CN2265986Y - Monocrystalline silicon radiant heater for preparing thin film - Google Patents
Monocrystalline silicon radiant heater for preparing thin film Download PDFInfo
- Publication number
- CN2265986Y CN2265986Y CN 95224595 CN95224595U CN2265986Y CN 2265986 Y CN2265986 Y CN 2265986Y CN 95224595 CN95224595 CN 95224595 CN 95224595 U CN95224595 U CN 95224595U CN 2265986 Y CN2265986 Y CN 2265986Y
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- CN
- China
- Prior art keywords
- film
- heater
- single crystal
- silicon single
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract description 7
- 239000010409 thin film Substances 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005855 radiation Effects 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 14
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 241000446313 Lamella Species 0.000 description 3
- 206010000496 acne Diseases 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a film preparation technique especially relates to a make technical field with heater in the film preparation. The utility model discloses a prepare the two-sided superconductive film of large tracts of land of even thickness to provide a hot plate of processing into concave type by monocrystalline silicon, it fixes the electrode at radiation shield through metal splintA monocrystalline silicon radiation substrate heater is formed on the frame. The heater has a service temperature of 1000 deg.C and a constant temperature region of 70 × 70mm2It is suitable for preparing not only single-sided film but also double-sided film.
Description
The utility model relates to a kind of film preparing technology, particularly relates to used well heater manufacturing technology field in a kind of film preparation process.
Pulse laser method and sputtering method are two kinds of best method that prepare film.Now not only can prepare high Tc superconducting film but also can prepare ferroelectric membranc (as pzt thin film) with these two kinds of methods, optical thin film, hundreds of film such as superhard thin film.Using two kinds of film-forming methods prepares film substrate and all will heat, preparing film with other film-forming methods such as method of evaporation also usually will heat substrate, and all adopt the hot wire heater at present, halogen lamp heater and carbon dioxide laser well heater, it is little that they all exist the flat-temperature zone, the highest usable temp is low, shortcomings such as complex structure, as document:
1.K.H.Wu，C.L.Lee，J.Y.Juang，T.M.Uen，and
Y.S.Gou，Appl.Phys.Lett.，58，10(1991)；
2.M.Y.Chem，A.Gupta，B.W.Hussey?and?T.M.Shaw，
J.Vac.Sci.，All，3(1993)；
3.Xiao?min?Li，Tomoji?KAWAI，and?Shichio?KAWAI，
Jpn.J.Appl.Phys., 33, report among the L18 (1994).These shortcomings will influence film quality undoubtedly, and especially the quality influence to the large area two-side film is just more obvious.
The purpose of this utility model is to overcome the shortcoming of above-mentioned prior art, in order to prepare the large area two-side superconducting thin film of uniform thickness, thereby provide a kind of and be processed into the matrix hot-plate by silicon single crystal, it constitutes silicon single crystal radiation substrate heater by the metal splint fixed electorde.
Task of the present utility model is finished like this: with wire cutting method n type or p type single crystal silicon plate are processed into the matrix hot-plate, its two-end thickness is slightly thicker than low groove, and a platform arranged respectively in groove, with monocrystalline plate two ends and two fixing compositions together of metal foil electrode, also can be fixed on formation silicon single crystal radiation substrate heater on the radiation shielding shelf by metal splint.
Fig. 1 is a silicon single crystal radiation substrate heater.
Drawing is described as follows:
1.-the silicon single crystal hot-plate; 2.-metal splint; 3.-metal foil electrode;
4.-the radiation shielding shelf; 5.-substrate sample of preparation heating;
The used material of monocrystalline silicon plate can be N-shaped or p-type, but resistivity is in each one Divide essential uniformity, the thickness error of line cutting processing must be enough little, to guarantee The uniformity of flat-temperature zone temperature. The used metal of metal splint by the plated film Da Wendu of time institute and Environmental gas determines that generally better with stainless steel, its thickness is pressed at the highest substrate temperature The time indeformable be criterion, generally between 0.3-2cm. Metal foil electrode is one Kind of soft connection electrode, it be for the monocrystalline silicon heating plate is unlikely when the high temperature should because expanding Power and breaking adopts, and its material can be the various metals such as copper, silver, gold, by institute Film kind substrate maximum temperature and the ambiance of preparation determine. Radiation shield is Arrange in order to take full advantage of heating power, it is a kind of heat ray reflector, one As it can be by the stainless steel substrates of polishing, or plate quartz plate or other material of reflector layer Flat board, the number of plies can be selected between 1 to 8 layer. Radiation shield can not add sometimes yet, But at this moment heating power will increase to some extent.
The utility model provides a kind of high-quality substrate pharoid of making for pulse laser plated film or the employed monocrystalline silicon of sputtering coating equipment, and its highest usable temp reaches 1000 ℃, and the flat-temperature zone can reach 70 * 70mm2, flat-temperature zone in the time of 1000 ℃ Distortion can be ignored. This heater not only is suitable for preparing single-sided film, and is suitable for The preparation two-side film membrane.
