CN114521035B - Direct induction heating device and heating method for wafer - Google Patents
Direct induction heating device and heating method for wafer Download PDFInfo
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- CN114521035B CN114521035B CN202011293519.5A CN202011293519A CN114521035B CN 114521035 B CN114521035 B CN 114521035B CN 202011293519 A CN202011293519 A CN 202011293519A CN 114521035 B CN114521035 B CN 114521035B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 106
- 230000006698 induction Effects 0.000 title claims abstract description 70
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- 230000005291 magnetic effect Effects 0.000 claims abstract description 61
- 230000035515 penetration Effects 0.000 claims description 30
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- 230000035699 permeability Effects 0.000 claims description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 230000005292 diamagnetic effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 142
- 238000001816 cooling Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Electromagnetism (AREA)
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- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
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Abstract
The invention discloses a direct induction heating device and a direct induction heating method for a wafer, belongs to the technical field of semiconductors, and aims to solve the problems that in the prior art, the heating speed is low and the heating depth is uncontrollable in an indirect induction heating mode for the wafer. The direct induction heating device for the wafer comprises an alternating magnetic beam generating assembly, wherein alternating magnetic beams are generated by utilizing alternating current of the alternating magnetic beam generating assembly, the wafer is placed in the alternating magnetic beams generated by the alternating magnetic beam generating assembly, eddy current is generated in the wafer placed in the alternating magnetic beams, and the eddy current generates Joule heat through the wafer to heat the wafer. The direct induction heating method of the wafer comprises the following steps: alternating magnetic beams are generated by utilizing alternating current, a wafer is placed in the alternating magnetic beams, eddy current is generated in the wafer, the eddy current passes through the wafer to generate Joule heat, and the wafer is heated. The direct induction heating device and the heating method for the wafer can be used for direct induction heating of the wafer.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a direct induction heating device and a heating method for wafers.
Background
In the semiconductor manufacturing process, it is necessary to repeatedly etch to form a narrow and deep hole, and then fill the hole by a planarization process, and in the above process, since the wafer temperature affects the yield of the product, it is very important to maintain an appropriate wafer temperature. In the etching process, the wafer is divided into more than two temperature control areas according to the requirement of maintaining the temperature uniformity of the wafer, and a fine temperature control technology is required. As semiconductor manufacturing processes become smaller, holes to be etched are deeper and narrower than before, and efforts in various aspects are required to improve the profile of the holes.
In the existing photolithography process, the wafer is heated by indirect induction, specifically, the wafer is placed on a carbon chuck, which is heated by a working coil. By adopting an indirect induction heating mode, a working coil for heating needs to be additionally arranged, the heating speed is low, and the heating depth is uncontrollable.
Disclosure of Invention
In view of the above analysis, the present invention aims to provide a direct induction heating device and a heating method for a wafer, which are used for solving the problems of slow heating speed and uncontrollable heating depth of an indirect induction heating mode for a wafer in the prior art.
The aim of the invention is mainly realized by the following technical scheme:
the invention provides a direct induction heating device for a wafer, which comprises an alternating magnetic beam generating assembly, wherein alternating magnetic beams are generated by utilizing alternating current of the alternating magnetic beam generating assembly, the wafer is placed in the alternating magnetic beams generated by the alternating magnetic beam generating assembly, eddy current is generated in the wafer placed in the alternating magnetic beams, and the eddy current generates Joule heat through the wafer to heat the wafer.
Further, the direct induction heating device of the wafer further comprises an operation part for automatically calculating the frequency of the alternating current according to the current penetration depth of the required eddy current.
Further, the frequency of the alternating current is calculated according to the current penetration depth by adopting the following formula:
where δ is the current penetration depth, ρ is the intrinsic resistance of the material (μΩ·cm), f is the frequency of the alternating current (Hz), μs is the specific permeability, c is the speed of light, and m is the mass.
Further, the ferromagnetic substance μs > 1, the magnetonormal substance μs≡1, and the antimagnetic substance μs fact (μs < 1).
