CN221319339U - Equipment for producing polycrystalline silicon by using pure dichlorosilane - Google Patents
Equipment for producing polycrystalline silicon by using pure dichlorosilane Download PDFInfo
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- CN221319339U CN221319339U CN202323117014.5U CN202323117014U CN221319339U CN 221319339 U CN221319339 U CN 221319339U CN 202323117014 U CN202323117014 U CN 202323117014U CN 221319339 U CN221319339 U CN 221319339U
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- Prior art keywords
- dichlorosilane
- reduction furnace
- superheater
- pure
- furnace
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 22
- 238000011084 recovery Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000012530 fluid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 239000002737 fuel gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000001257 hydrogen Substances 0.000 abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 8
- 238000007323 disproportionation reaction Methods 0.000 abstract description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 abstract description 7
- 239000005052 trichlorosilane Substances 0.000 abstract description 7
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000005049 silicon tetrachloride Substances 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract description 2
- 239000006200 vaporizer Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000004134 energy conservation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Abstract
The utility model discloses equipment for producing polycrystalline silicon by using pure dichlorosilane, which comprises a reduction furnace, wherein a superheater is arranged at the lower end position of the reduction furnace, a conveying pipeline is connected at the lower end position of the superheater, a main pipeline is arranged at the lower end position of the reduction furnace, the pure dichlorosilane is fed into the reduction furnace, the trichlorosilane is subjected to disproportionation reaction at a temperature of less than nine hundred fifty ℃ to generate dichlorosilane and silicon tetrachloride, the reaction equation is as follows, siHCl 3- & gtSiC4+SiH2Cl2, pure dichlorosilane separated by recovery and rectification is directly sent to be reduced, the dichlorosilane is gasified by a vaporizer and then is sent to be mixed with hydrogen from a tail gas recovery workshop in a static mixer, the mixture is sent to the superheater together, the mixture is further heated to the temperature required by the process, and finally hydrogen reaching the process index and the dichlorosilane enter the reduction furnace to react at a temperature of about nine hundred ℃ to generate amorphous silicon which is attached to a silicon core to grow into a finished silicon rod.
Description
Technical Field
The utility model belongs to the technical field related to equipment for producing polycrystalline silicon by using pure dichlorosilane, and particularly relates to equipment for producing polycrystalline silicon by using pure dichlorosilane.
Background
The equipment for producing polysilicon from pure dichlorosilane mainly comprises a gas-phase chlorination furnace, a gas-phase deposition furnace, a gas supply system, a control system and the like, and the equipment works cooperatively to convert the pure dichlorosilane into polysilicon through chemical reaction and deposition process, and finally obtain high-quality polysilicon products.
Along with the gradual maturity of the improved Siemens method, the main current reduction process is to feed dichlorosilane and trichlorosilane in a mixed way, but the power consumption is high due to higher reaction temperature in the reaction process, and the actual yield can only reach about 10.5 percent at maximum. And the dichlorosilane in the reduction tail gas is required to react with silicon tetrachloride through anti-disproportionation to generate trichlorosilane, and a set of anti-disproportionation device is required to be put into.
Disclosure of utility model
The utility model aims to provide a device for producing polysilicon by using pure dichlorosilane, which solves the problem that the prior art is gradually mature along with the improved Siemens method, the main current reduction process is to feed the dichlorosilane and the trichlorosilane in a mixed way, but the power consumption is high due to higher reaction temperature in the process of reaction, and the actual yield can only reach about 10.5 percent at most. And the dichlorosilane in the reduction tail gas is required to react with silicon tetrachloride through anti-disproportionation to generate trichlorosilane, and a set of anti-disproportionation device is required to be put into.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides an equipment with pure dichlorosilane production polycrystalline silicon, includes the reducing furnace, the superheater is installed to the lower extreme position department of reducing furnace, the lower extreme position department of superheater is connected with conveying line, the flowmeter is installed to conveying line's upper end position department, conveying line installs the governing valve, conveying line's the other end position department intercommunication has the jar body, the lower extreme intermediate position department of reducing furnace is connected with tail gas recovery unit, the main pipeline is installed in the lower extreme that is located right side position department of reducing furnace.
Preferably, the reduction furnace controls the temperature of the inside through a superheater.
Preferably, the superheater is configured to provide suitable heat to the material of the reduction furnace by heating and adjusting the temperature of the air or gas entering the reduction furnace.
Preferably, the superheater reduces the temperature of air or gas when the temperature inside the reduction furnace reaches a set temperature range to keep the temperature inside the reduction furnace stable.
Preferably, the tail gas recovery device collects and processes tail gas discharged from the reduction furnace.
Preferably, the flow meter measures the flow rate of the reducing furnace gas.
Preferably, the flow meter determines the flow rate by the velocity and volume of the fluid.
Preferably, the regulating valve regulates the flow of fluid in the reducing furnace to ensure the normal operation of the reducing furnace and the stability of the production process.
Compared with the prior art, the utility model provides equipment for producing polysilicon by using pure dichlorosilane, which has the following beneficial effects:
1. The invention aims to use pure dichlorosilane for feeding, trichlorosilane is subjected to disproportionation reaction at the temperature of less than nine hundred and fifty ℃ to generate dichlorosilane and silicon tetrachloride, the reaction equation is as follows, siHCl 3- & gtSiCl 4+ SiH2Cl2, pure dichlorosilane separated by recovery rectification is directly sent for reduction, the dichlorosilane is gasified by a vaporizer and then mixed with hydrogen sent from a tail gas recovery workshop in a static mixer, the mixed materials are sent to a superheater together for further heating to the temperature required by the process, and finally the hydrogen reaching the process index and the dichlorosilane enter a reduction furnace for reaction at the temperature of about nine hundred ℃ to generate amorphous silicon which is attached to a silicon core for growing into a finished silicon rod.
