CN220440557U - SiC switching tube driving control circuit in switching power supply - Google Patents
SiC switching tube driving control circuit in switching power supply Download PDFInfo
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- CN220440557U CN220440557U CN202321428074.6U CN202321428074U CN220440557U CN 220440557 U CN220440557 U CN 220440557U CN 202321428074 U CN202321428074 U CN 202321428074U CN 220440557 U CN220440557 U CN 220440557U
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- 238000002955 isolation Methods 0.000 claims abstract description 29
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 75
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 72
- 238000004804 winding Methods 0.000 claims description 27
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model provides a drive control circuit of an SiC switch tube in a switch power supply, which comprises a PWM drive circuit, an isolation drive transformer, the SiC drive control circuit and a switch power supply main power circuit, wherein the PWM drive circuit generates PWM drive signals to the primary side of the isolation drive transformer, the secondary side of the isolation drive transformer is connected with an input port of the SiC drive control circuit, and the output of the SiC drive control circuit is connected with a drive pin of the SiC switch tube in the switch power supply main power circuit; according to the driving control circuit of the SiC switching tube, the voltage stabilizing diode and the capacitor are connected in parallel, so that the SiC switching tube is turned off at a negative voltage, false turn-on caused by interference when the SiC switching tube is turned off is prevented, meanwhile, the turn-on pull-down SiC driving loop of the switching tube is controlled through one signal, so that the current path of the turn-off loop of the SiC driving Vgs is shortest, the anti-interference capability of the SiC driving is enhanced, the reliability of the SiC switching tube is improved, and the circuit is simple in structure and strong in universality.
Description
Technical Field
The utility model relates to the field of switching power supplies, in particular to a SiC switching tube driving control circuit in a switching power supply.
Background
At present, the switching power supply is widely applied to power electronic equipment, especially the rapid development of the existing new energy electric automobile, drives the rapid growth of the switching power supply industry, comprises electric charging piles, vehicle-mounted power supplies and the like, and belongs to switching power supplies which are all composed of devices such as power switching tubes, transformers, inductors, capacitors and the like, wherein the SiC switching tubes are used as a main component of the power switching tubes, and are most widely applied to high-power electric charging piles and vehicle-mounted power supplies. The SiC switching tube has the technical advantages of small reverse recovery current, small parasitic capacitance, high switching speed, etc., but needs to face some problems at the same time, such as: the on-off voltage of the SiC switching tube is not easy to realize, the SiC switching tube is required to be fully conducted by increasing the Vgs voltage of the SiC switching tube, the Vgs voltage of the SiC switching tube is required to be reduced to be low enough, the SiC switching tube can be fully turned off, and meanwhile, the switching speed of the SiC switching tube is very high, so that some interference problems can be caused.
In order to solve the problems, the utility model provides a drive control circuit of a SiC switching tube in a switching power supply.
Disclosure of Invention
The utility model solves the technical problem of providing a drive control circuit of a SiC switching tube in a switching power supply.
The technical scheme adopted by the utility model for solving the technical problems is as follows:
the utility model provides a drive control circuit of SiC switch tube in switching power supply, this circuit contains PWM drive circuit, isolation drive transformer, siC drive control circuit, switching power supply main power circuit, PWM drive circuit produces PWM drive signal and gives isolation drive transformer's primary side, and isolation drive transformer's secondary is connected the input port of SiC drive control circuit, and the drive foot of SiC switch tube in the drive control circuit of SiC drive connection switching power supply main power circuit.
Further, the SiC switching tube is a high-power N-type silicon carbide MOS tube.
Further, the switching power supply main power circuit comprises a first SiC switching tube, a second SiC switching tube, an output inductor and an output capacitor, wherein the drain electrode of the first SiC switching tube is connected with the positive end of the input voltage, the source electrode of the first SiC switching tube is connected with the drain electrode of the second SiC switching tube and one end of the output inductor, the other end of the output inductor is connected with one end of the output capacitor and the positive end of the output voltage, and the other ends of the source electrode of the second SiC switching tube and the output capacitor are connected with the negative end of the output voltage of the switching power supply and then grounded.
Further, the secondary side of the isolation driving transformer comprises a first secondary side winding and a second secondary side winding, and the outputs of the two secondary side windings are opposite and are respectively coupled with the primary side winding.
Further, the SiC drive control circuit comprises a first group of drive control circuits and a second group of drive control circuits, which respectively provide drive control signals to the drive pins of the first SiC switch tube and the drive pins of the second SiC switch tube,
the first group of driving control circuits comprise a first resistor, a second resistor, a third resistor, a first capacitor, a first diode, an N-type third MOS tube, a first voltage stabilizing tube and a second voltage stabilizing tube, one end of the first resistor is connected with one end of a first secondary winding of the isolation driving transformer, the first capacitor is connected with the first voltage stabilizing tube in parallel, one end (the cathode of the first voltage stabilizing tube faces) of the first resistor is connected with the other end of the first resistor and the drain electrode of the third MOS tube, the other end of the first capacitor is connected with a driving pin (grid) of the first SiC switching tube and one end of the second resistor, the source electrode of the third MOS tube, the anode of the second voltage stabilizing tube and the other end of the second resistor are connected with the source electrode of the first SiC switching tube together, the grid electrode of the third MOS tube is connected with the anode of the first diode and one end of the third resistor, and the cathode of the first diode, the other end of the third resistor and the cathode of the second voltage stabilizing tube are connected with the other end of the first secondary winding of the isolation driving transformer;
the second group of driving control circuits comprises a fourth resistor, a fifth resistor, a sixth resistor, a second capacitor, a second diode, an N-type fourth MOS tube, a third voltage stabilizing tube and a fourth voltage stabilizing tube, one end of the fourth resistor is connected with one end of a second secondary winding of the isolation driving transformer, the second capacitor and the third voltage stabilizing tube are connected in parallel, one end (cathode direction of the third voltage stabilizing tube) of the second resistor is connected with the other end of the fourth resistor and the drain electrode of the fourth MOS tube, the other end is connected with a driving pin (grid electrode) of the second SiC switching tube and one end of the fifth resistor, the source electrode of the fourth MOS tube, the anode of the fourth voltage stabilizing tube and the other end of the fifth resistor are connected with the source electrode of the second SiC switching tube together, the grid electrode of the fourth MOS tube is connected with the anode of the second diode and one end of the sixth resistor, and the cathode of the second diode, the other end of the sixth resistor and the cathode of the fourth voltage stabilizing tube are connected with the other end of the second secondary winding of the isolation driving transformer.
Compared with the prior art, the utility model has the following technical effects:
the utility model provides a drive control circuit of a SiC switch tube in a switch power supply, which is characterized in that a voltage stabilizing diode and a capacitor are connected in parallel, so that when the drive circuit turns off the SiC switch tube, a negative voltage turn-off is formed on Vgs of the SiC switch tube, the situation that the SiC switch tube is turned on by mistake due to interference when the SiC switch tube is turned off is prevented, meanwhile, a signal is used for controlling the turn-on of the switch tube, and a SiC drive loop is pulled down, so that the current path of the turn-off loop of the SiC drive Vgs is shortest, the anti-interference capability of the SiC drive is enhanced, and the reliability of the SiC switch tube is improved.
Drawings
Fig. 1 is a schematic diagram of a driving control circuit of a SiC switching tube in a switching power supply according to the present utility model.
Description of the embodiments
Embodiments of the circuit of the present utility model are described below in detail with reference to the accompanying drawings.
In the following fig. 1, a SiC switching tube driving control circuit in a switching power supply includes a PWM driving circuit, an isolation driving transformer 10, a SiC driving control circuit 20, and a switching power supply main power circuit 30, where the circuit 30 includes a first SiC switching tube Q1, a second SiC switching tube Q2, an output inductor L1, and an output capacitor Co, Q1 and Q2 are high-power N-type silicon carbide MOS tubes, a drain electrode of Q1 is connected to a positive terminal vin+ of an input voltage, a source electrode is connected to a drain electrode of Q2 and one end of L1, another end of L1 is connected to one end of Co and a positive terminal vo+ of an output voltage, a source electrode of Q2, and another end of the output capacitor is connected to a negative terminal Vo-, vo-of the switching power supply output voltage.
The secondary side of the isolation driving transformer 10 includes a first secondary side winding and a second secondary side winding, each coupled to the primary side winding.
The lines 20 comprise a first set of drive control lines and a second set of drive control lines, providing drive control signals to the drive pins of Q1 and Q2 respectively,
the first group of driving control circuits comprises a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a first diode D1, an N-type third MOS tube Q3, a first voltage stabilizing tube ZD1 and a second voltage stabilizing tube ZD2, one end of R1 is connected with one end of a first secondary winding of the isolation driving transformer, the other end of R1 is connected with the drain electrode of Q3, one end of C1 and the cathode of ZD1, C1 is connected in parallel with ZD1, the other end of C1 and the anode of ZD1 are connected with the driving pin (grid electrode) of Q1 and one end of R2, the source electrode of Q3, the anode of ZD2 and the other end of R2 are connected with the source electrode of Q1 together, the grid electrode of Q3 is connected with the anode of D1 and one end of R3, the cathode of D1, the other end of R3 and the cathode of ZD2 are connected with the other end of the first secondary winding of the isolation driving transformer;
the second group of driving control circuits comprises a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a second capacitor C2, a second diode D2, an N-type fourth MOS tube Q4, a third voltage stabilizing tube ZD3 and a fourth voltage stabilizing tube ZD4, one end of R4 is connected with one end of a second secondary winding of the isolation driving transformer, the other end of R4 is connected with the drain electrode of Q4, one end of C2 and the cathode of ZD3, C2 is connected with ZD3 in parallel, the other end of C2 and the anode of ZD3 are connected with the driving pin (grid) of Q2 and one end of R5, the source electrode of Q4, the anode of ZD4 and the other end of R5 are connected with the source electrode of Q2 together, the grid electrode of Q4 is connected with one end of R6, the cathode of D2, the other end of R6 and the cathode of ZD4 are connected with the other end of the second secondary winding of the isolation driving transformer.
Working principle of SiC switching tube driving control circuit: .
In the utility model, a T1 in a drive control circuit of the SiC switching tube is an isolation drive transformer, a primary side of the T1 is connected with a PWM drive circuit to provide PWM drive signals, a secondary side of the T1 is provided with two independent windings respectively coupled with the primary side and responsible for replacing the PWM drive signals from the primary side, and the two secondary side windings are reversely output and respectively connected with drive pins of the SiC switching tube Q1 and the SiC switching tube Q2. When the primary side of the isolation driving transformer outputs a high level, a first group of driving control circuits work, and the first group of driving control circuits are taken as an example for description, R1 is connected in series between one end of a first secondary side winding and C1, so that the driving current is reduced, the driving current is prevented from being excessively large instantaneously, C1 and ZD1 are connected in parallel, when the high level of the transformer T1 is received, the high level passes through C1 and ZD1, ZD1 forms a stable voltage level to be stabilized at two ends of C1, and the voltage value is determined by the turn ratio of the transformer and is reduced to a driving pin of Q1 through a certain voltage, and the driving pin of Q1 has enough voltage to enable Q1 to be conducted; the MOS tube Q3 is a signal control switch tube, the grid electrode of the MOS tube is connected with the other end of the first secondary winding of the transformer T1 through a resistor R3 and a diode D1, the source electrode of the Q3 is connected with the source electrode of the SiC switch tube Q1, the drain electrode is connected with the other end of the R1, when the different-name end of the transformer T1 is high, the high level is conducted through the grid electrodes of R3 to Q3, the Q3 is conducted, the voltage at two ends of the capacitor C1 is loaded between the grid electrode (G) and the source electrode (S) of the SiC switch tube Q1, the voltage Vgs between the GS of the SiC switch tube Q1 is enabled to obtain a stable negative voltage, the SiC switch tube Q1 is enabled to realize negative voltage turn-off, the Q3, the C1 and the ZD1 are 3 independent devices, and when the PCB is distributed, the driving pins of the switch tube Q3, the capacitor C1 and the SiC switch tube Q1 are placed close as much as possible, when the signal control switch tube Q3 is conducted, the current loop formed by turning off the driving signal of the SiC switch tube Q1 is enabled, and the anti-interference capability of the SiC driving signal is enhanced.
When the primary side of the isolation driving transformer outputs a low level, the second group of driving control circuits work, and the working principle is the same as that described above, and the description is omitted here.
While particular implementations of the present utility model have been described above, it will be appreciated by those skilled in the art that these are merely illustrative, and that many changes and modifications may be made to these implementations without departing from the principles and spirit of the utility model. Accordingly, the scope of the utility model is defined by the appended claims.
Claims (4)
1. The driving control circuit of the SiC switch tube in the switch power supply is characterized by comprising a PWM driving circuit, an isolation driving transformer, the SiC driving control circuit and a switch power supply main power circuit, wherein the PWM driving circuit generates PWM driving signals to the primary side of the isolation driving transformer, the secondary side of the isolation driving transformer is connected with an input port of the SiC driving control circuit, and the output of the SiC driving control circuit is connected with a driving pin of the SiC switch tube in the switch power supply main power circuit;
the first group of drive control lines comprise a first resistor, a second resistor, a third resistor, a first capacitor, a first diode and an N-type third MOS tube, one end of the first resistor is connected with one end of a first secondary winding of an isolation driving transformer, the first capacitor is connected with the first voltage stabilizing tube in parallel, the cathode of the first voltage stabilizing tube is connected with the other end of the first resistor and the drain electrode of the third MOS tube, the anode of the first voltage stabilizing tube is connected with one end of the first resistor, the source electrode of the third MOS tube, the anode of the second voltage stabilizing tube and the other end of the second resistor are connected with the source electrode of the first SiC switch tube together, the grid electrode of the third MOS tube is connected with one end of the first secondary winding of the isolation driving transformer, and the cathode of the second resistor is connected with the other end of the isolation transformer;
the second group of driving control circuits comprise a fourth resistor, a fifth resistor, a sixth resistor, a second capacitor, a second diode, an N-type fourth MOS tube, a third voltage stabilizing tube and a fourth voltage stabilizing tube, one end of the fourth resistor is connected with one end of a second secondary winding of the isolation driving transformer, the second capacitor is connected with the third voltage stabilizing tube in parallel, the cathode of the third voltage stabilizing tube is connected with the other end of the fourth resistor and the drain electrode of the fourth MOS tube, the anode of the third voltage stabilizing tube is connected with the driving pin of the second SiC switching tube and one end of the fifth resistor, the source electrode of the fourth MOS tube, the anode of the fourth voltage stabilizing tube and the other end of the fifth resistor are connected with the source electrode of the second SiC switching tube together, the grid electrode of the fourth MOS tube is connected with one end of the anode of the second diode and one end of the sixth resistor, and the cathode of the second diode, the other end of the sixth resistor and the cathode of the fourth voltage stabilizing tube are connected with the other end of the secondary winding of the isolation driving transformer.
2. The SiC switching tube driving control circuit of claim 1, wherein the SiC switching tube is a high power N-type silicon carbide MOS tube.
3. The SiC switching tube driving control circuit of claim 1, in which the switching power supply main power circuit includes a first SiC switching tube, a second SiC switching tube, an output inductor and an output capacitor, the drain electrode of the first SiC switching tube is connected to the positive terminal of the input voltage, the source electrode is connected to the drain electrode of the second SiC switching tube and one end of the output inductor, the other end of the output inductor is connected to one end of the output capacitor and the positive terminal of the output voltage, and the source electrode of the second SiC switching tube and the other end of the output capacitor are connected to the negative terminal of the output voltage of the switching power supply and then grounded.
4. A SiC switching tube driving control circuit in a switching power supply according to claim 1, wherein the secondary side of said isolation driving transformer comprises a first secondary side winding and a second secondary side winding, the outputs of the two secondary side windings being reversed and coupled to the primary side windings, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321428074.6U CN220440557U (en) | 2023-06-07 | 2023-06-07 | SiC switching tube driving control circuit in switching power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321428074.6U CN220440557U (en) | 2023-06-07 | 2023-06-07 | SiC switching tube driving control circuit in switching power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220440557U true CN220440557U (en) | 2024-02-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321428074.6U Active CN220440557U (en) | 2023-06-07 | 2023-06-07 | SiC switching tube driving control circuit in switching power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220440557U (en) |
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2023
- 2023-06-07 CN CN202321428074.6U patent/CN220440557U/en active Active
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