CN220393990U - Multichannel uniform gas supply device for silicon carbide crystal growth furnace - Google Patents
Multichannel uniform gas supply device for silicon carbide crystal growth furnace Download PDFInfo
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- CN220393990U CN220393990U CN202322090788.7U CN202322090788U CN220393990U CN 220393990 U CN220393990 U CN 220393990U CN 202322090788 U CN202322090788 U CN 202322090788U CN 220393990 U CN220393990 U CN 220393990U
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- air inlet
- upper air
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- 239000013078 crystal Substances 0.000 title claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 68
- 239000011261 inert gas Substances 0.000 claims abstract description 22
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 230000029058 respiratory gaseous exchange Effects 0.000 claims description 8
- 230000000630 rising effect Effects 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 abstract description 13
- 230000008025 crystallization Effects 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of crystal growth furnaces and discloses a multichannel uniform gas supply device of a silicon carbide crystal growth furnace, which comprises a crucible, a crucible cover, an electromagnetic induction coil, an upper gas inlet pipe and a lower gas inlet pipe, wherein a boss for mounting crystal seeds is processed at the bottom of the crucible cover, the upper gas inlet pipe, the lower gas inlet pipe and the upper gas inlet pipe are respectively assembled on the crucible cover, the lower pipe orifice of the upper gas inlet pipe and the lower pipe orifice of the upper gas inlet pipe are opposite to the crystal seeds, the lower pipe orifice of the lower gas inlet pipe is mutually perpendicular to the lower pipe orifice of the upper gas inlet pipe, the bottom of the lower gas inlet pipe is close to the surface of powder, and ball valves are respectively arranged on the upper gas inlet pipe, the upper gas inlet pipe and the upper gas inlet pipe. The inert gas is injected into the crucible in a way that the inert gas concentration around the seed is higher, impurities in crystallization are removed, stability in crystallization is improved, silicon carbide steam below moves upwards to the seed more easily, and finally, the crucible is cooled and crystallized, so that the inert gas in the crucible is more easily and uniformly distributed in the crucible.
Description
Technical Field
The utility model relates to the technical field of crystal growth furnaces, in particular to a multichannel uniform air supply device of a silicon carbide crystal growth furnace.
Background
Silicon carbide growth furnaces are one of the key devices used to produce semiconductor materials. In the crystal growth furnace, by pyrolyzing the silicon raw material, a high-quality single crystal silicon rod can be grown for manufacturing semiconductor devices.
In the early development stage of the silicon carbide crystal growth furnace, the gas supply device generally adopts a single-channel gas supply mode, namely, gas is introduced into a hearth through a single gas inlet. However, because the space in the hearth is large and the shape is complex, the problem of uneven gas distribution exists in single-channel gas supply, and the temperature and the composition in the growth of the silicon rod are uneven. With the progress of technology, the multichannel uniform gas supply device is gradually applied to the silicon carbide crystal growth furnace. The device realizes the uniform distribution of the gas in the hearth by arranging a plurality of gas inlets in the hearth and adopting a special design and control mode. The multichannel uniform gas supply device not only improves the growth quality of the silicon rod, but also improves the production efficiency and stability.
Most of the current crystal growth furnace air supply devices need to be added with a cooling ring on a top cover of a crucible to ensure that evaporated steam moves upwards and is condensed into crystals when meeting condensation, the structure consumes more energy, the gas near the crystals cannot be directly cooled, the cooling effect is not obvious, and the traditional crystal growth furnace is mainly supplied with single-channel air, so that the uniform air supply inside the crystal growth furnace cannot be realized.
Disclosure of Invention
The technical problems to be solved are as follows: aiming at the defects of the prior art, the utility model provides a multichannel uniform gas supply device for a silicon carbide crystal growth furnace, which has the advantages of low energy consumption, obvious cooling effect, more contribution to removing other gas impurities, improving crystallization stability and uniform gas supply through double channels, and solves the problems that the traditional crystal growth furnace has more energy consumption, can not directly cool the gas near the crystal, has an unobvious cooling effect and can not realize uniform gas supply inside the crystal growth furnace through single channels.
