CN220672575U - Stacked packaging structure of switching power device - Google Patents
Stacked packaging structure of switching power device Download PDFInfo
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- CN220672575U CN220672575U CN202321763967.6U CN202321763967U CN220672575U CN 220672575 U CN220672575 U CN 220672575U CN 202321763967 U CN202321763967 U CN 202321763967U CN 220672575 U CN220672575 U CN 220672575U
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- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 238000001816 cooling Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The utility model provides a laminated packaging structure of a switching power device, which comprises the following components: the power electrodes are arranged in a laminated mode, and adjacent layers are connected through connecting plates; the chip, several chips are mounted on the power electrode of the bottom or middle part, the side of the chip has signal electrodes to mount on power electrode; the chip is connected with the power electrode through a power wire, and the chip is connected with the signal electrode through a signal wire. The DC+ phase, the AC phase and the DC-phase are vertically arranged, and the current path is shorter, so that parasitic parameters such as stray inductance, lead resistance and the like are smaller, and the electrical performance of the system is better; the whole structure is more compact and the size is smaller; the signal terminal and the power terminal are led out from two sides and are not interfered with each other; the alternating current phase is clamped between the two parallel large plates DC+ and DC-, which is also beneficial to the anti-interference of signals, and the system has better anti-interference performance.
Description
Technical Field
The utility model relates to a stacked packaging structure of a switching power device.
Background
In the switch power device in the prior art, chips of the power device are horizontally arranged, as shown in fig. 2, a plastic frame of the switch power device is riveted on a bottom plate through rivets, a power terminal and a signal terminal are integrally fixed on the plastic frame through injection molding, a ceramic copper-clad plate is fixed on the bottom plate through soldering, an IGBT (insulated gate bipolar transistor) or MOS (metal oxide semiconductor) chip and a fast recovery diode chip are fixed on the ceramic copper-clad plate through soldering, and bonding wires are used for interconnection between electrodes. The cover plate is fixed with the plastic frame in a buckling mode.
Because the DC+, DC-, U, V, W electrodes are arranged in a plane, and the electrodes are connected through wires, as shown in fig. 2, the U-phase upper bridge converter loop is an upward arrow line, the U-phase lower bridge converter loop is a downward arrow line, the path of the whole loop can be seen to be far, the stray inductance and the lead resistance of the system are larger, and further the dynamic performance of the system is poorer and the lead loss is larger. The arrangement of the whole plane leads to that the electric loop must travel in a long or wide direction, and the space in the up-down direction is not utilized, so that the path must be long. Because the current specification of a single chip is lower than 300A, the IGBT or MOS module products with large current specifications need to be connected in parallel by multiple chips, so that the large-specification products are large in length-width ratio, low in height and low in space utilization rate and are not compact enough. In a multilayer power device stack package structure, for example, CN208923094U, power chips are respectively fixed on a multilayer substrate in a stack arrangement, but the substrate only plays a role of carrying the chips, and the power terminals are realized by other structures, which results in a complex structure of the substrate.
Disclosure of Invention
In order to solve the technical problems, the utility model provides a stacked packaging structure of a switching power device.
The utility model is realized by the following technical scheme.
The utility model provides a laminated packaging structure of a switching power device, which comprises the following components:
the power electrodes are arranged in a laminated mode, and adjacent layers are connected through connecting plates;
the chip, several chips are mounted on the power electrode of the bottom or middle part, the side of the chip has signal electrodes to mount on power electrode;
the chip is connected with the power electrode through a power wire, and the chip is connected with the signal electrode through a signal wire.
The power electrode comprises a DC-phase electrode, a U-phase electrode, a V-phase electrode, a W-phase electrode and a DC+ phase electrode;
the U-phase electrode, the V-phase electrode and the W-phase electrode are arranged on the same layer, isolation plates are arranged on the upper end surfaces of the U-phase electrode, the V-phase electrode and the W-phase electrode, the upper end surfaces of the isolation plates are respectively connected with DC-through connecting plates, and isolation plates are arranged among the U-phase electrode, the V-phase electrode, the W-phase electrode and the connecting plates;
the lower end surfaces of the U-phase electrode, the V-phase electrode and the W-phase electrode are respectively connected with the DC+ phase electrode through connecting plates, and a separation plate is arranged between the DC+ phase electrode and the connecting plates.