2. The single feed of dichlorosilane is adopted to react with hydrogen, the temperature is low, the energy conservation is facilitated, the expected power consumption can be reduced to twenty-eight kw/kg, the deposition rate of producing silicon rods from dichlorosilane is high, the expected deposition rate is one hundred eighty kg/h, and the actual yield can reach fifteen percent.
Drawings
FIG. 1 is a schematic diagram of an apparatus for producing polycrystalline silicon from pure dichlorosilane according to the present utility model.
In the figure: 1. a reduction furnace; 2. a tail gas recovery device; 3. a main pipeline; 4. a flow meter; 5. a regulating valve; 6. a delivery line; 7. a superheater; 8. a tank body.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The utility model provides equipment for producing polysilicon by using pure dichlorosilane as shown in fig. 1, which comprises a reduction furnace 1, wherein a superheater 7 is arranged at the lower end position of the reduction furnace 1, a conveying pipeline 6 is connected at the lower end position of the superheater 7, a flowmeter 4 is arranged at the upper end position of the conveying pipeline 6, a regulating valve 5 is arranged at the conveying pipeline 6, a tank body 8 is communicated at the other end position of the conveying pipeline 6, a tail gas recovery device 2 is connected at the middle position of the lower end of the reduction furnace 1, and a main pipeline 3 is arranged at the right side position of the lower end of the reduction furnace 1.
The invention is to use pure dichlorosilane to feed, trichlorosilane is subjected to disproportionation reaction at the temperature of less than nine hundred fifty ℃ to generate dichlorosilane and silicon tetrachloride, the pure dichlorosilane separated by recovery rectification is directly sent to reduction, the dichlorosilane is gasified by a carburetor and then mixed with hydrogen sent from a tail gas recovery workshop in a static mixer, the mixed materials are sent to a superheater 7 together to be further heated to the temperature required by the process, and finally the hydrogen reaching the process index and the dichlorosilane enter a reduction furnace 1 to react at the temperature of about nine hundred ℃ to generate amorphous silicon which is attached to a silicon core to grow into a finished silicon rod.
As shown in fig. 1, the reducing furnace 1 controls the internal temperature through the superheater 7, the superheater 7 heats and adjusts the temperature of air or fuel gas entering the reducing furnace 1 to provide proper heat to materials in the reducing furnace 1, the superheater 7 reduces the temperature of the air or fuel gas when the internal temperature of the reducing furnace 1 reaches a set temperature range to keep the temperature in the reducing furnace 1 stable, the tail gas recovery device 2 collects and processes the tail gas discharged from the reducing furnace 1, the flow meter 4 measures the flow rate of the gas in the reducing furnace 1, the flow meter 4 determines the flow rate through the speed and the volume of the fluid, and the regulating valve 5 regulates the flow rate of the fluid in the reducing furnace 1 to ensure the normal operation of the reducing furnace 1 and the stability of the production process.
The single feed of dichlorosilane is adopted to react with hydrogen, the temperature is low, the energy conservation is facilitated, the expected power consumption can be reduced to twenty-eight kw/kg, the deposition rate of producing silicon rods from dichlorosilane is high, the expected deposition rate is one hundred eighty kg/h, and the actual yield can reach fifteen percent.
Finally, it should be noted that: the foregoing description is only illustrative of the preferred embodiments of the present utility model, and although the present utility model has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements or changes may be made without departing from the spirit and principles of the present utility model.
Claims (8)
1. The utility model provides an equipment with pure dichlorosilane production polycrystalline silicon, its characterized in that, including reducing furnace (1), superheater (7) are installed to the lower extreme position department of reducing furnace (1), the lower extreme position department of superheater (7) is connected with conveying line (6), flowmeter (4) are installed to the upper end position department of conveying line (6), governing valve (5) are installed to conveying line (6), the other end position department intercommunication of conveying line (6) has a jar body (8), the lower extreme intermediate position department of reducing furnace (1) is connected with tail gas recovery unit (2), total pipeline (3) are installed in the lower extreme that is located right side position department of reducing furnace (1).
2. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 1, wherein: the reduction furnace (1) controls the temperature inside by means of a superheater (7).
3. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 2, wherein: the superheater (7) provides suitable heat to the material of the reduction furnace (1) by heating and adjusting the temperature of the air or gas entering the reduction furnace (1).
4. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 2, wherein: the superheater (7) reduces the temperature of air or fuel gas when the temperature inside the reduction furnace (1) reaches a set temperature range so as to keep the temperature inside the reduction furnace (1) stable.
5. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 1, wherein: the tail gas recovery device (2) collects and processes tail gas discharged by the reduction furnace (1).
6. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 1, wherein: the flowmeter (4) is used for measuring the gas flow of the reduction furnace (1).
7. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 6, wherein: the flowmeter (4) determines the flow rate by the velocity and volume of the fluid.
8. An apparatus for producing polysilicon from pure dichlorosilane as set forth in claim 1, wherein: the regulating valve (5) regulates the fluid flow in the reducing furnace (1) to ensure the normal operation of the reducing furnace (1) and the stability of the production process.
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221319339U true CN221319339U (en) | 2024-07-12 |
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| GR01 | Patent grant |