CN221329447U - Double-stage semiconductor heat dissipation device of high-voltage pulse assembly - Google Patents
Double-stage semiconductor heat dissipation device of high-voltage pulse assembly Download PDFInfo
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- CN221329447U CN221329447U CN202323091243.4U CN202323091243U CN221329447U CN 221329447 U CN221329447 U CN 221329447U CN 202323091243 U CN202323091243 U CN 202323091243U CN 221329447 U CN221329447 U CN 221329447U
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- voltage pulse
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 33
- 238000005057 refrigeration Methods 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000013021 overheating Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000002828 fuel tank Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a double-stage semiconductor heat dissipation device of a high-voltage pulse assembly, which belongs to the technical field of pulse high-voltage electric fields, and comprises an oil tank, wherein a heat dissipation fin is sleeved outside the oil tank, and a refrigeration frame is wrapped on the outer surface of the oil tank; the top, the left lower end and the right lower end between the refrigeration frame and the radiating fins are respectively provided with a radiating component; the top of refrigeration frame is connected with positive electrode terminal and negative electrode terminal, both ends have all been seted up around the front side of the radiating component at refrigeration frame top and have been dodged the breach groove, positive electrode terminal and negative electrode terminal are located the breach groove of dodging that corresponds respectively. The utility model can effectively reduce the temperature of the oil tank, ensure the stable operation of equipment and improve the heat dissipation effect.
Description
Technical Field
The utility model belongs to the technical field of pulse high-voltage electric fields, and particularly relates to a double-order semiconductor heat dissipation device of a high-voltage pulse assembly.
Background
Pulsed power devices typically use an air-cooled system inside the device to control temperature while the device is operating. When the nanosecond pulse equipment operates, the whole equipment is in a high-load operation state, and a common air cooling system cannot meet the cooling requirement of an oil tank.
Tank overheating of nanosecond pulse equipment can present some hazards and risks, including:
Equipment failure: high temperatures can negatively impact the proper operation of the device. Overheating of the tank may cause damage to critical components or electronic elements of the equipment, leading to equipment failure or complete shut down.
Performance degradation: when the tank is overheated, the performance of the apparatus may be limited or reduced. Nanosecond pulse devices typically need to operate within a specific temperature range to maintain their optimal performance. Overheating may cause the device to malfunction, performance degradation or unstable output signal quality.
Potential safety hazard: overheating of the tank can raise safety concerns, particularly if flammable or explosive materials are present in the vicinity of the tank. The high temperatures may increase the risk of fire or explosion, creating a hazard to the equipment and the surrounding environment.
The service life is shortened: continued overheating of the tank may lead to reduced equipment life. High temperatures can accelerate degradation and damage to equipment components, leading to premature equipment failure or the need for more frequent repair and replacement of components.
Based on this, we propose a dual-stage semiconductor heat sink for high voltage pulse components.
Disclosure of utility model
The utility model aims to overcome the problems in the prior art and provide a double-stage semiconductor heat dissipation device of a high-voltage pulse assembly, which can effectively reduce the temperature of an oil tank, ensure the stable operation of equipment and improve the heat dissipation effect.
In order to achieve the technical purpose and the technical effect, the utility model is realized by the following technical scheme:
the double-stage semiconductor heat dissipation device of the high-voltage pulse assembly comprises an oil tank, wherein heat dissipation fins are sleeved outside the oil tank, and a refrigeration frame is wrapped on the outer surface of the oil tank;
The top, the left lower end and the right lower end between the refrigeration frame and the radiating fins are respectively provided with a radiating component;
The top of refrigeration frame is connected with positive electrode terminal and negative electrode terminal, both ends have all been seted up around the front side of the radiating component at refrigeration frame top and have been dodged the breach groove, positive electrode terminal and negative electrode terminal are located the breach groove of dodging that corresponds respectively.
Preferably, the refrigeration frame is made of a plurality of refrigeration plates.
Based on the technical characteristics, the upper, lower, left and right sides of the oil tank are conveniently wrapped, and meanwhile, the heat-conducting silica gel is used for tightly wrapping the refrigerating plate on the surface of the oil tank, so that the tight fit between the oil tank and the refrigerating frame is ensured.
Preferably, the heat dissipation assembly comprises a heat conductive plate; the radiating fins are uniformly arranged on the periphery of the outer wall of the supporting frame, the upper end of the left inner wall and the upper end of the right inner wall respectively; the top, left side wall lower extreme and right side wall lower extreme of refrigeration frame evenly are provided with the semiconductor cooling tube of double-order respectively, and the bottom of every semiconductor cooling tube of double-order and the bottom of anodal terminal and negative pole terminal all are fixed with the copper base guide piece through the soldering.
Based on the technical characteristics, the copper-based guide piece is firmly and reliably fixed through soldering.
Preferably, a heat insulating plate matched with the double-stage semiconductor radiating pipe is arranged between the heat conducting plate and the refrigerating frame, and the contact surface of the heat conducting plate and the supporting frame is treated by using heat conducting silica gel.
Based on the technical characteristics, the heat transfer efficiency of the heat dissipation assembly is improved.
Preferably, the top, the lower end of the left side wall and the lower end of the right side wall of the refrigeration frame are respectively and uniformly provided with embedded grooves matched with the copper-based guide sheets.
Based on the technical characteristics, the copper-based guide sheet is convenient to embed and fix on the refrigeration frame.
Preferably, the double-stage semiconductor radiating tube is composed of a radiating tube shell, a P-type semiconductor, an N-type semiconductor and a copper conductor; the double-stage semiconductor radiating tube is of a double-stage configuration formed by nesting a P-type semiconductor and an N-type semiconductor in a radiating tube shell.
Based on the technical characteristics, the dual-stage semiconductor radiating pipe can absorb internal heat in a conducting state and release the internal heat to the outside.
In summary, the present utility model includes at least one of the following beneficial effects: according to the utility model, through the cooperation of the radiating fins and the radiating components, the double-stage semiconductor radiating pipe can absorb internal heat in a conducting state and release the internal heat to the outside, so that the temperature of the oil tank can be effectively reduced, the stable operation of equipment is ensured, and the radiating effect is improved.
Drawings
FIG. 1 is a schematic view of a usage state structure of the present utility model;
FIG. 2 is a front view of FIG. 1 of the present utility model;
FIG. 3 is a schematic diagram of a heat dissipating assembly according to the present utility model;
FIG. 4 is a schematic diagram of a heat dissipating assembly according to the present utility model;
FIG. 5 is a schematic view of a refrigeration frame according to the present utility model;
FIG. 6 is a schematic view of the structure of the fuel tank of the present utility model;
FIG. 7 is a schematic diagram of a heat sink according to the present utility model;
FIG. 8 is a front view of FIG. 7 in accordance with the present utility model;
FIG. 9 is a schematic view of the structure of the heat shield of the present utility model;
Fig. 10 is a schematic structural view of a dual-stage semiconductor radiating pipe according to the present utility model;
FIG. 11 is a flow chart of a heat dissipating system according to the present utility model;
In the drawings, the list of components represented by the various numbers is as follows:
The heat-dissipating device comprises a 1-oil tank, 2-radiating fins, 201-supporting frames, 202-radiating fins, 3-refrigerating frames, 301-embedded grooves, 4-double-stage semiconductor radiating pipes, 401-radiating pipe shells, 402-P type semiconductors, 403-N type semiconductors, 404-copper conductors, 5-positive terminals, 6-negative terminals, 7-radiating components, 8-avoidance notch grooves, 701-heat-conducting plates, 702-heat-insulating plates and 703-copper-based guide plates.
Detailed Description
The utility model is described in further detail below with reference to fig. 1-10.
An embodiment of the present utility model provides: as shown in fig. 1, 6 and 11, a dual-stage semiconductor heat dissipating device of a high-voltage pulse assembly includes an oil tank 1, which is a heat source main body in nanosecond pulse equipment, and in nanosecond pulse equipment, an oil temperature monitoring device, a PID process controller, a heat dissipating power supply and air cooling equipment (all of the prior art);
the outside of the oil tank 1 is sleeved with a cooling fin 2, and the outer surface of the oil tank 1 is wrapped with a refrigeration frame 3;
As shown in fig. 2, heat dissipation components 7 are arranged at the top, the left lower end and the right lower end between the refrigeration frame 3 and the heat dissipation fins 2;
As shown in fig. 2 and 3, the top of the refrigeration frame 3 is connected with a positive electrode terminal 5 and a negative electrode terminal 6, and the left and right ends of the front side of the heat dissipation assembly 7 at the top of the refrigeration frame 3 are respectively provided with an avoidance notch groove 8, and the positive electrode terminal 5 and the negative electrode terminal 6 are respectively positioned in the corresponding avoidance notch grooves 8.
