CN221325540U - Silicon wafer grinding removal measuring device - Google Patents
Silicon wafer grinding removal measuring device Download PDFInfo
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- CN221325540U CN221325540U CN202323246790.5U CN202323246790U CN221325540U CN 221325540 U CN221325540 U CN 221325540U CN 202323246790 U CN202323246790 U CN 202323246790U CN 221325540 U CN221325540 U CN 221325540U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000005259 measurement Methods 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 41
- 238000012545 processing Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model relates to a silicon wafer grinding removal amount measuring device, which comprises: the clamping structure comprises a rotating shaft and two clamping arms; the conductive reference plate is fixed on the rotating shaft, is parallel to the radial direction of the rotating shaft, and has the same distance with the two clamping arms; each clamping arm is provided with a first measuring structure, the first measuring structure comprises a conductive column movably arranged on the clamping arm, and the extending direction of the conductive column is perpendicular to the conductive reference plate; the conductive block is connected with the conductive column in a contact manner and is connected with the corresponding clamping arm; the first electrode pin is electrically connected with the conductive block, and the second electrode pin is electrically connected with the conductive reference plate; the device also comprises a current measuring instrument and a first processor, wherein the first processor is configured to obtain the grinding removal amount of the corresponding surface of the silicon wafer to be measured according to the current change amount of the conductive column. And the thicknesses of the front surface and the back surface of the silicon wafer are respectively measured, so that better flatness data of the silicon wafer are improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor product manufacturing, in particular to a silicon wafer grinding removal amount measuring device.
Background
In the processing of 300mm monocrystalline silicon wafers, the main processing steps include: growing a crystal, grinding the outer diameter of a crystal rod (ingot grinding), cutting (band saw), measuring the crystal orientation of the crystal rod, adhering a workpiece plate (ingot grinding), cutting a crystal rod by a wire saw, chamfering (EDGE GRINDING), double-sided grinding (double SIDE GRINDING), polishing (polishing), cleaning and the like. The double-sided grinding is used as an important step of the fine processing of the silicon wafer, and has important influences on the thickness, flatness, surface damage and the like of the silicon wafer. Most grinding devices use single-sided sequential processing during processing, but this approach is inefficient. Double-sided simultaneous grinding has control over the thickness as a whole, but simultaneous processing cannot be controlled individually for the thickness removal amount of both sides.
Disclosure of utility model
In order to solve the technical problems, the utility model provides a silicon wafer grinding removal measuring device which solves the problem that the thickness of a single side cannot be independently controlled by double-side grinding.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the utility model is as follows: a silicon wafer polishing removal rate measuring apparatus comprising:
The clamping structure comprises a rotating shaft and two clamping arms rotatably connected to the rotating shaft, and the two clamping arms are configured to clamp a silicon wafer to be tested;
The conductive reference plate is fixed on the rotating shaft, is positioned between the two clamping arms, is parallel to the radial direction of the rotating shaft, and has the same distance with the two clamping arms;
the first measuring structures are arranged on each clamping arm and are configured to measure the grinding removal amount of the corresponding surface of the silicon wafer to be measured;
The first measuring structure comprises conductive columns movably arranged on the corresponding clamping arms, and the extending direction of the conductive columns is perpendicular to the conductive reference plate;
The first measuring structure further comprises a conductive block in contact connection with the conductive column, and the conductive block is connected with the corresponding clamping arm;
the first measuring structure further comprises a first electrode pin electrically connected with the conductive block and a second electrode pin electrically connected with the conductive reference plate;
The first measuring structure further comprises a current measuring instrument connected with the first electrode pin and the second electrode pin;
The first measuring structure further comprises a first processor, and the first processor is configured to obtain the grinding removal amount of the corresponding surface of the silicon wafer to be measured according to the current variation amount of the conductive column.
Optionally, each clamping arm is provided with a through hole, and the conductive column is slidably arranged in the through hole.
Optionally, the side wall of the through hole is embedded with the conductive block.
Optionally, the clamping arm is multiplexed as the conductive block.
Optionally, the polishing removal amount Δx of the corresponding surface of the silicon wafer to be tested is obtained according to the following formula:
a/A＝a′/A′＝Δa/Δx＝l/L；
Δa＝a′-a
Δx＝A-A′；
The device comprises a clamping arm, a conductive reference plate, a conductive column, a clamping end, a conductive reference plate and a conductive rod, wherein a is the distance between the clamping arm and the conductive reference plate, a' is the distance between the clamping end of the clamping arm and the conductive reference plate, L is the distance between an intersection point of an extension line of the clamping arm and an extension line of the conductive reference plate and the conductive column, L is the distance between an intersection point of the extension line of the clamping arm and the extension line of the conductive reference plate and the clamping end of the clamping arm.
Optionally, the silicon wafer grinding removal amount measurement device further includes a second measurement structure configured to measure an overall grinding removal amount of the silicon wafer to be measured, the second measurement structure including:
The conductive clamping columns are arranged at the clamping ends of each clamping arm;
A resistance meter configured to measure a resistance between the two conductive clamp posts;
And the second processor is configured to convert the resistance variation between the two conductive clamping columns into the overall grinding removal amount of the silicon wafer to be tested.
The beneficial effects of the utility model are as follows: the thickness of the front surface and the back surface of the silicon wafer is respectively measured and controlled to ensure that the removal amount of the two surfaces of the silicon wafer is the same in the processing process, so that better flatness data of the silicon wafer is improved, and damaged layers on the surfaces of the two surfaces of the silicon wafer are more effectively removed.
Drawings
FIG. 1 is a schematic diagram showing the structure of a silicon wafer polishing removal amount measuring device in an embodiment of the utility model;
FIG. 2 is a schematic diagram showing the principle of measurement of the polishing removal amount of one side of a silicon wafer in an embodiment of the present utility model;
fig. 3 shows a schematic diagram of current measurement of a conductive pillar.
1, A rotating shaft; 2 clamping arms; 3 a conductive reference plate; 4, conducting columns; 5 conductive clamping columns; 6, a controller; 10 silicon wafer to be tested.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
Referring to fig. 1 to 3, a silicon wafer polishing removal quantity measuring apparatus includes:
The clamping structure comprises a rotating shaft 1 and two clamping arms 2 rotatably connected to the rotating shaft 1, wherein the two clamping arms 2 are configured to clamp a silicon wafer 10 to be tested;
A conductive reference plate 3 fixed on the rotating shaft 1, wherein the conductive reference plate 3 is positioned between the two clamping arms 2, the conductive reference plate 3 is parallel to the radial direction of the rotating shaft 1, and the distance between the conductive reference plate 3 and the two clamping arms 2 is the same;
A first measurement structure is arranged on each clamping arm 2, and the first measurement structure is configured to measure the grinding removal amount of the corresponding surface of the silicon wafer 10 to be measured;
The first measuring structure comprises conductive columns 4 movably arranged on the corresponding clamping arms 2, and the extending direction of the conductive columns 4 is perpendicular to the conductive reference plate 3;
the first measuring structure further comprises a conductive block in contact connection with the conductive column 4, and the conductive block is connected with the corresponding clamping arm 2;
The first measuring structure further comprises a first electrode pin electrically connected with the conductive block and a second electrode pin electrically connected with the conductive reference plate 3;
The first measuring structure further comprises a current measuring instrument connected with the first electrode pin and the second electrode pin;
The first measurement structure further includes a first processor configured to obtain a polishing removal amount of a corresponding surface of the silicon wafer 10 to be tested according to the current variation amounts of the conductive posts 4 before and after polishing.
