CN2509714Y - Chip constructional structure - Google Patents

Abstract

A chip packaging structure mainly comprises a carrier, at least a chip, a plurality of welding wires and a protective, wherein the carrier is equipped with a top side, a floor and a passage communicating the top side and the floor, the chip is positioned on the carrier and pushes against one end of the passage, one end of each welding wire is connected to the chip disposed at the end of the passage, and the other end of the welding wire is connected to the carrier disposed at the other end of the passage by an approximately horizontal method, and the protective pushes against one end of the passage, enabling the welding wire positioned at the other end of the passage to be covered by the protective, without being damaged by external forces. Further, the best height from the bottom of the protective to the carrier is 0.4 millimeters.

Description

Crystal wafer assembling structure

Technical field

The utility model is relevant with chip assembly, the more detailed assembling structure that is meant a kind of wafer.

Background technology

Because general integrated circuit (IC) wafer is all very fragile, therefore must outside this wafer, impose suitable structure dress, can guarantee to be difficult in use damaging, and must effectively it electrically be conducted in epigenesist because of the effect of external force; And ad infinitum expand and develop with work science and technology, with regard to the practical application of integrated circuit (IC) wafer, how therefore light, thin, short, the little inexorable trend that has become the structure packing technique, load onto the reduction volume at structure, just becomes the most important problem of industrial circle now.

Therefore; a kind of generation of existing chip assembly 1 is arranged then; as shown in Figure 1; be a wafer 2 to be fixedly arranged on one offered on circuit board 3 one end faces of a passage 3 a; and the weld pad 2a on this wafer 2 just in time is positioned on the end of this circuit board 3 passage 3a; and be connected on the weld pad 2a of this wafer 2 with the one end earlier by the bonding wire 4 of majority; and be placed through again among this passage 3a; and be connected in its other end on the weld pad 3b of these circuit board 3 other ends; and again by a protective 5; 5 '; be covered in this wafer 2 and position respectively on this circuit board 3 weld pad 3b and bonding wire 4 of this passage 3a other end; the passage 3a of this circuit board 3 and the weld pad 3b that is positioned at this passage 3a periphery and bonding wire 4 can be covered fully seal close; and on most circuits 6 that this weld pad 3b is connected; and be coated with an anti-welding lacquer 7; an and pre-position of this circuit 6; be be not subjected to this anti-welding lacquer 7 coating and outside being exposed to; and be provided with most soldered balls 8; and can in order to circuit board 9 gluings in an external world, that is on the position of these circuit board 9 relative these soldered balls 8, be coated with some tin cream 9a and available and these soldered ball 8 gluings.

Only, tie point on this bonding wire 4 and respectively this weld pad 2a, the 3a, be to be unidirectional extension, when the weld pad 3b that causes this bonding wire 4 to be connected in this circuit board 3 goes up, this circuit board 3 must provide the enough height with these bonding wire 4 same bearing of trends, carries out can going after the bending on the weld pad 2a that is connected in this wafer 2 for this bonding wire 4 again; But, because it is excessive that this bonding wire 4 carries out crooked space, to make that this protective 5 ' is being under the situation that weld pad 3b and this bonding wire 4 of this circuit board 3 must be covered fully, this protective 5 ' is all bigger to the height H of 3 of this circuit boards, therefore this circuit board 3 is when electrically connecting with the external world, must utilize a higher interface, also be this soldered ball 6; And the height of this soldered ball 6 is generally about 0.5mm; In other words, existing structure dress utilizes highly bigger soldered ball 6 as the interfaces that electrically connect, and will make the volume of whole structure dress heighten, and can't be in response to the trend of trend now, the step dirt of certainly will trend eliminating.

Because above-mentioned disadvantages, this case creator thinks funiculus through detailed, and accumulates the experience of being engaged in chip assembly manufacturing and research and development for many years, and generation of the present utility model is arranged eventually.

The utility model content

That is main purpose of the present utility model is that a kind of crystal wafer assembling structure is being provided, and is the volume that can reduce whole structure dress.

Edge this, the utility model provides a kind of crystal wafer assembling structure, it consists predominantly of: a carrier, this carrier have the passage that an end face, a bottom surface and are communicated with this end face and this bottom surface; At least one wafer, this wafer are to be arranged on this carrier, and are the ends that envelope props up this passage; Most bonding wires, respectively this bonding wire is to connect with the one end respectively to be positioned on the wafer of this passage one end, the other end then is that the mode with almost horizontal is connected in the position on the carrier of this passage other end; One protective, this protective are that envelope is butted on the other end of this carrier passage, make the bonding wire that is positioned at this passage other end can be subjected to the covering of this protective, and avoiding suffering damage of external force, and this protective bottom to the height of this carrier is a principle to be no more than 0.4mm.

Wherein this protective bottom to height between this carrier is best with 0.08-0.125mm.

Wherein this protective is to be a thin plate, and its width is greater than the distance between this carrier weld pad, and is pressed against by a glue on the weld pad and bonding wire of the passage other end of this carrier and periphery thereof, and can be subjected to the envelope of this thin plate to cover lid.

Wherein this protective is the synthetic resin for similar functions such as Araldite, silicones, be direct involution on the weld pad and bonding wire of this carrier passage other end and periphery thereof, make the covering of locating all can be subjected to this protective that is subjected to involution.

Wherein more clogging in this passage has one second protective, and this second protective is the synthetic resin that has identical or similar functions for Araldite, silicones etc.

Wherein also have a wafer cover body, this wafer cover body is to cover on this carrier, and with this wafer sealing.

Wherein this wafer cover body is by made plates of material such as opaque plastic cement, metal or transparent glass, plastic cement, is to be incorporated on this carrier.

Wherein this wafer cover body is the synthetic resin for similar functions such as Araldite, silicones, is that directly that is overlying on this wafer.

Wherein this wafer cover body also has most protruded stigmas, is the effect that supports as between this carrier and the external world.

Wherein on this carrier and the end face that this bonding wire is connected, also be laid with circuit that is predetermined number and aspect and the weld pad that links to each other with this circuit, this weld pad is to use for this bonding wire connection, and this circuit then is circuit board and its electric connection of using for the external world.

Wherein the width of this protective and area are greatly extremely can fully this weld pad and circuit be finished covering, and on the position of relative this circuit of this protective, have installed at least one perforation, and can be electric connection with the external world by inserting of conducting resinl.

Wherein also install the preferable conduction material of a conductivity in this perforation.

Wherein this carrier is the circuit board for individual layer.

Wherein this carrier is the circuit board for lamination.

Wherein this carrier is the conductive connecting pin for majority.

Description of drawings

For making the auditor can detail knowledge actual configuration of the present utility model and characteristics, enumerate now that following examples and conjunction with figs. describe in detail as after, wherein:

Fig. 1 is a kind of cross-sectional schematic of existing crystal wafer assembling structure;

Fig. 2 is the view sub-anatomy of the utility model first preferred embodiment;

Fig. 3 is a user mode cutaway view embodiment illustrated in fig. 2;

Fig. 4 is the cutaway view of the utility model second preferred embodiment;

Fig. 5 is the cutaway view of the utility model the 3rd preferred embodiment;

Fig. 6 is the cutaway view of the utility model the 4th preferred embodiment;

Fig. 7 is the cutaway view of another enforcement aspect of preferred embodiment shown in Figure 6;

Fig. 8 is the cutaway view of the utility model the 5th preferred embodiment;

Fig. 9 looks face in the end embodiment illustrated in fig. 8, and wherein Wai Jie circuit board is removed in advance;

Figure 10 is the bottom view of the utility model the 6th preferred embodiment;

Figure 11 is the cutaway view of Figure 10 along the 11-11 line;

Figure 12 is the cutaway view of the utility model the 7th preferred embodiment.

Embodiment

Please consulting Fig. 2 and Fig. 3 earlier, is a kind of crystal wafer assembling structure 10 that the utility model first preferred embodiment is provided, and it consists predominantly of bonding wire 13, a wafer cover body 14 and a protective 15 of a carrier 11, at least one wafer 12, majority; Wherein,

This carrier 11 is to can be plastic cement, reinforced plastic, glass fibre or pottery ... the circuit board made etc. material (Printed Circuit Board, PCB); This carrier 11 has a bottom surface 11a and and is positioned at the end face 11e that this bottom surface 11a tosses about, this bottom surface 11a is laid with and is predetermined number and the circuit 11b of aspect and the weld pad 11c that links to each other with this circuit 11b, and this carrier 11 is formed with a logical passage 11f who passes through this bottom surface 11a and this end face 11e, and on the circuit 11b of this bottom surface 11a, be coated with one the insulation anti-welding lacquer 11d, to avoid this circuit 11b to suffer damage of external force, and the pre-position on this circuit 11b is not to be coated with anti-welding lacquer, this circuit 11b pre-position can be exposed, electrically conduct (in this special instruction and can be with the external world, wherein this circuit board is to can be individual layer or lamination, and be to reach graphic simplification, be only to represent in the present embodiment with individual layer).

This wafer 12 is (in this explanation, for reaching illustrated simplification, be to represent in the present embodiment) with single wafer, be by Araldite, silicones, low-melting glass or two-sided tape ... etc. stickiness material 12a, on the directly adhesive end face 11e that is fixed in this carrier 11, and on the end face of this wafer 12 and this 11a the same side, carrier 11 bottom surface, be provided with the weld pad 12b that is predetermined quantity and aspect, and these weld pads 12b is right against this passage 11f.

These bonding wires 13, be made by conducting metal materials such as gold or aluminium, be to utilize the routing technology earlier these bonding wire 13 1 ends to be connected with the weld pad 12b of this wafer 12, again its other end then is electric connection with the connected mode of almost horizontal and the weld pad 11c of this carrier 11 bottom surface 11a, the mode that feasible respectively this bonding wire 13 extends with almost horizontal outside this passage 11f is connected in the weld pad 11c on this carrier 11 bottom surface 11a; In other words, can lower the height that bonding wire 13 protrudes in this carrier 11 bottom surface 11a in a large number.

This wafer cover body 14 is that it has an end face 14a and a bottom surface 14b by made cover caps of material such as opaque plastic cement, metal or transparent glass, plastic cement, and from this bottom surface 14b central position depression and form a room (figure does not show) upwards; This bottom surface 14b is incorporated on the end face 11e of this carrier 11 by an adhesive thing (figure does not show), and makes this wafer 12 can be arranged in this room, can not be subjected to the pollution of outside destroy or foreign material with the wafer 12 of guard bit in this room.

This protective 15 is to be a thin plate in present embodiment, and this gauge of sheet is minimum, its width then is greater than the distance between this carrier 11 weld pad 11c, as shown in Figure 2, and paste on the bottom surface 11a that is butted on this carrier 11 by a glue 15a, and weld pad 11c, this passage 11f and this bonding wire 13 on this carrier 11 bottom surface 11a all are subjected to the envelope of this thin plate to cover the polluter that Gai Erke avoids directly being subjected to damage of external force or foreign material; As shown in Figure 3; height H after this thin plate 15 covers simultaneously ' be principle to be no more than 0.4mm; and with 0.08-0.125mm is best (in this special instruction; because the height of general tin cream is to be 0.15mm; as the height after this thin plate covers in the present embodiment; be when 0.08-0.125mm, this tin cream can be directly contacted and adhesive with this carrier, and can not interfere to some extent) with this protective.

