CN110989301A - Based on dry development and metal doping of Sb2Photoetching method of Te photoresist - Google Patents
Based on dry development and metal doping of Sb2Photoetching method of Te photoresist Download PDFInfo
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- CN110989301A CN110989301A CN201911325058.2A CN201911325058A CN110989301A CN 110989301 A CN110989301 A CN 110989301A CN 201911325058 A CN201911325058 A CN 201911325058A CN 110989301 A CN110989301 A CN 110989301A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing Sb based on dry development and metal doping2The photoetching method of the Te photoresist comprises the following steps: (1) deposition of metal doped Sb on a substrate by a thin film deposition system2A Te photoresist film; (2) exposing the photoresist film by using an exposure system to crystallize an exposure area; (3) and carrying out dry development by a reactive ion etching system to obtain the final micro-nano structure. The invention is based on dry development and metal doping of Sb2The photoetching method of the Te photoresist has the advantages of simple process, low cost and environmental protection, and can be used for manufacturing devices in a full vacuum environment.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a method for preparing Sb based on dry development and metal doping2And (3) a photoetching method of Te photoresist.
Background
With the rapid development of information technology, the application field of high-end chips is more and more extensive. The chip is manufactured without the photoetching technology, the development is an essential step in the photoetching process, and the quality of the photoresist development directly influences the subsequent chip and device preparation process. With the continuous miniaturization of the nodes of the lithography technology, the requirements on the development technology are higher and higher. At present, the development of the photoresist is mainly based on a wet process, the method is simple to operate, and the developer can be recycled. However, wet development is isotropic, i.e., the photoresist is corroded not only in the longitudinal direction but also in the transverse direction during development, which easily results in over-development or incomplete development; the wet development also causes expansion and contraction of the resist to reduce pattern accuracy, and causes defects, etc. (semiconductor technology, 1994, No. 1, tubal). Therefore, researchers have proposed dry etching techniques for the post-exposure development step, but most photoresists are based on organic polymer materials [ j. electrochem. soc.1981,128, 1065-1071; Polym.Eng.Sci.1983,23, 1043-1046; "photoscience and photochemistry", No. 2 of 1986, page numbers 1-6, the contents of which are incorporated herein by reference. The organic photoresist is generally prepared by a solution spin coating method, so that the preparation steps are complicated, the steps such as baking are involved, and the preparation process is not environment-friendly.
In addition, in the manufacturing process of some optoelectronic devices, it is necessary to avoid the influence of air on the device manufacturing as much as possible, which requires the whole manufacturing process to be performed in an all vacuum environment. This requires that the photoresist preparation be accomplished in a vacuum environment. Se75Ge25Inorganic photoresists have received attention because of their simple preparation steps and environmental friendliness [ appl. phys. lett.,1980,36(1): 107-; J.Vac.Sci.Technol.B, 1998,16(4):1987-]. Rocheng et al also propose a surface plasma super-resolutionDry photoetching method (Chinese patent of invention, patent number ZL 201210107638.6)]The method periodically deposits TeO on the substratexthe/Ag film is used as photoresist to realize exposure and dry development. However, the method still needs to remove the residual Ag film by wet etching, and the device manufacturing in the full vacuum environment cannot be realized.
In view of the above, it is desirable to provide a photolithography method that has simple operation steps and low cost and can be operated in a full vacuum environment.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for preparing Sb based on dry development and metal doping2The photoetching method of the Te photoresist has the advantages of simple process, low cost and environmental protection, and can be used for manufacturing devices in a full vacuum environment.
In order to solve the technical problems, the invention provides a method based on dry development and metal doping Sb2The photoetching method of the Te photoresist comprises the following steps:
(1) deposition of metal doped Sb on a substrate by a thin film deposition system2A Te photoresist film;
(2) exposing the photoresist by using an exposure system to crystallize an exposure area;
(3) and carrying out dry development by a reactive ion etching system to obtain the final micro-nano structure.
Further, the film deposition system is a magnetron sputtering coating machine.
Further, the metal is doped with Sb2The thickness of the Te photoresist film is 20 nm-500 nm.
Further, the metal is doped with Sb2In the Te photoresist, the doped metal element is one of Cr, Ag, Ti, Al and Fe.
Further, the doping content of the metal is 1-20 at%.
Further, the doped metal target material is sputtered by direct current with the power of 1-100W, Sb2The Te target material is subjected to radio frequency sputtering, the power is 1-150W, the sputtering air pressure is 0.1-4 Pa, the rotating speed of a sample disc is 1-10 r/min, and the sputtering time is 10 s-30 min.
Further, the exposure system is a laser direct-writing lithography device, an electron beam direct-writing device or an extreme ultraviolet lithography system, and the exposure energy is 102～108mJ/cm2。
Further, the substrate includes quartz glass, silicon wafer, SiC, and GaN.
Further, the developing gas adopted by the reactive ion etching system is CF4、CHF3、SF6、O2Ar or a combination of two or three of them, wherein the flow rate of each gas is 1-100 sccm, the working pressure is 1-200 mTorr, the power is 1-200W, and the developing time is 1-30 min.
The invention has the beneficial effects that:
the invention is based on metal doped Sb2The Te photoresist has the characteristic of structural transformation from an amorphous state to a crystalline state under the radiation of laser, electron beams or extreme ultraviolet, and has etching selectivity under the action of developing gas, so that a micro-nano structure is obtained on the photoresist. The advantages are that:
1) metal doped Sb2The preparation process of the Te photoresist is simple, the preparation process is environment-friendly, and the Te photoresist is prepared in a vacuum environment, so that conditions are provided for manufacturing devices in a full vacuum environment;
2) with conventional Sb2Compared with Te material, the metal doping obviously improves Sb2Etching selectivity of Te photoresist;
3) compared with organic photoresist, metal is adopted to dope Sb2The Te phase-change material is used as an inorganic photoresist, and the minimum structural unit of the Te phase-change material is an atom, so that the resolution and the precision of an atomic level can be realized, and the roughness of an etched edge is low.
Drawings
FIG. 1 is a Cr-doped Sb alloy obtained in example 12The composition of the Te thin film characterizes the EDS result;
FIG. 2 shows Sb in example 12Te and Cr-Sb2AFM result of surface appearance of the exposed Te film;
FIG. 3 shows Sb in example 12Te and Cr-Sb2AFM image of sample surface appearance after development by Te dry method.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Example 1
This example provides a dry development based Cr doped Sb2The Te photoresist is implemented by adopting the following steps in order to illustrate the effect of dry development:
1) plating a layer of Cr-Sb with the thickness of 200nm on a silicon wafer by adopting a magnetron sputtering system2Te photoresist film, wherein Cr target material is sputtered by 16W DC power supply, Sb2The Te target material is sputtered by a radio frequency power supply of 80W. The sputtering pressure is 0.8Pa, the rotating speed of the sample disc is 5r/min to ensure the uniform thickness of the film, and the sputtering time is 10 min. As a comparison, undoped Sb was prepared by magnetron sputtering2And (5) a Te thin film. Prepared Cr-Sb2The Te thin film composition is shown in the EDS results of fig. 1.
2) Using a laser direct writing system in Sb2Te and Cr-Sb2Exposing the Te photoresist to obtain a laser energy density of 1 × 104mJ/cm2And the laser wavelength was 405nm, the surface topography of the resulting exposed sample is shown in the AFM results of fig. 2.
3) Sb after exposure by reactive ion etching system2Te and Cr-Sb2Dry developing Te photoresist, wherein Cr-Sb2The developing gas used for Te photoresist is CF4Ar, the gas flow is respectively 70sccm and 30sccm, the working gas pressure is 50mTorr, the power is 100W, the development time is 10min, and the known optimal conditions are adopted; sb2The developing gas used for Te photoresist is CHF3And O2The gas flow rates are 60sccm and 2sccm, respectively, the working gas pressure is 50mTorr, the power is 150W, the development time is 5min, and the optimum conditions are known.
Sb after dry development2Te and Cr-Sb2The Te photoresist topography is shown in the AFM results of fig. 3. As can be seen in FIG. 3, with Sb2Te photolithographyGlue phase, Cr-Sb2The surface morphology of the Te photoresist is more obvious, which shows that the Sb is obviously improved by metal doping2Etch selectivity of Te photoresist.
Examples 2 to 4
The photolithography steps of examples 2-4 were the same as in example 1, and the preparation parameters and photolithography parameters of the photoresist were as shown in the following table.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (9)
1. Sb based on dry development and metal doping2The photoetching method of the Te photoresist is characterized by comprising the following steps of:
(1) deposition of metal doped Sb on a substrate by a thin film deposition system2A Te photoresist film;
(2) exposing the photoresist film by using an exposure system to crystallize an exposure area;
(3) and carrying out dry development by a reactive ion etching system to obtain the final micro-nano structure.
2. The dry development and metal doping-based Sb of claim 12The photoetching method of the Te photoresist is characterized in that the film deposition system is a magnetron sputtering coating machine.
3. The dry development and metal doping-based Sb of claim 12The photoetching method of Te photoresist is characterized in that the metal is doped with Sb2The thickness of the Te photoresist film is 20 nm-500 nm.
4. The dry development and metal doping-based Sb of claim 12The photoetching method of Te photoresist is characterized in that the metal is doped with Sb2In the Te photoresist, the doped metal element is one of Cr, Ag, Ti, Al and Fe.
5. The dry development and metal doping-based Sb of claim 42The photoetching method of the Te photoresist is characterized in that the doping content of the metal is 1-20 at%.
6. The dry development and metal doping-based Sb of claim 42The photoetching method of Te photoresist is characterized in that a doped metal target material is subjected to direct current sputtering with the power of 1-100W, Sb2The Te target material is subjected to radio frequency sputtering, the power is 1-150W, the sputtering air pressure is 0.1-4 Pa, the rotating speed of a sample disc is 1-10 r/min, and the sputtering time is 10 s-30 min.
7. The dry development and metal doping-based Sb of claim 12The photoetching method of Te photoresist is characterized in that the exposure system is a laser direct-writing photoetching device, an electron beam direct-writing device or an extreme ultraviolet photoetching system, and the exposure energy is 102～108mJ/cm2。
8. The dry development and metal doping-based Sb of claim 12The photoetching method of the Te photoresist is characterized in that the substrate comprises quartz glass, a silicon wafer, SiC and GaN.
9. The dry development and metal doping-based Sb of claim 12The photoetching method of Te photoresist is characterized in that the developing gas adopted by the reactive ion etching system is CF4、CHF3、SF6、O2Ar or a combination of two or three of them, wherein the flow rate of each gas is 1-100 sccm, the working pressure is 1-200 mTorr, the power is 1-200W, and the developing time is 1-30 min.
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| CN2019112172730 | 2019-12-02 | ||
| CN201911217273 | 2019-12-02 |
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| CN110989301B CN110989301B (en) | 2023-05-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113009790A (en) * | 2021-02-25 | 2021-06-22 | 中国科学院微电子研究所 | Dry development method based on chalcogenide phase change material GST |
| CN113249696A (en) * | 2021-04-19 | 2021-08-13 | 苏州科技大学 | NSb for realizing positive and negative conversion2Preparation of Te photoresist and photoetching method thereof |
| CN113253575A (en) * | 2021-04-06 | 2021-08-13 | 苏州科技大学 | Based on Ge2Sb2Te5All-dry photoetching and etching method and application of photoresist |
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|---|---|---|---|---|
| US4454221A (en) * | 1982-04-08 | 1984-06-12 | At&T Bell Laboratories | Anisotropic wet etching of chalcogenide glass resists |
| US20090153826A1 (en) * | 2007-12-17 | 2009-06-18 | Asml Netherlands B.V. | Lithographic method and apparatus |
| CN101546728A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method for nano level columnar phase change memory cell array |
| CN108376642A (en) * | 2018-02-02 | 2018-08-07 | 中国科学院上海光学精密机械研究所 | Ge2Sb2Te5The dual-purpose wet etching method of the positive negtive photoresist of sulphur system phase change film material |
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2019
- 2019-12-20 CN CN201911325058.2A patent/CN110989301B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454221A (en) * | 1982-04-08 | 1984-06-12 | At&T Bell Laboratories | Anisotropic wet etching of chalcogenide glass resists |
| US20090153826A1 (en) * | 2007-12-17 | 2009-06-18 | Asml Netherlands B.V. | Lithographic method and apparatus |
| CN101546728A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method for nano level columnar phase change memory cell array |
| CN108376642A (en) * | 2018-02-02 | 2018-08-07 | 中国科学院上海光学精密机械研究所 | Ge2Sb2Te5The dual-purpose wet etching method of the positive negtive photoresist of sulphur system phase change film material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113009790A (en) * | 2021-02-25 | 2021-06-22 | 中国科学院微电子研究所 | Dry development method based on chalcogenide phase change material GST |
| CN113253575A (en) * | 2021-04-06 | 2021-08-13 | 苏州科技大学 | Based on Ge2Sb2Te5All-dry photoetching and etching method and application of photoresist |
| CN113249696A (en) * | 2021-04-19 | 2021-08-13 | 苏州科技大学 | NSb for realizing positive and negative conversion2Preparation of Te photoresist and photoetching method thereof |
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