The two clamping arms 2 are pivoted with the rotating shaft 1, the rotating shaft 1 is fixedly connected with the conductive reference plate 3, the conductive reference plate 3 forms a reference surface, the plane where the conductive reference plate 3 is located is parallel to the radial direction of the rotating shaft 1, the extending direction of the conductive column 4 is perpendicular to the plane where the conductive reference plate 3 is located, the conductive column 4 is fixedly connected with the conductive reference plate 3, namely, the relative positions of the conductive column 4 and the conductive reference plate 3 are unchanged, and the conductive column 4 is movably arranged on the corresponding clamping arm 2, so that the removal amount of one surface to be measured of the silicon wafer 10 corresponding to the clamping arm 2 can be obtained through the change of the length of the conductive column 4 between the clamping arm 2 and the conductive reference plate 3.
Specifically, taking one of the clamping arms 2 as an example, the surface of the silicon wafer 10 to be tested corresponding to the clamping arm 2 is a first surface, the current measuring instrument can measure the current of the conductive column 4, because the conductive block is connected with the clamping arm 2, the current measuring instrument measures the current of the first part between the conductive block and the conductive reference plate 3, so that the first processor can obtain the length of the first part before grinding and the length of the first part after grinding according to the information measured by the current measuring instrument, and the grinding removal amount of the first surface can be obtained according to the geometric principle.
It should be noted that, the current measuring apparatus may measure the current of the first portion in real time, so as to obtain the polishing removal amount of the first surface in real time, so that the removal amount of the single surface of the silicon wafer is controllable.
It should be noted that, the center line of the conductive reference plate 3 in the thickness direction is in the same plane with the radial center line of the rotating shaft 1, and after the two clamping arms 2 clamp the silicon wafer 10 to be tested, the silicon wafer is parallel to the conductive reference plate 3.
Illustratively, the first processor and the current meter are integrally provided in a controller 6, see fig. 3.
In an exemplary embodiment, each clamping arm 2 is provided with a through hole, the extending direction of the through hole is perpendicular to the conductive reference plate 3, and the conductive post 4 is slidably arranged in the through hole.
It should be noted that, the conductive post 4 is fixed on the conductive reference plate 3, and the area of the orthographic projection of the conductive post 4 on the conductive reference plate 3 is smaller than the area of the orthographic projection of the through hole on the conductive reference plate 3, so as to facilitate the sliding of the conductive post 4 relative to the through hole.
In an exemplary embodiment, the conductive block is embedded on the side wall of the through hole. The conductive block is always in contact with the conductive post 4, so that a measurement of the current of the portion of the conductive post 4 between the clamping arm 2 and the conductive reference plate 3 is achieved.
In an exemplary embodiment, the clamping arm 2 is multiplexed as the conductive block.
The whole clamping arm 2 is made of conductive materials, so that the whole structural form of the first measuring structure is simplified, and the cost is reduced.
In an exemplary embodiment, the polishing removal amount Δx of the corresponding side of the silicon wafer 10 to be tested is obtained according to the following formula:
a/A＝a′/A′＝Δa/Δx＝l/L；
Δa＝a′-a
Δx＝A-A′；
where a is the distance between the corresponding clamping arm 2 and the conductive reference plate 3 of the conductive post 4 before grinding, a 'is the distance between the corresponding clamping arm 2 and the conductive reference plate 3 of the conductive post 4 after grinding, a is the distance between the clamping end of the corresponding clamping arm 2 and the conductive reference plate 3 before grinding, a' is the distance between the clamping end of the corresponding clamping arm 2 and the conductive reference plate 3 after grinding, L is the distance between the intersection point of the extension lines of the clamping arm 2 and the extension lines of the conductive reference plate 3 and the conductive post 4, and L is the distance between the intersection point of the extension lines of the clamping arm 2 and the extension lines of the conductive reference plate 3 and the clamping end of the clamping arm 2.
Referring to fig. 2, the extension of the clamping arm 2 and the extension of the conductive reference plate 3 intersect, and it is obtainable according to the relevant geometrical principle of a triangle, a/a '=Δa/Δx=l/L, whereas a and a' are obtainable by the current meter and the first processor, the values of L and L being fixed values. The polishing removal amount Δx of the corresponding surface of the silicon wafer 10 to be tested can be obtained according to the above formula.
In an exemplary embodiment, the silicon wafer polishing removal amount measurement apparatus further includes a second measurement structure configured to measure an entire polishing removal amount of the silicon wafer 10 to be measured, the second measurement structure including:
a conductive clamping column 5 provided at a clamping end of each of the clamping arms 2;
A resistance measuring instrument configured to measure the resistance between the two conductive clamping posts 5;
And a second processor configured to convert the resistance variation between the two conductive clamping posts 5 into the overall lapping removal amount of the silicon wafer 10 to be inspected.
The second measurement structure can be used for obtaining the overall grinding removal amount of the silicon wafer 10 to be measured, and the first measurement structure can be used for respectively obtaining the grinding removal amount of each of the two opposite sides of the silicon wafer 10 to be measured. Thereby realizing the control of the thickness of one side of the silicon wafer 10 to be tested, and ensuring that the removal amount of the two sides is the same when the two sides of the silicon wafer are simultaneously ground. The better flatness data of the silicon wafer are improved, and the damaged layers on the two surfaces of the silicon wafer are removed more effectively.
The following points need to be described:
(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.
(2) In the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced for clarity, i.e., the drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
(3) The embodiments of the present disclosure and features in the embodiments may be combined with each other to arrive at a new embodiment without conflict.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present utility model, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the utility model, and are also considered to be within the scope of the utility model.
Claims (5)
1. A silicon wafer polishing removal quantity measuring device, characterized by comprising:
The clamping structure comprises a rotating shaft and two clamping arms rotatably connected to the rotating shaft, and the two clamping arms are configured to clamp a silicon wafer to be tested;
The conductive reference plate is fixed on the rotating shaft, is positioned between the two clamping arms, is parallel to the radial direction of the rotating shaft, and has the same distance with the two clamping arms;
the first measuring structures are arranged on each clamping arm and are configured to measure the grinding removal amount of the corresponding surface of the silicon wafer to be measured;
The first measuring structure comprises conductive columns movably arranged on the corresponding clamping arms, and the extending direction of the conductive columns is perpendicular to the conductive reference plate;
The first measuring structure further comprises a conductive block in contact connection with the conductive column, and the conductive block is connected with the corresponding clamping arm;
the first measuring structure further comprises a first electrode pin electrically connected with the conductive block and a second electrode pin electrically connected with the conductive reference plate;
The first measuring structure further comprises a current measuring instrument connected with the first electrode pin and the second electrode pin;
The first measuring structure further comprises a first processor, and the first processor is configured to obtain the grinding removal amount of the corresponding surface of the silicon wafer to be measured according to the current variation amount of the conductive column.
2. The apparatus according to claim 1, wherein each of the holding arms is provided with a through hole in which the conductive post is slidably provided.
3. The apparatus according to claim 2, wherein the conductive block is embedded in a sidewall of the through hole.
4. The silicon wafer polishing removal measurement device of claim 1, wherein the clamping arm is multiplexed as the conductive block.
5. The silicon wafer polishing removal quantity measurement device of claim 1, further comprising a second measurement structure configured to measure an overall polishing removal quantity of a silicon wafer to be measured, the second measurement structure comprising:
The conductive clamping columns are arranged at the clamping ends of each clamping arm;
A resistance meter configured to measure a resistance between the two conductive clamp posts;
And the second processor is configured to convert the resistance variation between the two conductive clamping columns into the overall grinding removal amount of the silicon wafer to be tested.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323246790.5U CN221325540U (en) | 2023-11-30 | 2023-11-30 | Silicon wafer grinding removal measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323246790.5U CN221325540U (en) | 2023-11-30 | 2023-11-30 | Silicon wafer grinding removal measuring device |
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| Publication Number | Publication Date |
|---|---|
| CN221325540U true CN221325540U (en) | 2024-07-12 |
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ID=91797967
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323246790.5U Active CN221325540U (en) | 2023-11-30 | 2023-11-30 | Silicon wafer grinding removal measuring device |
Country Status (1)
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| CN (1) | CN221325540U (en) |
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2023
- 2023-11-30 CN CN202323246790.5U patent/CN221325540U/en active Active
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