CN2293067Y - Device for detecting and monitoring film epitaxial growth by light reflection difference method - Google Patents
Device for detecting and monitoring film epitaxial growth by light reflection difference method Download PDFInfo
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- CN2293067Y CN2293067Y CN 97216232 CN97216232U CN2293067Y CN 2293067 Y CN2293067 Y CN 2293067Y CN 97216232 CN97216232 CN 97216232 CN 97216232 U CN97216232 U CN 97216232U CN 2293067 Y CN2293067 Y CN 2293067Y
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- light
- difference method
- survey
- modulator
- epitaxially grown
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- 238000000034 method Methods 0.000 title claims description 22
- 238000012544 monitoring process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 6
- 230000010287 polarization Effects 0.000 claims description 5
- ICQCBPLLRDVROI-UHFFFAOYSA-N [Sb].[Cd].[Hg] Chemical compound [Sb].[Cd].[Hg] ICQCBPLLRDVROI-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 claims 1
- 229940125730 polarisation modulator Drugs 0.000 claims 1
- 230000005616 pyroelectricity Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 23
- 239000010409 thin film Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 238000012806 monitoring device Methods 0.000 abstract 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 5
- 238000011897 real-time detection Methods 0.000 description 4
- 238000000572 ellipsometry Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005492 condensed matter physics Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model relates to an optical instrument, especially optics and monitoring device, the device comprises laser instrument, modulator, plane mirror group, photoelectric detector, amplifier and data acquisition processing system etc. and is characterized in that laser instrument (1) output polarized light the place ahead and settle a modulator, after the polarized light through settling the plane mirror more than 2 on the light path through the modulation, incide to the substrate surface of being surveyed, arrive photodetector after membrane surface reflection, detection signal enlargies through the amplifier, inputs data acquisition system. The device is independent of a film making system, is arranged outside a film making chamber, has the characteristics of wide application range, simplicity and convenience in use and the like, and is a powerful tool for preparing and exploring high-quality epitaxial thin film materials.
Description
The utility model relates to a kind of optical instrument, particularly optical detection and supervising device.
Membraneous material has become the important means of various high performance devices of preparation and exploration new material with its unique advantage and characteristic.Because the fast development of thin film technique and equipment makes membrane science become one of most active front subject in recent years.Component, structure and the characteristic of artificial control atomic scale epitaxial growth film material, being preparation high-performance high-quality epitaxial film and the artificial basis of designing new function material and carrying out fundamental researchs such as its respective physical chemistry, is the most noticeable and interested field of Condensed Matter Physics and material science aspect.Wanting the novel artificial membraneous material of epitaxial growth special construction and characteristic, is vital for the real-time detection and the monitoring of thin film epitaxial growth process.
Reflection high energy electron diffraction is as document (1) Chinese Academy of Sciences Shenyang section instrument center product description and ellipsometry instrument; As document (2) U.S. EGG company product description, be the epitaxially grown main tool of real-time detection and monitoring film.Reflection high energy electron diffraction, be to be the high-power electron beam of φ 0.5～1mm by high energy electron rifle emission diameter, from becoming the angle of 1～3 degree to incide substrate surface with the epitaxial substrate surface, through monocrystal chip lattice surface diffraction, its diffraction spot is imaged on the video screen on electron gun opposite.The quality of diffraction fringe has reflected the quality of substrate (film) crystal mass.In the thin film epitaxial growth process, for good epitaxial growth, the variation of generating period of the roughness of substrate surface along with the epitaxial growth of unit cell stratiform, the cycle of surfaceness changes the cycle variation that causes the diffraction spot light and shade.People are exactly the epitaxial growth that this oscillation of intensity of utilizing diffraction class light and shade to change is come real-time detection and monitoring film.But reflection high energy electron diffraction, owing to the oxidation of its emitting electrons filament and electron beam than the reasons such as scattering in the hyperbar gas, can only be operated under high vacuum and the UHV condition.Need certain working gas and all can't use for the overwhelming majority than the equipment and the condition of work of system film under the high pressure conditions.And the ellipsometry instrument is when monitoring film epitaxial growth in real time, not only because its light source halogen lamp produces the ventilation that ozone need be got well, and its detector is operated in low temperature and entire equipment is operated under the fine constant temperature of temperature fluctuation less than 2 degree, condition of work requires harsh, and its range of application is very limited.
The purpose of this utility model is to overcome the shortcoming of above-mentioned prior art, in order to reach condition influence such as not being subjected to operating air pressure, temperature, can survey at normal temperatures and pressures, the purpose of monitoring film epitaxial growth situation, and, detect and the new device of monitoring the atomic scale thin film epitaxial growth with light reflection difference method thereby provide a kind of in order to improve the signal to noise ratio (S/N ratio) of detectable signal.
The purpose of this utility model is finished like this:
The utility model mainly is made up of laser instrument, modulator, level crossing group, photodetector, amplifier, data acquisition system (DAS) six parts.Wherein a modulator is settled in laser instrument output light the place ahead, by after being placed in 2 above level crossings on the light path, incide tested substrate surface through the polarized light of ovennodulation, after the film surface reflection to photo-detector, detectable signal amplifies through amplifier, is input to data acquisition system (DAS).
Below in conjunction with drawings and Examples the utility model is described in detail:
Fig. 1 is that a kind of embodiment of the utility model forms synoptic diagram.
Fig. 2 is the signal that the utility model embodiment 1 detects thin film epitaxial growth.
Drawing is described as follows:
The 1-laser instrument; The 2-lens;
3,10-light hurdle; 4, the 5-catoptron;
The 6-modulator; 7,8, the 9-level crossing;
11,14-epitaxial chamber window; 12-epitaxial chamber;
The 13-epitaxial substrate; The 15-photodetector;
The 16-amplifier; The 17-data acquisition processing system;
The utility model has the advantage of:
This device independently is placed in outside the thin film epitaxial growth system, is not subjected to temperature, gas during use Press impact. Can survey and the thin film epitaxial growth of monitoring the atom dimensional accuracy, applied range, Simple and easy to use.
Embodiment 1:
Manufacture one and survey and the epitaxially grown device of monitoring film by shown in Figure 1 with light reflection difference method.Laser instrument (1) is the laser instrument of an output polarization light, lens (2) are the divergence that reduces laser beam, light hurdle (3), (10) restriction and isolation parasitic light, catoptron (4) (5) changes beam direction, modulator (6) will be modulated into by its single direction polarized laser beam the polarization direction by P to S, again by S to P, frequency arrives several ten thousand Hz for hundreds of Hz, the modulating lasering beam that the polarization direction continuously changes, the flat mirror group that level crossing (7) (8) (9) is formed, both adjustment beam incided the phase place of substrate surface, again the incident direction of fine-tuning light beam and translation light beam; Light beam incides interior epitaxial substrate (13) surface of epitaxial chamber (12) from window (11), after substrate (13) reflection is penetrated from window (14), receive by photodetector (15), and light signal is transformed into electric signal, after amplifier (16) amplifies the difference in reflection signal of polarization direction P and S, provide result and curve by data acquisition processing system (17).Wherein light reflection difference method is surveyed with the epitaxially grown device of monitoring film and is made up of laser instrument (1), lens (2), light hurdle (3) (10), catoptron (4) (5), modulator (6), level crossing (7) (8) (9), photodetector (15), amplifier (16) and data acquisition processing system (17).
In other words the thin film epitaxial growth of atomic scale control, is exactly the primitive unit cell stratiform epitaxial growth that not only can artificially control, and the surface of film and interface all can reach the smooth of atomic scale.But the thickness of general primitive unit cell (atom or molecule) layer only be several dusts to tens dusts, and wavelength of visible light is several thousand dusts.That is to say that the variation of atomic scale control epitaxial growth film surfaceness only is the ppt of visible wavelength.Obviously, can't handle this class problem with the method for traditional optical, especially, more complicated for the epitaxial growth of films such as the compound of complexity and insulator.Can only be from epitaxial process, with distribution and the variation that vector method removes the analysed film surface field, relevant theoretical work well afoot.
We are used for exploring laser light molecular beam epitaxial growth SrTiO to experimental provision shown in Figure 1
3The epitaxial process of film obtains and the complete corresponding oscillating curve as shown in Figure 2 of reflection high energy electron diffraction the corresponding SrTiO in each peak on the curve
3The epitaxial growth of molecular layer.Experimental result shows, can use the epitaxial growth of light reflection difference method real-time detection and analysed film.We obtain the real-time information of thin film epitaxial growth, just the epitaxial growth of monitoring film in real time conversely.
As can be seen from Figure 1, all light reflection difference methods are surveyed and the epitaxially grown device of monitoring film all is outdoor in film growth, with be installed in the high vacuum thin film growth chamber on reflection high energy electron diffraction with need to ventilate, constant temperature compares with the ellipsometry instrument of conditions of work such as low temperature, survey and control thin film epitaxial growth with light reflection difference method and have its unique advantage, not only easy to use, and its range of application is very extensive.
Claims (7)
1. survey and the epitaxially grown device of monitoring film with light reflection difference method, form by laser instrument, modulator, level crossing group, photodetector, amplifier and data acquisition processing system etc., it is characterized in that: a modulator is settled in laser instrument output polarization light the place ahead, through the polarized light of ovennodulation by after being placed in 2 above level crossings on the light path, incide tested substrate surface, to photo-detector, detectable signal amplifies through amplifier, is input to data acquisition system (DAS) after the film surface reflection.
2. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 1 is described, it is characterized in that: described level crossing group is made up of 2 above level crossings.
3. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 1 is described, it is characterized in that: described modulator selects for use light ball modulator, half-wave plate, the polarizer etc. can change the light polarization modulator of polarisation of light aspect fast.
4. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 1 is described, it is characterized in that: described photodetector is the opto-electronic conversion detector of dissimilar quick responses such as photodiode, antimony cadmium mercury, pyroelectricity.
5. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 1 is described, it is characterized in that: described data acquisition processing system is selected computing machine, function recording instrument or printer etc. for use.
6. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 1 is described, it is characterized in that: settle lens, Guang Lan, catoptron in laser instrument output light the place ahead.
7. survey and the epitaxially grown device of monitoring film with light reflection difference method by claim 6 is described, it is characterized in that: on the light path of level crossing back, settle the light hurdle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97216232 CN2293067Y (en) | 1997-05-30 | 1997-05-30 | Device for detecting and monitoring film epitaxial growth by light reflection difference method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97216232 CN2293067Y (en) | 1997-05-30 | 1997-05-30 | Device for detecting and monitoring film epitaxial growth by light reflection difference method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2293067Y true CN2293067Y (en) | 1998-09-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97216232 Expired - Fee Related CN2293067Y (en) | 1997-05-30 | 1997-05-30 | Device for detecting and monitoring film epitaxial growth by light reflection difference method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2293067Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105571515A (en) * | 2015-12-25 | 2016-05-11 | 中国石油大学(北京) | Method for detecting three-dimensional structure of sample by oblique-incidence reflectivity difference method |
| CN112857270A (en) * | 2021-01-08 | 2021-05-28 | 上海科技大学 | Method for in-situ real-time quantitative detection of film roughness by using RHEED |
-
1997
- 1997-05-30 CN CN 97216232 patent/CN2293067Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105571515A (en) * | 2015-12-25 | 2016-05-11 | 中国石油大学(北京) | Method for detecting three-dimensional structure of sample by oblique-incidence reflectivity difference method |
| CN112857270A (en) * | 2021-01-08 | 2021-05-28 | 上海科技大学 | Method for in-situ real-time quantitative detection of film roughness by using RHEED |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |