and be connected as a single entity with hot wall sealing cover 103.Crucible pole 105 stretches out outside the body of heater 101 and links to each other with drive unit, and the upper end of seed rod 111 is stretched out body of heater 101 tops and linked to each other with drive unit.
Referring to Fig. 4, wherein, described dynamic sealing means 104 comprises the annular recesses 1051 that is positioned at crucible 105 upper port and is connected as a single entity with crucible 105, be provided with the ring-type crack stopper 114 that a cross section is U font and annular recesses inwall both sides shrink-fit in annular recesses 1051, the lower port of described hot wall sealing cover 103 is inserted in the groove 1141 of annular recesses 1051 and 114 formation of ring-type crack stopper.Ring-type crack stopper 114 is made by high strain graphite material, has avoided the sealing melt directly to contact with tightness system, and because temperature variation makes it produce distortion and crackle; Is improved the work-ing life of annular seal device 114.
Convenient in order when preparing monocrystalline, to observe, be provided with view port 112 on the top of described hot wall sealing cover 103.In addition, be set with crucible 116 in the general described crucible 105, crucible adopts different materials according to drawing different monocrystalline in this, for example: draw gallium arsenide, adopt PBN (boron nitride) crucible.
Referring to Fig. 5 a, the structure of having showed seed rod 111 and seed crystal 110 among the figure, described seed rod 111 vertically connects the hollow shaft-like of cavity 1111 for having one, the cavity 1111 of described seed rod 111 is the quadrangular shape, and the lower end cavity 1112 that is used for the clamping seed crystal of described seed rod 111 is contraction-like, and be the shape of falling the truncated rectangular pyramids, the tapering of this chamfered edge platform is 30 °.The shape of seed crystal 110 upper ends that it lifted and the shape of cavity 1111 and lower end cavity 111 are complementary, referring to Fig. 6 a.
Referring to Fig. 5 b, the structural shape of having showed another kind of seed rod and seed crystal 110 among the figure, described seed rod 111 vertically connects the hollow shaft-like of cavity 1111 for having one, the cavity 1111 of described seed rod 111 is cylindric, and the described seed rod 111 lower end cavity 1112 that is used for the clamping seed crystal is diameter cylindric less than upper cavity 1111.The shape of seed crystal 110 upper ends that it lifted and the shape of cavity 1111 and lower end cavity 111 are complementary, referring to Fig. 6 b.
Referring to Fig. 5 c, the structural shape of having showed another seed rod and seed crystal 110 among the figure, described seed rod 111 is hollow shaft-like, the cavity 1111 of described seed rod 111 is cylindric, and the lower end cavity that is used for the clamping seed crystal 1112 of described seed rod 111 is the shape of falling the truncated rectangular pyramids, and the tapering of this terrace with edge is 40 °.The shape of seed crystal 110 upper ends that it lifted and the shape of cavity 1111 and lower end cavity 111 are complementary, referring to Fig. 6 c.
What should give explanation is, the shape of seed rod 111 is not limited to above-mentioned three kinds of shapes, can also be other shapes, and for example: the cross section of cavity is circle and lacks shape and be big top and small bottom the seed crystal 110 for being complementary with it that Fig. 6 d shows.Wherein: circle lacks column, prism-shaped or terrace with edge shape and is more conducive to carry-over moment.And the structure of the upper end of seed rod is for having the structure of seed rod now, for example: ears suspension ring structure.
During this pulling of crystals growing apparatus work, the pulling of crystals growing apparatus being placed single crystal growing furnace 101, is high-purity N in the furnace chamber 102
2Or Ar gas, in crucible chamber 113, be filled with high pure nitrogen or argon gas, also contain As
2, As
4For example, when drawing gallium arsenide, GaAs melt 107 is put into the crucible 116 that the PBN of crucible 105 makes, add boron trioxide sealing melt 106 again, the hot wall sealing cover 103 of refractory ceramics is placed on the plumbago crucible 105, in the groove of dynamic sealing means 104, add boron oxide sealing solvent, simultaneously GaAs melt in the heating crucible 105 and the sealing of the boron oxide in the dynamic sealing means 104 solvent.After the boron oxide fusing, the lower port of hot wall sealing cover 103 is inserted in the boron oxide liquation of groove, form hydraulic seal, because of hot wall sealing cover 103 and seed rod 111 are connected as a single entity, do not need to establish in addition tightness system between the two, promptly can realize the sealing of pulling of crystals growing apparatus by the dynamic sealing means 104 that is located at a place between crucible 105 and the hot wall sealing cover 103.Seed crystal 110 is contacted with silicon melt 107, reverse rotation seed rod 111 and crucible pole 108, thereby drive hot wall sealing cover 103 and crucible 105 intermittently reverse rotation and then realization drawing, by the temperature of adjusting melt and the pulling speed that seed crystal makes progress, crystal is grown up, when the diameter of silicon crystal during near aimed dia, improve pulling speed, make single crystal 109 nearly permanent growths in thickness.Be located at the crack stopper 114 in the groove 1141 of dynamic sealing means 104 simultaneously, overcome existing graphite grazing device is easy to generate crackle when temperature reduces defective.
