CN220629309U - High-frequency amplifier, radio frequency chip and radar - Google Patents
High-frequency amplifier, radio frequency chip and radar Download PDFInfo
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Abstract
The utility model provides a high-frequency amplifier, a radio frequency chip and a radar. The high frequency amplifier includes: the first transistor, wherein the drain electrode and the source electrode of the power supply are grounded through the first transistor, the grid electrode of the first transistor is connected with the input end of the high-frequency amplifier through a first LC structure, and the drain electrode of the first transistor is connected with the output end of the high-frequency amplifier through a waveguide structure and a second LC structure; and an RC feedback circuit having a first end connected to the gate of the first transistor and a second end connected to the drain of the first transistor via the waveguide structure. By adopting the configuration, the utility model can reduce the quality factor of the output impedance of the output end of the amplifier by configuring the waveguide structure parameter which is suitable for the circuit parameter of the amplifier under the condition that the input and output impedance matching of the amplifier is not affected, so as to improve the high-frequency gain of the amplifier.
Description
Technical Field
The present utility model relates to the field of radio frequency communications technologies, and in particular, to a high frequency amplifier, a radio frequency chip, and a radar.
Background
An Amplifier (Amplifier) is an electronic device for amplifying the voltage or power of an input signal, and is composed of a power supply, a transistor and other electronic components, and is widely used in various technical fields such as communication, broadcasting, radar, television, automatic control and the like. However, since the maximum gain of the CMOS transistor gradually decreases as the operating frequency increases, when the operating frequency increases to the Ka band (26.5 GHz-40 GHz), it is often difficult to achieve a higher gain by the conventional CMOS amplifier circuit, and thus it is difficult to meet the high gain requirement of the radio frequency (especially the Ka band) device.
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for an amplification technique of a radio frequency signal for improving the high frequency gain of an amplifier without affecting the input/output impedance matching of the amplifier.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the defects in the prior art, the utility model provides a high-frequency amplifier, a radio frequency chip and a radar, which can reduce the quality factor of the output impedance of an output end of the amplifier by configuring the waveguide structure parameters adapting to the circuit parameters of the amplifier under the condition that the input-output impedance matching of the amplifier is not affected, so as to improve the high-frequency gain of the amplifier.
Specifically, the high-frequency amplifier provided according to the first aspect of the present utility model includes a first transistor and an RC feedback circuit. The power supply is grounded via the drain and source of the first transistor. The gate of the first transistor is connected to the input of the high frequency amplifier via a first LC structure. The drain electrode of the first transistor is connected with the output end of the high-frequency amplifier through a waveguide structure and a second LC structure. The first end of the RC feedback circuit is connected with the grid electrode of the first transistor, and the second end of the RC feedback circuit is connected with the drain electrode of the first transistor through the waveguide structure.
Further, in some embodiments of the utility model, the high frequency amplifier further comprises at least one second transistor. The drain electrode of the first transistor is connected with the source electrode of the second transistor. The power supply is grounded via the drain and source of the second transistor and the drain and source of the first transistor. The gate of the first transistor is connected to the input of the high frequency amplifier via the first LC structure. The gate of the second transistor is grounded. The drain electrode of the second transistor is connected with the output end of the high-frequency amplifier through the waveguide structure and the second LC structure. The first end of the RC feedback circuit is connected with the grid electrode of the first transistor, and the second end of the RC feedback circuit is connected with the drain electrode of the second transistor through the waveguide structure.
Further, in some embodiments of the utility model, the waveguide structure comprises coplanar waveguide lines and/or microstrip lines.
Further, in some embodiments of the present utility model, the high frequency amplifier further includes a third inductor and a fourth inductor. The source of the first transistor is grounded via the third inductor. The power supply is connected to the waveguide structure via the fourth inductance.
Further, in some embodiments of the utility model, the high frequency amplifier further comprises at least one fifth inductance connected in series. The waveguide structure is connected to the fourth inductance and the second LC structure via the at least one serially connected fifth inductance, respectively.
Further, in some embodiments of the present utility model, the fifth inductor includes a metal coil provided in at least two layers of circuit structures. The first end of the first coil arranged on the first circuit structure is arranged close to the transistor and is connected with the waveguide structure. The second end of the second coil arranged on the second circuit structure is far away from the transistor and is connected with the fourth inductor and the second LC structure. The second end of the first coil is connected to the first end of the second coil via at least one through-layer via. The RC feedback circuit is arranged close to the transistor, and the second end of the RC feedback circuit is closely connected with the second coil through a wire arranged on the second circuit structure.
Further, in some embodiments of the utility model, the waveguide structure comprises at least one waveguide unit. The second end of the RC feedback circuit is connected with the drain electrode of the second transistor through n waveguide units and m fifth inductors. The number n of the waveguide units and the number m of the fifth inductors are based on the total impedance value jZ (omega) of the waveguide structure and the fifth inductors, and the unit inductance value L of the waveguide units 0 Unit capacitance value C 0 Unit resistance value R 0 And the inductance value L of the fifth inductance 5 And (5) determining.
Further, in some embodiments of the present utility model, the center frequency point f is located in the Ka band.
Further, the radio frequency chip provided according to the second aspect of the present utility model includes the high frequency amplifier provided according to the first aspect of the present utility model.
Further, the above radar provided according to the third aspect of the present utility model includes the above high-frequency amplifier provided according to the first aspect of the present utility model.
Drawings
The above features and advantages of the present utility model will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
Fig. 1A illustrates a circuit topology of a high frequency amplifier provided in accordance with some embodiments of the utility model.
Fig. 1B shows an equivalent circuit topology of the high frequency amplifier shown in fig. 1A of the present utility model.
Fig. 1C shows a simplified schematic diagram of an equivalent circuit of the high frequency amplifier shown in fig. 1B of the present utility model.
Fig. 2A shows a circuit topology of a high frequency amplifier provided according to some reference examples of the present utility model.
Fig. 2B shows an equivalent circuit topology of the high frequency amplifier shown in fig. 2A of the present utility model.
Fig. 2C shows a simplified schematic diagram of an equivalent circuit of the high frequency amplifier shown in fig. 2A of the present utility model.
Fig. 3 illustrates a circuit topology of a waveguide structure provided in accordance with some embodiments of the present utility model.
Fig. 4 illustrates a circuit layout design of a high frequency amplifier provided in accordance with some embodiments of the present utility model.
Fig. 5 illustrates a circuit layout design of a high frequency amplifier provided in accordance with some embodiments of the present utility model.
Fig. 6 illustrates a circuit layout design of a high frequency amplifier provided in accordance with some embodiments of the present utility model.
Fig. 7 illustrates a schematic diagram of an inductor provided in accordance with some embodiments of the present utility model.
Fig. 8A illustrates a voltage gain graph provided in accordance with some embodiments of the utility model.
Fig. 8B illustrates an input standing wave plot provided in accordance with some embodiments of the utility model.
Fig. 8C illustrates an output standing wave plot provided in accordance with some embodiments of the utility model.
Fig. 9 shows a circuit topology of a high frequency amplifier provided according to further embodiments of the present utility model.
Detailed Description
Further advantages and effects of the present utility model will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present utility model with specific examples. While the description of the utility model will be presented in connection with alternative embodiments, it is not intended to limit the inventive features to only this embodiment. Rather, the purpose of the utility model described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the utility model. The following description contains many specific details for the purpose of providing a thorough understanding of the present utility model. The utility model may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the utility model.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the utility model as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present utility model.
As described above, since the maximum gain of the CMOS transistor gradually decreases as the operating frequency increases, when the operating frequency increases to the Ka band (26.5 GHz to 40 GHz), it is often difficult for the conventional CMOS amplifier circuit to achieve a higher gain, and thus it is difficult to satisfy the high gain requirement of the radio frequency (especially the Ka band) device.
In order to overcome the defects in the prior art, the utility model provides a high-frequency amplifier, a radio frequency chip and a radar, which can reduce the quality factor of the output impedance of an output end of the amplifier by configuring the waveguide structure parameters adapting to the circuit parameters of the amplifier under the condition that the input-output impedance matching of the amplifier is not affected, so as to improve the high-frequency gain of the amplifier.
In some non-limiting embodiments, the high frequency amplifier provided in the first aspect of the present utility model may be configured to be implemented in the radio frequency chip provided in the second aspect of the present utility model. Further, the radio frequency chip provided in the second aspect of the present utility model may be configured to be implemented in the radar provided in the third aspect of the present utility model.
Referring specifically to fig. 1A, fig. 1A illustrates a circuit topology of a high frequency amplifier provided in accordance with some embodiments of the present utility model.
In the embodiment shown in fig. 1A, the high-frequency amplifier provided by the present utility model may be configured with at least two transistors M 1 ～M 2 And an RC feedback circuit. Here, a first transistor M 1 Is connected with the second transistor M 2 Source of (V), power supply V DD1 Sequentially via the second transistor M 2 Drain and source of (a) and first transistor M 1 The drain and the source of the transistor are grounded to form a transistor structure of a common source and a common gate, and the output impedance Z is improved out 。
Further, the first transistor M 1 The gate of which is connected to the input terminal V of the high-frequency amplifier via a first LC structure IN Wherein the first LC structure is composed of a first inductance L 1 First capacitor C 1 Composition is prepared. The second transistor M 2 The gate of (2) is grounded. The second transistor M 2 The drain of (a) is connected to the output terminal V of the high frequency amplifier via a waveguide structure jZ (ω) and a second LC structure OUT Wherein the second LC structure is composed of a second inductance L 2 Second capacitor C 2 Composition is prepared. The RC feedback circuit consists of a first resistor R 1 Third capacitor C 3 Composition of, itA first end connected to the first transistor M 1 And its second end is connected to the second transistor M via a waveguide structure jZ (ω) 2 Is formed on the drain electrode of the transistor.
In addition, as shown in fig. 1A, the high-frequency amplifier provided by the utility model may further be provided with a third inductor L 3 Fourth inductance L 4 . First transistor M 1 Can be connected with the source of the third inductor L 3 And (5) grounding. Power supply V DD1 Can pass through the fourth inductance L 4 The waveguide structure jZ (ω) is connected to the second transistor M via the waveguide structure jZ (ω) 2 Is formed on the drain electrode of the transistor.
Thus by the second transistor M 2 The utility model can reduce the quality factor Q of the output impedance of the output end of the amplifier by configuring the waveguide structure parameters adapting to the circuit parameters of the amplifier under the condition of not influencing the matching of the input and output impedance of the amplifier, thereby effectively improving the voltage gain A of the amplifier in the radio frequency band (especially the Ka band of 26.5 GHz-40 GHz) v 。
Please refer to fig. 1B and fig. 1C. Fig. 1B shows an equivalent circuit topology of the high frequency amplifier shown in fig. 1A of the present utility model. Fig. 1C shows a simplified schematic diagram of an equivalent circuit of the high frequency amplifier shown in fig. 1A of the present utility model.
By connecting the first transistor M in FIG. 1A 1 Is defined as gm, the first transistor M 1 Is defined as C 4 First transistor M 1 Second transistor M 2 The equivalent total gate-to-source capacitance of (C) is defined as C 5 And the first transistor M 1 Source to second transistor M 2 The equivalent on-state total impedance of the drain electrode of (2) is defined as R 2 And the center frequency point of the high-frequency amplifier operation is defined as f, the equivalent circuit topology of the high-frequency amplifier shown in fig. 1B can be obtained.
By further incorporating into the RC feedback circuit of FIG. 1A a first resistor R 1 Third capacitor C 3 Equivalent meansIs of a first impedance Z 1 First transistor M 1 Second transistor M 2 Second resistance R of (2) 2 Equivalent total capacitance C 5 Equivalent to a second impedance Z 2 First transistor M 1 Gate-source capacitance C of (2) 4 Equivalent to third impedance Z 3 Third inductance L 3 Equivalent to fourth impedance Z 4 Equivalent of the waveguide structure jZ (ω) as a fifth impedance Z 5 And the first transistor M 1 Current amplification factor of (2)Denoted a, a simplified schematic of the high frequency amplifier shown in fig. 1C may be obtained.
The simplified circuit of the high frequency amplifier shown in fig. 1C is then described by using the following equation
The output impedance Z of the amplifier circuit is obtained out1 ：
Still later, by developing the output impedance Z according to FIG. 1B out1 Expression (2) of (2) can be obtained:
wherein jZ (ω) is the impedance of the waveguide structure and gm is the first transistor M 1 R, R 1 For the resistance value of the first resistor in the RC feedback circuit, R 2 For the first transistor M 1 Source to second transistor M 2 The equivalent conduction total impedance of the drain electrode of C 3 C is the capacitance value of the third capacitor in the RC feedback circuit 4 For the first transistor M 1 Gate-source capacitance of C 5 To be the first transistor M 1 Second transistor M 2 Equivalent total capacitance from gate to source, L 3 The inductance value of the third inductor.
In addition, please refer to fig. 2A to 2C in combination. Fig. 2A shows a circuit topology of a high frequency amplifier provided according to some reference examples of the present utility model. Fig. 2B shows an equivalent circuit topology of the high frequency amplifier shown in fig. 2A of the present utility model. Fig. 2C shows a simplified schematic diagram of an equivalent circuit of the high frequency amplifier shown in fig. 2A of the present utility model.
In the reference example shown in fig. 2A, the second transistor M 2 A fifth inductor L with inductance is arranged at the drain electrode of the capacitor 5 And through the fifth inductance L 5 And the second LC structure is connected with the output end V of the high-frequency amplifier OUT . However, the difference from the high frequency amplifier circuit shown in FIG. 1A of the present utility model is that the third capacitance C of the RC feedback circuit 3 Is directly connected to the second transistor M 2 Is formed on the drain electrode of the transistor.
By connecting the first transistor M in FIG. 2A 1 Is defined as gm, the first transistor M 1 Is defined as C 4 First transistor M 1 Second transistor M 2 The equivalent total gate-to-source capacitance of (C) is defined as C 5 And the first transistor M 1 Source to second transistor M 2 The equivalent on-state total impedance of the drain electrode of (2) is defined as R 2 And the center frequency point of the high-frequency amplifier operation is defined as f, the equivalent circuit topology of the high-frequency amplifier shown in fig. 1B can be obtained.
By further incorporating into the RC feedback circuit of FIG. 2A a first resistor R 1 Third capacitor C 3 Equivalent to first impedance Z 1 First transistor M 1 Second transistor M 2 Second resistance R of (2) 2 Equivalent total capacitance C 5 Equivalent to a second impedance Z 2 First transistor M 1 Gate-source capacitance C of (2) 4 Equivalent to third impedance Z 3 Third inductance L 3 Equivalent to fourth impedance Z 4 Fifth inductance L 5 Equivalent to a fifth impedance Z 5 And the first crystalTube M 1 Current amplification factor of (2)Denoted a, a simplified schematic of the high frequency amplifier shown in fig. 2C may be obtained.
