CN110989301B - Based on dry development and metal doping Sb 2 Photoetching method of Te photoresist - Google Patents
Based on dry development and metal doping Sb 2 Photoetching method of Te photoresist Download PDFInfo
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- CN110989301B CN110989301B CN201911325058.2A CN201911325058A CN110989301B CN 110989301 B CN110989301 B CN 110989301B CN 201911325058 A CN201911325058 A CN 201911325058A CN 110989301 B CN110989301 B CN 110989301B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a dry development and metal doping Sb-based 2 A method of photolithography of a Te photoresist comprising the steps of: (1) Deposition of metal doped Sb on a substrate by a thin film deposition system 2 Te photoresist film; (2) Exposing the photoresist film by using an exposure system to crystallize an exposed area; (3) And carrying out dry development by a reactive ion etching system to obtain the final micro-nano structure. The invention is based on dry development and metal doping of Sb 2 The photoetching method of the Te photoresist has simple process, low cost and environmental protection, and can be used for manufacturing devices in a full vacuum environment.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a dry development and metal doping Sb-based metal-doped metal-semiconductor laser 2 A method for photoetching Te photoresist.
Background
With the rapid development of information technology, the application field of high-end chips is becoming wider and wider. The manufacturing of the chip is not separated from the photoetching technology, the development is an indispensable step in the photoetching process, and the quality of photoresist development directly influences the subsequent chip and device preparation process. With the continuous miniaturization of nodes of the lithography technology, the requirements on the development technology are also increasing. At present, the development of photoresist is mainly based on wet method, the method is simple to operate, and the developer can be recycled. However, wet development is isotropic, i.e., the photoresist is not only etched longitudinally but also transversely during development, easily resulting in over-development or incomplete development; wet development can also cause expansion and contraction of the photoresist, reduce pattern accuracy, create defects, etc. (semiconductor technology, 1994, stage 1, tube). Thus, researchers have proposed a development step after exposure using dry etching techniques, but most photoresists used are based on organic polymeric materials [ j. Electrochem. Soc.1981,128,1065-1071; polym.Eng.Sci.1983,23,1043-1046; the 2 nd phase of 1986 of the science and photochemistry of sensitization, page numbers 1-6. The organic photoresist is generally prepared by adopting a solution spin coating method, so that the preparation steps are complicated, the steps such as baking and the like are involved, and the preparation process is not friendly to the environment.
In addition, in some optoelectronic device manufacturing processes, it is desirable to avoid the effects of air on device manufacturing as much as possible, which requires that the entire manufacturing process be conducted in a full vacuum environment. This requires that the preparation of the photoresist can be accomplished in a vacuum environment. Se (Se) 75 Ge 25 The inorganic photoresist is of interest in [ appl. Phys. Lett. ], 1980,36 (1): 107-109, because of the simple preparation steps and environmental friendliness; J.Vac.Sci.technology., B,1998,16 (4): 1987-1991)]. Luo Xiangang et al also propose a surface plasma super-resolution dry lithography method [ Chinese invention patent, patent number ZL 201210107638.6 ]]The method periodically deposits TeO on a substrate x The Ag film is used as photoresist to realize exposure and dry development. However, the method still needs to adopt wet etching to remove the residual Ag film, and cannot realize the device manufacture in a full vacuum environment.
In view of the foregoing, there is a need for a lithographic method that is simple in operation, low in cost, and operable in a full vacuum environment.
Disclosure of Invention
The invention aims to solve the technical problems of providing a dry development and metal doping Sb-based metal-doped metal-semiconductor wafer 2 The photoetching method of the Te photoresist has simple process, low cost and environmental protection, and can be used for manufacturing devices in a full vacuum environment.
In order to solve the technical problems, the invention provides a dry development and metal doping Sb-based 2 Photoetching method of Te photoresistComprising the following steps:
(1) Deposition of metal doped Sb on a substrate by a thin film deposition system 2 Te photoresist film;
(2) Exposing the photoresist by using an exposure system to crystallize an exposed area;
(3) And carrying out dry development by a reactive ion etching system to obtain the final micro-nano structure.
Further, the film deposition system is a magnetron sputtering coating machine.
Further, the metal is doped with Sb 2 The thickness of the Te photoresist film is 20 nm-500 nm.
Further, the metal is doped with Sb 2 In the Te photoresist, the doped metal element is selected from one of Cr, ag, ti, al, fe.
Further, the doping content of the metal is 1-20at%.
Further, the doped metal target material is sputtered by direct current with the power of 1-100W and Sb 2 The Te target adopts radio frequency sputtering with the power of 1-150W, the sputtering air pressure of 0.1-4 Pa, the rotating speed of the sample disk of 1-10 r/min and the sputtering time of 10 s-30 min.
Further, the exposure system is a laser direct writing lithography device, an electron beam direct writing device or an extreme ultraviolet lithography system, and the exposure energy is 10 2 ～10 8 mJ/cm 2 。
Further, the substrate includes quartz glass, silicon wafer, siC and GaN.
Further, the developing gas adopted by the reactive ion etching system is CF 4 、CHF 3 、SF 6 、O 2 Ar or the combination of two or three of the above gases, the flow rate of each gas is 1-100 sccm, the working air pressure is 1-200 mTorr, the power is 1-200W, and the development time is 1-30 min.
The invention has the beneficial effects that:
the invention is based on metal doped Sb 2 Te photoresist has the characteristic of amorphous to crystalline structure transformation under laser, electron beam or extreme ultraviolet radiation, and under the action of developing gasAnd etching selectivity is provided, so that the micro-nano structure is obtained on the photoresist. The advantages are that:
1) Metal doped Sb 2 The Te photoresist has simple preparation process and environment-friendly preparation process, is prepared in a vacuum environment, and provides conditions for manufacturing devices in a full vacuum environment;
2) With conventional Sb 2 Compared with Te material, the metal doping obviously improves Sb 2 Etching selectivity of Te photoresist;
3) Compared with organic photoresist, sb is doped by adopting metal 2 As Te phase change material is used as inorganic photoresist, atomic resolution and precision can be realized and the etched edge roughness is low because the minimum structural unit is an atom.
Drawings
FIG. 1 is a Cr-doped Sb of example 1 2 The components of the Te film represent EDS results;
FIG. 2 is Sb in example 1 2 Te and Cr-Sb 2 AFM results of the surface morphology of the Te film after exposure;
FIG. 3 is Sb in example 1 2 Te and Cr-Sb 2 AFM image of the sample surface morphology after Te dry development.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Example 1
The embodiment provides a Cr-doped Sb based on dry development 2 Te photoresist, in order to explain the effect of dry development, the following steps are adopted:
1) Plating a layer of Cr-Sb with the thickness of 200nm on a silicon wafer by adopting a magnetron sputtering system 2 Te photoresist film, wherein the Cr target material adopts 16W direct current power supply for sputtering, sb 2 The Te target material is sputtered by a radio frequency power supply of 80W. The sputtering air pressure is 0.8Pa, the rotating speed of the sample disk is 5r/min to ensure the uniform thickness of the film, and the sputtering time is 10min. By contrast, undoped Sb was prepared by magnetron sputtering 2 Te thinAnd (3) a film. Prepared Cr-Sb 2 The Te film composition is shown in the EDS results of FIG. 1.
2) Sb in laser direct writing system 2 Te and Cr-Sb 2 The Te photoresist is exposed, and the laser energy density reaching the surface of the photoresist is 1 multiplied by 10 4 mJ/cm 2 And the laser wavelength is 405nm, and the surface morphology of the obtained exposure sample is shown in the AFM result of FIG. 2.
3) Exposing Sb by a reactive ion etching system 2 Te and Cr-Sb 2 Dry development of Te photoresist with Cr-Sb 2 The developing gas used for Te photoresist is CF 4 Ar, the gas flow rates are respectively 70sccm and 30sccm, the working gas pressure is 50mTorr, the power is 100W, the development time is 10min, and the conditions are known to be optimal; sb (Sb) 2 The developing gas used for Te photoresist is CHF 3 And O 2 The gas flow rates were 60sccm and 2sccm, respectively, the operating gas pressure was 50mTorr, the power was 150W, the development time was 5 minutes, and the conditions were known to be optimal.
Sb after dry development 2 Te and Cr-Sb 2 The Te photoresist surface topography is shown in the AFM results of fig. 3. As can be seen from FIG. 3, with Sb 2 Te compared with the photoresist, cr-Sb 2 The surface morphology of Te photoresist is more obvious, which shows that the metal doping obviously improves Sb 2 Etching selectivity of Te photoresist.
Examples 2 to 4
The photolithography steps of examples 2 to 4 are identical to example 1, and the preparation parameters and the photolithography parameters of the photoresist are shown in the following table.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.
Claims (8)
1. Sb based on dry development and metal doping 2 A method of photolithography of a Te photoresist, comprising the steps of:
(1) Deposition of metal doped Sb on a substrate by a thin film deposition system 2 Te photoresist film;
(2) Exposing the photoresist film by using an exposure system to crystallize an exposed area;
(3) Carrying out dry development through a reactive ion etching system to obtain a final micro-nano structure;
wherein the metal is doped with Sb 2 In the Te photoresist, the doped metal element is selected from one of Cr, ag, ti, al, fe.
2. The Sb-based dry development and metal doping of claim 1 2 The photoetching method of the Te photoresist is characterized in that the film deposition system is a magnetron sputtering coating machine.
3. The Sb-based dry development and metal doping of claim 1 2 The photoetching method of Te photoresist is characterized in that the metal doped Sb 2 The thickness of the Te photoresist film is 20 nm-500 nm.
4. The Sb-based dry development and metal doping of claim 1 2 The photoetching method of the Te photoresist is characterized in that the doping content of the metal is 1-20at%.
5. The Sb-based dry development and metal doping of claim 1 2 The photoetching method of Te photoresist is characterized in that a doped metal target material is subjected to direct current sputtering, the power is 1-100W, and Sb 2 The Te target material adopts radio frequency sputtering, the power is 1-150W, the sputtering air pressure is 0.1-4 Pa, the rotating speed of the sample disc is 1-10 r/min, and the sputtering time is 10 s-30 min.
6. The dry development and gold-based process of claim 1Is doped with Sb 2 The photoetching method of Te photoresist is characterized in that the exposure system is a laser direct writing photoetching device, an electron beam direct writing device or an extreme ultraviolet photoetching system, and the exposure energy is 10 2 ~ 10 8 mJ/cm 2 。
7. The Sb-based dry development and metal doping of claim 1 2 A lithographic method of Te photoresist, characterized in that the substrate comprises quartz glass, silicon wafer, siC and GaN.
8. The Sb-based dry development and metal doping of claim 1 2 The photoetching method of Te photoresist is characterized in that the developing gas adopted by the reactive ion etching system is CF 4 、CHF 3 、SF 6 、O 2 Ar or the combination of two or three of the above gases, wherein each gas flow is 1-100 sccm, the working air pressure is 1-200 mTorr, the power is 1-200W, and the development time is 1-30 min.
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| CN2019112172730 | 2019-12-02 | ||
| CN201911217273 | 2019-12-02 |
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| CN110989301B true CN110989301B (en) | 2023-05-12 |
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| CN113009790A (en) * | 2021-02-25 | 2021-06-22 | 中国科学院微电子研究所 | Dry development method based on chalcogenide phase change material GST |
| CN113253575A (en) * | 2021-04-06 | 2021-08-13 | 苏州科技大学 | Based on Ge2Sb2Te5All-dry photoetching and etching method and application of photoresist |
| CN113249696B (en) * | 2021-04-19 | 2022-07-26 | 苏州科技大学 | NSb for realizing positive and negative conversion 2 Preparation of Te photoresist and photoetching method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454221A (en) * | 1982-04-08 | 1984-06-12 | At&T Bell Laboratories | Anisotropic wet etching of chalcogenide glass resists |
| CN101546728A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method for nano level columnar phase change memory cell array |
| CN108376642A (en) * | 2018-02-02 | 2018-08-07 | 中国科学院上海光学精密机械研究所 | Ge2Sb2Te5The dual-purpose wet etching method of the positive negtive photoresist of sulphur system phase change film material |
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| SG153748A1 (en) * | 2007-12-17 | 2009-07-29 | Asml Holding Nv | Lithographic method and apparatus |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454221A (en) * | 1982-04-08 | 1984-06-12 | At&T Bell Laboratories | Anisotropic wet etching of chalcogenide glass resists |
| CN101546728A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method for nano level columnar phase change memory cell array |
| CN108376642A (en) * | 2018-02-02 | 2018-08-07 | 中国科学院上海光学精密机械研究所 | Ge2Sb2Te5The dual-purpose wet etching method of the positive negtive photoresist of sulphur system phase change film material |
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