CN221007846U

CN221007846U - Novel vertical Hall effect sensor

Info

Publication number: CN221007846U
Application number: CN202322424336.8U
Authority: CN
Inventors: 杨露; 管慧; 许明峰
Original assignee: Shanghai Xinyan Microelectronics Co ltd
Current assignee: Shanghai Xinyan Microelectronics Co ltd
Priority date: 2023-09-07
Filing date: 2023-09-07
Publication date: 2024-05-24
Anticipated expiration: 2033-09-07

Abstract

The utility model discloses a novel vertical Hall effect sensor, which comprises a vertical Hall device, wherein the vertical Hall device is embedded into a third conductive area NBL, a second conductive area DNW and a first conductive area N+, welding points are arranged on the surface of a conductive well of the second conductive area DNW, the welding points are respectively A, B, C and D, and the first conductive area N+ and a P well are in a central symmetrical structure. According to the novel vertical Hall effect sensor, the effective width of the outer contact is larger than that of the inner contact by changing the doping length of the P well, namely, the shape of the P well is changed, so that the depletion region of the N-type conductive region is regulated, the influence caused by the junction field effect is reduced, the depletion region is also bilaterally symmetrical because the changed P well is still symmetrical, and when the bias voltage is smaller, compared with the traditional five-hole vertical Hall device, the novel five-hole vertical Hall device has lower bias voltage.

Description

Novel vertical Hall effect sensor

Technical Field

The utility model relates to the technical field of microelectronic integration, in particular to a novel vertical Hall effect sensor.

Background

The microelectronic integrated circuit Hall sensor has the advantages of low cost, low power consumption, high integration level, strong anti-interference capability and the like, and is widely applied to the fields of industrial control, automobiles, intelligent instruments and meters, consumer electronics and the like to realize detection of magnetic fields. In many cases, however, the magnetic field to be measured is not a single defined direction, and therefore the three-dimensional magnetic field direction must be detected using both horizontal and vertical hall devices. Compared with the horizontal Hall device, the vertical Hall device has lower magnetic field sensitivity and more serious offset.

Disclosure of utility model

In view of the foregoing deficiencies in the prior art, the present utility model provides a novel vertical hall effect sensor which is aimed at providing a low offset, high sensitivity vertical hall effect sensor.

In order to achieve the aim of the utility model, the utility model adopts the following technical scheme:

The novel vertical Hall effect sensor comprises a vertical Hall device with five contact points, wherein the vertical Hall device is embedded into a third conductive area NBL, a second conductive area DNW and a first conductive area N+, welding points are arranged on the surface of a conductive trap of the second conductive area DNW and are respectively A, B, C and D, A are positioned on the left side and the right side of the conductive trap, B, C and D are positioned between the two A and are arranged from left to right once, a P-type doped trap is embedded in the middle of each adjacent first conductive area N+, top contact points of the four P-traps are all connected together to link zero potential, the first conductive area N+ and the P-traps are in a central symmetrical structure, the C-point is used as a center and are arranged at equal intervals towards the two sides, all the traps are bilaterally symmetrical, and all the traps are vertically symmetrical;

the lengths of the first conductive regions n+ and P-well increase from the middle to the two sides and expand by a constant value K, and remain centrosymmetric.

Further, two identical novel vertical hall devices are linked in antiparallel coupling.

Further, a is linked with a C of the second vertical hall device as an output end of the bias voltage, B is linked with a D end of the second vertical hall device as one end of the hall voltage output, C is linked with an a end of the second vertical hall device as an input end of the bias voltage, and D is linked with a B end of the second device as the other end of the hall voltage.

The beneficial effects of the utility model are as follows:

According to the novel vertical Hall effect sensor, the effective width of the outer contact is larger than that of the inner contact by changing the doping length of the P well, namely the shape of the P well is changed, so that the depletion region of the N-type conductive region is regulated, and the influence caused by the junction field effect is reduced. Because the changed P well is still symmetrical, the depletion region is also symmetrical left and right, and when the bias voltage is smaller, the novel five-hole vertical Hall device has lower bias voltage compared with the traditional five-hole vertical Hall device. The novel five-hole vertical hall device exhibits higher nonlinearity when the bias voltage increases, and the offset voltage increases irregularly as the bias voltage increases. At this time, two novel five-hole vertical Hall devices are rotationally linked by adopting anti-parallel coupling 180 degrees, and a novel vertical Hall sensor with high sensitivity and low offset is obtained in a compensation mode.

Drawings

FIG. 1 is a top view of a conventional five contact hole vertical Hall device;

FIG. 2 is a schematic diagram of the junction field effect of a conventional five contact hole vertical Hall device;

FIG. 3 is a schematic top view of a novel five contact hole vertical Hall device of the present utility model;

FIG. 4 is a schematic cross-sectional structural view of a novel five contact hole vertical Hall device of the present utility model;

Fig. 5 is a schematic diagram of an antiparallel coupling structure of a novel five contact hole vertical hall device of the present utility model.

Detailed Description

Specific embodiments of the present utility model will be further described below with reference to the accompanying drawings. Wherein like parts are designated by like reference numerals.

It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings, and the words "inner" and "outer" refer to directions toward or away from, respectively, the geometric center of a particular component.

In order to make the contents of the present utility model more clearly understood, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model.

The novel vertical Hall effect sensor comprises five vertical Hall devices with five contact points, wherein the vertical Hall devices are embedded into a third conductive area NBL, a second conductive area DNW and a first conductive area N+ are arranged on the surface of a conductive trap of the second conductive area DNW, welding points are respectively A, B, C and D, A are positioned on the left side and the right side of the conductive trap, B, C and D are positioned between the two A and are arranged from left to right once, a P-type doped trap is embedded in the middle of each adjacent first conductive area N+, top contact points of the four P-traps are all connected together to link zero potential, the first conductive area N+ and the P-traps are in a central symmetrical structure, the C-point is used as a center and are arranged at equal intervals towards two sides, all the traps are bilaterally symmetrical, and all the traps are vertically symmetrical.

As shown in fig. 1, the conventional five-hole vertical hall device is affected by the junction field effect, and an irregular channel is formed.

As shown in fig. 2, a depletion layer (dotted line) is formed symmetrically and irregularly between the P-type substrate and the N-type dopant, thereby affecting the internal current capability and further affecting the offset voltage.

As shown in fig. 3, the novel vertical hall sensor adjusts the depletion region of the N-type conductive region by changing the length of the P-type doping so that the effective width of the outer contact is larger than that of the inner contact, i.e., changing the shape of the P-well, thereby reducing the influence caused by the junction field effect. Since the modified P-well is still symmetric, the depletion region is also symmetric left and right.

As shown in fig. 4, an NBL buried conductive layer is added compared to a conventional five contact hole. The depth of the N-type conductive well is increased, so that the larger the place where the magnetic field passes, the sensitivity of the device is increased.

As shown in fig. 5, two identical novel vertical hall devices are coupled and linked in anti-parallel, a is linked with a C of a second vertical hall device and is used as an output end of a bias voltage, B is linked with a D end of the second vertical hall device and is used as one end of a hall voltage output, C is linked with an a end of the second vertical hall device and is used as an input end of the bias voltage, and D is linked with a B end of the second vertical hall device and is used as the other end of the hall voltage.

When the bias voltage is smaller, the novel five-hole vertical Hall device has lower bias voltage compared with the traditional five-hole vertical Hall device. The novel five-hole vertical hall device exhibits higher nonlinearity when the bias voltage increases, and the offset voltage increases irregularly as the bias voltage increases. At this time, we adopt anti-parallel coupling 180 DEG rotary link two novel five-hole vertical Hall devices, and then a novel vertical Hall sensor with high sensitivity and low offset can be obtained by a compensation mode.

The above description is illustrative of the preferred embodiments of the present utility model and is not intended to limit the scope of the present utility model, but is to be accorded the full scope of the claims.

Claims

1. The novel vertical Hall effect sensor is characterized by comprising five vertical Hall devices with five contact points, wherein the vertical Hall devices are embedded into a third conductive area NBL, a second conductive area DNW and a first conductive area N+, welding points are arranged on the surface of a conductive trap of the second conductive area DNW and are respectively A, B, C and D, A are positioned on the left side and the right side of the conductive trap, B, C and D are positioned between the two A and are arranged from left to right once, a P-type doped trap is embedded in the middle of each adjacent first conductive area N+, top contact points of the four P traps are all connected together to link zero potential, the first conductive area N+ and the P traps are in a central symmetrical structure, the C point is used as the center, the two sides of the first conductive area DNW are arranged at equal intervals, all the traps are bilaterally symmetrical, and all the traps are vertically symmetrical;

2. A novel vertical hall effect sensor according to claim 1, wherein: two identical novel vertical hall devices are linked in antiparallel coupling.

3. A novel vertical hall effect sensor according to claim 2, wherein: a is linked with the C of the second vertical Hall device and is used as the output end of the bias voltage, B is linked with the D end of the second vertical Hall device and is used as one end of the Hall voltage output, C is linked with the A end of the second vertical Hall device and is used as the input end of the bias voltage, and D is linked with the B end of the second device and is used as the other end of the Hall voltage.