CN2432610Y - Phase shift mask for X-ray lithography - Google Patents
Phase shift mask for X-ray lithography Download PDFInfo
- Publication number
- CN2432610Y CN2432610Y CN00223443U CN00223443U CN2432610Y CN 2432610 Y CN2432610 Y CN 2432610Y CN 00223443 U CN00223443 U CN 00223443U CN 00223443 U CN00223443 U CN 00223443U CN 2432610 Y CN2432610 Y CN 2432610Y
- Authority
- CN
- China
- Prior art keywords
- ray
- mask
- substrate
- ray lithography
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001015 X-ray lithography Methods 0.000 title claims abstract description 16
- 230000010363 phase shift Effects 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000001934 delay Effects 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Images
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A phase shift mask for X-ray lithography is composed of a substrate and a mask pattern film layer on the substrate. The mask pattern film layer has a certain thickness capable of generating 180 DEG phase delay, and uses the same (or different) material transparent to X-ray as the substrate, thereby improving the mask stability and the photoetching pattern quality, and solving the problems that the mask used for X-ray in the prior art is easy to deform due to thicker and heavier absorber and the absorption of X-ray. The mask is simple to manufacture and can be applied to the manufacturing process of large-scale integrated circuits.
Description
A kind of phase shifting mask that is used for X-ray lithography relates to the Micropicture photoetching technique, belongs to the improvement to the mask that is used for X-ray lithography.
Conventional lithography adopts the binary amplitude mask.The traditional masks that is used for X-ray lithography is generally by Si
xN
yOr on the substrate made of the material of Si one class and its with Au, TaSi, Ta, Ta
4The absorber that materials such as B, TaGe, TaReGe and W-Ti are made constitutes.As shown in Figure 1, be Si on the silicon bracing frame
xN
y(or SiC etc.) substrate, on the substrate absorber figure.General absorbent material is with Au, Ta etc., and its effect is to absorb the X ray of incident on it when exposure.And for reaching certain absorption requirement, absorber must have certain thickness.Since to the absorption of X-ray, require the material of substrate quite thin, generally about 2 microns.Therefore, the ratio that this defective that is used for the mask of X-ray lithography is absorbent material Au, TaSi etc. is great, easily makes very thin substrate bending, produces the mask distortion.Especially at present X-ray lithography mostly is contact/proximity printing greatly, and the ratio of figure is 1: 1 on mask graph and the silicon chip, and dimension of picture is thin, and the mask area is big, therefore easier the traditional masks generation is out of shape, and has influenced the resolution of X-ray lithography.
The purpose of this utility model is to overcome the deficiencies in the prior art and a kind of difficult generation distortion is provided and makes the transparent phase shifting mask that relatively simply is used for X-ray lithography.
The purpose of this utility model can realize by following technical measures: be used for the phase shifting mask of X-ray lithography, comprise producing the certain thickness to the transparent figure rete of X ray of 180 degree phase delays to having on transparent substrate of X ray and the substrate.
The purpose of this utility model also can realize by following technical measures: the substrate and the on-chip figure rete that are used for the phase shifting mask of X ray are to use with a kind of or different types of X ray material transparent (Si
xN
yDeng).
The utility model has following advantage than prior art: mask material is transparent fully to the X ray of exposure usefulness, and is a kind of new imaging process, can improve resolution, obtains thinner figure, particularly the fine rule array.And X ray do not had absorption, can not cause the mask distortion because of the absorber heating.
Because graph layer material of the present utility model is thinner and light than the absorber of traditional masks, is difficult for making photomask substrate flexural deformation, has improved the stability and the litho pattern quality of mask.
The photomask substrate and the figure rete that are used for X-ray lithography are all the X ray material transparent, so more easily make.
Below in conjunction with drawings and Examples the utility model is further described.
Fig. 1 is the structural drawing that is used for the traditional masks of X-ray lithography.
Fig. 2 is the structural drawing of phase shifting mask that is used for the embodiment of the present utility model of X-ray lithography.
The thick Si of about 2um that precipitation is arranged on mask holder (Si sheet) 1 as shown in Figure 2,
xN
yRete such as (or SiC) has the resistance corrosion material (as NiCr etc.) of about tens to 100 nanometers of one deck evaporation on the rete, scribble electron sensitive resist on it, by electron-beam direct writing or additive method expose, development, etching N iCr, and continue down etching Si
xN
y(180 ° of corresponding degree of depth of phase place are D=λ/[2 (n-1)] to film, and λ is the X ray wavelength, and n is Si to certain degree of depth
xN
yRefractive index), remove remaining NiCr film at last, erode silicon layer (staying support section 1) from the back side, just form the phase shifting mask that is used for X ray shown in Figure 2.Among Fig. 2, transparent Si
xN
yOn the substrate 2 transparent Si
xN
yFigure rete (phase shift layer) 3.This is a kind of transparent phase shifting mask, i.e. " chromium-free phase-shift mask " is transparent for X ray.
Claims (2)
1, a kind of phase shifting mask that is used for X-ray lithography comprises the transparent substrate of X ray (2), it is characterized in that: be to have to produce the certain thickness to the transparent figure rete (3) of X ray of 180 degree phase delays on the substrate (2).
2, the phase shifting mask that is used for X-ray lithography according to claim 1 is characterized in that: its substrate (2) and on-chip figure rete (3) are to X ray material transparent (Si with a kind of or different types of
xN
yDeng).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00223443U CN2432610Y (en) | 2000-06-21 | 2000-06-21 | Phase shift mask for X-ray lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00223443U CN2432610Y (en) | 2000-06-21 | 2000-06-21 | Phase shift mask for X-ray lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2432610Y true CN2432610Y (en) | 2001-05-30 |
Family
ID=33587987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00223443U Expired - Fee Related CN2432610Y (en) | 2000-06-21 | 2000-06-21 | Phase shift mask for X-ray lithography |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2432610Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100380381C (en) * | 2001-12-10 | 2008-04-09 | 凸版光掩膜公司 | Photomask and method for qualifying the same with a prototype specification |
| CN103019028A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
-
2000
- 2000-06-21 CN CN00223443U patent/CN2432610Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100380381C (en) * | 2001-12-10 | 2008-04-09 | 凸版光掩膜公司 | Photomask and method for qualifying the same with a prototype specification |
| CN103019028A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN103019028B (en) * | 2012-12-14 | 2014-01-15 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |