CN220510050U - Integrated photoelectric sensor with shielding reflection shell - Google Patents
Integrated photoelectric sensor with shielding reflection shell Download PDFInfo
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- CN220510050U CN220510050U CN202222942913.8U CN202222942913U CN220510050U CN 220510050 U CN220510050 U CN 220510050U CN 202222942913 U CN202222942913 U CN 202222942913U CN 220510050 U CN220510050 U CN 220510050U
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- reflecting
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- 239000000463 material Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 25
- 238000001746 injection moulding Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The utility model provides an integrated photoelectric sensor with a shielding reflection shell, which comprises a BT plate, a shell, an infrared emission wafer, an infrared receiving wafer, a first reflection lens and a second reflection lens, wherein the infrared emission wafer, the infrared receiving wafer, the first reflection lens and the second reflection lens are arranged on the BT plate. The infrared emission wafer and the infrared receiving wafer are respectively encapsulated in the first reflecting lens and the second reflecting lens; the shell is internally provided with a first reflecting cavity and a second reflecting cavity, and the first reflecting lens and the second reflecting lens are respectively positioned in the first reflecting cavity and the second reflecting cavity. Compared with the traditional split type transmitting and receiving geminate transistors, the light transmitting and receiving positioning device is more accurate in light transmitting and receiving positioning and better in transmitting and receiving pairing photocurrent consistency. The shell with the reflecting surface is added, and the light rays passing through the reflecting lens can be reflected by the reflecting surface of the shell, so that more emitted light rays can reach the receiving wafer, and the intensity of light ray signals is improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor packaging, and particularly relates to a photoelectric sensor with a shielding reflection shell.
Background
The photoelectric sensor is provided with a transmitting wafer for emitting infrared rays and a receiving wafer for receiving the infrared rays, and the transmitting and receiving wafers are respectively packaged in 2 symmetrical reflecting lenses.
In the existing photoelectric sensor, the infrared rays emitted by the emitting wafer are reflected only by the reflecting lens, and therefore, part of light rays inevitably pass through the reflecting lens and cannot be reflected into the receiving wafer, so that the light ray signal intensity of the photoelectric sensor is not improved.
Disclosure of Invention
The utility model aims to provide a photoelectric sensor with a shielding reflection shell, which is provided with two reflection surfaces and can improve the light signal intensity.
The utility model is realized in such a way that the photoelectric sensor with the shielding reflection shell comprises a BT plate (Bismaleimide Triazine plate, known as BT resin base plate material, such as BT resin base copper-clad plate), a shell covered on the BT plate, an infrared emission wafer, an infrared receiving wafer, a first reflection lens and a second reflection lens which are arranged on the BT plate, wherein the BT plate is provided with a metal conductive layer; the infrared emission wafer and the infrared receiving wafer are respectively packaged in the first reflecting lens and the second reflecting lens; the first reflecting lens is provided with a first reflecting surface, the second reflecting lens is provided with a second reflecting surface, and the first reflecting surface and the second reflecting surface are symmetrically arranged; the shell is internally provided with a first reflecting cavity and a second reflecting cavity, and the first reflecting lens and the second reflecting lens are respectively positioned in the first reflecting cavity and the second reflecting cavity; the first reflecting cavity is internally provided with a third reflecting surface, and the second reflecting cavity is internally provided with a fourth reflecting surface; the third reflecting surface and the fourth reflecting surface are symmetrically arranged.
Further, the first reflecting surface, the second reflecting surface, the third reflecting surface and the fourth reflecting surface are all inclined to the plate surface of the BT plate.
Further, the shell is sleeved on the outer side wall of the first reflecting cavity and the outer side wall of the second reflecting cavity, and a light outlet and a light inlet are respectively formed in the shell.
Further, a yielding groove is formed in the bottom of the shell, and the BT plate is embedded in the yielding groove.
Further, an avoidance space for the application end to interrupt the light path is reserved between the first reflecting cavity and the second reflecting cavity.
Furthermore, the shell is sleeved at the bottom of the avoidance space, and a shielding part for preventing light leakage is arranged at the bottom of the avoidance space, and is made of or filled with a light-proof material.
Furthermore, the transmitting wafer and the receiving wafer are respectively encapsulated in the first reflecting lens and the second reflecting lens in a high-temperature pressure injection molding glue sealing mode.
Compared with the prior art, the utility model has the beneficial effects that:
compared with the traditional split type transmitting and receiving geminate transistors, the light transmitting and receiving positioning of the photoelectric sensor is more accurate, and the consistency of transmitting and receiving pairing photocurrent is better. The shell with the reflecting surface is added, and the light rays passing through the reflecting lens can be reflected by the reflecting surface of the shell, so that more emitted light rays can reach the receiving wafer, and the intensity of light ray signals is improved.
Drawings
FIG. 1 is a schematic perspective view of a photoelectric sensor with a shielding reflective shell according to an embodiment of the present utility model;
FIG. 2 is a schematic view of a perspective view of the photo sensor shown in FIG. 1 at another angle;
FIG. 3 is a schematic longitudinal cross-sectional view of the photo sensor shown in FIG. 1;
FIG. 4 is a schematic diagram of an exploded structure of the photo sensor shown in FIG. 1;
fig. 5 is a schematic view of an exploded view of the photo sensor of fig. 1 at another angle.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., are based on those shown in the drawings, are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present utility model; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be the communication between the two parts. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1 to 3, there is shown a photoelectric sensor with a shielding reflective shell provided in this embodiment, including a BT board 1, a shell 2 covering the BT board 1, an infrared emitting wafer 3 provided on the BT board 1, an infrared receiving wafer 4, a first reflective lens 5, and a second reflective lens 6.
The BT plate 1 is provided with a metal conductive layer 11, so that the emitting wafer 3 and the receiving wafer 4 can realize common cathode (-pole) power supply, the emitting power supply and the receiving power supply (+ pole) power supply are separated, and the emitting wafer 3 can adopt an infrared wavelength chip of 850 nm-880 nm-940 nm-1310 nm.
The transmitting wafer 3 and the receiving wafer 4 are respectively encapsulated in the first reflecting lens 5 and the second reflecting lens 6 by high-temperature pressure injection molding.
The first reflecting lens 5 has a first reflecting surface 51, the second reflecting lens 6 has a second reflecting surface 61, and the first reflecting surface 51 and the second reflecting surface 61 are symmetrically arranged.
Referring to fig. 3 and 4, the housing 2 has a first reflective cavity 21 and a second reflective cavity 22 therein, and the first reflective lens 5 and the second reflective lens 6 are respectively located in the first reflective cavity 21 and the second reflective cavity 22. The first reflecting cavity 21 is internally provided with a third reflecting surface 23, and the second reflecting cavity 22 is internally provided with a fourth reflecting surface 24; the third reflecting surface 23 and the fourth reflecting surface 24 are symmetrically arranged. The first reflecting surface 51, the second reflecting surface 61, the third reflecting surface 23, and the fourth reflecting surface 24 are inclined to the plate surface of the BT plate 1. In this embodiment, the third reflecting surface 23 and the fourth reflecting surface 24 are formed by coating the inner wall of the reflecting cavity with a reflective material.
The bottom of the shell 2 is provided with a yielding groove 25, the BT plate 1 is embedded in the yielding groove 25, the BT plate 1 and the shell 2 jointly form a space for assembling the first reflecting lens 5 and the second reflecting lens 6, and the photoelectric sensor forms an integral structure after being completely assembled.
Specifically, referring to fig. 3 and 5, the shell 2 of the present embodiment has a light outlet 26 and a light inlet 27 respectively formed on the outer side wall of the first reflective cavity 21 and the outer side wall of the second reflective cavity 22. After the infrared light is emitted from the emitting wafer 3, the light emitted from the first reflecting surface 51 and the third reflecting surface 23 passes through the light emitting opening 26, enters the light inlet 27, is reflected by the second reflecting surface 61 and the fourth reflecting surface 24, and enters the receiving wafer 4.
It can be seen that, in the photoelectric sensor of this embodiment, the components such as the transmitting wafer 3, the receiving wafer 4, the shell 2 and the like are assembled together to form an integrated structure, and compared with the traditional split type transmitting and receiving pair tube, the light transmitting and receiving positioning is more accurate, and the transmitting and receiving pair photocurrent consistency is better. The shell 2 with the reflecting surface is added, and the light passing through the reflecting lens can be reflected by the reflecting surface of the shell 2, so that more emitted light can reach the receiving wafer 4, and the intensity of a light signal is improved.
Preferably, a avoiding space 28 for the application end to interrupt the light path is reserved between the first reflecting cavity 21 and the second reflecting cavity 22 of the shell 2. The application end can adopt the light-tight separation blade to intercept the light path, realize the separation of infrared light, the receiving end is in order to catch the action signal of interception, the sampling is handled to the light current, peripheral circuit can carry out signal processing according to receiving wafer current variation.
Preferably, the bottom of the avoiding space 28 of the shell 2 is provided with a shielding part 29 for preventing light leakage, and the shielding part 29 is made of or filled with a light-proof material. By arranging the shielding part 29, light emitted by the emitting end can be prevented from leaking from the bottom to the receiving end, and the accuracy of the photoelectric sensor can be improved.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.
Claims (7)
1. The integrated photoelectric sensor with the shielding reflection shell is characterized by comprising a BT plate, a shell, an infrared emission wafer, an infrared receiving wafer, a first reflecting lens and a second reflecting lens, wherein the BT plate is provided with a metal conducting layer, the shell is covered on the BT plate, and the infrared emission wafer, the infrared receiving wafer, the first reflecting lens and the second reflecting lens are arranged on the BT plate; the infrared emission wafer and the infrared receiving wafer are respectively packaged in the first reflecting lens and the second reflecting lens; the first reflecting lens is provided with a first reflecting surface, the second reflecting lens is provided with a second reflecting surface, and the first reflecting surface and the second reflecting surface are symmetrically arranged; the shell is internally provided with a first reflecting cavity and a second reflecting cavity, and the first reflecting lens and the second reflecting lens are respectively positioned in the first reflecting cavity and the second reflecting cavity; the first reflecting cavity is internally provided with a third reflecting surface, and the second reflecting cavity is internally provided with a fourth reflecting surface; the third reflecting surface and the fourth reflecting surface are symmetrically arranged.
2. The photoelectric sensor according to claim 1, wherein the first reflecting surface, the second reflecting surface, the third reflecting surface, and the fourth reflecting surface are inclined to the plate surface of the BT plate.
3. The photoelectric sensor of claim 1, wherein the shell is sleeved on the outer side wall of the first reflecting cavity and the outer side wall of the second reflecting cavity, and a light outlet and a light inlet are respectively formed on the outer side walls of the first reflecting cavity and the second reflecting cavity.
4. The photoelectric sensor of claim 1, wherein a relief groove is provided in the bottom of the shell, and the BT plate is embedded in the relief groove.
5. The photoelectric sensor according to any one of claims 1 to 4, wherein a space for avoiding an optical path is reserved between the first reflecting cavity and the second reflecting cavity.
6. The photoelectric sensor according to claim 5, wherein a shielding part for preventing light leakage is provided at the bottom of the avoiding space, and the shielding part is made of or filled with a light-proof material.
7. The sensor of any one of claims 1 to 4, wherein the transmitting wafer and the receiving wafer are respectively encapsulated in the first reflective lens and the second reflective lens by high-temperature pressure molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222942913.8U CN220510050U (en) | 2022-11-06 | 2022-11-06 | Integrated photoelectric sensor with shielding reflection shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222942913.8U CN220510050U (en) | 2022-11-06 | 2022-11-06 | Integrated photoelectric sensor with shielding reflection shell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220510050U true CN220510050U (en) | 2024-02-20 |
Family
ID=89873678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222942913.8U Active CN220510050U (en) | 2022-11-06 | 2022-11-06 | Integrated photoelectric sensor with shielding reflection shell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220510050U (en) |
-
2022
- 2022-11-06 CN CN202222942913.8U patent/CN220510050U/en active Active
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