As shown in fig. 5, the refrigeration frame 3 is made of a plurality of refrigeration plates, so that the periphery of the oil tank 1 is conveniently wrapped up, down, left and right, and meanwhile, the refrigeration plates are tightly wrapped on the surface of the oil tank 1 by using heat-conducting silica gel, so that the tight fit between the oil tank 1 and the refrigeration frame 3 is ensured, and the heat dissipation effect is optimized.
As shown in fig. 7 and 8, the heat sink 2 includes a supporting frame 201, and heat dissipation fins 202 are uniformly provided around the outer wall of the supporting frame 201, at the upper end of the left inner wall and at the upper end of the right inner wall, respectively;
as shown in fig. 3, 4 and 5, the heat dissipation assembly 7 includes a heat conduction plate 701, the top, the lower end of the left side wall and the lower end of the right side wall of the refrigeration frame 3 are respectively and uniformly provided with a double-stage semiconductor heat dissipation tube 4 (NP second-order semiconductor), the bottom of each double-stage semiconductor heat dissipation tube 4 and the bottoms of the positive terminal 5 and the negative terminal 6 are respectively fixed with a copper-based guide plate 703 through soldering, the surface of the refrigeration plate is embedded with the copper-based guide plate 703, and the double-stage semiconductor heat dissipation tube 4 is fixed on the copper-based guide plate 703 through soldering, so that the current conduction of the double-stage semiconductor heat dissipation tube 4 is ensured, and the soldering fixes the copper-based guide plate 703 firmly and reliably; the top, the lower end of the left side wall and the lower end of the right side wall of the refrigeration frame 3 are respectively and uniformly provided with embedded grooves 301 matched with the copper-based guide sheets 703, so that the copper-based guide sheets 703 are conveniently embedded and fixed on the refrigeration frame 3;
As shown in fig. 2, 3 and 9, a heat insulation board 702 matched with the double-stage semiconductor radiating pipe 4 is arranged between the heat conduction board 701 and the refrigeration frame 3, the heat insulation board 702 is added around the double-stage semiconductor radiating pipe 4 to isolate heat exchange of cold and hot components on the inner surface and the outer surface, and the heat transfer in the refrigeration and heat dissipation processes is weakened by the existence of the heat insulation board 702; the contact surface between the heat conducting plate 701 and the supporting frame 201 is treated by using heat conducting silica gel, so that the heat transfer performance is convenient to optimize, and the heat transfer efficiency of the heat dissipation assembly 7 is improved.
As shown in fig. 10, the dual-stage semiconductor radiating pipe 4 is composed of a radiating pipe housing 401, a P-type semiconductor 402, an N-type semiconductor 403, and a copper conductor 404; the dual-stage semiconductor radiating tube 4 is a dual-stage configuration formed by embedding the P-type semiconductor 402 and the N-type semiconductor 403 into the radiating tube housing 401, the whole dual-stage semiconductor radiating tube 4 is connected with the external anode and the external cathode by a copper conductor 404 and is used as a semiconductor connecting guide piece in the radiating tube housing 401, and compared with a first-stage structure, the dual-stage semiconductor radiating tube 4 has stronger tolerance of temperature difference between the inner wall and the outer wall.
Working principle:
in the internal hyperthermia assembly of nanosecond pulse devices (tank 1), we use an optimized set of heat dissipation system flows. The workflow of this system is as shown in fig. 11 above:
The internal and external temperatures of the oil tank 1 are transmitted to the PID process controller through the oil temperature monitoring device. When the oil temperature exceeds a set threshold, the PID process controller activates the heat sink power supply. Meanwhile, the air cooling equipment and the double-stage semiconductor heat dissipation device of the high-voltage pulse assembly are opened simultaneously. The air cooling device is mainly used for reducing the temperature of the device shell, and the physical structure of the radiating fin 2 of the double-stage semiconductor radiating device is beneficial to air cooling and temperature reduction, heat generation and heat conduction of the semiconductor tube and heat dissipation of the oil tank 1. The dual-stage semiconductor radiating pipe 4 (NP second-order semiconductor) absorbs internal heat in a conductive state and discharges it to the outside. The presence of the heat shield 702 impairs heat transfer during cooling and heat dissipation. In addition, the refrigerating plate covers the periphery of the oil tank 1, so that the heat dissipation of the double-stage semiconductor heat dissipation tube 4 (NP second-order semiconductor) is more efficient. Through the optimized heat dissipation system flow, the temperature of a high-heat component (the oil tank 1) can be effectively controlled and reduced in nanosecond pulse equipment, and the stable operation and heat dissipation effect of the equipment are ensured.
The above embodiments are not intended to limit the scope of the present utility model, so: all equivalent changes in structure, shape and principle of the utility model should be covered in the scope of protection of the utility model.
Claims (6)
1. The utility model provides a high-voltage pulse assembly's double-order semiconductor heat abstractor, includes oil tank (1), its characterized in that: the cooling device is characterized in that a cooling fin (2) is sleeved outside the oil tank (1), and a refrigerating frame (3) is wrapped on the outer surface of the oil tank (1);
The top, the left lower end and the right lower end between the refrigeration frame (3) and the radiating fins (2) are respectively provided with a radiating component (7);
The top of refrigeration frame (3) is connected with positive electrode terminal (5) and negative electrode terminal (6), both ends have all been seted up around the front side of cooling module (7) at refrigeration frame (3) top and have been dodged breach groove (8), positive electrode terminal (5) and negative electrode terminal (6) are located respectively and dodge breach groove (8) that correspond.
2. The dual-stage semiconductor heat sink of a high voltage pulse assembly of claim 1, wherein: the refrigeration frame (3) is made of a plurality of refrigeration plates.
3. The dual-stage semiconductor heat sink of a high voltage pulse assembly of claim 1, wherein: the heat dissipation assembly (7) comprises a heat conducting plate (701); the radiating fins (2) comprise supporting frames (201), and radiating fins (202) are uniformly arranged on the periphery of the outer wall, the upper end of the left inner wall and the upper end of the right inner wall of the supporting frames (201) respectively; the top, left side wall lower extreme and right side wall lower extreme of refrigeration frame (3) evenly are provided with bipole semiconductor cooling tube (4) respectively, and the bottom of every bipole semiconductor cooling tube (4) and the bottom of anodal terminal (5) and negative pole terminal (6) all are fixed with copper base guide piece (703) through the soldering.
4. A dual-stage semiconductor heat sink of a high voltage pulse assembly as recited in claim 3, wherein: an insulating plate (702) matched with the double-stage semiconductor radiating pipe (4) is arranged between the heat conducting plate (701) and the refrigerating frame (3), and the contact surface of the heat conducting plate (701) and the supporting frame (201) is treated by using heat conducting silica gel.
5. A dual-stage semiconductor heat sink of a high voltage pulse assembly as recited in claim 3, wherein: the top, the left side wall lower extreme and the right side wall lower extreme of refrigeration frame (3) evenly set up respectively with copper base guide piece (703) matched with inlay attach recess (301).
6. A dual-stage semiconductor heat sink of a high voltage pulse assembly as recited in claim 3, wherein: the double-stage semiconductor radiating tube (4) is composed of a radiating tube shell (401), a P-type semiconductor (402), an N-type semiconductor (403) and a copper conductor (404); the double-stage semiconductor radiating tube (4) is a double-stage configuration formed by embedding a P-type semiconductor (402) and an N-type semiconductor (403) into a radiating tube shell (401).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323091243.4U CN221329447U (en) | 2023-11-16 | 2023-11-16 | Double-stage semiconductor heat dissipation device of high-voltage pulse assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323091243.4U CN221329447U (en) | 2023-11-16 | 2023-11-16 | Double-stage semiconductor heat dissipation device of high-voltage pulse assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221329447U true CN221329447U (en) | 2024-07-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323091243.4U Active CN221329447U (en) | 2023-11-16 | 2023-11-16 | Double-stage semiconductor heat dissipation device of high-voltage pulse assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221329447U (en) |
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2023
- 2023-11-16 CN CN202323091243.4U patent/CN221329447U/en active Active
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