CN2348378Y

CN2348378Y - Infrared detector

Info

Publication number: CN2348378Y
Application number: CN 98212075
Authority: CN
Inventors: 宁永强; 周天明; 张宝林; 蒋红; 金亿鑫
Original assignee: CHANGCHUN PHYS INST CHINESE
Current assignee: CHANGCHUN PHYS INST CHINESE
Priority date: 1998-03-31
Filing date: 1998-03-31
Publication date: 1999-11-10
Anticipated expiration: 2008-03-31

Abstract

The utility model relates to an infrared detector which belongs to the field of optical detectors. The infrared detector controls the material components in the material growing process to enable a plain P-N structure to grow, and then produces a GaInAsSb infrared detector with a p<+>-p<->-n<->-n<-> structure by making use of the common semiconductor device technology. The detector produced in the utility model can avoid the effect to the performance of the detector because of doping.

Description

Infrared eye

The utility model belongs to the photo-detector field, specifically a kind of semiconductor photovoltaic type infrared eye.

At present, the main material that uses in semiconductor photovoltaic type infrared eye field has semiconductor materials such as GalnAs GaInAs, GalnAs phosphorus GaInAsP, mercury cadmium telluride HgCdTe, lead salt compound and antimony containing compounds.When making this class infrared eye, often adopt doping techniques growth p district or n district, form P-N or P-I-N structure.Survey light-in device, produce photo-generated carrier, by diffusion with under External Electrical Field, drift about, and in external electric field, form electric current, realize the detection of infrared light.Because adopt doping techniques in the element manufacturing, existing in of impurity forms defective in the material, increased the recombination probability of photo-generated carrier, thereby reduced the performance of infrared eye.

When adopting GalnAs tellurium GaInAsSb material infrared eye, owing to when the rich tellurium gallium of material component GaSb, be the P type, and when component richness indium arsenide InAs, be the N type.This just might make P-N or P-I-N knot by the jettisoning doping techniques, makes the infrared eye of GaInAsSb material.

The purpose of this utility model is to grow plain P-N structure by control material component in the material growth course, utilizes conventional semiconductor device technology technology to make p then ⁺-p ^--n ^--n ⁺The infrared eye of structure.

The structure principal character of the utility model infrared eye is: adopt GaSb to make substrate, GaInAsSb is main semiconductor material, on the substrate (2) of the rich GaSb of p+ type, adopt the GaInAsSb (3) of the rich GaSb of the strict control of thin film epitaxy technology component growth one deck p-type, the GaInAsSb layer (4) of the rich InAs of one deck n-type of growing then, at the GaInAsSb layer (5) of the rich InAs of (4) last regrowth one deck n+ type, make the p-face electrode (1) and the n-face electrode (6) of the detection light incident of Ohmic contact respectively with vacuum coating technology in the outside of (2) and (5) layer; Also can be at n ⁺On the type GaSb substrate, the GaInAsSb layer of the rich InAs of the n-type of growing successively, the GaInAsSb layer of the rich GaSb of p-type, the GaInAsSb layer of the rich GaSb of op+ type is made the u face electrode of Ohmic contact and the p-face electrode of detection light incident.

The parameter of each epitaxial layer structure of the design's infrared eye is as follows:

p ⁺(100) rich GaSb substrate hole concentration 10 ¹⁸~ 10 ¹⁹Cm ^-3

p ^-Rich GaSb GaInAsSb layer hole concentration 10 ¹⁵~ 10 ¹⁷Cm ^-3

n ^-Rich InAs GaInAsSb layer electron concentration 10 ¹⁵~ 10 ¹⁷Cm ^-3

n ⁺Rich InAs GaInAsSb layer electron concentration 10 ¹⁸~ 10 ¹⁹Cm ^-3

Utilize the epitaxial material and the parameter of MOCVD method growth detector:

570 ~ 620 ℃ of epitaxial growth temperatures

Input source material mol ratio: TMGa/TMIn=4 ~ 5

TMSb/AsH ₃=3~5

GaInAsSb layer (TMGa/TMIn)/(TMSb/AsH of rich GaSb grows ₃)-0.7 ~ 0.8

The grow GaInAsSb layer of rich InAsSb

TMGa/TMIn=0.2~0.4

TMSb/AsH ₃=0.2~0.4

(TMGa/TMIn)/(TMSb/AsH ₃)=0.7~0.8

Above-mentioned TMGa is that trimethyl gallium, TMIn are that trimethyl indium, TMSb are trimethylantimony, AsH ₃Be arsine.

Description of drawings:

Fig. 1 is the structural representation with the GaInAsSb infrared eye that forms on the rich GaSb substrate of p+ type, also is Figure of abstract;

1.p face electrode among the figure is surveyed the rich GaSb-GaInAsSb layer of the rich GaSb substrate of light incident layer 2.p+ type 3.p-type

4.n-the GaInAsSb layer of the rich InAs of type

5.n+ the GaInAsSb layer of the rich InAs of type

6.n face electrode

The Infrared Detectors of the design's structure can be used on the infrared acquisition in 1.8 μ-5 μ zone, has bandwidth sensitivity Advantages of higher.

According to the Infrared Detectors of the utility model structure fabrication, owing to adopt plain method growth P-N structure, The defective that the impurity of avoiding introducing in the interface causes and defective are compound to photo-generated carrier, can effectively improve spy Survey detectivity and the sensitivity of device.

Embodiment:

Utilize metal organic chemical vapor deposition (MOCVD) technology, grow the epitaxial wafer of schematic structure, utilize conventional semiconductor device technology to make infrared eye again.

Select for use the P type to mix tellurium Te (100) GaSb polished substrate, hole concentration is 7 * 10 ¹⁸Cm ^-3, cleaning with conventional chemical, in the MOCVD growing system of packing into after the corrosion, the source material that uses in epitaxial growth is trimethyl gallium (TMGa), trimethyl indium (TMIn), trimethylantimony (TMSb) and arsine (AsH ₃).The epitaxial growth substrate temperature is 600 ℃, adjusts the ratio of input source material, as TMGa/TMIn=4.5, TMSb/AsH3=4, (TMGa/TMIn)/(TMSb/AsH ₃)=0.77, the GaInAsSb epitaxial loayer hole concentration that grows the rich GaSb of plain p-type on the rich GaSb substrate of p+ type is 7 * 10 ¹⁶Cm ^-3, and then adjust the input source material proportion, as TMGa/TMIn=0.3, TMSb/AsH ₃=0.3, (TMGa/TMIn)/(TMSb/AsH ₃)=0.77, the GaAsSb epitaxial loayer electron concentration that grows the rich InAs of plain n-type is 5 * 10 ¹⁶Cm ^-3, the n of tin Sn is mixed in growth thereon ⁺The GaAsSb epitaxial loayer electron concentration of the rich InAs of type is 7 * 10 ¹⁸Cm ^-3

After outer layer growth is finished, use vacuum evaporation technique at P ⁺GaSb substrate surface and n ⁺The GaInAsSb extension aspect of rich InAs is deposit chromium/golden Cr/Au and gold-germanium-nickel Au-Ge-Ni film respectively, forms Ohmic contact behind the alloy chemical combination, utilizes conventional photoetching and packaging technology to make infrared eye again.

Claims

1, a kind of infrared eye, adopt tellurium gallium GaSb as substrate, GalnAs antimony GaInAsSb is as main material, it is characterized in that on the substrate (2) of the rich GaSb of p+ type, there is one deck to adopt the GaInAsSb (3) of the rich GaSb of p-type of the strict control of thin film epitaxy technology component growth, (3) above the GaInAsSb layer (4) that adopts the rich In/As of n-type of constructed growth, (4) being the GaInAsSb layer (5) of the rich n+ type of one deck InAs above, is respectively p face electrode (1) and the n face electrode (6) of making the detection light incident of Ohmic contact with vacuum coating technology in the outside of (2) layer and (5) layer.