Below in conjunction with drawings and Examples the utility model is elaborated: embodiment 1:
Heater structure as shown in Figure 1.Wherein (1) is the silicon single crystal hot-plate, all thick 2mm of rest part except that the thick 1cm in two ends, and the dark 2mm of groove, high 30mm has the pimple of two high 0.5mm to be used for placing substrate apart from trough rim along the 0.5mm place, the high 70mm of whole well heater, wide 60mm.(2) be the wide 10mm that makes with stainless steel, the clamping plate of thick 6mm, long 100mm respectively has the hole of a diameter 4mm at 10mm place, distance two ends, connect silicon hot-plate and electrode so that clamp.(3) be the silver foil electrode of thick 0.2mm, its width is identical with the silicon hot-plate.(4) be the radiation shielding shelf made from the stainless steel substrates of the thick 0.2mm that polishes, wherein stainless steel substrates has 5 layers.This well heater is installed on the laser coating equipment, feeds current flow heats, with infrared thermometer HEATER FOR MEASURING each point temperature, the result shows that the substrate top temperature can reach 960 ℃, at 30 * 30mm
2Substrate on the maximum difference of temperature be 2 ℃, the YBCO superconducting thin film with this well heater prepares reaches domestic and international advanced level through the measurement leading indicator, is specially Tc=91.6K, Jc=2 * 10
6A/cm
2Embodiment 2:
Heater structure as shown in Figure 1.Wherein (1) is the silicon single crystal hot-plate, except that the thick 15mm in two ends, and all thick 2mm of rest part, the dark 3mm of groove, high 50mm has the pimple of two high 0.5mm to be used for placing substrate apart from trough rim along the 0.5mm place, the high 100mm of whole well heater, wide 80mm.(2) be the wide 15mm that makes with stainless steel, the clamping plate of thick 8mm, long 150mm respectively has the hole of a diameter 4mm at 15mm place, distance two ends, connect silicon radial lamella and electrode so that clamp.(3) be the electrode that the silver foil of thick 0.2mm is made, its width is identical with the silicon hot-plate.(4) be the radiation shielding shelf made from the stainless steel substrates of thick 0.2mm of polishing, wherein stainless steel substrates has 5 stacked together.This well heater is installed on the laser coating equipment feeds current flow heats, with infrared thermometer HEATER FOR MEASURING each point temperature, the result shows that the substrate top temperature can reach 960 ℃, at 50 * 50mm
2Substrate on the maximum difference of temperature be 2 ℃, the YBCO double sided superconducting film with this well heater prepares reaches domestic and international advanced level through the measurement leading indicator, is specially first Tc=90.6K, Jc=1.6 * 10
6A/cm
2, second Tc=91.3K, Jc=2.6 * 10
6A/cm
2Embodiment 3:
Heater structure as shown in Figure 1.Wherein (1) is the silicon single crystal radial lamella, except that the thick 10mm in two ends, and all thick 2mm of rest part, the dark 1.5mm of groove, high 15mm has the pimple of two high 0.5mm to be used for placing substrate apart from trough rim along the 0.5mm place, the high 70mm of whole well heater, wide 50mm.(2) be the wide 10mm that makes with stainless steel, the clamping plate of thick 5mm, long 100mm respectively has the hole of a diameter 4mm at 10mm place, distance two ends, connect silicon radial lamella and electrode so that clamp.(3) be that its width of electrode of making of the silver foil of thick 0.3mm is identical with the silicon hot-plate.(4) be the radiation shielding made from thick 2mm polishing quartz plate two sides plated with gold reflector layer, have 2 such quartz plates.This well heater is installed on the RF Sputting film-plating apparatus, feeds current flow heats, with infrared thermometer HEATER FOR MEASURING each point temperature, the result shows that the substrate top temperature can reach 960 ℃, at 15 * 30mm
2Substrate on the maximum difference of temperature be 2 ℃, the BaTiO for preparing with this well heater
3Film reaches domestic and international advanced level through measuring leading indicator.
Claims (3)
1. silicon single crystal radiation heater that is used to prepare film of forming by silicon single crystal heating piece, electrode, clamping plate, it is characterized in that: 1. and on the groove both sides silicon single crystal is made the moulding hot-plate respectively has one to protrude platform, and its two ends are 2. 3. fixing with two metal foil electrodes by clamping plate;
2. by the described silicon single crystal radiation heater that is used to prepare film of claim 1, it is characterized in that: also be included in monocrystalline hot-plate two ends and fix a shielding shelf simultaneously 4. by clamping plate and electrode;
3. by the described silicon single crystal radiation heater that is used to prepare film of claim 1, it is characterized in that: 4. the shielding shelf comprises the stainless steel substrates of 1-8 layer or plates the quartz plate lamination composition of reflector layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95224595 CN2265986Y (en) | 1995-10-27 | 1995-10-27 | Monocrystalline silicon radiant heater for preparing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95224595 CN2265986Y (en) | 1995-10-27 | 1995-10-27 | Monocrystalline silicon radiant heater for preparing thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2265986Y true CN2265986Y (en) | 1997-10-29 |
Family
ID=33871331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95224595 Expired - Fee Related CN2265986Y (en) | 1995-10-27 | 1995-10-27 | Monocrystalline silicon radiant heater for preparing thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2265986Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101336014B (en) * | 2008-07-31 | 2011-01-12 | 江苏亿能电气有限公司 | Ultra-thin plate type heater and manufacturing method thereof |
-
1995
- 1995-10-27 CN CN 95224595 patent/CN2265986Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101336014B (en) * | 2008-07-31 | 2011-01-12 | 江苏亿能电气有限公司 | Ultra-thin plate type heater and manufacturing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |