CN2574225Y - 高亮度发光二极管 - Google Patents

高亮度发光二极管 Download PDF

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Publication number
CN2574225Y
CN2574225Y CN02257349U CN02257349U CN2574225Y CN 2574225 Y CN2574225 Y CN 2574225Y CN 02257349 U CN02257349 U CN 02257349U CN 02257349 U CN02257349 U CN 02257349U CN 2574225 Y CN2574225 Y CN 2574225Y
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epoxy resin
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赵叶勤
郭晓维
蒋增钦
王东明
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Golden Valley Optoelectronics Co ltd
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Golden Valley Optoelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型公开了一种高亮度发光二极管，它包括两个电极支架，发光芯片，金属导线和环氧树脂，其特征在于：环氧树脂内嵌设有喇叭状反射镜，利用反射镜将从发光芯片产生的光反射至半功率全角位置，这样便可以充分利用LED发光芯片所产生的光际效应，提高发光轴中心之光强度，使光线充分混光而达到半功率全角下混光均匀的效果。

Description

高亮度发光二极管
技术领域
本实用新型涉及一种发光二极管(LED)，尤指一种高亮度发光二极管。
背景技术
目前市面上所使用的高亮度发光二极管，所发出的光大都为红、黄、蓝绿、蓝及白光等多种。就国内外针对发光二极管研究开发而言，无不针对于芯片的发光效率及白光的封装结构为主要的研发重点，如日本日亚化学公司推出的一种可发白光的发光二极管(日本专利公开号：特平7-99354)，其结构如图1所示，该结构主要是利用荧光粉与树脂混合而形成荧光粉树脂1，将荧光粉树脂涂布在发光的芯片2之上，利用芯片的发光与荧光粉层的能量转换，得到肉眼视觉化的白色发光装置，该装置虽为发光二极管白光结构的发明鼻祖，但对于所发光白光的均匀性控制，及发光半功率全角之控制仍未获得明显改善。根据惠普公司(HP)所发表的《光电子/光纤-光学应用手册》(Optoelectronics/Fiber-Optics ApplicationsManual)，其中于2.1.3节提及光的临界角损失(Critical Angle Loss)，该节解释了光经由密介质(折射率n1)进行传送至疏介质(折射率n2，n1＞n2)时在某特定的临界角(θc)会产生光的全反射，以Snell’s原理：
           n1Sinθ1＝n2Sinθ2其中，n1一般为LED封装用之环氧树脂(n1约为1.53)，n2一般为空气(n2约为1.0)，当θ1＝θc临界角时，光线不会射出环氧树脂外而在环氧树脂内进行全反射效应，此效应称为Fresnel效应。传统式的LED封装无法利用Fresnel效应而造成光的损失，其发光示意图如图2所示，一般业界所指的半功率全角由光线3所形成，而光线4为LED封装的光线损失，光由环氧树脂n1直接折射至空气n2。理想的LED封装结构如图3所示，光线应在环氧树脂内部进行全反射5，再透过曲率6，将光线集中在半功率全角位置7，理想的LED封装结构并无LED封装边际效应的光损失(Side Light Loss)。
发明内容
本实用新型的目的是提供一种可增加光轴亮度，进一步避免发光二极管之光损失效应，具有较好的半功率全角的角度控制能力和混光均匀性的高亮度发光二极管。
为实现上述目的，本实用新型采取以下设计方案：一种高亮度发光二极管，它包括两个电极支架，发光芯片，金属导线和环氧树脂，其特征在于：所述环氧树脂内嵌设有喇叭状反射镜。
所述反射镜由金属或塑胶或透明晶体或各种高分子材料制成。
所述反射镜内层涂布有一反光层。
所述反射镜形状为对称于光轴中心轴的几何形状。
所述反射镜形状为非对称于光轴中心轴的几何形状。
本实用新型的优点是：本实用新型高亮度发光二极管，它包括两个电极支架，发光芯片，金属导线和环氧树脂，环氧树脂内嵌设有喇叭状反射镜，利用反射镜将从发光芯片产生的光反射至半功率全角位置，这样便可以充分利用LED发光芯片所产生的光际效应，提高发光轴中心之光强度，使光线充分混光而达到半功率全角下混光均匀的效果。
附图说明
图1为日亚公司白色发光二极管示意图
图2为传统发光二极管封装后，光线进行及光损失之示意图
图3为理想发光二极管光线进行全反射之示意图
图4为本实用新型高亮度发光二极管结构及光线路径之示意图
图5为本实用新型中反射镜之结构示意图
具体实施方式
如图4、图5所示，本实用新型一种高亮度发光二极管，它包括两个电极支架8，发光芯片9，金属导线10和环氧树脂11，其特征在于：环氧树脂11内嵌设有喇叭状反射镜12，利用反射镜12的反光层15将从发光芯生9产生的光反射至半功率全角位置14，这样便可以充分利用LED发光芯片9所产生的光际效应，提高发光轴中心之光强度，使光线充分混光而达到半功率全角下混光均匀的效果。
反射镜12由金属或塑胶或透明晶体或各种高分子材料制成。
反射镜12内层涂布有一反光层15，以使反光效果更佳。
反射镜12形状为对称于光轴中心轴的几何形状，即反射镜12夹角θ1＝θ2。
反射镜12的形状可因应产品性能要求作成为非对称于光轴中心轴的几何形状，即反射镜12夹角θ1≠2。
在发光二极管运用愈来愈普及及市场对发光二极管发光强度需求愈来愈高以及对发光半功率全角控制要求越来越严谨之下，本实用新型高亮度发光二极管可达到芯片成本较低(光轴中心光强度较高)，发光半功率全角质量较佳的产品性能，并且可以降低产品成本。

Claims (5)

1、一种高亮度发光二极管，它包括两个电极支架，发光芯片，金属导线和环氧树脂，其特征在于：所述环氧树脂内嵌设有喇叭状反射镜。
2、根据权利要求1所述之高亮度发光二极管，其特征在于：所述反射镜由金属或塑胶或透明晶体或各种高分子材料制成。
3、根据权利要求1所述之高亮度发光二极管，其特征在于：所述反射镜内层涂布有一反光层。
4、根据权利要求1或2或3所述之高亮度发光二极管，其特征在于：所述反射镜形状为对称于光轴中心轴的几何形状。
5、根据权利要求1或2或3所述之高亮度发光二极管，其特征在于：所述反射镜形状为非对称于光轴中心轴的几何形状。
CN02257349U 2002-09-18 2002-09-18 高亮度发光二极管 Expired - Lifetime CN2574225Y (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101341601B (zh) * 2005-12-21 2010-05-19 3M创新有限公司 具有径向棱柱式光转向器的led发光体
CN108598250A (zh) * 2018-01-09 2018-09-28 陕西助智信息技术有限公司 一种节电型高亮度扩面防水型led结构以及后期防水方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101341601B (zh) * 2005-12-21 2010-05-19 3M创新有限公司 具有径向棱柱式光转向器的led发光体
CN108598250A (zh) * 2018-01-09 2018-09-28 陕西助智信息技术有限公司 一种节电型高亮度扩面防水型led结构以及后期防水方法
CN108598250B (zh) * 2018-01-09 2020-06-26 林晓玲 一种节电型高亮度扩面防水型led结构以及后期防水方法

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