The simplified circuit of the high frequency amplifier shown in fig. 2C will be described later by using the following equation
The output impedance Z of the amplifier circuit is obtained out2 ：
Still later, by developing the output impedance Z according to FIG. 2B out2 Expression (5) of (2) can be obtained:
wherein jZ (ω) is the impedance of the waveguide structure and gm is the first transistor M 1 R, R 1 For the resistance value of the first resistor in the RC feedback circuit, R 2 For the first transistor M 1 Source to second transistor M 2 The equivalent conduction total impedance of the drain electrode of C 3 C is the capacitance value of the third capacitor in the RC feedback circuit 4 For the first transistor M 1 Gate-source capacitance of C 5 To be the first transistor M 1 Second transistor M 2 Equivalent total capacitance from gate to source, L 3 The inductance value of the third inductor.
By comparing the output impedance Z of the embodiment shown in FIG. 1A out1 And the output impedance Z of the reference example shown in FIG. 2A out2 It can be seen that the above-mentioned amplification is provided by the present utility model compared with a circuit structure in which the drain of the transistor is directly connected to the RC feedback circuit and the output of the amplifierThe device structure can simultaneously output impedance Z out The inductive parameter jZ (omega) is introduced into the numerator and denominator of (a), thereby improving the output impedance Z by setting a reasonable inductive parameter jZ (omega) out And by setting sL 3 To limit the output impedance Z out To reduce Z out Quality factor Q of (a).
Referring further to fig. 3, fig. 3 illustrates a circuit topology of a waveguide structure provided in accordance with some embodiments of the present utility model.
In the embodiment shown in fig. 3, the waveguide structure optionally includes at least one waveguide having a unit inductance value L 0 The unit capacitance value is C 0 The unit resistance value is R 0 To more flexibly configure the output impedance Z out The inductive parameter jZ (omega) introduced in the numerator and denominator of (a) to obtain a more accurate voltage gain a v . Here, the unit inductance value L of each waveguide unit 31 0 Unit capacitance value C 0 Unit resistance value R 0 May be determined by the unit wavelength typical of the waveguide structure.
For example, for a coil consisting of 7 inductance units L 0 =50 pH, unit capacitance C 0 =4ff, unit resistance value R 0 Coplanar waveguide line composed of waveguide units 31 of =2Ω, assuming transistor M 1 Transconductance g of (2) m =150ms, gate-source capacitance C 4 100fF, center frequency point f=30 GHz, inductance L 1 ～L 4 The values of (a) are respectively 500pH, 150pH, 50pH, 300pH and capacitance C 1 ～C 3 The values of the first resistor R are respectively 500fF, 400fF, 200fF and the second resistor R 1 =500Ω, transistor M 1 ～M 2 Equivalent on-resistance R of (2) 2 =800 Ω, equivalent capacitance C 5 =50ff, and at the output terminal V of the high-frequency amplifier OUT Setting Z L The load impedance of =50Ω, the output impedance Z of the high-frequency amplifier shown in fig. 1A and 2A can be calculated as follows out Voltage gain A v ：
By comparison A v1 A is a v2 It can be seen that the single stage amplifier circuit of fig. 1A can produce an additional voltage gain of 0.76dB at the same parameters as compared to the circuit configuration of fig. 2A having the drain of the transistor directly connected to the RC feedback circuit and the output of the amplifier.
For another example, for a coil consisting of 7 inductance units L 0 =55 pH, unit capacitance C 0 =3ff, unit resistance value R 0 Microstrip line composed of waveguide unit 31 of =2.5Ω, assuming transistor M 1 Transconductance g of (2) m =150ms, gate-source capacitance C 4 100fF, center frequency point f=30 GHz, inductance L 1 ～L 4 The values of (a) are respectively 500pH, 150pH, 50pH, 300pH and capacitance C 1 ～C 3 The values of the first resistor R are respectively 500fF, 400fF, 200fF and the second resistor R 1 =500Ω, transistor M 1 ～M 2 Equivalent on-resistance R of (2) 2 =800 Ω, equivalent capacitance C 5 =50ff, and at the output terminal V of the high-frequency amplifier OUT Setting Z L The load impedance of =50Ω, the output impedance Z of the high-frequency amplifier shown in fig. 1A and 2A can be calculated as follows out Voltage gain A v ：
By comparison A v1 A is a v2 It can be seen that the single-stage amplifier shown in FIG. 1A is compared with the circuit structure shown in FIG. 2A in which the drain of the transistor is directly connected to the RC feedback circuit and the output of the amplifierThe circuit can produce an additional voltage gain of 0.73dB with the same parameters.
In addition, referring to fig. 4 and 5, fig. 4 and 5 show circuit layout designs of high frequency amplifiers according to some embodiments of the present utility model, respectively.
In the embodiment shown in FIG. 4, the first resistor R of the RC feedback circuit 1 Third capacitor C 3 Can be arranged on the transistor M 1 ～M 2 Via a first resistor R 1 Connect the first transistor M 1 And via a third capacitor C 3 And a lead 42 extends distally to connect the coplanar waveguide line 41. Thus, the utility model can pass through the third capacitor C 3 To absorb a small amount of wire inductance generated by the wire 42 to reduce its effect on the high frequency voltage gain Av.
Similarly, in the embodiment shown in FIG. 5, an RC feedback circuit may be provided to the transistor M 1 ～M 2 Via a first resistor R 1 Connect the first transistor M 1 And via a third capacitor C 3 And a wire 52 extends to a distal end to connect the microstrip line 51. Thus, the utility model can also pass through the third capacitor C 3 To absorb a small amount of wire inductance generated by the wire 52 to reduce its effect on the high frequency voltage gain Av.
Please further refer to fig. 6 and 7. Fig. 6 illustrates a circuit layout design of a high frequency amplifier provided in accordance with some embodiments of the present utility model. Fig. 7 illustrates a schematic diagram of an inductor provided in accordance with some embodiments of the present utility model.
In the embodiment shown in fig. 6, the high-frequency amplifier provided by the present utility model is further optionally configured with at least one fifth inductance L connected in series 5 . The waveguide structure jZ (ω) consisting of the microstrip line 61 and/or the coplanar waveguide line 62 may be connected in series via the at least one fifth inductance L 5 Respectively connected with the fourth inductor L 4 And a second LC structure to provide a more flexible parameter configuration.
In addition, an RC feedback circuit can be arranged on the transistor M 1 ～M 2 Via a first resistor R 1 Connect the first transistor M 1 And via a third capacitor C 3 And a wire 73 extending distally to connect the fifth inductance L 5 . Thus, the utility model can also pass through the third capacitor C 3 To absorb a small amount of wire inductance generated by the wire 73 to reduce its influence on the high frequency voltage gain Av.
Further, in the embodiments shown in fig. 6 and 7, the fifth inductance L 5 Can comprise a metal coil arranged on at least two layers of circuit structures. Here, the first circuit structure and the second circuit structure may be respectively disposed on different metal layers of the multi-layer circuit structure, the first circuit structure may be disposed on a front surface or an uppermost layer of the multi-layer circuit structure, and the second circuit structure may be disposed on a back surface, a second layer, or a lowermost layer of the multi-layer circuit structure. A first end of the first coil 71 arranged in the first circuit structure is close to the transistor M 1 ～M 2 Waveguide structures 61, 62 are provided and connected. The second end 74 of the second coil 72 disposed in the second circuit structure is distant from the transistor M 1 ～M 2 Set up and connect the fourth inductance L 4 And a second LC structure. The second end of the first coil 71 is connected to the first end of the second coil 72 via at least one through-layer via 73. The RC feedback circuit is close to the transistor M 1 ～M 2 Is provided with a first end connected with the first transistor M 1 And a second end thereof may be connected to a second end 74 of the second coil 72 via a wire 63 provided in the second circuit structure, or alternatively to a nearest point 75 of the second coil 72, thereby passing through the third capacitor C 3 To absorb a small amount of inductance of the second end 74 of the second coil 72 to the nearest point 75 to further simplify routing of the wire 63 on the multilayer circuit structure.
Furthermore, in the embodiment shown in FIG. 6, the technician may also combine the above output impedances Z out Load impedance Z L Voltage gain A v According to the total impedance value jZ (omega), the unit inductance value L of the waveguide unit 0 Unit capacitance value C 0 Unit resistance value R 0 And the fifth inductanceInductance value L 5 Determining the number n of waveguide units to be configured and the fifth inductance number m, so that the third capacitance C of the RC feedback circuit 3 Via n waveguide units 31 and m fifth inductances L 5 Connecting the second transistor M 2 To obtain a desired target voltage gain A v0 。
In order to verify the voltage gain effect of the amplifier circuit in the Ka frequency band (26.5 GHz-40 GHz) and the matching condition of the input/output impedance, the utility model also performs spectrum scanning on the voltage gain, the input standing wave and the output standing wave of the amplifier circuit shown in fig. 1A and fig. 2A to obtain the change curves of the voltage gain, the input standing wave and the output standing wave about different center frequencies f shown in fig. 8A-8C respectively.
As shown in fig. 8A, the amplifier circuit shown in fig. 1A can stably obtain a voltage gain boost of 0.7 to 0.8dB greater than that of the amplifier circuit shown in fig. 2A in the Ka band range of 25GHz to 34.9GHz, regardless of the combination of the coplanar waveguide, the microstrip line, or the waveguide structure and the inductance.
In addition, as shown in fig. 8B and 8C, the input standing wave and the output standing wave of the amplifier circuit shown in fig. 1A can be in the Ka band range of 25GHz to 34.9GHz, and the distribution pattern and the gain are consistent with those of the amplifier circuit shown in fig. 2A, so that the input and output matching of the amplifier is not affected basically, regardless of the combination of the coplanar waveguide, the microstrip line, and the waveguide structure and the inductance.
It will be appreciated by those skilled in the art that the amplifier circuit shown in fig. 1, which includes two cascode transistors M1-M2, is merely one non-limiting embodiment provided by the present utility model, and is intended to clearly illustrate the general concepts of the present utility model and to provide some embodiments for public implementation, and is not intended to limit the scope of the present utility model.
Alternatively, in other embodiments, those skilled in the art may also use two transistors with non-cascode structures, three or more transistors, or one transistor to construct an amplifier circuit based on the above concepts provided by the present utility model, so as to achieve a corresponding signal amplifying effect.
For example, referring to fig. 9, fig. 9 shows a circuit topology of a high frequency amplifier provided according to other embodiments of the present utility model.
In the embodiment shown in fig. 9, only one third transistor M may be included in the high frequency amplifier 3 . Power supply V DD1 Via a third transistor M 3 The drain and source of (a) are grounded. Third transistor M 3 The gate of which is connected to the input of the high frequency amplifier via a first LC structure. Third transistor M 3 The drain of (a) is connected to the output of the high frequency amplifier via a waveguide structure jZ (ω) and a second LC structure. A first end of the RC feedback circuit is connected to the third transistor M 3 And its second end is connected to the third transistor M via a waveguide structure jZ (ω) 3 Is formed on the drain electrode of the transistor. Thus, even if only the third transistor M is included 3 The utility model can reduce the quality factor of the output impedance of the output end of the amplifier by configuring the waveguide structure parameter adapting to the circuit parameter of the amplifier under the condition of not influencing the input/output impedance matching of the amplifier, thereby improving the high-frequency gain of the amplifier.
