CN102683490A - Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal - Google Patents
Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal Download PDFInfo
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- CN102683490A CN102683490A CN2012101404906A CN201210140490A CN102683490A CN 102683490 A CN102683490 A CN 102683490A CN 2012101404906 A CN2012101404906 A CN 2012101404906A CN 201210140490 A CN201210140490 A CN 201210140490A CN 102683490 A CN102683490 A CN 102683490A
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Abstract
The invention relates to a process method for preparing an In heavily-doped formed Au/In ohmic contact electrode on a surface of a detector-grade CdZnTe (CZT) crystal, which is applied to the technical field of a CZT detector preparation process. The process method comprises the following steps of: preparing one layer of In electrode on the surface of the CZT crystal by a magnetron sputtering method; preparing one layer of Au electrode; and carrying out high-temperature annealing after the crystal is packaged. A layer of thinner In heavily-doped region is formed on the surface of the CZT so that the width of a depletion region of a metal-semiconductor contact region becomes very thin and tunnel current is easy to form. Compared with the traditional single Au electrode, the ohmic contact performance of metal and a semiconductor can be better improved.
Description
Technical field
The present invention relates to detector grade CdZnTe (CZT) material surface and adopt In heavy doping method to prepare the process of ohmic contact characteristic electrode, be applied in CZT detector fabricating technology field.
Background technology
Cd
L-xZn
xTe (CZT) crystal has the excellent photoelectric performance, be to make room temperature X ray and the ideal semi-conducting material of gamma-ray detector so far, so the raising of the performance of CZT nuclear radiation detector is the key of research always.The factor that influences the CZT detector performance has a lot, and wherein the performance of contact electrode also is the focus that people study always, because it can influence the performance of device to a great extent.Both made employed material property good, but the suitable contact electrode of neither one will cause device performance obviously to descend.For highly resistant material; If it is few to be prepared into the surface recombination center to electrode design; And has an electrode of good ohmic contact characteristic; Then can improve the response speed of detector significantly, and the electrical performance testing of highly resistant material also be unable to do without Ohm contact electrode, the electrode that therefore how to obtain to form with highly resistant material good ohmic contact characteristic is the key of research.Adopt the Au/In combination electrode can improve this problem of unitary electrode ohmic contact difference preferably, can produce significant tunnel current when heavily doped semiconductor and Metal Contact, thereby obtain ohmic contact.Before CZT crystal face table deposition Au electrode, prepare one deck In electrode earlier; Make the CZT surface form the heavily doped layer of In through high-temperature heat treatment; Then gold-semiconductor contact district barrier region width becomes very thin, and electronics runs through potential barrier through tunnel effect and produces sizable tunnel current, even surpasses thermoelectronic emission current and become the main component of electric current; This moment, contact resistance can be very little, can form good Ohmic contact.
Summary of the invention
The present invention seeks to propose a kind of method for preparing Ohm contact electrode at the CZT plane of crystal through the heavily doped method of In; The electrode of this method preparation can be used in the CZT device preparing process, also can be used as crystal property is carried out the extraction electrode that electrical parameter is measured.
A kind of method at the heavily doped Au/In Ohm contact electrode of tellurium-zincium-cadmium crystal surface preparation In of the present invention is characterized in that having following technical process and step:
A. at first abacus emery powder and particle diameter of water is that the corundum powder polishing fluid of 0.3 μ m grinds the wafer of CZT (111) direction successively, throw to surfacing, no marking and wire drawing with the corundum powder polishing fluid hand of 0.05 μ m at last, after the ultrasonic cleaning at N
2The atmosphere air dried; The chip surface after polishing light, the zero defect damage, interference microscope is observed down, and surface fringe is thin and straight.The employing component is 5%Br
2+ methyl alcohol (BM) and 2%Br
2Tellurium zinc cadmium (CZT) wafer of the corrosive liquid of+20% lactic acid+ethylene glycol (LB) after to polishing carries out chemical surface treatment, and the time is 2 minutes, and to the wafer of accomplishing corrosion in methyl alcohol rinse to remove the remaining Br in surface
2
B. use magnetron sputtering method, vacuum degree is 10
-3Pa, temperature is under 200 ℃ of conditions, sputtering time is 15min-45min; At the In electrode of CZT surface sputtering one layer thickness in 0.05 μ m-0.2 mu m range; And then prepare the Au electrode of a layer thickness in 0.2 μ m-1.0 mu m range; To carrying out the annealing in 300 ℃ ~ 550 ℃ scopes of high temperature after the crystal package, make the CZT surface form the In heavily doped region of thin (1nm-10nm) of one deck; The heavily doped Au/In Ohm contact electrode of final preparation In.
Characteristics of the present invention are before CZT crystal face table prepares the Au electrode, to prepare one deck In electrode earlier; Then crystal is done high annealing after with epoxy encapsulation; Make the CZT surface form the thin In heavily doped region of one deck through thermal diffusion; Make gold-semiconductor contact district barrier region width become very thin, form tunnel current easily, thereby improve ohm contact performance.
Description of drawings
Fig. 1 Au/In-contact electrode structure sketch map.
Fig. 2 is the I-V characteristic curve of CZT detector under Au electrode and the Au/In combination electrode, and wherein the Au/In combination electrode has passed through 400 ℃ high annealing.
Embodiment
After specific embodiment of the present invention being described at present.
Embodiment: concrete preparation process and step in the present embodiment are described below:
Adopt magnetron sputtering method to CZT sample preparation Au/In combination electrode, its structure is with reference to figure Fig. 1, specifically technical process
A. at first abacus emery powder and particle diameter of water is that the corundum powder polishing fluid of 0.3 μ m grinds the wafer of CZT (111) direction successively, throw to surfacing, no marking and wire drawing with the corundum powder polishing fluid hand of 0.05 μ m at last, after the ultrasonic cleaning at N
2The atmosphere air dried; The chip surface after polishing light, the zero defect damage, interference microscope is observed down, and surface fringe is thin and straight.The employing component is 5%Br
2+ methyl alcohol (BM) and 2%Br
2Tellurium zinc cadmium (CZT) wafer of the corrosive liquid of+20% lactic acid+ethylene glycol (LB) after to polishing carries out chemical surface treatment, and the time is 2 minutes, and to the wafer of accomplishing corrosion in methyl alcohol rinse to remove the remaining Br in surface
2
B. use magnetron sputtering method, vacuum degree is 10
-3Pa, temperature is under 200 ℃ of conditions, sputtering time is 15min-45min; At the In electrode of CZT surface sputtering one layer thickness in 0.05 μ m-0.2 mu m range; And then prepare the Au electrode of a layer thickness in 0.2 μ m-1.0 mu m range; To carrying out the annealing in 300 ℃ ~ 550 ℃ scopes of high temperature after the crystal package, make the CZT surface form the In heavily doped region of thin (1nm-10nm) of one deck; The heavily doped Au/In Ohm contact electrode of final preparation In.(referring to Fig. 1)
Comparative test
The comparative test example
1. at first abacus emery powder and particle diameter of water is that the corundum powder polishing fluid of 0.3 μ m grinds the wafer of CZT (111) direction successively, throw to surfacing, no marking and wire drawing with the corundum powder polishing fluid hand of 0.05 μ m at last, after the ultrasonic cleaning at N
2The atmosphere air dried.The chip surface after polishing light, the zero defect damage, interference microscope is observed down, and surface fringe is thin and straight.The employing component is 5%Br
2+ methyl alcohol (BM) and 2%Br
2The CZT wafer of the corrosive liquid of+20% lactic acid+ethylene glycol (LB) after to polishing carries out chemical surface treatment, and the time is 2 minutes, and to the wafer of accomplishing corrosion in methyl alcohol rinse to remove the remaining Br in surface
2
2. sample is divided into A, B, uses magnetron sputtering method, vacuum degree is 10
-3Pa, temperature is at 200 ℃.Successively deposit the In of one deck 0.05 μ m and the Au of one deck 0.5 μ m at B sample CZT plane of crystal, and the Au electrode of the CZT plane of crystal of A sample sputter one deck 0.5 μ m.
3.A, the electrode of B sample all uses and draws, and only B sample CZT crystal done 400 ℃ high annealing with epoxy encapsulation, annealing time is 15 minutes.
4. respectively sample A, B are carried out electrical performance testing at last.Fig. 2 is respectively the I-V characteristic curve of A, B sample.
5. the I-V curve among Fig. 2 is pressed I (V)=aV
bForm carry out nonlinear fitting, come further to confirm the ohm property of these two kinds of electrodes, fitting result is as shown in table 1.In conjunction with I-V curve chart and fitting result, can find out that the fitting coefficient of Au/In-CZT more approaches 1 than Au-CZT, the visible Au/In combination electrode that adopts forms ohmic contact more easily, therefore adopts the Au/In combination electrode can obtain ohmic contact preferably.
The fitted results of table 1. I-V curve
| Sample | Au | Au/In |
| The ohm line property coefficient b | 1.121 | 1.105 |
Claims (1)
1. method at the heavily doped Au/In Ohm contact electrode of tellurium-zincium-cadmium crystal surface preparation In is characterized in that having following technical process and step:
A. at first abacus emery powder and particle diameter of water is that the corundum powder polishing fluid of 0.3 μ m grinds the wafer of CZT (111) direction successively, throw to surfacing, no marking and wire drawing with the corundum powder polishing fluid hand of 0.05 μ m at last, after the ultrasonic cleaning at N
2The atmosphere air dried; The chip surface after polishing light, the zero defect damage, interference microscope is observed down, and surface fringe is thin and straight; The employing component is 5%Br
2+ methyl alcohol (BM) and 2%Br
2Tellurium zinc cadmium (CZT) wafer of the corrosive liquid of+20% lactic acid+ethylene glycol (LB) after to polishing carries out chemical surface treatment, and the time is 2 minutes, and to the wafer of accomplishing corrosion in methyl alcohol rinse to remove the remaining Br in surface
2
B. use magnetron sputtering method, vacuum degree is 10
-3Pa, temperature is under 200 ℃ of conditions, sputtering time is 15min-45min; At the In electrode of CZT surface sputtering one layer thickness in 0.05 μ m-0.2 mu m range; And then prepare the Au electrode of a layer thickness in 0.2 μ m-1.0 mu m range; To carrying out the annealing in 300 ℃ ~ 550 ℃ scopes of high temperature after the crystal package, make the CZT surface form the In heavily doped region of thin (1nm-10nm) of one deck; The heavily doped Au/In Ohm contact electrode of final preparation In.
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| CN2012101404906A CN102683490A (en) | 2012-05-09 | 2012-05-09 | Method for preparing In heavily-doped Au/In ohmic contact electrode on surface of cadmium zinc telluride crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950504A (en) * | 2018-08-03 | 2018-12-07 | 江苏环奥金属材料科技有限公司 | A kind of alloy target material and preparation method thereof forming Ohmic contact on N-type compound semiconductor materials surface |
| CN112436062A (en) * | 2020-12-01 | 2021-03-02 | 上海大学 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2452133Y (en) * | 2000-10-19 | 2001-10-03 | 中国科学院上海技术物理研究所 | Ohmic electrode for Te Zn Cd semiconductor material |
| CN1648688A (en) * | 2005-01-26 | 2005-08-03 | 上海大学 | Method for preparing coplanar grid anode tellurium-zinc-cadmium detector |
| CN101459207A (en) * | 2009-01-04 | 2009-06-17 | 上海大学 | Manufacturing process for Au/Cr-CZT combination electrode |
| CN101720490A (en) * | 2007-06-29 | 2010-06-02 | 皇家飞利浦电子股份有限公司 | Electrical contact for a cadmium tellurium component |
| US20120045868A1 (en) * | 2009-05-19 | 2012-02-23 | Durham Scientific Crystals Limited | Semiconductor device contacts |
-
2012
- 2012-05-09 CN CN2012101404906A patent/CN102683490A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2452133Y (en) * | 2000-10-19 | 2001-10-03 | 中国科学院上海技术物理研究所 | Ohmic electrode for Te Zn Cd semiconductor material |
| CN1648688A (en) * | 2005-01-26 | 2005-08-03 | 上海大学 | Method for preparing coplanar grid anode tellurium-zinc-cadmium detector |
| CN101720490A (en) * | 2007-06-29 | 2010-06-02 | 皇家飞利浦电子股份有限公司 | Electrical contact for a cadmium tellurium component |
| CN101459207A (en) * | 2009-01-04 | 2009-06-17 | 上海大学 | Manufacturing process for Au/Cr-CZT combination electrode |
| US20120045868A1 (en) * | 2009-05-19 | 2012-02-23 | Durham Scientific Crystals Limited | Semiconductor device contacts |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950504A (en) * | 2018-08-03 | 2018-12-07 | 江苏环奥金属材料科技有限公司 | A kind of alloy target material and preparation method thereof forming Ohmic contact on N-type compound semiconductor materials surface |
| CN112436062A (en) * | 2020-12-01 | 2021-03-02 | 上海大学 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method thereof |
| WO2022033222A1 (en) * | 2020-12-01 | 2022-02-17 | 上海大学 | Composite electrode for tellurium-zinc-cadmium radiation detector and preparation method therefor |
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Application publication date: 20120919 |