The connecting plate is concave, and the bottom is connected with the isolation plate.
The chips are respectively provided with three groups corresponding to the U-phase electrode, the V-phase electrode and the W-phase electrode, two chips in each group are arranged on the U-phase electrode, the V-phase electrode or the W-phase electrode, and two chips are correspondingly arranged on the DC+ phase electrode and below the U-phase electrode, the V-phase electrode or the W-phase electrode.
The chips are connected with the middle parts of the adjacent connecting plates respectively through power wires.
The chips arranged at the same position are connected through signal wires, and the signal wires are also connected with the signal electrodes.
The signal electrodes are respectively fixed at the edges of the U-phase electrode, the V-phase electrode, the W-phase electrode and the DC+ phase electrode, and PIN needles are arranged on the outer walls of the signal electrodes.
The DC-phase electrode, the U-phase electrode, the V-phase electrode, the W-phase electrode and the DC+ phase electrode are processed with vertical bends on edges opposite to the edges where the signal electrodes are arranged, and through holes are processed on the bends.
And cooling plates are arranged on the lower end surfaces of the U-phase electrode, the V-phase electrode, the W-phase electrode and the DC+ phase electrode.
The whole device is filled by curing and wrapping insulating plastic, and the bending parts of the PIN needle, the DC-phase electrode, the U-phase electrode, the V-phase electrode, the W-phase electrode and the DC+ phase electrode are exposed.
The utility model has the beneficial effects that: the DC+ phase, the AC phase and the DC-phase are vertically arranged, and the current path is shorter, so that parasitic parameters such as stray inductance, lead resistance and the like are smaller, and the electrical performance of the system is better; the whole structure is more compact and the size is smaller; in addition, the whole package is finally solidified in a potting or injection molding mode, so that the reliability is high; the signal terminal and the power terminal are led out from two sides and are not interfered with each other; meanwhile, the alternating current phase is clamped between the two parallel large plates DC+ and DC-, which is also beneficial to the anti-interference of signals, so that the anti-interference performance of the system is better. And moreover, each unit can be designed into a completely consistent structure, so that the consistency of the electrical performance of each unit is facilitated, and the reliability is higher.
Drawings
FIG. 1 is a schematic diagram of a stacked package structure of a power device of the present utility model;
FIG. 2 is a schematic diagram of a conventional power device package structure;
in the figure: 1-DC-phase electrode, 2-U phase electrode, 3-V phase electrode, 4-W phase electrode, 5-DC+ phase electrode, 6-PIN needle, 7-connecting plate, 8-signal electrode, 9-cooling plate, 10-power wire, 11-chip, 12-signal wire, 13-isolation plate.
Detailed Description
The technical solution of the present utility model is further described below, but the scope of the claimed utility model is not limited to the above.
A stacked package structure of a switching power device, comprising:
the power electrodes are arranged in a laminated mode, and adjacent layers are connected through a connecting plate 7;
the chip 11, several chips 11 are mounted on the power electrode of the bottom or middle part, the side of chip 11 has signal electrode 8 to mount on power electrode;
the chip 11 is connected with the power electrode through a power wire 10, and the chip 11 is connected with the signal electrode 8 through a signal wire 12.
The power electrode comprises a DC-phase electrode 1, a U-phase electrode 2, a V-phase electrode 3, a W-phase electrode 4 and a DC+ phase electrode 5;
the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4 are arranged on the same layer, the upper end surfaces of the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4 are respectively provided with a separation plate 13, the upper end surfaces of the separation plates 13 are respectively connected with the DC-phase electrode 1 through a connecting plate 7, and the separation plates 13 are arranged among the U-phase electrode 2, the V-phase electrode 3, the W-phase electrode 4 and the connecting plate 7;
the lower end surfaces of the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4 are respectively connected with the DC+ phase electrode 5 through a connecting plate 7, and a separation plate 13 is arranged between the DC+ phase electrode 5 and the connecting plate 7.
As shown in fig. 1, the dc+ phase electrode 5 is located at the lowest side, is a large whole plate, is bent at a right angle on the side surface, is provided with a hole, and is provided with a nut at the inner side for wiring; the upper side of the DC+ phase electrode 5 is sintered with a chip 11, and the lower side of the chip 11 is provided with a collector electrode which is communicated with the DC+ phase electrode 5; the upper side of the DC+ phase electrode 5 is sintered with a connecting plate 7 and a signal electrode 8, and the middle is isolated by an insulating material, which is generally a ceramic material; the emitter of the chip 11 is connected to the connecting plate 7 through a power wire 10, the upper side of the connecting plate 7 is respectively connected with the lower sides of the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4, and gaps are reserved among the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4 and are not conducted; the grid of the chip 11 is connected to the signal electrode 8 through the signal wire 12, the PIN needle 6 is sintered on the signal electrode 8 respectively, the signal electrode 8 is connected with the circuit board respectively, the PIN needle 6 is used for externally connecting with the grid and emitter signals of the power device in the circuit board; the structure of one unit is described above, and the other unit structures are the same as the above; a cooling plate 9 is arranged under each phase of electrode and is isolated from the cooling plate by insulating materials; the whole module is solidified by plastic body 13, and only the signal terminal, the power terminal and the water inlet and return connection port of the cooling plate are led out. The cooling plate can be provided with holes or can be provided with no holes, and the holes can be used for circulating liquid so as to realize liquid cooling; the hole-free structure can be connected with a radiating plate with a larger outer side so as to achieve the radiating effect.
The connecting plate 7 is concave, the bottom is connected with the isolation plate 13, the support of the laminated structure is realized through the connecting plate, and the connecting plate is used as a conducting device between adjacent layers, so that the complexity and the size of the packaging structure are greatly reduced.
The chips 11 are respectively provided with three groups corresponding to the U-phase electrode 2, the V-phase electrode 3 and the W-phase electrode 4, two chips 11 in each group are arranged on the U-phase electrode 2 or the V-phase electrode 3 or the W-phase electrode 4, two chips 11 are correspondingly arranged on the DC+ phase electrode 5 and below the U-phase electrode 2 or the V-phase electrode 3 or the W-phase electrode 4, each group of chips forms an alternating current phase power circuit, the three groups of chips form a three-phase alternating current phase power circuit, each group of chips are vertically arranged, and the three groups of chips have the same structure, are beneficial to the consistency of the electrical performance of each unit, and further have higher reliability.
The chips 11 are connected to the middle parts of the adjacent connecting plates 7 through power wires 10 respectively, and pass through the connecting plates 7.
The chips 11 mounted at the same position are connected by signal wires 12, and the signal wires 12 are also connected with the signal electrodes 8.
The signal electrode 8 is respectively fixed at the edges of the U-phase electrode 2, the V-phase electrode 3, the W-phase electrode 4 and the DC+ phase electrode 5, and the PIN needle 6 is arranged on the outer wall of the signal electrode 8.
The DC-phase electrode 1, the U-phase electrode 2, the V-phase electrode 3, the W-phase electrode 4 and the DC+ phase electrode 5 are provided with vertical bends at the edges opposite to the mounting signal electrode 8, and through holes are formed on the bends.
The lower end surfaces of the DC-phase electrode 1, the U-phase electrode 2, the V-phase electrode 3, the W-phase electrode 4 and the DC+ phase electrode 5 are respectively provided with a cooling plate 9. The cooling plate can be water-cooled or air-cooled, and the two ends of the cooling plate are respectively provided with an inlet and an outlet, and circulating air or water is introduced to take away heat generated by the corresponding electrode.
The whole device is filled by solidifying and wrapping insulating plastic, and the PIN needle 6, the bending parts of the DC-phase electrode 1, the U-phase electrode 2, the V-phase electrode 3, the W-phase electrode 4 and the DC+ phase electrode 5 and the water inlet and return connectors of the cooling plate are led out, so that the whole insulating property, the shock resistance and the reliability of the device are high.
