CN2452133Y - Ohmic electrode for Te Zn Cd semiconductor material - Google Patents
Ohmic electrode for Te Zn Cd semiconductor material Download PDFInfo
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- CN2452133Y CN2452133Y CN 00249702 CN00249702U CN2452133Y CN 2452133 Y CN2452133 Y CN 2452133Y CN 00249702 CN00249702 CN 00249702 CN 00249702 U CN00249702 U CN 00249702U CN 2452133 Y CN2452133 Y CN 2452133Y
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Abstract
The utility model relates to an ohmic electrode for a Te Zn Cd semiconductor material, which comprises a Te Zn Cd material, a metal electrode layer and an electrode leading wire. The utility model is characterized in that the electrode layer is a composite metal layer which is composed of a copper-silver layer and a gold layer. Because the copper of the copper-silver layer can easily match with the Cd Zn Te to form the ohmic contact, the good adhesive force can be formed between the silver and the Cd Zn Te; thus, the copper-silver layer is used as the first layer metal layer which is contacted with the Cd Zn Te; so the adhesive force between the ohmic electrode and the Cd Zn Te is strong. The utility model has the advantages that the utility model can be easily controlled because the electricity of the utility model is small, the repeatability is good, an I-V curve which is measured by the utility model can have the good linearity, and the ratio contact resistance is 2.0 * 10 <-3 > ohm cm < 2 >.
Description
The utility model relates to a kind of tellurium zinc cadmium (CdZnTe) semi-conducting material Ohmic electrode, and it is mainly used in the measurement and the research of CdZnTe semi-conducting material electrical parameter.
When analyzing semiconductor material electric property, on semi-conducting material, prepare an Ohm contact electrode usually, semi-conducting material is carried out the measurement of electrical parameter by Ohm contact electrode.The preparation of the Ohmic electrode of CdZnTe material is general adopts gold trichloride solution and CdZnTe reaction to form formation electrode layers such as electrode layer or vacuum evaporation gold or platinum, and then through annealing in process, measured current-voltage (I-V) curve is generally straight line or near straight line.Wherein, the former is a chemical reaction method, the size of convenient but wayward electrode, shape, uniformity, stability etc.; Selected gold of the latter or platinum etc., and the adhesive force between the CdZnTe material is less than normal, and metal level comes off easily, has influence on actual application.
The purpose of this utility model provides a kind of and CdZnTe material strong adhesion, electrode size may command, and the Ohmic electrode of good reproducibility makes measured I-V curve have favorable linearity.
The purpose of this utility model is achieved in that is putting an electrode layer on the CdZnTe material, this electrode layer is one deck complex metal layer, is made up of copper-silver layer and gold layer.Put indium pellet then thereon, contact conductor is connected with electrode layer, form an Ohmic electrode by hot pressing.Because electrode layer adopts complex metal layer, copper in copper-silver layer, silver often can occupy the Cd position in the semi-conducting material of Cd-Te system, form the shallow acceptor energy level in the forbidden band, increase the carrier concentration of nearly surf zone, thereby make the acquisition ohmic contact become possibility.Between copper and silver, copper is easier to form ohmic contact with CdZnTe, silver then and adhesive force preferably arranged between the CdZnTe, adopt copper-Yin conduct and the contacted metal level of CdZnTe, make Ohmic electrode and CdZnTe strong adhesion, electrode size may command, good reproducibility, measured I-V curve has favorable linearity, and specific contact resistivity is little.
Description of drawings of the present utility model is as follows:
Fig. 1 is the ohmic contact electrode structure schematic diagram of tellurium zinc cadmium semi-conducting material;
Fig. 2 is the Ohm contact electrode actual measurement I-V curve chart of tellurium zinc cadmium semi-conducting material; Mouthful curve chart that promptly records after preparing for Ohm contact electrode, ▲ the I-V curve chart that recorded in 35 days deposited after preparing for Ohm contact electrode.
Below in conjunction with accompanying drawing embodiment of the present utility model is elaborated:
1.CdZnTe the surface treatment of material:
A. to the surperficial mechanical polishing of material (1), throw, clean up the back and prepare corrosion to surface-brightening such as mirror;
B. chemical corrosion:, use the solution corrosion 100 seconds of 2% bromine+20% lactic acid+ethylene glycol more earlier through 5% bromine methanol solution corrosion 100 seconds.For making the corrosion sample surfaces smooth, even, should slowly rock solution or sample in the corrosion process.