In summary, the high-frequency amplifier, the radio frequency chip and the radar provided by the utility model can reduce the quality factor of the output impedance of the output end of the amplifier by configuring the waveguide structure parameters adapting to the circuit parameters of the amplifier under the condition that the input-output impedance matching of the amplifier is not affected, so as to improve the high-frequency gain of the amplifier.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
Those of skill in the art would understand that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A high frequency amplifier, comprising:
the first transistor, wherein the drain electrode and the source electrode of the power supply are grounded through the first transistor, the grid electrode of the first transistor is connected with the input end of the high-frequency amplifier through a first LC structure, and the drain electrode of the first transistor is connected with the output end of the high-frequency amplifier through a waveguide structure and a second LC structure; and
an RC feedback circuit having a first end connected to the gate of the first transistor and a second end connected to the drain of the first transistor via the waveguide structure.
2. The high frequency amplifier of claim 1, further comprising at least one second transistor, wherein,
the drain electrode of the first transistor is connected with the source electrode of the second transistor, the power supply is grounded through the drain electrode and the source electrode of the second transistor and the drain electrode and the source electrode of the first transistor, the grid electrode of the first transistor is connected with the input end of the high-frequency amplifier through the first LC structure, the grid electrode of the second transistor is grounded, the drain electrode of the second transistor is connected with the output end of the high-frequency amplifier through the waveguide structure and the second LC structure,
the first end of the RC feedback circuit is connected with the grid electrode of the first transistor, and the second end of the RC feedback circuit is connected with the drain electrode of the second transistor through the waveguide structure.
3. The high frequency amplifier according to claim 2, wherein the waveguide structure comprises coplanar waveguide lines and/or microstrip lines.
4. The high frequency amplifier of claim 3, further comprising a third inductance and a fourth inductance, wherein a source of the first transistor is grounded via the third inductance and the power supply is connected to the waveguide structure via the fourth inductance.
5. The high frequency amplifier of claim 4, further comprising at least one fifth inductance connected in series, wherein the waveguide structure connects the fourth inductance and the second LC structure via the at least one fifth inductance connected in series, respectively.
6. The high frequency amplifier according to claim 5, wherein the fifth inductor comprises a metal coil provided in at least two layers of circuit structures, wherein,
the first end of the first coil arranged in the first circuit structure is arranged close to the transistor and is connected with the waveguide structure,
the second end of the second coil arranged on the second circuit structure is far away from the transistor and is connected with the fourth inductor and the second LC structure,
the second end of the first coil is connected to the first end of the second coil via at least one through-layer via,
the RC feedback circuit is arranged close to the transistor, and the second end of the RC feedback circuit is closely connected with the second coil through a wire arranged on the second circuit structure.
7. The high frequency amplifier of claim 5, wherein said waveguide structure comprises at least one waveguide element, said RC feedback circuitThe second end of the circuit is connected with the drain electrode of the second transistor through n waveguide units and m fifth inductors, wherein the number n of the waveguide units and the number m of the fifth inductors are according to the total impedance value jZ (omega) of the waveguide structure and the fifth inductors and the unit inductance value L of the waveguide units 0 Unit capacitance value C 0 Unit resistance value R 0 And the inductance value L of the fifth inductance 5 And (5) determining.
8. The high frequency amplifier according to claim 6, wherein a center frequency point f of the high frequency amplifier is located in a Ka band.
9. A radio frequency chip comprising a high frequency amplifier as claimed in any one of claims 1 to 8.
10. A radar comprising a high frequency amplifier as claimed in any one of claims 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322151912.6U CN220629309U (en) | 2023-08-10 | 2023-08-10 | High-frequency amplifier, radio frequency chip and radar |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322151912.6U CN220629309U (en) | 2023-08-10 | 2023-08-10 | High-frequency amplifier, radio frequency chip and radar |
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| Publication Number | Publication Date |
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| CN220629309U true CN220629309U (en) | 2024-03-19 |
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| CN202322151912.6U Active CN220629309U (en) | 2023-08-10 | 2023-08-10 | High-frequency amplifier, radio frequency chip and radar |
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| Country | Link |
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| CN (1) | CN220629309U (en) |
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