Claims (10)
1. A stacked package structure of a switching power device, comprising:
the power electrodes are arranged in a laminated mode, and adjacent layers are connected through connecting plates (7);
the chip (11), several chips (11) are installed on the power electrode of the bottom or middle part, there are signal electrodes (8) to install on power electrode on the side of the chip (11);
the chip (11) is connected with the power electrode through a power wire (10), and the chip (11) is connected with the signal electrode (8) through a signal wire (12).
2. The stacked package structure of a switching power device of claim 1, wherein: the power electrode comprises a DC-phase electrode (1), a U-phase electrode (2), a V-phase electrode (3), a W-phase electrode (4) and a DC+ phase electrode (5);
the U-phase electrode (2), the V-phase electrode (3) and the W-phase electrode (4) are arranged on the same layer, isolation plates (13) are arranged on the upper end faces of the U-phase electrode (2), the V-phase electrode (3) and the W-phase electrode (4), the upper end faces of the isolation plates (13) are respectively connected with the DC-phase electrode (1) through connecting plates (7), and isolation plates (13) are arranged among the U-phase electrode (2), the V-phase electrode (3), the W-phase electrode (4) and the connecting plates (7);
the lower end surfaces of the U-phase electrode (2), the V-phase electrode (3) and the W-phase electrode (4) are respectively connected with the DC+ phase electrode (5) through a connecting plate (7), and a separation plate (13) is arranged between the DC+ phase electrode (5) and the connecting plate (7).
3. The stacked package structure of a switching power device of claim 2, wherein: the connecting plate (7) is concave, and the bottom is connected with the isolation plate (13).
4. The stacked package structure of a switching power device of claim 1, wherein: the three groups of chips (11) are respectively arranged corresponding to the U-phase electrode (2), the V-phase electrode (3) and the W-phase electrode (4), two chips (11) in each group are arranged on the U-phase electrode (2) or the V-phase electrode (3) or the W-phase electrode (4), and two chips (11) are correspondingly arranged on the DC+ phase electrode (5) and below the U-phase electrode (2) or the V-phase electrode (3) or the W-phase electrode (4).
5. The stacked package structure of a switching power device of claim 4, wherein: the chips (11) are connected with the middle parts of the adjacent connecting plates (7) through power wires (10).
6. The stacked package structure of a switching power device of claim 4, wherein: the chips (11) arranged at the same position are connected through signal wires (12), and the signal wires (12) are also connected with the signal electrodes (8).
7. The stacked package structure of a switching power device of claim 6, wherein: the signal electrode (8) is respectively fixed at the edges of the U-phase electrode (2), the V-phase electrode (3), the W-phase electrode (4) and the DC+ phase electrode (5), and the PIN needle (6) is arranged on the outer wall of the signal electrode (8).
8. The stacked package structure of a switching power device of claim 2, wherein: the DC-phase electrode (1), the U-phase electrode (2), the V-phase electrode (3), the W-phase electrode (4) and the DC+ phase electrode (5) are vertically bent at the edge opposite to the signal electrode (8), and through holes are formed in the bent edges.
9. The stacked package structure of a switching power device of claim 8, wherein: and cooling plates (9) are arranged on the lower end surfaces of the DC-phase electrode (1), the U-phase electrode (2), the V-phase electrode (3), the W-phase electrode (4) and the DC+ phase electrode (5).
10. The stacked package structure of a switching power device of claim 1, wherein: the whole device is filled by plastic solidification package, and bending parts of the PIN needle (6), the DC-phase electrode (1), the U-phase electrode (2), the V-phase electrode (3), the W-phase electrode (4) and the DC+ phase electrode (5) are exposed outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321763967.6U CN220672575U (en) | 2023-07-06 | 2023-07-06 | Stacked packaging structure of switching power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321763967.6U CN220672575U (en) | 2023-07-06 | 2023-07-06 | Stacked packaging structure of switching power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220672575U true CN220672575U (en) | 2024-03-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321763967.6U Active CN220672575U (en) | 2023-07-06 | 2023-07-06 | Stacked packaging structure of switching power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220672575U (en) |
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2023
- 2023-07-06 CN CN202321763967.6U patent/CN220672575U/en active Active
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