CN220340085U - Chip surface defect and temperature detection device based on red light illumination and optical filter - Google Patents
Chip surface defect and temperature detection device based on red light illumination and optical filter Download PDFInfo
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- CN220340085U CN220340085U CN202321984901.XU CN202321984901U CN220340085U CN 220340085 U CN220340085 U CN 220340085U CN 202321984901 U CN202321984901 U CN 202321984901U CN 220340085 U CN220340085 U CN 220340085U
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Abstract
The utility model relates to the technical field of semiconductor detection, in particular to a chip surface defect and temperature detection device based on red light illumination and an optical filter, which comprises a bearing table, a red light illumination module and a detection module; the bearing table is used for bearing at least one chip to be detected; the red light illumination module is arranged above the bearing table, emits red light and irradiates the chip to be detected; the detection module is arranged above the red light illumination module, a light path subjected to light splitting treatment is constructed in the detection module, and a temperature measuring area and a detection area are correspondingly formed; the temperature measuring area is correspondingly provided with an infrared temperature measuring module, and a band-limited optical filter is arranged in the infrared temperature measuring module; and the detection area is correspondingly provided with a defect detection module. The utility model is used for detecting surface defects with high precision in the semiconductor chip packaging detection link, and improving the precision and the efficiency of temperature measurement by combining annular red light illumination and optical filters, and has great significance for improving the working performance and the service life of chip materials.
Description
Technical Field
The utility model relates to the technical field of semiconductor detection, in particular to a chip surface defect and temperature detection device based on red light illumination and an optical filter.
Background
The chip industry is a basic stone in the new generation of information field, and the surface packaging of semiconductor chips directly affects the performance of the chips. However, in the chip packaging and detecting process, micro variations of factors such as process parameters often cause defects on the surface of the chip, which affect the normal performance of the chip. And when the surface temperature of the chip is too high, the electronic components inside the chip are affected by thermal stress, so that the performance and the service life of the chip are affected. Therefore, chip surface defect detection and temperature detection are of great significance. However, the traditional chip surface temperature detection method is difficult to meet the requirements of high efficiency and high precision, and the chip surface defect and temperature detection device and method based on red light illumination and an optical filter are provided, so that the temperature measurement precision is effectively improved, and the technology of simultaneous detection is perfected.
Disclosure of Invention
The utility model aims at: the chip surface defect and temperature detection device based on the red light illumination and the optical filter is provided to solve the problem that the efficiency and the precision of chip surface temperature detection in the prior art cannot meet the requirements.
The technical scheme of the utility model is as follows: a chip surface defect and temperature detection device based on red light illumination and an optical filter comprises:
the bearing table is used for bearing at least one chip to be detected;
the red light illumination module is arranged above the bearing table, emits red light and irradiates the chip to be detected;
the detection module is arranged above the red light illumination module, is internally provided with a light path subjected to light splitting treatment, and correspondingly forms a temperature measuring area and a detection area; the temperature measuring area is correspondingly provided with an infrared temperature measuring module, and a band-limited optical filter is arranged in the infrared temperature measuring module; and the detection area is correspondingly provided with a defect detection module.
Preferably, the red light illuminating module adopts an annular red light LED illuminating device, and the wavelength of the emitted red light is 615-650 nm.
Preferably, the detection module comprises a lens, a beam splitting module, an infrared temperature measurement module and a defect detection module.
Preferably, the lens faces to one side of the red light illumination module;
the beam splitting module is internally provided with a beam splitter, and splits the light beam emitted by the lens into two light beams emitted in different directions; the areas emitted by the two different light beams are correspondingly the temperature measuring area and the detection area;
the infrared temperature measuring module and the defect detecting module respectively inject the two light beams emitted by the light splitting module.
Preferably, the end face of the spectroscope, the central axes of the infrared temperature measuring module and the defect detecting module form an included angle of 45 degrees.
Preferably, the surface of the spectroscope is attached with a visible and near infrared wide-spectrum film, and the spectroscope has a spectroscope ratio of 1:1.
preferably, the thickness of the spectroscope is 0.8-1.2 mm, the surface roughness is below 3nm, and the surface parallelism is below 2'.
Preferably, the infrared temperature measuring module adopts an infrared temperature measuring module with the diameter of 8-14 mu m.
Preferably, the defect detection module adopts a CCD camera.
Compared with the prior art, the utility model has the advantages that:
(1) The method is used for detecting the surface defects with high precision in the semiconductor chip packaging detection link, and improving the precision and the efficiency of temperature measurement by combining annular red light illumination and an optical filter, so that the influence of red light on the detection result of the packaged chip is greatly reduced, and the method has great significance in improving the working performance and the service life of the chip material.
(2) The annular red light LED lighting device with the wavelength of 615-650 nm is adopted, the light efficiency can be reserved, the energy loss is reduced, the interference of the temperature caused by red light lighting on the temperature measurement signal is filtered by combining with the band-limited filter, and the band-limited filter cuts off the light of the red light wave band (615-650 nm) and the light of other wave bands passes through. The influence of illumination on the surface temperature of the chip is reduced by combining the two methods so as to obtain more accurate measurement data; meanwhile, since the red light generally generates less heat, the chip can be prevented from being damaged or the test result can be prevented from being affected during the test.
(3) Based on the setting of a spectroscope, the light path is subjected to spectroscopic treatment, and the detection of the same area and same field of view of the surface defect and the temperature of the chip is realized; meanwhile, the beam splitting ratio of the spectroscope reaches 1:1, the two paths of light intensity signals are equal, and the beam splitting effect is better based on the design of the angle, thickness and surface characteristics of the spectroscope.
(4) The detection speed of the single-sided appearance defect of the chip is not lower than 0.2s/pcs; visual inspection resolution 25 μm; the minimum chip surface defect size that can be detected is 0.25mm; the temperature test precision is 0.5 ℃, the detectable temperature range is 0-800 ℃, and the optical temperature measurement is based on, so that the anti-interference capability is strong, the simultaneous detection of the temperature and the surface defects of the chip is realized, and the temperature detection precision and the speed are improved greatly.
Drawings
The utility model is further described below with reference to the accompanying drawings and examples:
fig. 1 is a schematic structural diagram of a chip surface defect and temperature detection device based on red light illumination and an optical filter according to the present utility model.
Wherein: 1. a bearing table 11, a chip to be detected;
2. a red light illumination module;
3. a detection module;
31. the device comprises a lens, 32, a light splitting module, 321, a spectroscope, 33, an infrared temperature measuring module, 331, a band limiting filter, 34 and a defect detecting module.
Detailed Description
The following describes the present utility model in further detail with reference to specific examples:
as shown in FIG. 1, a device for detecting defects and temperatures on a chip surface based on red light illumination and an optical filter comprises a carrying platform 1, a red light illumination module 2 and a detection module 3.
The upper end surface of the bearing table 1 is horizontal and is used for bearing at least one chip 11 to be detected.
The red light illumination module 2 is arranged above the bearing table 1, emits red light and irradiates on the chip 11 to be detected.
In one embodiment, the red light illuminating module 2 adopts an annular red light LED illuminating device, and the wavelength of the emitted red light is 615-650 nm, so that the light efficiency can be maintained, and the energy loss is reduced.
The detection module 3 is arranged above the red light illumination module 2, and is internally provided with a light path which is subjected to light splitting treatment, and a temperature measuring area and a detection area are correspondingly formed.
Specifically, the detection module 3 includes a lens 31, a beam splitting module 32, an infrared temperature measurement module 33, and a defect detection module 34, and a computer for processing collected data is connected to the rear end of the detection module.
The lens 31 faces the red light illumination module 2 side.
The beam splitter module 32 is internally provided with a beam splitter 321, and splits the light beam emitted by the lens 31 into two light beams emitted in different directions; the end face of the spectroscope 321 forms an included angle of 45 degrees with the central axes of the infrared temperature measuring module 33 and the defect detecting module 34, a visible and near infrared wide-spectrum film is attached to the surface of the spectroscope 321, and the spectroscope has a spectroscope ratio of 1:1, two paths of light intensity signals are equal; the thickness of the spectroscope 321 is 0.8-1.2 mm, the surface roughness is less than 3nm, and the surface parallelism is less than 2', so as to achieve better spectroscopic effect.
