CN220491849U - High-temperature measuring equipment for rapid annealing of wafer - Google Patents
High-temperature measuring equipment for rapid annealing of wafer Download PDFInfo
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- CN220491849U CN220491849U CN202322004664.2U CN202322004664U CN220491849U CN 220491849 U CN220491849 U CN 220491849U CN 202322004664 U CN202322004664 U CN 202322004664U CN 220491849 U CN220491849 U CN 220491849U
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- furnace body
- temperature measuring
- wafer
- rapid annealing
- hole
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- 238000000137 annealing Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 claims abstract description 57
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000009529 body temperature measurement Methods 0.000 claims description 8
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 238000004861 thermometry Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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Abstract
The utility model discloses high-temperature measuring equipment for rapid annealing of wafers, which belongs to the technical field of semiconductor processing, and comprises a furnace body, wherein a temperature measuring through hole is formed in the bottom wall of the furnace body, a wafer carrying disc is arranged right above the temperature measuring through hole in the furnace body, a temperature measuring module is arranged at the bottom of the furnace body, a heating module is arranged in the furnace body, and a baffle plate for shielding the temperature measuring through hole is arranged on the bottom wall of the furnace body; during operation, the heating module is used for heating the wafer on the wafer carrying disc, the temperature measuring module can receive the optical radiation on the wafer carrying disc through the temperature measuring through hole by the baffle plate, and the optical radiation can be converted into a temperature value by the temperature measuring module, so that the purpose of measuring the temperature of the wafer is achieved.
Description
Technical Field
The utility model relates to the technical field of semiconductor processing, in particular to high-temperature measuring equipment for rapid annealing of a wafer.
Background
In the semiconductor industry, a wafer has lattice defects in the processing process, and rapid annealing refers to heating the wafer to a certain high temperature in a short time and then annealing. Thereby eliminating wafer defects and improving the quality of products.
The temperature measuring element used in the existing rapid annealing furnace in the market is a thermocouple, but the thermocouple is generally only suitable for the process below 800 ℃ and cannot be used for the process above 800 ℃. When the temperature is measured, the thermocouple is contacted with the wafer or below the carrying disc, and when the temperature in the cavity is higher than 800 ℃, the temperature precision is deteriorated, and the quality of the annealed wafer is affected. And the thermocouple can soften and even droop along with the rise of temperature, and the contact of a wafer or a carrying disc can be broken, so that the measured temperature is lower than the actual temperature, and the control system can continuously heat, so that the annealing furnace can be dangerous, such as the burst of quartz parts in the cavity.
Therefore, it is necessary to design a high temperature thermometric apparatus for rapid annealing of wafers that solves the above-mentioned problems.
Disclosure of Invention
The utility model aims to: a high temperature measurement device for rapid annealing of wafers solves the above problems of the prior art.
In order to solve the technical problems, the utility model provides high-temperature measuring equipment for rapid annealing of wafers, which comprises a furnace body, wherein a temperature measuring through hole is formed in the bottom wall of the furnace body, a wafer carrying disc is arranged right above the temperature measuring through hole in the furnace body, a temperature measuring module is arranged at the bottom of the furnace body, a heating module is arranged in the furnace body, and a baffle plate for shielding the temperature measuring through hole is arranged on the bottom wall of the furnace body.
As a preferable scheme, the temperature measuring module comprises a fixed bracket arranged below the furnace body, a temperature measuring meter is vertically arranged on the fixed bracket, and the temperature measuring end of the temperature measuring meter is aligned with the temperature measuring through hole.
As a preferred scheme, the heating module comprises a plurality of heating lamp tubes arranged on the upper side and the lower side of the wafer carrier plate.
As a preferable scheme, one end of the thermometer, which is close to the temperature measuring through hole, is sleeved with a cooling ring.
As a preferable scheme, a placing drawer is further arranged on the furnace body, and the wafer carrying disc is arranged on the placing drawer.
As a preferable scheme, supporting legs are arranged below the furnace body.
As a preferable scheme, quartz partition plates are arranged on the upper side and the lower side of the wafer carrier plate and positioned between the heating lamp tubes.
As a preferable scheme, the baffle is fixed on the bottom wall of the furnace body through a compression ring, and a sealing ring is further arranged between the baffle and the compression ring.
As a preferred embodiment, the baffle is made of quartz.
The beneficial effects are that: the utility model relates to high-temperature measuring equipment for rapid annealing of a wafer, which is used for heating the wafer positioned on a wafer carrying disc through a heating module, wherein the temperature measuring module can receive optical radiation positioned on the wafer carrying disc through a temperature measuring through hole by a baffle plate, so that the purpose of measuring the temperature of the wafer is achieved; the temperature measuring module of the equipment is arranged outside the furnace body, so that the measured temperature cannot be affected by the high temperature in the furnace body to reduce the accuracy of the measured temperature.
Drawings
FIG. 1 is a schematic cross-sectional view of the overall structure of the present utility model.
Fig. 2 is a schematic cross-sectional view of a part of the structure of the present utility model.
Fig. 3 is a schematic overall structure of the present utility model.
The reference numerals in the drawings are as follows: furnace body 1, temperature measurement through-hole 2, baffle 3, fixed bolster 4, thermometer 5, cooling ring 6, heating fluorescent tube 7, quartz baffle 8, wafer carrier plate 9, place drawer 10, supporting leg 11, clamp ring 12, sealing washer 13.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present utility model. It will be apparent, however, to one skilled in the art that the utility model may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the utility model.
The applicant researches find that the temperature measuring element used in the existing rapid annealing furnace in the market is a thermocouple, and when the temperature in the cavity is higher than 800 ℃, the temperature accuracy can be deteriorated, so that the quality of the annealed wafer is affected.
For this reason, the utility model provides a high temperature measurement device for rapid annealing of wafers, please refer to fig. 1 to 3, the device comprises a furnace body 1, a temperature measurement through hole 2 is arranged on the bottom wall of the furnace body 1, a wafer carrying disc 9 is arranged in the furnace body 1 and right above the temperature measurement through hole 2, a temperature measurement module is arranged at the bottom of the furnace body 1, a heating module is arranged in the furnace body 1, and a baffle 3 for shielding the temperature measurement through hole 2 is arranged on the bottom wall of the furnace body 1; during operation, the wafer on the wafer carrying disc 9 is heated by the heating module, the temperature measuring module can receive the optical radiation on the wafer carrying disc 9 through the temperature measuring through hole 2 by the baffle plate, and the optical radiation can be converted into a temperature value by the temperature measuring module, so that the purpose of measuring the temperature of the wafer is achieved.
Preferably, the temperature measuring module comprises a fixed support 4 arranged below the furnace body 1, a temperature measuring meter 5 is vertically arranged on the fixed support 4, a temperature measuring end of the temperature measuring meter 5 is aligned to the temperature measuring through hole 2, and the temperature measuring meter 5 can receive optical radiation from the wafer on the wafer carrying disc 9 through the baffle 3.
Preferably, the heating module includes a plurality of heating lamps 7 disposed at upper and lower sides of the wafer carrier 9, and the wafers on the wafer carrier 9 can be heated by the plurality of heating lamps 7.
Furthermore, a cooling ring 6 is sleeved on the thermometer 5 near one end of the temperature measuring through hole 2, and cooling air can be introduced into the cooling ring 6 to cool the thermometer 5.
Further, a placement drawer 10 is further provided on the furnace body 1, and the wafer carrier 9 is provided on the placement drawer 10; the wafer carrier 9 on the drawer 10 can be pushed and pulled to enter or withdraw from the furnace body 1.
Further, supporting legs 11 are arranged below the furnace body 1.
Preferably, in order to uniformly heat the wafers on the wafer carrier 9 and to achieve the process environment required by annealing, a quartz partition plate 8 is disposed between the heating lamps 7 on the upper and lower sides of the wafer carrier 9, a closed space is defined between the quartz partition plate 8 and the side wall of the furnace body 1, the heating lamps 7 heat the quartz partition plate 8 first, and then the quartz partition plate 8 transfers heat to the wafer carrier 9 through heat transfer.
Preferably, the baffle 3 is fixed on the bottom wall of the furnace body 1 through a compression ring 12, and a sealing ring 13 is further arranged between the baffle 3 and the compression ring 12.
Preferably, the baffle 3 is made of quartz with high melting point and good heat conduction performance.
The preferred embodiments of the present utility model have been described in detail above with reference to the accompanying drawings, but the present utility model is not limited to the specific details of the above embodiments, and various equivalent changes can be made to the technical solutions of the present utility model within the scope of the technical concept of the present utility model, and these equivalent changes all fall within the scope of the present utility model.
Claims (9)
1. A high temperature thermometry apparatus for rapid annealing of a wafer, comprising:
a furnace body;
the temperature measuring through hole is formed in the bottom wall of the furnace body;
the wafer carrying disc is arranged in the furnace body and is positioned right above the temperature measuring through hole;
the temperature measuring module is arranged at the bottom of the furnace body;
the heating module is arranged in the furnace body;
the baffle is arranged on the bottom wall of the furnace body and used for shielding the temperature measuring through hole.
2. The apparatus of claim 1, wherein the temperature measurement module comprises:
the fixed bracket is arranged below the furnace body;
the temperature measuring meter is vertically arranged on the fixed support, and the temperature measuring end is aligned with the temperature measuring through hole.
3. A high temperature thermometry apparatus for rapid annealing of a wafer according to claim 1, wherein the heating module comprises:
and the heating lamp tubes are arranged on the upper side and the lower side of the wafer carrier plate.
4. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 2, wherein:
and a cooling ring is sleeved on one end of the thermometer, which is close to the temperature measuring through hole.
5. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 1, wherein:
the furnace body is also provided with a placing drawer, and the wafer carrying disc is arranged on the placing drawer.
6. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 1, wherein:
supporting legs are arranged below the furnace body.
7. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 3, wherein:
quartz partition plates are arranged on the upper side and the lower side of the wafer carrying disc and between the heating lamp tubes.
8. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 1, wherein:
the baffle is fixed to the bottom wall of the furnace body through the compression ring, and a sealing ring is further arranged between the baffle and the compression ring.
9. A high temperature thermometric apparatus for rapid annealing of wafers according to claim 1, wherein:
the baffle is made of quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322004664.2U CN220491849U (en) | 2023-07-28 | 2023-07-28 | High-temperature measuring equipment for rapid annealing of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322004664.2U CN220491849U (en) | 2023-07-28 | 2023-07-28 | High-temperature measuring equipment for rapid annealing of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220491849U true CN220491849U (en) | 2024-02-13 |
Family
ID=89839919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322004664.2U Active CN220491849U (en) | 2023-07-28 | 2023-07-28 | High-temperature measuring equipment for rapid annealing of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220491849U (en) |
-
2023
- 2023-07-28 CN CN202322004664.2U patent/CN220491849U/en active Active
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