2. electrode preparation:
Non-electrode district is carried out mask protection, clean is carried out on the electrode district surface, in high vacuum (＜1 * 10
-3Pa) under the condition, adopt the Ar of 200eV, line 10A
+Lip-deep oxide layer and various pollutant are removed in ion bombardment 40 seconds.Be coated with electrode layer (2) at the electrode district surface vacuum then, adopt 800eV, the Ar of line 100A
+Ion bombards copper-Yin (2% percentage by weight) and gold target successively, forms copper-silver layer (201) and gold (202) layer, and thickness respectively is 1 μ m.After electrode layer (2) is coated with, through floating glue, cleaning, in high-purity N
2Under the atmosphere, under 250 ℃ of temperature, annealed 25 minutes.Put indium pellet (3) at last thereon, contact conductor (4) is connected with electrode layer, form an Ohmic electrode by hot pressing.
The utlity model has following advantage:
1. because electrode layer selects copper-Yin as the first layer metal layer that contacts with CdZnTe, copper Easier and CdZnTe form Ohmic contact, and silver then and have preferably between the CdZnTe and adhere to Power adopts copper-Yin conduct and the contacted metal level of CdZnTe, makes the Ohmic electrode strong adhesion, Good reproducibility.
2. Ohmic electrode of the present utility model is good through the linearity of actual measurement I-V curve, and the electrode specific contact resistivity that is obtained is 2.0 * 10
-3Ω cm
2
Claims (2)
1. a tellurium zinc cadmium semi-conducting material Ohmic electrode comprises tellurium zinc cadmium semi-conducting material (1), goes up electrode evaporation layer (2) at semi-conducting material (1), and contact conductor (4) is connected with electrode layer (2) electricity by indium pellet (3), it is characterized in that:
Said electrode layer (2) is one deck complex metal layer, is made up of copper-silver layer (201) and gold layer (202).
2. according to claim 1 tellurium zinc cadmium semi-conducting material Ohmic electrode, it is characterized in that: said copper-silver layer (201) is that copper-Yin (2% percentage by weight) forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00249702 CN2452133Y (en) | 2000-10-19 | 2000-10-19 | Ohmic electrode for Te Zn Cd semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00249702 CN2452133Y (en) | 2000-10-19 | 2000-10-19 | Ohmic electrode for Te Zn Cd semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2452133Y true CN2452133Y (en) | 2001-10-03 |
Family
ID=33608087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00249702 Expired - Fee Related CN2452133Y (en) | 2000-10-19 | 2000-10-19 | Ohmic electrode for Te Zn Cd semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2452133Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320616C (en) * | 2004-12-02 | 2007-06-06 | 上海大学 | Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer |
| CN102683490A (en) * | 2012-05-09 | 2012-09-19 | 上海大学 | Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal |
| CN103117298A (en) * | 2011-11-17 | 2013-05-22 | 中国科学院物理研究所 | Ohmic electrode structure of silicon carbide and manufacturing method thereof |
| CN103531662A (en) * | 2013-10-24 | 2014-01-22 | 上海大学 | Preparation method of ohm structure device having CdMnTe crystals grown with THM (traveling heater method) |
| CN110299287A (en) * | 2019-06-24 | 2019-10-01 | 上海大学 | The processing of surface polishing method of tellurium zincium vestalium thin-film |
| WO2022033222A1 (en) * | 2020-12-01 | 2022-02-17 | 上海大学 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method therefor |
-
2000
- 2000-10-19 CN CN 00249702 patent/CN2452133Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320616C (en) * | 2004-12-02 | 2007-06-06 | 上海大学 | Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer |
| CN103117298A (en) * | 2011-11-17 | 2013-05-22 | 中国科学院物理研究所 | Ohmic electrode structure of silicon carbide and manufacturing method thereof |
| CN102683490A (en) * | 2012-05-09 | 2012-09-19 | 上海大学 | Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal |
| CN103531662A (en) * | 2013-10-24 | 2014-01-22 | 上海大学 | Preparation method of ohm structure device having CdMnTe crystals grown with THM (traveling heater method) |
| CN110299287A (en) * | 2019-06-24 | 2019-10-01 | 上海大学 | The processing of surface polishing method of tellurium zincium vestalium thin-film |
| WO2022033222A1 (en) * | 2020-12-01 | 2022-02-17 | 上海大学 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |