CN220413511U - Wafer heating base and semiconductor film forming equipment - Google Patents

Abstract

The utility model provides a wafer heating base and a semiconductor film forming device. The wafer heating pedestal includes: the base body is used for bearing a wafer; a plurality of conductive posts positioned inside the base body; and the coils are wound on the side wall of each conductive column, are electrically connected and are used for generating induced current to heat the conductive columns so as to heat the wafer. According to the technical scheme, the coil is wound on the side wall of the conductive column, so that the conductive column generates induction current to heat, heating time can be reduced to half an hour from two hours relative to resistance wire heating, energy consumption can be reduced by 2.5 times, heating efficiency of the wafer base is improved, and energy consumption is saved. In addition, the coil does not generate heat by itself, and the service life of the coil is prolonged. By controlling the frequency of the single eddy current coil, the temperature of the heating base is precisely controlled so as to uniformly heat the wafer.

Description

Wafer heating base and semiconductor film forming equipment

Technical Field

The present utility model relates to the field of semiconductors, and more particularly, to a wafer heating base and a semiconductor film forming apparatus.

Background

In the semiconductor film forming apparatus, the wafer heating base is used for not only carrying the wafer, but also heating the wafer to improve the quality and yield of film growth in the film forming process. The existing wafer heating base adopts a resistance wire heater embedded in a base body to heat the base body in a heat radiation mode, and then the temperature of the wafer is raised through heat conduction.

Referring to fig. 1 to 2, fig. 1 is a schematic structural diagram of a wafer heating susceptor in the prior art, and fig. 2 is a schematic layout of heating elements in the susceptor body in the prior art. As shown in fig. 1, the wafer heating susceptor includes a susceptor body 11 and a heating element 12 disposed inside the susceptor body 11. The base body 11 is used for carrying a wafer 10. The heating element 12 is disposed in the base body 11 at a side close to the wafer 10. As shown in fig. 2, a plurality of heating elements 12 are provided inside the base body 11, and heat is transferred to the wafer 10 by heat radiation, so that the wafer 10 is heated to a temperature required for a film formation process.

However, the current wafer heating susceptor adopts a resistance wire heater as the heating element 12, and the susceptor body 11 is heated up by heat radiation, which takes a long time to rise from room temperature to a high temperature state required for the process; the resistance wire is easy to age due to working at a high temperature state, and consumes more energy; and the surface temperature of the base body 11 near the wafer 10 is not uniform, so that the precise control of the surface temperature cannot be performed, and the quality of the process progress and the film growth is affected.

Therefore, how to improve the wafer heating base, shorten the heating time, reduce the heating energy consumption, and make the surface temperature of the base more uniform is a problem to be solved at present.

Disclosure of Invention

The utility model aims to solve the technical problems of improving a wafer heating base, shortening the heating time, reducing the heating energy consumption, enabling the surface temperature of the base to be more uniform and providing a wafer heating base and a semiconductor film forming device.

In order to solve the above problems, the present utility model provides a wafer heating susceptor, comprising: the base body is used for bearing a wafer; a plurality of conductive posts positioned inside the base body; and the coils are wound on the side wall of each conductive column, are electrically connected and are used for generating induced current to heat the conductive columns so as to heat the wafer.

In some embodiments, the coil is an eddy current coil to which high frequency alternating current is applied.

In some embodiments, the wafer heating susceptor is capable of controlling the temperature of the susceptor body by controlling the frequency of the high frequency alternating current fed through a single one of the coils.

In some embodiments, the wafer comprises a wafer, and a thermal insulating layer is positioned on one side of the inner portion of the base body, which is far away from the wafer.

In some embodiments, the conductive posts are located on a side of the interior of the base body proximate to the wafer and are uniformly distributed.

In some embodiments, the conductive posts are metal cylinders.

In some embodiments, the material of the base body is ceramic.

In some embodiments, the wafer heating pedestal further comprises a securing grip for securing the wafer to a surface of the pedestal body.

In some embodiments, the wafer heating pedestal further comprises an electrostatic chuck for attracting the wafer to a surface of the pedestal body.

In order to solve the problems, the utility model provides a semiconductor film forming device, which comprises the wafer heating base.

According to the technical scheme, the coil is wound on the side wall of the conductive column, so that the conductive column generates induction current to heat, heating time can be reduced to half an hour from two hours relative to resistance wire heating, energy consumption can be reduced by 2.5 times, heating efficiency of the wafer base is improved, and energy consumption is saved. In addition, the coil does not generate heat by itself, and the service life of the coil is prolonged. By controlling the frequency of the single eddy current coil, the temperature of the heating base is precisely controlled so as to uniformly heat the wafer.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the utility model as claimed. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the drawings that are required to be used in the description of the embodiments will be briefly described. It is apparent that the drawings in the following description are only some specific embodiments of the present utility model, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.

Fig. 1 is a schematic structure of a wafer heating susceptor in the prior art.

Fig. 2 is a schematic layout of a heating element in the base body according to the prior art.

FIG. 3 is a schematic view of a wafer heating pedestal according to an embodiment of the present utility model.

FIG. 4 is a schematic layout view of an embodiment of the heating element of the present utility model inside the base body.

Fig. 5 is a schematic structural view of another embodiment of a wafer heating susceptor according to the present utility model.

FIG. 6 is a schematic diagram of a semiconductor film forming apparatus according to an embodiment of the utility model.

Detailed Description

The technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to fall within the scope of the utility model.

Referring to fig. 3 to 4, fig. 3 is a schematic structural diagram of an embodiment of a wafer heating base according to the present utility model; FIG. 4 is a schematic layout view of an embodiment of the heating element of the present utility model inside the base body.

As shown in fig. 3, the wafer heating susceptor includes: a base body 31, a conductive post 32, and a coil 33. The base body 31 is used for carrying the wafer 30. A plurality of the conductive posts 32 are located inside the base body 31. A plurality of coils 33 are wound around the side walls of each conductive post 32, and the coils 33 are electrically connected to heat the wafer 30 by heating the conductive posts 32 by induced current.

According to the technical scheme, the coil 33 is wound on the side wall of the conductive column 32, so that the conductive column 32 generates induction current to heat, the heating time can be reduced from two hours to half an hour relative to resistance wire heating, the energy consumption can be reduced by 2.5 times, the heating efficiency of the wafer base is improved, and the energy consumption is saved. In addition, the coil 33 itself does not generate heat, increasing the service life of the coil 33.

In some embodiments, the coil 33 is an eddy current coil to which high frequency alternating current is applied. An eddy current coil is wound on the side wall of the conductive post 32, and is connected with high-frequency alternating current, so that an alternating magnetic field is generated by the eddy current coil. Since the conductive post 32 in the middle of the coil 33 is a closed circuit which can be equivalently formed into a circle in the circumferential direction, and the magnetic flux in the closed circuit is continuously changed, induced electromotive force and induced current are generated in the circumferential direction of the conductive post 32, and the direction of the current is rotated along the circumferential direction of the conductive post 32, just like a vortex of a circle, and the induced current generated by electromagnetic induction generated inside the conductive post 32 is called an eddy current. Since the resistance of the conductive post 32 is small, the coil 33 on the side wall of the conductive post 32 is supplied with an alternating current, so that strong eddy current is generated, and a large amount of joule heat is generated.

In some embodiments, the wafer heating susceptor is capable of controlling the temperature of the susceptor body 31 by controlling the frequency of the high frequency alternating current fed through the single coil 33. By controlling the frequency of the single eddy current coil, precise control of the temperature of the heating base is achieved to uniformly heat the wafer 30.

In some embodiments, a thermal insulating layer 34 is further included on a side of the interior of the base body 31 remote from the wafer 30. The thermal insulation layer 34 is provided, so that heat generated by the conductive columns 32 is reduced from being transmitted to one side, away from the wafer 30, of the base body 31, heat loss is reduced, and heating energy consumption is further reduced.

In some embodiments, the conductive posts 32 are located on a side of the interior of the base body 31 near the wafer 30 and are uniformly distributed. As shown in fig. 3, the conductive posts 32 are located at a side of the base body 31 near the wafer 30, so as to reduce loss during heat transfer and reduce heating energy consumption. As shown in fig. 4, the conductive posts 32 are uniformly distributed inside the susceptor body 31 to uniformly heat the wafer 30.

In some embodiments, the conductive posts 32 are metal cylinders; the material of the base body 31 is ceramic. The ceramic is adopted as the base body 31, and the conductive posts 32 made of metal are combined, so that heat loss can be reduced to the greatest extent, and energy consumption is reduced.

In this embodiment, the wafer heating susceptor further includes a fixing grip 35 for fixing the wafer 30 to the surface of the susceptor body 31. The wafer 30 is fixed to the surface of the base body 31 by a fixing grip to prevent the wafer 30 from slipping off. The fixed gripper 35 may be a mechanical chuck gripper. The number of the fixing fingers 35 may be two or three, and the fixing fingers 35 may be uniformly distributed along the side surface of the base body 31, so as to clamp and fix the wafer 30 on the surface of the base body 31.

Fig. 5 is a schematic structural diagram of a wafer heating pedestal according to another embodiment of the utility model. Unlike the embodiments described in fig. 3-4, the wafer heating pedestal may also be configured to adhere the wafer 50 to the surface of the pedestal body 51 via an electrostatic chuck 55. The electrostatic chuck 55 may be a bipolar electrostatic chuck including a first electrode 551 and a second electrode 552. The first electrode 551 and the second electrode 552 are connected to an external power source through metal wires, and are respectively connected to the positive and negative electrodes of the external power source. In this embodiment, the first electrode 551 is connected to the positive electrode of the power source, and the second electrode 552 is connected to the negative electrode of the power source. The first electrode 551 and the second electrode 552 are capable of polarizing and adsorbing and fixing the wafer 50 on the surface of the wafer heating base in a conductive state.

As shown in fig. 5, the wafer heating susceptor includes: a base body 51, a conductive post 52, and a coil 53. The base body 51 is used for carrying the wafer 50. A plurality of the conductive posts 52 are located inside the base body 51. The plurality of coils 53 are wound around the side wall of each conductive post 52, and the coils 53 are electrically connected to heat the wafer 50 by generating an induced current in the conductive posts 52.

According to the technical scheme, the coil 53 is wound on the side wall of the conductive column 52, so that the conductive column 52 generates induction current to heat, the heating time can be reduced from two hours to half an hour relative to resistance wire heating, the energy consumption can be reduced by 2.5 times, the heating efficiency of the wafer base is improved, and the energy consumption is saved. In addition, the coil 53 itself does not generate heat, increasing the service life of the coil 53.

In some embodiments, the coil 53 is an eddy current coil to which high frequency alternating current is applied. An eddy current coil is wound on the side wall of the conductive post 52, and is connected with high-frequency alternating current, so that an alternating magnetic field is generated by the eddy current coil. Since the conductive post 52 in the middle of the coil 53 is a closed circuit which can be equivalently formed into a circle in the circumferential direction, the magnetic flux in the closed circuit is continuously changed, so that induced electromotive force and induced current are generated in the circumferential direction of the conductive post 52, and the direction of the current is rotated along the circumferential direction of the conductive post 52. Since the resistance of the conductive post 52 is small, the coil 53 on the side wall of the conductive post 52 is supplied with an alternating current, which generates strong eddy current and thus generates a large amount of joule heat.

In some embodiments, the wafer heating susceptor is capable of controlling the temperature of the susceptor body 51 by controlling the frequency of the high frequency alternating current fed through the single coil 53. By controlling the frequency of the single eddy current coil, precise control of the temperature of the heating pedestal is achieved to uniformly heat the wafer 50.

In some embodiments, a thermal insulating layer 54 is further included on a side of the interior of the base body 51 remote from the wafer 50. The thermal insulation layer 54 is provided, so that heat generated by the conductive columns 52 is reduced from being transmitted to one side, away from the wafer 50, of the base body 51, heat loss is reduced, and heating energy consumption is further reduced.

In some embodiments, the conductive posts 52 are located on a side of the interior of the base body 51 near the wafer 50 and are uniformly distributed. As shown in fig. 5, the conductive posts 52 are located at a side of the base body 51 near the wafer 50, so as to reduce loss during heat transfer and reduce heating energy consumption. The conductive posts 52 are uniformly distributed inside the susceptor body 51 to uniformly heat the wafer 50.

In some embodiments, the conductive posts 52 are metal cylinders; the material of the base body 51 is ceramic. By adopting ceramic as the base body 51 and combining the conductive posts 52 made of metal, the heat loss can be reduced to the greatest extent, and the energy consumption can be reduced.

Based on the same thought, the utility model also provides a semiconductor film forming device.

Please refer to fig. 6, which is a schematic diagram illustrating a structure of an embodiment of the semiconductor film forming apparatus according to the present utility model. As shown in fig. 6, the semiconductor film forming apparatus 60 includes: a wafer heating susceptor 61; the wafer heating base 61 is shown in fig. 3 to 5, and is described in detail in the foregoing, and will not be described herein.

According to the technical scheme, the coil is wound on the side wall of the conductive column, so that the conductive column generates induction current to heat, heating time can be reduced to half an hour from two hours relative to resistance wire heating, energy consumption can be reduced by 2.5 times, heating efficiency of the wafer base is improved, and energy consumption is saved. In addition, the coil does not generate heat by itself, and the service life of the coil is prolonged. By controlling the frequency of the single eddy current coil, the temperature of the heating base is precisely controlled so as to uniformly heat the wafer.

It should be noted that references in the specification to "one embodiment," "an example embodiment," "some embodiments," etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the relevant art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.

Generally, the terms may be understood, at least in part, from the usage in the context. For example, the term "one or more" as used herein, depending at least in part on the context, may be used to describe any feature, structure, or characteristic in a singular sense, or may be used to describe a feature, structure, or combination of features in a plural sense. Similarly, terms such as "a," "an," or "the" may also be construed to express singular usage or plural usage depending at least in part on the context. In addition, the term "based on" may be understood as not necessarily intended to express a set of exclusive factors, but may instead, depending at least in part on the context, allow for other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected/coupled" means not only that one component is directly coupled to another component, but also that one component is indirectly coupled to another component through intervening components.

It should be noted that the terms "comprising" and "having" and their variants are referred to in the document of the present utility model and are intended to cover non-exclusive inclusion. The terms "first," "second," and the like are used to distinguish similar objects and not necessarily to describe a particular order or sequence unless otherwise indicated by context, it should be understood that the data so used may be interchanged where appropriate. In addition, the embodiments of the present utility model and the features in the embodiments may be combined with each other without collision. In addition, in the above description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the present utility model. In the foregoing embodiments, each embodiment is mainly described for differences from other embodiments, and the same/similar parts between the embodiments are referred to each other.

The foregoing is merely a preferred embodiment of the present utility model and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present utility model, which are intended to be comprehended within the scope of the present utility model.

Claims (10)

1. A wafer heating pedestal, comprising:

the base body is used for bearing a wafer;

a plurality of conductive posts positioned inside the base body;

and the coils are wound on the side wall of each conductive column, are electrically connected and are used for generating induced current to heat the conductive columns so as to heat the wafer.

2. The wafer heating pedestal of claim 1 wherein the coil is an eddy current coil to which high frequency alternating current is applied.

3. The wafer heating pedestal of claim 2 wherein the wafer heating pedestal is capable of controlling the temperature of the pedestal body by controlling the frequency of the high frequency alternating current fed by a single one of the coils.

4. The wafer heating pedestal of claim 1, further comprising a thermal barrier layer located on a side of the interior of the pedestal body remote from the wafer.

5. The wafer heating pedestal of claim 1, wherein the conductive posts are located on a side of the interior of the pedestal body proximate the wafer and are uniformly distributed.

6. The wafer heating pedestal of claim 1 wherein the conductive posts are metal cylinders.

7. The wafer heating pedestal of claim 1 wherein the material of the pedestal body is ceramic.

8. The wafer heating pedestal of claim 1, further comprising a securing grip for securing the wafer to a surface of the pedestal body.

9. The wafer heating pedestal of claim 1, further comprising an electrostatic chuck for attracting the wafer to a surface of the pedestal body.

10. A semiconductor film forming apparatus comprising the wafer heating susceptor according to any one of claims 1 to 9.