Claims (10)
1. pulling of crystals growing apparatus, comprise seed rod (111), crucible (105) and be connected in the crucible pole (108) of crucible bottom, it is characterized in that: be provided with the hot wall sealing cover (103) that is used for sealed crucible above the described crucible (105), described hot wall sealing cover (103) and crucible (105) connecting portion are provided with dynamic sealing means (104), and described seed rod (111) passes hot wall sealing cover (103) and stretches in the crucible chamber and be connected as a single entity with hot wall sealing cover (103).
2. pulling of crystals growing apparatus according to claim 1, it is characterized in that: described dynamic sealing means (104) comprises the annular recesses (1051) that is positioned at crucible (105) upper port and is connected as a single entity with crucible (105), be provided with the ring-type crack stopper (114) that a cross section is U font and annular recesses inwall both sides shrink-fit in annular recesses (1051), the cross section that the lower port of described hot wall sealing cover (103) is inserted ring-type crack stopper (114) is in the annular recesses (1141) of U font.
3. according to claim 1,2 one of them described pulling of crystals growing apparatus, it is characterized in that: described seed rod (111) vertically connects the hollow shaft-like of cavity (1111) for having one, and the lower end cavity (1112) that is used for the clamping seed crystal of described seed rod (111) is contraction-like.
4. pulling of crystals growing apparatus according to claim 3 is characterized in that: the lower end cavity (1112) of described seed rod (111) is for falling round table-like or chamfered edge platform shape.
5. pulling of crystals growing apparatus according to claim 4 is characterized in that: the rounding platform of the lower end cavity of described seed rod (111) or the tapering of chamfered edge platform are 30 °-150 °.
6. according to claim 1,2 one of them described pulling of crystals growing apparatus, it is characterized in that: described seed rod (111) vertically connects the hollow shaft-like of cavity (1111) for having one, and the lower end cavity (1112) that described seed rod (111) is used for the clamping seed crystal is the cylindric or prism-shaped of radial dimension less than upper cavity (1111).
7. according to claim 1,2 one of them described pulling of crystals growing apparatus, it is characterized in that: be provided with view port (112) on the top of described hot wall sealing cover (103).
8. pulling of crystals growing apparatus according to claim 3 is characterized in that: be provided with view port (112) on the top of described hot wall sealing cover (103).
9. according to claim 1,2 one of them described pulling of crystals growing apparatus, it is characterized in that: be set with crucible (116) in the described crucible (105).
10. pulling of crystals growing apparatus according to claim 3 is characterized in that: be set with crucible (116) in the described crucible (105).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02285928 CN2576728Y (en) | 2002-11-12 | 2002-11-12 | Straight-drawing mono-crystal generation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02285928 CN2576728Y (en) | 2002-11-12 | 2002-11-12 | Straight-drawing mono-crystal generation device |
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| CN2576728Y true CN2576728Y (en) | 2003-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 02285928 Expired - Fee Related CN2576728Y (en) | 2002-11-12 | 2002-11-12 | Straight-drawing mono-crystal generation device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605420A (en) * | 2012-03-19 | 2012-07-25 | 上海施科特光电材料有限公司 | Full-angle view window of kyropoulos method mono-crystal furnace |
| CN113913920A (en) * | 2021-10-18 | 2022-01-11 | 北京工业大学 | Preparation method and preparation device of AlGaAs single crystal |
-
2002
- 2002-11-12 CN CN 02285928 patent/CN2576728Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605420A (en) * | 2012-03-19 | 2012-07-25 | 上海施科特光电材料有限公司 | Full-angle view window of kyropoulos method mono-crystal furnace |
| CN113913920A (en) * | 2021-10-18 | 2022-01-11 | 北京工业大学 | Preparation method and preparation device of AlGaAs single crystal |
| CN113913920B (en) * | 2021-10-18 | 2024-05-03 | 北京工业大学 | AlGaAs single crystal preparation method and preparation device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DAQING JIA CHANG TECHNOLOGY CO. Free format text: FORMER OWNER: WANG YONGHONG Effective date: 20031031 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20031031 Address after: 163316 industry zone three, Daqing hi tech Development Zone Patentee after: Daqing Jiachang Science and Technology Co., Ltd. Address before: 100074, No. 13, building 1, Yungang South District, Beijing, Fengtai District Patentee before: Wang Yonghong |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20031001 Termination date: 20111112 |