(II) technical scheme: in order to achieve the purposes of low energy consumption, obvious cooling effect, more favorable removal of other gas impurities, improved crystallization stability and uniform double-channel gas supply, the utility model provides the following technical scheme: the utility model provides a long brilliant stove multichannel even air feeder of carborundum, includes crucible, crucible lid, electromagnetic induction coil, goes up the intake pipe, goes up breathing pipe, lower intake pipe, the crucible place with electromagnetic induction coil's centre position, the crucible lid assembly is on the crucible, the processing of crucible lid bottom has the boss of installation seed, the processing has three through-hole on the crucible lid, be equipped with respectively in the through-hole and go up intake pipe, last breathing pipe, lower intake pipe, the lower mouth of pipe of going up the intake pipe is just to the seed, the lower mouth of pipe of lower intake pipe and the lower mouth of pipe mutually perpendicular of last intake pipe, the bottom of intake pipe is close to the carborundum powder surface down, go up intake pipe, go up the upper portion of breathing pipe, intake pipe down installs the ball valve respectively.
Preferably, the upper air inlet pipe, the upper air suction pipe and the lower air inlet pipe are quartz pipes.
Preferably, the upper air inlet pipe is slidably assembled on the crucible cover, and the lower pipe orifice of the upper air inlet pipe is always aligned to the bottom end of the seed.
Preferably, the inert gas filled in the upper air inlet pipe is cool gas after cooling treatment.
Preferably, the inert gas filled in the lower air inlet pipe is hot gas after temperature rising treatment.
Preferably, an expanded graphite ring is assembled in the through hole, and the upper air inlet pipe, the upper air suction pipe and the lower air inlet pipe are fixedly arranged in the expanded graphite ring.
(III) beneficial effects: compared with the prior art, the utility model provides the multichannel uniform gas supply device for the silicon carbide crystal growth furnace, which has the following beneficial effects:
1. this multichannel even air feeder of long brilliant stove of carborundum, through the cooperation use of last intake pipe, lower intake pipe, the inert gas that goes up the intake pipe and fills is the cold gas after the cooling treatment, can directly reduce the temperature around the seed, realizes the cooling crystallization of carborundum to this gas rushes into the mode and makes inert gas concentration around the seed higher, and it is even to distribute, is favorable to getting rid of impurity when crystallization, improves the stability when crystallization.
2. This multichannel even air feeder of long brilliant stove of carborundum, through crucible, the crucible lid, go up the intake pipe, go up the breathing pipe, down intake pipe, the cooperation of ball valve is used, go up intake pipe and down intake pipe respectively to the cold inert gas and hot inert gas of rushing into in the crucible, make the carborundum steam of below upwards move to seed department more easily, cooling down the crystallization at last, second cooperation goes up the suction inert gas of breathing pipe, make the inside inert gas of crucible present spiral rising, more easily make inside inert gas evenly distributed in the inside of crucible, finally cooperation ball valve's use, can control air input and inspiration volume, remain the inside steady state of atmospheric pressure of crucible and the state of getting rid of the gas in real time all the time.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a cross-sectional view of the structure of the present utility model;
FIG. 3 is a schematic top view of the airflow of the internal structure of the present utility model;
FIG. 4 is a schematic diagram showing the flow of air in front view of the internal structure of the present utility model.
In the figure: 1 crucible, 2 crucible cover, 3 upper intake pipe, 4 upper intake pipe, 5 lower intake pipe, 6 electromagnetic induction coil, 7 through-hole, 8 expanded graphite ring, 9 ball valve, 10 boss, 11 seed.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-2, a multichannel uniform gas supply device for a silicon carbide crystal growing furnace comprises a crucible 1, a crucible cover 2, an electromagnetic induction coil 6, an upper gas inlet pipe 3, an upper gas suction pipe 4 and a lower gas inlet pipe 5, wherein the crucible 1 is placed at the middle position of the electromagnetic induction coil 6, and the heating effect of the electromagnetic induction coil 6 can provide a required high-temperature environment to promote the growth of crystals. The crucible cover 2 is assembled on the crucible 1, and the structural design of the crucible cover 2 and the crucible 1 can provide sealing protection in the crystal growth process and prevent impurities from entering so as to ensure the crystal quality. The boss 10 for installing the seed 11 is processed at the bottom of the crucible cover 2, and the seed 11 can be conveniently installed by the design of the boss 10, so that the seed 11 is stably fixed at the bottom of the crucible cover 2. Three through holes 7 are processed on the crucible cover 2, an upper air inlet pipe 3, an upper air inlet pipe 4 and a lower air inlet pipe 5 are respectively