CN115863469A

CN115863469A - Integrated photoelectric sensor with shielding reflection shell

Info

Publication number: CN115863469A
Application number: CN202211381110.8A
Authority: CN
Inventors: 胡自立
Original assignee: Shenzhen Cgx Optoelectronic Technology Inc
Current assignee: Shenzhen Cgx Optoelectronic Technology Inc
Priority date: 2022-11-06
Filing date: 2022-11-06
Publication date: 2023-03-28

Abstract

The invention provides a photoelectric sensor with a shielding reflection shell, which comprises a BT plate, a shell, an infrared emission wafer, an infrared receiving wafer, a first reflection lens and a second reflection lens, wherein the infrared emission wafer, the infrared receiving wafer, the first reflection lens and the second reflection lens are arranged on the BT plate. The infrared transmitting chip and the infrared receiving chip are respectively packaged in the first reflecting lens and the second reflecting lens; a first reflection cavity and a second reflection cavity are arranged in the shell, and the first reflection lens and the second reflection lens are respectively positioned in the first reflection cavity and the second reflection cavity. Compared with the traditional split type transmitting and receiving pair tube, the invention has the advantages that the light transmitting and receiving positioning is more accurate, and the transmitting and receiving pairing photocurrent consistency is better. The shell with the reflecting surface is added, and the light passing through the reflecting lens can be reflected by the reflecting surface of the shell, so that more emitted light can reach the receiving wafer, and the intensity of light signals is improved.

Description

Integrated photoelectric sensor with shielding reflection shell

Technical Field

The invention belongs to the technical field of semiconductor packaging, and particularly relates to a photoelectric sensor with a shielding reflection shell.

Background

The photoelectric sensor is provided with a transmitting wafer for emitting infrared rays and a receiving wafer for receiving the infrared rays, and the transmitting wafer and the receiving wafer are respectively packaged in 2 symmetrical reflecting lenses.

In the conventional photoelectric sensor, infrared rays emitted by the emitting wafer are only reflected by the reflecting lens, so that part of light rays inevitably pass through the reflecting lens and cannot be reflected to the receiving wafer, and the improvement of the light ray signal intensity of the photoelectric sensor is not facilitated.

Disclosure of Invention

The invention aims to provide a photoelectric sensor with a shielding reflection shell, which is provided with two reflection surfaces and can improve the intensity of light signals.

The invention is realized in such a way that a photoelectric sensor with a shielding and reflecting shell comprises a BT plate (Bismaleimide triazine plate, which is called BT resin substrate material entirely, such as BT resin substrate copper-clad plate) distributed with metal conducting layers, a shell covering the BT plate, an infrared transmitting wafer arranged on the BT plate, an infrared receiving wafer, a first reflecting lens and a second reflecting lens; the infrared transmitting wafer and the infrared receiving wafer are respectively packaged in the first reflecting lens and the second reflecting lens; the first reflecting lens is provided with a first reflecting surface, the second reflecting lens is provided with a second reflecting surface, and the first reflecting surface and the second reflecting surface are symmetrically arranged; a first reflecting cavity and a second reflecting cavity are arranged in the shell, and the first reflecting lens and the second reflecting lens are respectively positioned in the first reflecting cavity and the second reflecting cavity; the first reflecting cavity is internally provided with a third reflecting surface, and the second reflecting cavity is internally provided with a fourth reflecting surface; the third reflecting surface and the fourth reflecting surface are symmetrically arranged.

Further, the first reflecting surface, the second reflecting surface, the third reflecting surface and the fourth reflecting surface are all inclined to the board surface of the BT board.

Furthermore, the shell is sleeved on the outer side wall of the first reflection cavity and the outer side wall of the second reflection cavity and is respectively provided with a light outlet and a light inlet.

Furthermore, the bottom of shell cover is equipped with the groove of stepping down, the BT board is embedded in the inslot of stepping down.

Furthermore, an avoidance space for blocking the optical path by the application end is reserved between the first reflection cavity and the second reflection cavity by the shell.

Furthermore, the shell sleeve is provided with a shielding part for preventing light leakage at the bottom of the avoiding space, and the shielding part is made of or filled with opaque materials.

Furthermore, the transmitting wafer and the receiving wafer are respectively packaged in the first reflecting lens and the second reflecting lens in a high-temperature pressure injection molding manner.

Compared with the prior art, the invention has the beneficial effects that:

according to the photoelectric sensor, the transmitting wafer, the receiving wafer, the shell and other parts are assembled together to form an integrated structure, compared with the traditional split type transmitting and receiving pair tube, the photoelectric sensor has the advantages that the light transmitting and receiving positioning is more accurate, and the transmitting and receiving pairing photocurrent consistency is better. The shell with the reflecting surface is added, and the light passing through the reflecting lens can be reflected by the reflecting surface of the shell, so that more emitted light can reach the receiving wafer, and the intensity of light signals is improved.

Drawings

Fig. 1 is a schematic perspective view of a photoelectric sensor with a shielding reflective housing according to an embodiment of the present invention;

FIG. 2 is a schematic perspective view of the photoelectric sensor shown in FIG. 1;

FIG. 3 is a schematic longitudinal cross-sectional view of the photoelectric sensor shown in FIG. 1;

FIG. 4 is an exploded view of the photoelectric sensor shown in FIG. 1;

fig. 5 is an exploded view of the photoelectric sensor shown in fig. 1 from another angle.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.

Referring to fig. 1 to fig. 3, a photoelectric sensor with a shielding reflective housing according to the present embodiment is shown, which includes a BT board 1, a housing 2 covering the BT board 1, an infrared emitting chip 3 disposed on the BT board 1, an infrared receiving chip 4, a first reflective lens 5, and a second reflective lens 6.

The BT plate 1 is distributed with a metal conducting layer 11, which can make the transmitting wafer 3 and the receiving wafer 4 realize common negative (negative) power supply, the transmitting and receiving power supply (positive) separately supply, the transmitting wafer 3 can adopt 850 nm-880 nm-940 nm-1310 nm infrared wavelength chip.

The transmitting chip 3 and the receiving chip 4 are respectively packaged in the first reflective lens 5 and the second reflective lens 6 by high temperature injection molding.

The first reflecting lens 5 has a first reflecting surface 51, the second reflecting lens 6 has a second reflecting surface 61, and the first reflecting surface 51 and the second reflecting surface 61 are symmetrically arranged.

Referring to fig. 3 and 4, the shell 2 has a first reflective cavity 21 and a second reflective cavity 22 therein, and the first reflective lens 5 and the second reflective lens 6 are respectively located in the first reflective cavity 21 and the second reflective cavity 22. The first reflecting cavity 21 is internally provided with a third reflecting surface 23, and the second reflecting cavity 22 is internally provided with a fourth reflecting surface 24; the third reflecting surface 23 and the fourth reflecting surface 24 are symmetrically arranged. The first reflection surface 51, the second reflection surface 61, the third reflection surface 23, and the fourth reflection surface 24 are all inclined to the plate surface of the BT plate 1. In this embodiment, the third reflective surface 23 and the fourth reflective surface 24 are formed by coating reflective material on the inner wall of the reflective cavity.

The bottom of the shell 2 is provided with a receding groove 25, the BT plate 1 is embedded in the receding groove 25, the BT plate 1 and the shell 2 jointly form a space for assembling the first reflecting lens 5 and the second reflecting lens 6, and the photoelectric sensor forms an integral structure after being completely assembled.

Specifically, referring to fig. 3 and fig. 5, the shell 2 of the present embodiment is provided with a light outlet 26 and a light inlet 27 on the outer side wall of the first reflective cavity 21 and the outer side wall of the second reflective cavity 22, respectively. After the infrared light exits from the transmitting wafer 3, the light exiting from the first reflecting surface 51 and the third reflecting surface 23 enters the light inlet 27 through the light outlet 26, and finally enters the receiving wafer 4 after being reflected by the second reflecting surface 61 and the fourth reflecting surface 24.

It can be seen that, the photoelectric sensor of this embodiment, its parts such as transmission wafer 3, receipt wafer 4, shell 2 assemble together and form the integral type structure, compare in the split type emission of traditional receipt geminate transistor, the emission of light is received and is fixed a position more accurately, and the emission is received and is paired photocurrent uniformity better. The shell 2 with the reflecting surface is added, and the light passing through the reflecting lens can be reflected by the reflecting surface of the shell 2, so that more emitted light can reach the receiving wafer 4, and the intensity of light signals is improved.

Preferably, an avoidance space 28 for the application end to interrupt the light path is reserved between the first reflection cavity 21 and the second reflection cavity 22 in the housing 2. The application end can adopt a light-tight baffle to block the light path, so that infrared light is blocked, the receiving end can capture blocking action signals, the light current is sampled, and the peripheral circuit can perform signal processing according to the current change of the receiving wafer.

Preferably, the housing 2 is provided with a shielding portion 29 for preventing light leakage at the bottom of the avoiding space 28, and the shielding portion 29 is made of opaque material or filled with opaque material. By arranging the shielding part 29, light emitted by the emitting end can be prevented from leaking to the receiving end from the bottom position, which is beneficial to improving the precision of the photoelectric sensor.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims

1. A photoelectric sensor with a shielding reflection shell is characterized by comprising a BT plate, a shell, an infrared emission wafer, an infrared receiving wafer, a first reflection lens and a second reflection lens, wherein the BT plate is provided with a metal conducting layer; the infrared transmitting wafer and the infrared receiving wafer are respectively packaged in the first reflecting lens and the second reflecting lens; the first reflecting lens is provided with a first reflecting surface, the second reflecting lens is provided with a second reflecting surface, and the first reflecting surface and the second reflecting surface are symmetrically arranged; a first reflecting cavity and a second reflecting cavity are arranged in the shell, and the first reflecting lens and the second reflecting lens are respectively positioned in the first reflecting cavity and the second reflecting cavity; the first reflecting cavity is internally provided with a third reflecting surface, and the second reflecting cavity is internally provided with a fourth reflecting surface; the third reflecting surface and the fourth reflecting surface are symmetrically arranged.

2. The photo-sensor of claim 1, wherein the first, second, third, and fourth reflective surfaces are all inclined to the BT board plane.

3. The photoelectric sensor of claim 1, wherein the housing is sleeved on the outer side wall of the first reflective cavity and the outer side wall of the second reflective cavity and is provided with a light outlet and a light inlet respectively.

4. The photoelectric sensor as claimed in claim 1, wherein the bottom of the shell is provided with a recess, and the BT board is embedded in the recess.

5. The photoelectric sensor according to any one of claims 1 to 4, wherein an avoidance space for blocking the optical path by the application end is reserved between the first reflection cavity and the second reflection cavity.

6. The photoelectric sensor as claimed in claim 5, wherein the housing is provided with a shielding portion for preventing light leakage at the bottom of the avoiding space, and the shielding portion is made of or filled with an opaque material.

7. The sensor of any one of claims 1-4, wherein the transmitting chip and the receiving chip are respectively packaged in the first reflective lens and the second reflective lens by high temperature molding.