As shown in Figure 3, in this, when this crystal wafer assembling structure 10 is desired to be assembled on the circuit board 16 in an external world, be with respect to circuit 11b place coating one conducting resinl that exposes on this circuit board 16, this conducting resinl is to be two tin cream 16a in present embodiment, and by cohering by the bottom surface 11a circuit 11b of this tin cream 168 with this carrier 11, and can by this tin cream 16a with this wafer 12 by 13 conductings of bonding wire electrically, conducting is on the circuit board 16 in the external world again, and because this thin plate to the cover height of this carrier 11 is less than 0.4mm (that is being lower than ball height 0.5mm), and can make when assembling is used, highly higher soldered ball need be set as the interface that electrically connects, and can directly link with tin cream 16, therefore, can significantly reduce the program and the volume of its structure dress.

Seeing also Fig. 4, is a kind of crystal wafer assembling structure 20 that the utility model second preferred embodiment is provided, this structure 20 bonding wire 24 and protective 25 with a carrier 21, at least one wafer 22, a wafer cover body 23, majority same as the previously described embodiments substantially; The main difference of itself and the foregoing description is:

This carrier 21 is to be a plate, has a bottom surface 211, an end face 212 and a logical passage 213 that passes through this end, end face 211,212;

This wafer 22 is directly adhesive and be fixed on the end face 212 of this carrier 21;

This wafer cover body 23 is the synthetic resin that has identical or similar functions for Araldite, silicones etc., is directly to be coated on this wafer 22, makes this wafer 22 can be subjected to the protection of this cover body 23;

This protective 25 is to be Araldite; the synthetic resin of similar functions such as silicones; be direct involution in these carrier 21 passages 213 and be positioned on weld pad 214 and the bonding wire 24 on this bottom surface 211; make the covering of locating all can be subjected to this protective 25 that is subjected to involution; and avoid directly being subjected to the polluter of damage of external force or foreign material; and, this bonding wire 24 is connected with the weld pad 214 of these carrier 21 bottom surfaces 211 because being modes with almost horizontal; convexedly stretch in height on these carrier 21 bottom surfaces 211 and can reduce this bonding wire 24, and then the height of this protective 25 after assembling can significantly be reduced to below the 0.4mm.

Seeing also Fig. 5, is a kind of crystal wafer assembling structure 30 that the utility model the 3rd preferred embodiment is provided, and this structure 30 has the bonding wire 34 and a protective 35 of a carrier 31, at least one wafer 32, a wafer cover body 33, majority equally; The main difference of itself and the foregoing description is:

Wherein this protective 35 is to be a thin plate;

More clog in the passage 314 of this carrier 31 one second protective 36 is arranged; this second protective 36 is the synthetic resin for similar functions such as Araldite, silicones, can make the bonding wire 34 that is arranged in this passage 314 and lay respectively at wafer 32 weld pads 321 at these passage 314 two ends and the protection that carrier 31 weld pads 315 are subjected to this second protective 36.

Seeing also Fig. 6, is a kind of crystal wafer assembling structure 40 that the utility model the 4th preferred embodiment is provided, and this structure 40 has the bonding wire 44 and a protective 45 of a carrier 41, at least one wafer 42, a wafer cover body 43, majority equally; The main difference of itself and the foregoing description is:

Wherein, this protective 45 is to be a thin plate, and the width of this protective 45 and area are all greater than the area of the width of 411 of the circuit of being laid on this carrier 41 412 and weld pads, this protective 45 can be covered the circuit 41 on this carrier 41 and weld pad 411 fully to be close to, and in a pre-position of these protective 45 relative these circuits 412, be provided with at least one perforation 451 that is communicated to these circuit 412 places, when making on the circuit board 46 of desiring to be connected in an external world, can be by a conducting resinl tin cream, 461 are placed in this perforation 451, and distinguish gluing on this circuit 412 and this circuit board 46, and can be with electrically conducting on this circuit board 46 on this circuit 412; Can make that thus this protective 45 not only can be in order to protect the weld pad 411 on this carrier 41, influence or destruction that more can and then protect the circuit 412 on this carrier 41 to avoid being subjected to external force.

In this special instruction, when adorning, can on these carrier 41 circuits 412, be coated with and be afraid of the anti-welding lacquer (not shown) of one deck owing to general structure, be subjected to damage of external force to avoid this circuit 412; And when being covered on this circuit 412 with above-mentioned larger area protective 45, then can reach in order to avoid this circuit 412 to be subjected to the effect of outside destroy, can save the anti-welding program that is coated with of coating, and then reduce the cost on making.

See also Fig. 7, be illustrated especially at the 4th preferred embodiment at this, wherein, also can on this protective 45, two perforations 451 ' be set, 452, and be stage casing and the back segment place that is arranged in this protective 45 respectively, and in respectively this perforation 451 ' of this protective 45, in 452, in advance with the mode of electroplating or spray conduction material 47 as gold that a conductivity is preferable, silver, tin, one in the materials such as lead, be arranged in the perforation 451 ' of this protective 45 respectively, in 452, and cohere (shown in Fig. 7 A) by the circuit 412 of this conduction material 47 and this carrier 41, and can increase its conductivity effect, when avoiding list to contact with this circuit 412 with tin cream, have contact or adhesive bad situation and take place, and then influence its conductivity; And because this conduction material 47 is embedded in this perforation respectively 451 ', 452 the degree of depth, do not protrude from outside this perforation 451,452, and can be again be bonded in 46 of this conduction material 47 and extraneous circuit boards by this tin cream 461, make the unlikely increase to some extent of volume of 41 in extraneous circuit board 46 and this carrier, under the purpose that the whole packaging housing of also unlikely influence amasss, more can reach the effect that increases its conductivity.

Seeing also Fig. 8 and Fig. 9, is a kind of crystal wafer assembling structure 50 that the utility model the 5th preferred embodiment is provided, and this structure 50 has the bonding wire 54 and a protective 55 of a carrier 51, at least one wafer 52, a wafer cover body 53, majority equally; The main difference of itself and the foregoing description is:

Wherein, this carrier 51 is made up of the made multi-conducting pin of metal in the utility model, is available for these wafer 52 bearings and electrically leading in epigenesist this wafer 52; And this protective 55 is to be a thin plate.

Seeing also Figure 10 and Figure 11, is a kind of crystal wafer assembling structure 60 that the utility model the 6th preferred embodiment is provided, and this structure 60 has the bonding wire 64 and a protective 65 of a carrier 61, at least one wafer 62, a wafer cover body 63, majority equally; The main difference of itself and the foregoing description is:

This wafer cover body 63 has more a plurality of integrally formed protruded stigmas 631, is the periphery that is positioned at this carrier 61, and is to protrude from approximately slightly 0.4mm of these carrier 61 bottom surfaces 611;

In this explanation, in the time of can making that by these protruded stigmas 631 circuit board 66 in this carrier 61 and an external world is done to cohere, 66 effect persons of this carrier 61 and this circuit board with location; In other words, promptly be can be when cohering with this circuit board 66 by a glue 67 at this carrier 61, if there have the cooling that its glue 67 takes place to shrink to be uneven, and when making these carrier 61 1 ends relatively this circuit board 66 sticking up the state of high displacement, can slightly contact by these protruded stigmas 631 with this circuit board 66, and the effect that supports slightly and locate is arranged, with avoid between the two to stick up high displacement excessive.

Seeing also Figure 12, is a kind of crystal wafer assembling structure 70 that the utility model the 7th preferred embodiment is provided, and this structure 70 has the bonding wire 74 and a protective 55 of a carrier 71, at least one wafer 72, a wafer cover body 73, majority equally; The main difference of itself and the foregoing description is:

Wherein, this carrier 51 is to be the made conductive connecting pin of most metals; 75 of this protectives are the synthetic resin for similar functions such as Araldite, silicones.

In sum, the utility model crystal wafer assembling structure, really has the long-pending advantage of the whole packaging housing of reduction, its progressive practicality of real tool, and convenience in the use, again, the utility model there is no identical items and sees publication or public use before application, be with, the utility model real oneself possess patent requirement, so file an application in accordance with the law.

Claims (15)

1. crystal wafer assembling structure is characterized in that it consists predominantly of:

One carrier, this carrier have the passage of an end face, a bottom surface and this end face of connection and this bottom surface;

At least one wafer, this wafer are to be arranged on this carrier, and are the ends that envelope props up this passage;

Most bonding wires, respectively this bonding wire is to connect with the one end respectively to be positioned on the wafer of this passage one end, the other end then is that the mode with almost horizontal is connected in the position on the carrier of this passage other end;

One protective, this protective are that envelope is butted on the other end of this carrier passage, make the bonding wire that is positioned at this passage other end can be subjected to the covering of this protective, and this protective bottom to the height of this carrier is a principle to be no more than 0.4mm.

2. according to the described crystal wafer assembling structure of claim 1, it is characterized in that wherein this protective bottom to height between this carrier is best with 0.08-0.125mm.

3. according to the described crystal wafer assembling structure of claim 1; it is characterized in that; wherein this protective is to be a thin plate; its width is greater than the distance between this carrier weld pad; and be pressed against by a glue on the weld pad and bonding wire of the passage other end of this carrier and periphery thereof, and can be subjected to the envelope of this thin plate to cover lid.

4. according to the described crystal wafer assembling structure of claim 1; it is characterized in that; wherein this protective is the synthetic resin for similar functions such as Araldite, silicones; be direct involution on the weld pad and bonding wire of this carrier passage other end and periphery thereof, make the covering of locating all can be subjected to this protective that is subjected to involution.

5. according to the described crystal wafer assembling structure of claim 3, it is characterized in that wherein more clogging in this passage has one second protective, this second protective is the synthetic resin that has identical or similar functions for Araldite, silicones etc.

6. according to the described crystal wafer assembling structure of claim 1, it is characterized in that wherein also having a wafer cover body, this wafer cover body is to cover on this carrier, and with this wafer sealing.

7. according to the described crystal wafer assembling structure of claim 6, it is characterized in that wherein this wafer cover body is by made plates of material such as opaque plastic cement, metal or transparent glass, plastic cement, is to be incorporated on this carrier.

8. according to the described crystal wafer assembling structure of claim 6, it is characterized in that wherein this wafer cover body is the synthetic resin for similar functions such as Araldite, silicones, is that directly that is overlying on this wafer.

9. according to the described crystal wafer assembling structure of claim 6, it is characterized in that wherein this wafer cover body also has most protruded stigmas, is the effect that supports as between this carrier and the external world.

10. according to the described crystal wafer assembling structure of claim 1, it is characterized in that, wherein on this carrier and the end face that this bonding wire is connected, also be laid with and be predetermined number and the circuit of aspect and the weld pad that links to each other with this circuit, this weld pad is to use for this bonding wire to connect, and this circuit then is circuit board and its electric connection of using for the external world.

11. according to the described crystal wafer assembling structure of claim 9; it is characterized in that; wherein the width of this protective and area are big to can fully this weld pad and circuit being finished covering; and on the position of relative this circuit of this protective; installed at least one perforation, and can be electric connection with the external world by inserting of conducting resinl.

12. according to the described crystal wafer assembling structure of claim 10, it is characterized in that, wherein also install the preferable conduction material of a conductivity in this perforation.

13., it is characterized in that wherein this carrier is the circuit board for individual layer according to the described crystal wafer assembling structure of claim 1.

14., it is characterized in that wherein this carrier is the circuit board for lamination according to the described crystal wafer assembling structure of claim 1.

15., it is characterized in that wherein this carrier is the conductive connecting pin for majority according to the described crystal wafer assembling structure of claim 1.

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