Further, the direct induction heating device for the wafer further comprises a temperature sensing part and a control part, wherein the control part acquires wafer temperature data acquired by the temperature sensing part and compares the wafer temperature data with a threshold range.
Further, the direct induction heating device of the wafer further comprises an alarm connected with the control part, and when the temperature data of the wafer is lower than or exceeds a threshold range, the controller controls the alarm to alarm.
Further, the alternating magnetic beam generating assembly comprises an alternating power supply assembly and a working coil connected with the alternating power supply assembly, and the wafer is placed in the alternating magnetic beam generated by the working coil.
Further, the working coil is made of metal and transfers heat in an electric mode.
Further, the working coil is divided into an inner region close to the axis of the working coil and an outer region close to the edge, the inter-turn distance of the working coil in the outer region is larger than that of the working coil in the inner region, and the distribution density of the working coil in the outer region is larger than that in the inner region.
Further, a distance between the work coil located in the outer region and the wafer is smaller than a distance between the work coil located in the inner region and the wafer.
Further, the inter-turn distance of the work coil gradually decreases along the center-to-edge direction of the work coil.
Further, the distance between the work coil and the wafer is gradually reduced along the center-to-edge direction of the work coil.
Further, the alternating power supply assembly comprises an alternating power supply, a rectifier and an inverter, wherein the inverter is connected with the working coil, alternating current generated by the alternating power supply is converted into direct current through the rectifier, and the direct current is converted into high-frequency alternating current through the inverter and is communicated with the working coil.
Further, the ac power source is a commercial ac power source.
Further, the inverter is a vacuum tube, a motor, a silicon controlled rectifier, a transformer rectifier, an insulated gate bipolar transistor or an electrostatic induction transistor.
Further, impurities are implanted into the wafer.
Further, the impurity is Al, mg or Be.
Further, the wafer is a P-type doped wafer or an N-type doped wafer.
Further, the direct induction heating device further comprises a heater arranged below the working coil, the heater is divided into a plurality of temperature control areas along the horizontal direction, and each temperature control area is correspondingly provided with a temperature controller.
Further, when the sputtering process is used for processing the wafer, the heater is an infrared heater.
Further, when the wafer is processed by a vapor deposition method of plasma enhanced chemistry, the heater is an electromagnetic heater.
Further, an insulating layer is provided between the work coil and the wafer.
Further, the insulating layer is made of ceramic or quartz materials.
Further, the direct induction heating device for the wafer further comprises an electrostatic chuck for fixing the wafer.
Further, the direct induction heating apparatus further includes a substrate laminated under the working coil.
Further, the substrate comprises a substrate body, a cooling pipeline and a power supply terminal, wherein the cooling pipeline and the power supply terminal are arranged on the substrate body, the power supply terminal is used for being connected with an external power supply, and cooling fluid is communicated in the cooling pipeline and used for cooling the heated wafer.
Further, the substrate body is an Al substrate.
The invention also provides a direct induction heating method of the wafer, which comprises the following steps:
alternating magnetic beams are generated by utilizing alternating current, a wafer is placed in the alternating magnetic beams, eddy current is generated in the wafer, the eddy current passes through the wafer to generate Joule heat, and the wafer is heated.
Further, the heating method further comprises the following steps: the frequency of the alternating current is calculated from the penetration depth of the required eddy current.
The frequency of the alternating current is calculated according to the current penetration depth by adopting the following formula:
where δ is the current penetration depth, ρ is the intrinsic resistance of the material (μΩ·cm), f is the frequency of the alternating current (Hz), μs is the specific permeability [ ferromagnetic μs > 1, normal magnetic μs≡1, diamagnetic μs≡1 ], c is the speed of light, and m is the mass (kg).
Compared with the prior art, the invention has at least one of the following beneficial effects:
a) The direct induction heating device for the wafer provided by the invention adopts a direct induction heating mode, utilizes the alternating magnetic beam generating component to generate the alternating magnetic beam, generates eddy current due to the existence of induction current, and can generate Joule heat when the eddy current passes through the inherent impedance of the wafer, thereby realizing the self heating of the wafer without an additional heater, having the characteristic of rapid heating and being capable of reducing the time required by heating.
b) The direct induction heating device for the wafer belongs to self-heating of the wafer, so that even if the wafer is not tightly attached to a heating component (such as a chuck), the direct induction heating of the wafer can be realized, and the phenomenon that the wafer cannot be heated due to misalignment of the wafer position can be avoided.
c) According to the direct induction heating device for the wafer, provided by the invention, the penetration depth of eddy current can be changed by adjusting the frequency of alternating magnetic beams, so that the heating depth of the wafer is controlled, therefore, the temperature control distinction of the direct induction heating device for the wafer is not a plane area, but a vertical area, the accurate control of the wafer heating can be realized, the heating depth of the wafer can be accurately adjusted according to an actual process, and the profile process of the wafer is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, like reference numerals being used to refer to like parts throughout the several views.
FIG. 1 is a schematic diagram of a direct induction heating apparatus for wafers according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a direct induction heating apparatus for wafers according to an embodiment of the invention.
Reference numerals:
1-wafer; 2-working coils; 3-an alternating current power supply; a 4-rectifier; a 5-inverter; 6-a heater; 7-an insulating layer; 8-a substrate; 9-alternating magnetic beam; 10-eddy current.
Detailed Description
Preferred embodiments of the present invention are described in detail below with reference to the attached drawing figures, which form a part of the present invention and are used in conjunction with the embodiments of the present invention to illustrate the principles of the present invention.
Example 1
The embodiment provides a direct induction heating device for a wafer, referring to fig. 1 to 2, the direct induction heating device comprises an alternating magnetic beam generating component, an alternating magnetic beam 9 is generated by utilizing alternating current of the alternating magnetic beam generating component, the wafer 1 is placed in the alternating magnetic beam 9 generated by the alternating magnetic beam generating component, eddy current 10 is generated by the wafer 1 placed in the alternating magnetic beam 9, joule heat is generated by the eddy current 10 through the wafer 1, and the wafer 1 is heated.
Compared with the prior art, the direct induction heating device for the wafer provided by the embodiment adopts a direct induction heating mode, the alternating magnetic beam generating component is utilized to generate the alternating magnetic beam 9, the wafer 1 placed in the alternating magnetic beam 9 can generate the eddy current 10 due to the existence of induction current, and when the eddy current 10 passes through the inherent impedance of the wafer 1, the Joule heat can be generated, so that the self heating of the wafer 1 can be realized, an additional heater is not needed, the rapid heating device has the characteristic of rapid heating, and the time required for heating can be reduced. Meanwhile, since the direct induction heating device for the wafer belongs to self-heating of the wafer 1, even if the wafer 1 is not tightly attached to a heating component (e.g. a chuck), direct induction heating of the wafer 1 can be realized, and thus the phenomenon that the wafer 1 cannot be heated due to misalignment can be avoided.
In addition, by adjusting the frequency of the alternating magnetic beam 9, the penetration depth of the eddy current 10 can be changed, and the heating depth of the wafer 1 can be controlled, so that the distinction of the temperature control of the direct induction heating device of the wafer in this embodiment is not a planar area, but a vertical area, thereby realizing the precise control of the heating of the wafer 1, precisely adjusting the heating depth of the wafer 1 according to the actual process, and improving the profile process of the wafer 1.
Because the relationship of the skin effect can intensively heat the surface of the wafer 1, the penetration depth can be adjusted by adjusting the frequency of the alternating magnetic beam 9, and the higher the frequency of the alternating current is, the lower the penetration depth is. In order to automatically calculate the penetration depth of the eddy current 10, that is, the heating depth of the wafer 1, the above-mentioned direct induction heating apparatus for a wafer further includes an operation part (not shown) for automatically calculating the frequency of the alternating current according to the penetration depth of the desired eddy current 10.
The frequency of the alternating current is calculated according to the current penetration depth by adopting the following formula:
where δ is the current penetration depth, ρ is the intrinsic resistance of the material (μΩ·cm), f is the frequency of the alternating current (Hz), μs is the specific permeability [ ferromagnetic μs > 1, normal magnetic μs≡1, diamagnetic μs≡1 ], c is the speed of light, and m is the mass (kg).
Knowing the intrinsic resistance of the doped wafer 1, the frequency of penetration depth can be calculated. Illustratively, when using a frequency of 2.45Mhz, the current penetration depth can be controlled to the micrometer level, that is, with the direct induction heating apparatus for wafers provided by the present embodiment, the current penetration depth can be precisely controlled to be set below micrometers below millimeters.
In order to maintain the temperature stability of the wafer 1 during the heating process, the direct induction heating device for the wafer further comprises a temperature sensing part (not shown in the figure) and a control part (not shown in the figure), wherein the control part acquires the wafer temperature data acquired by the temperature sensing part, compares the wafer temperature data with a threshold range, and sends an alarm when the wafer temperature data is lower than or exceeds the threshold range, so that an operator can adjust the overall temperature of the wafer 1 in time.
It will be appreciated that, in order to enable the above-mentioned direct induction heating device for a wafer to have an alarm function, the above-mentioned direct induction heating device for a wafer further includes an alarm (not shown in the figure), where the alarm is connected to the control portion, and when the temperature data of the wafer is lower than or exceeds a threshold range, the controller controls the alarm to alarm.
The structure of the alternating magnetic beam generating assembly specifically comprises an alternating power supply assembly and a working coil 2 connected with the alternating power supply assembly, wherein a wafer 1 is arranged above the working coil 2, and the alternating magnetic beam 9 generated by the working coil 2 is arranged in the wafer. In this way, the ac generated by the ac power supply assembly is conducted to the working coil 2 to generate an alternating magnetic flux 9 and an alternating magnetic flux, and an eddy current 10 is generated in the wafer 1 located in the alternating magnetic flux 9, and joule heat can be generated when the eddy current 10 passes through the inherent impedance of the wafer 1, so that direct induction heating of the wafer 1 is realized.
In order to form alternating magnetic flux, the working coil 2 is made of low-resistance metal and transfers heat by electric power.
Considering that the alternating magnetic flux 9 is concentrated at the center of the working coil 2, the heating temperature of the wafer 1 corresponding to the center position of the working coil 2 is higher, and in order to improve the heating uniformity of the wafer 1, the eddy current 10 density at the edge of the wafer 1 is lower than the eddy current 10 density at the center of the wafer 1, so that the working coil 2 is divided into an inner area close to the axis of the working coil 2 and an outer area close to the edge, and the inter-turn distance of the working coil 2 positioned at the outer area is greater than the inter-turn distance of the working coil 2 positioned at the inner area, that is, the distribution density of the working coil 2 positioned at the outer area is greater than the distribution density of the working coil 2 positioned at the inner area; alternatively, the distance between the working coil 2 located in the outer region and the wafer 1 is smaller than the distance between the working coil 2 located in the inner region and the wafer 1, that is, the wafer 1 adopting such a structure is of a three-dimensional structure; alternatively, the inter-turn distance of the work coil 2 gradually decreases along the center-to-edge direction of the work coil 2; alternatively, the distance between the work coil 2 and the wafer 1 gradually decreases in the center-to-edge direction of the work coil 2.
In view of the requirement of miniaturization of the wafer 1, the above alternating current power supply assembly includes, for example, an alternating current power supply 3 (for example, a commercial alternating current power supply), a rectifier 4, and an inverter 5, the inverter 5 is connected to the work coil 2, the alternating current generated by the alternating current power supply 3 is converted into direct current by the rectifier 4, the direct current is converted into high frequency alternating current by the inverter 5 to be supplied to the work coil 2, and it is to be noted that, in the above formula, f (frequency of alternating current) refers to the frequency of the high frequency alternating current. This is because the higher the frequency of the alternating magnetic flux 9 of the work coil 2, the smaller the penetration depth, and the smaller the heating depth of the wafer 1, the alternating current supplied from the alternating current power source 3 can be converted into high frequency alternating current through the rectifier 4 and the inverter 5, thereby reducing the heating depth of the wafer 1, so that the above-mentioned direct induction heating device for the wafer is more suitable for the miniaturized wafer 1.
The inverter 5 is illustratively a vacuum tube, a Motor (Motor), a device with adjustable frequency, such as a Silicon Controlled Rectifier (SCR), a Transformer Rectifier (TR), an Insulated Gate Bipolar Transistor (IGBT), and an electrostatic induction transistor (SIT), which can rotate the Motor to invert the current to an ac, and in practical applications, may be selected according to practical requirements.
In order to further increase the direct induction heating speed of the wafer 1, impurities such as Al, mg, be, etc. are injected into the wafer 1, because the direct induction heating of the wafer 1 is performed by generating eddy current 10 in the alternating magnetic beam 9 due to the induced current, but the bare silicon wafer 1 is used as a semiconductor, free electrons thereof are less, the generated eddy current 10 is less, and the induction heating speed is slower. In the semiconductor process, not only free electrons or holes are generated by injecting impurities into the wafer 1 (e.g., a silicon wafer), but also a state in which heating can be induced is formed in the wafer 1 where many impurity films (e.g., metal films) are deposited.
Illustratively, wafer 1 is a P-doped wafer or an N-doped wafer, and the electrons are moved sufficiently so that heating can be induced; the NP type is obtained by doping different impurities in silicon, the N type is multi-electron and is generally doped with P (phosphorus), and the P type is multi-hole and is generally doped with B (boron).
In order to control the overall temperature of the wafer 1, the direct induction heating device further comprises a heater 6 arranged below the working coil 2, wherein the heater 6 is divided into a plurality of temperature control areas along the horizontal direction, and each temperature control area is correspondingly provided with a temperature controller, so that independent controllable heating of each temperature control area is realized.
Specifically, the types of the heaters 6 are different for the processing process of the wafer 1, and for example, when the wafer 1 is processed by a sputtering process, an infrared heater is used for the heaters 6, and when the wafer 1 is processed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, an electromagnetic heater is used for the heaters 6.
Since insulation is required between the wafer 1 and the work coil 2 in order to generate an induced current on the wafer 1, an insulation layer 7 (or dielectric layer) is provided between the work coil 2 and the wafer 1, typically made of ceramic or quartz material, and the wafer 1 and the work coil 2 can be isolated from each other by providing the insulation layer 7, so that the two are prevented from being electrically connected to each other, and an eddy current 10 can be generated on the wafer 1 by the alternating magnetic flux 9 generated by the work coil 2.
The above-described direct induction heating apparatus for wafers also includes an electrostatic chuck (electrostatic chuck; ESC) for holding the wafer 1, and it is noted that the electrode or heater 6 may be inserted into the electrostatic chuck in view of compactness of the structure. The electrode is used for sucking the wafer 1 in the manufacturing process, the heater 6 is a temperature control unit on the electrostatic chuck, the electrode and the heater 6 are both made of Cu with good conductivity, and the like, and the material has low magnetic permeability and cannot absorb a magnetic field, so that induction heating of the wafer 1 is not affected.
It can be understood that, in order to ensure the structural stability of the direct induction heating apparatus, the direct induction heating apparatus further comprises a substrate 8 stacked under the working coil 2, and other components in the direct induction heating apparatus are supported by the substrate 8, so as to improve the structural stability of the direct induction heating apparatus.
Specifically, the substrate 8 includes a substrate body (for example, an Al substrate), a cooling line and a power terminal disposed on the substrate body, the power terminal is used for being connected to an external power source, the external power source is used for heating the electrostatic chuck by electric power, and a cooling fluid (for example, cooling water) is introduced into the cooling line for cooling the heated wafer 1.
Example two
The embodiment provides a direct induction heating method of a wafer, which comprises the following steps:
alternating magnetic beams are generated by utilizing alternating current, a wafer is placed in the alternating magnetic beams, eddy current is generated in the wafer, the eddy current passes through the wafer to generate Joule heat, and the wafer is heated.
Compared with the prior art, the beneficial effects of the direct induction heating method for the wafer provided by the embodiment are basically the same as those of the direct induction heating device for the wafer provided by the embodiment one, and are not described in detail herein.
Specifically, because the relationship of the skin effect will intensively heat the surface of the wafer, the penetration depth can be adjusted by adjusting the frequency of the alternating magnetic beam 9, and the higher the frequency of the alternating current is, the lower the penetration depth is, so the heating method further comprises the following steps: the frequency of the alternating current is calculated from the penetration depth of the required eddy current.
The frequency of the alternating current is calculated according to the current penetration depth by adopting the following formula:
where δ is the current penetration depth, ρ is the intrinsic resistance of the material (μΩ·cm), f is the frequency of the alternating current (Hz), μs is the specific permeability [ ferromagnetic μs > 1, normal magnetic μs≡1, diamagnetic μs≡1 ], c is the speed of light, and m is the mass (kg).
Knowing the intrinsic resistance of the doped wafer 1, the frequency of penetration depth can be calculated. Illustratively, when a frequency of 2.45Mhz is utilized, the current penetration depth can be controlled to the micrometer level, that is, the current penetration depth can be precisely controlled to below a millimeter and below a micrometer by the direct induction heating method of the wafer provided by the present embodiment.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.
Claims (8)
1. The direct induction heating method of the wafer adopts a direct induction heating device of the wafer, the direct induction heating device of the wafer comprises an alternating magnetic beam generating component, alternating magnetic beams are generated by utilizing alternating current of the alternating magnetic beam generating component, the wafer is placed in the alternating magnetic beams generated by the alternating magnetic beam generating component, eddy current is generated in the wafer, and the eddy current generates joule heat through the wafer to heat the wafer;
the alternating magnetic beam generating assembly comprises an alternating power supply assembly and a working coil connected with the alternating power supply assembly, the wafer is arranged in the alternating magnetic beam generated by the working coil, and the wafer is arranged above the working coil;
the direct induction heating device of the wafer further comprises a substrate which is laminated below the working coil;
the direct induction heating method comprises the following steps:
alternating magnetic beams are generated by utilizing alternating current, a wafer is placed in the alternating magnetic beams, eddy current is generated in the wafer, joule heat is generated by the eddy current through the wafer, and the wafer is heated;
the frequency of the alternating current is calculated according to the current penetration depth by adopting the following formula:
wherein, delta is the current penetration depth, ρ is the inherent resistance of the material, μΩ.cm, f is the frequency of alternating current, hz, μs is the specific permeability [ ferromagnetic μs > 1, normal magnetic μs is about 1, diamagnetic μs is about (μs < 1) ], c is the light velocity, m is the mass, kg;
when the frequency of the alternating current was 2.45Mhz, the current penetration depth was controlled to the micrometer level.
2. The method of claim 1, further comprising an algorithm for automatically calculating the frequency of the alternating current based on the current penetration depth of the desired eddy current.
3. The method of claim 1, further comprising a temperature sensor and a controller, wherein the controller obtains wafer temperature data collected by the temperature sensor and compares the wafer temperature data to a threshold range.
4. The method of claim 3, further comprising an alarm coupled to the control, the controller controlling the alarm to alarm when the wafer temperature data falls below or exceeds a threshold range.
5. The method of direct induction heating of a wafer of claim 1, wherein the work coil is divided into an inner region near the work coil axis and an outer region near the edge;
the inter-turn distance of the working coil in the outer area is larger than that of the working coil in the inner area;
alternatively, the distance between the work coil located in the outer region and the wafer is smaller than the distance between the work coil located in the inner region and the wafer.
6. The method of direct induction heating of a wafer of claim 1, wherein the inter-turn distance of the work coil is gradually reduced along the center-to-edge direction of the work coil;
alternatively, the distance between the work coil and the wafer is gradually reduced along the center-to-edge direction of the work coil.
7. The direct induction heating method of wafer according to claim 1, wherein the ac power supply assembly comprises an ac power supply, a rectifier and an inverter, the inverter being connected to the work coil, the ac power generated by the ac power supply being converted into dc power by the rectifier, the dc power being converted into high frequency ac power by the inverter and being supplied to the work coil.
8. The method of claim 1, wherein an insulating layer is disposed between the working coil and the wafer.
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