assembled in the through holes 7, ball valves 9 are respectively arranged on the upper parts of the upper air inlet pipe 3, the upper air inlet pipe 4 and the lower air inlet pipe 5, the through holes 7 are used for providing gas inlets and outlets, atmosphere and pressure can be regulated through the control of the ball valves 9 so as to meet the requirement of the crystal growth process on the atmosphere, and the design of the upper air inlet pipe 3 and the upper air inlet pipe 4 can be used for supplying and extracting specific gases such as atmosphere gases or reaction gases. The lower pipe orifice of the upper air inlet pipe 3 is opposite to the seed 11, the lower pipe orifice of the upper air suction pipe 4 is opposite to the seed 11, and the lower air inlet pipe 5 is close to the surface of the silicon carbide powder material and is used for supplying the sublimation source or other reaction gases in the crystal growth process. The lower pipe orifice of the lower air inlet pipe 5 is mutually perpendicular to the lower pipe orifice of the upper air inlet pipe 3, and the bottom of the lower air inlet pipe 5 is close to the surface of the silicon carbide powder. The upper air inlet pipe 3, the upper air suction pipe 4 and the lower air inlet pipe 5 are quartz pipes. The quartz tube is used as the material of the upper air inlet tube 3, the upper air inlet tube 4 and the lower air inlet tube 5, has the characteristics of high temperature resistance and corrosion resistance, and is suitable for the high temperature and inert atmosphere environment of the silicon carbide crystal growth furnace. The upper air inlet pipe 3 is slidably assembled on the crucible cover 2, and the lower pipe orifice of the upper air inlet pipe 3 is always aligned with the bottom end of the seed 11. The upper air inlet pipe 3 is slidably assembled on the crucible cover 2, so that the lower pipe orifice of the upper air inlet pipe is always aligned with the bottom end of the seed 11, and accurate supply of air is ensured. The inert gas filled in the upper air inlet pipe 3 is cold gas after cooling treatment. The temperature around the upper air inlet pipe 3 can be reduced by filling the upper air inlet pipe 3 with cool air after the cooling treatment, and the premature thermal damage of the seed 11 is prevented. The inert gas filled in the lower air inlet pipe 5 is hot gas after the temperature rising treatment. The hot gas after the temperature rising treatment is filled into the lower air inlet pipe 5, so that a heating effect can be provided to help the temperature rising in the crystal growth process. The through hole 7 is internally provided with an expanded graphite ring 8, and the upper air inlet pipe 3, the upper air suction pipe 4 and the lower air inlet pipe 5 are fixedly arranged in the expanded graphite ring 8. The function of the through-hole 7 fitted with the expanded graphite ring 8 is to provide a sealing effect against gas leakage. The upper air inlet pipe 3, the upper air suction pipe 4 and the lower air inlet pipe 5 are fixedly arranged in the expanded graphite ring 8, so that the stability and the accuracy of the air inlet and outlet channels can be ensured. The expanded graphite ring 8 has high-temperature wear resistance and can maintain stable sealing effect in a high-temperature environment.
The working principle is that first, the crucible 1 is placed at the right intermediate position of the electromagnetic induction coil 6, and the crucible cover 2 is mounted on the crucible 1. The bottom of the crucible cover 2 has a boss 10 for mounting a seed 11. Three through holes 7 are formed in the crucible cover 2 for assembling the upper inlet pipe 3, the upper suction pipe 4 and the lower inlet pipe 5, respectively. Quartz tubes may be used for these tubes. The lower opening of the upper air inlet pipe 3 is aligned with the bottom end of the seed 11, and the lower opening of the upper air suction pipe 4 is also aligned with the bottom end of the seed 11. The lower opening of the lower air inlet pipe 5 is perpendicular to the lower opening of the upper air inlet pipe 3, and the bottom of the lower air inlet pipe 5 is close to the surface of the silicon carbide powder, and the broken line in fig. 2 and 4 shows the surface of the silicon carbide powder. The upper part of the upper air inlet pipe 3, the upper air suction pipe 4 and the lower air inlet pipe 5 are respectively provided with ball valves 9 for controlling the flow of the air. The gas filled in the upper air inlet pipe 3 is cool gas after cooling treatment, and the gas filled in the lower air inlet pipe 5 is hot gas after heating treatment, so that the temperature control of the crystal can be realized. The through hole 7 is equipped with an expanded graphite ring 8 for fixing and supporting the upper intake pipe 3, the upper intake pipe 4, and the lower intake pipe 5. Through the device structure, the multichannel uniform air supply in the silicon carbide crystal growth furnace can be realized. The gas in each channel realizes the control of flow through controlling the switch of the ball valve 9, thereby realizing the accurate control of the temperature and atmosphere of crystal growth, improving the quality and uniformity of crystals, reducing energy consumption, enhancing the cooling effect, being more beneficial to removing other gas impurities and improving the crystallization stability.
In summary, this multichannel even air feeder of long brilliant stove of carborundum, through the cooperation use of last intake pipe 3, lower intake pipe 5, the inert gas that goes up intake pipe 3 and fills is the cold gas after the cooling treatment, can directly reduce the temperature around the seed 11, realizes the cooling crystallization of carborundum to this gas mode of punching into makes the inert gas concentration around the seed 11 higher, and the distribution is even, is favorable to getting rid of impurity when crystallization, improves the stability when crystallization. This multichannel even air feeder of long brilliant stove of carborundum, through crucible 1, crucible lid 2, go up intake pipe 3, go up breathing pipe 4, down intake pipe 5, the cooperation of ball valve 9 is used, go up intake pipe 3 and down intake pipe 5 respectively to the crucible 1 in the cold inert gas of rushing into, make the carborundum steam of below upwards move to seed 11 department more easily, finally cool off crystallization, second cooperation is gone up breathing pipe 4's suction inert gas, make the inside inert gas of crucible 1 present spiral and rise, more easily make inside inert gas evenly distributed in the inside of crucible 1, finally cooperation ball valve 9 uses, can control air input and air suction volume, keep the inside steady of atmospheric pressure of crucible 1 and the state of real-time exhaust gas all the time.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a multichannel even air feeder of long brilliant stove of carborundum, includes crucible (1), crucible cover (2), electromagnetic induction coil (6), goes up intake pipe (3), goes up breathing pipe (4), intake pipe (5) down, its characterized in that: the crucible is characterized in that the crucible cover (2) is arranged at the middle position of the electromagnetic induction coil (6), the crucible cover (2) is assembled on the crucible (1), a boss (10) for installing crystal seeds (11) is processed at the bottom of the crucible cover (2), three through holes (7) are processed in the crucible cover (2), an upper air inlet pipe (3), an upper air suction pipe (4) and a lower air suction pipe (5) are respectively assembled in the through holes (7), the lower pipe orifice of the upper air suction pipe (3) is opposite to the crystal seeds (11), the lower pipe orifice of the upper air suction pipe (4) is opposite to the crystal seeds (11), the lower pipe orifice of the lower air suction pipe (5) is mutually perpendicular to the lower pipe orifice of the upper air suction pipe (3), the lower air suction pipe (4) and the upper part of the lower air suction pipe (5) are respectively provided with a ball valve (9) close to the surface of silicon carbide powder.
2. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, wherein: the upper air inlet pipe (3), the upper air suction pipe (4) and the lower air inlet pipe (5) are quartz pipes.
3. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, wherein: the upper air inlet pipe (3) is slidably assembled on the crucible cover (2), and the lower pipe orifice of the upper air inlet pipe (3) is always aligned to the bottom end of the seed (11).
4. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, wherein: inert gas filled in the upper air inlet pipe (3) is cold gas after cooling treatment.
5. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, wherein: inert gas filled in the lower air inlet pipe (5) is hot gas after temperature rising treatment.
6. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, wherein: the through hole (7) is internally provided with an expanded graphite ring (8), and the upper air inlet pipe (3), the upper air suction pipe (4) and the lower air inlet pipe (5) are fixedly arranged in the expanded graphite ring (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322090788.7U CN220393990U (en) | 2023-08-04 | 2023-08-04 | Multichannel uniform gas supply device for silicon carbide crystal growth furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322090788.7U CN220393990U (en) | 2023-08-04 | 2023-08-04 | Multichannel uniform gas supply device for silicon carbide crystal growth furnace |
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| Publication Number | Publication Date |
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| CN220393990U true CN220393990U (en) | 2024-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322090788.7U Active CN220393990U (en) | 2023-08-04 | 2023-08-04 | Multichannel uniform gas supply device for silicon carbide crystal growth furnace |
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| Country | Link |
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| CN (1) | CN220393990U (en) |
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2023
- 2023-08-04 CN CN202322090788.7U patent/CN220393990U/en active Active
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