The areas corresponding to the two different light beams emitted by the spectroscope 321 are a temperature measuring area and a detection area respectively, the temperature measuring area is correspondingly provided with an infrared temperature measuring module 33, and the detection area is correspondingly provided with a defect detection module 34.
The infrared temperature measurement module 33 is an infrared temperature measurement module with the wavelength of 8-14 μm and is used for injecting one beam emitted by the light splitting module 32, and a band-limited filter 331 is arranged in the infrared temperature measurement module 33; the band-limiting filter 331 can filter the interference of the temperature caused by the red light illumination on the temperature measurement signal, and realize the light cut-off of 615-650 nm wave bands, and the light of other wave bands passes through, so that the signals reaching the infrared temperature measurement module 33 are all caused by the surface temperature of the chip 11 to be detected; the band-limiting filter 331 is combined with the red light illumination module 2, so that the influence of illumination on the surface temperature of the chip 11 to be detected can be reduced to obtain more accurate measurement data, according to the Planck blackbody radiation law, the surface temperature of the chip is different, the spectrum of outward radiation is also different, according to the corresponding relation between the spectrum of the radiation on the surface of the chip and the temperature, the temperature of the surface of the chip can be obtained, and as the annular red light for illumination can have some influence on a test temperature signal, the interference of the red light can be eliminated through the band-limiting filter 331, so that the temperature data with higher accuracy can be obtained; meanwhile, since the red light generally generates less heat, it is possible to prevent the chip 11 to be tested from being damaged or to influence the test result during the test.
The infrared temperature measurement module 33 gathers the image of the chip 11 to be detected passing through the band-limiting filter 331 through an optical system, the heat energy is collected on the infrared temperature measurement module 33, the photosensitive element of the infrared temperature measurement module 33 receives the radiant energy of the detected object and converts the radiant energy into an electric signal, and then the electric signal is amplified by an electronic amplifier to form a standard video signal, an infrared thermal image of the chip 11 to be detected is displayed on a display, and the temperature is corrected and calibrated by considering the material emissivity (blackness coefficient) of the chip 11 to be detected and combining the standard blackbody source and the spectral emissivity of the material. The gray value of each point of the processed infrared thermal image corresponds to the radiation energy emitted by the point on the chip 11 to be detected and reaching the photoelectric conversion device, and the radiation temperature value temperature data of each point on the surface of the chip 11 to be detected is obtained based on an algorithm.
The defect detection module 34 adopts a CCD camera for injecting another light beam emitted by the beam splitting module 32; the acquired image is processed by an image processing module connected with the rear end, so that the defect condition of the surface of the chip 11 to be detected is obtained.
In the process of infrared temperature measurement, temperature correction and calibration are combined, firstly, a band-limited filter 331 is adopted to cut off the passing of red light, so that the influence of the red light on temperature detection is eliminated, and all signals reaching an infrared temperature measurement module 33 are brought by the surface temperature of a chip 11 to be detected; secondly, calibrating the lens 31 and the infrared temperature measuring module 33 by using a blackbody source to obtain the image intensity of the chip 11 to be detected, combining the standard blackbody source and the spectral emissivity of the chip material to obtain the linear relation between the image intensity of the surface of the chip 11 to be detected and the absolute radiation intensity of the blackbody source, verifying the result, and finally measuring the maximum relative error of the temperature less than 0.5%.
Under a working scene, an annular red LED lighting device is turned on, and the focal length of the lens 31 and the distance between the lens and the bearing table are adjusted to obtain the clearest object image; the infrared temperature measuring module 33 and the defect detecting module 34 are opened, the light is transmitted to the infrared temperature measuring module 33 after the red light illumination influence is filtered by half of the spectroscope 321 through the band limiting filter 331, the infrared temperature measuring module 33 is calibrated before being transmitted to the infrared temperature measuring module 33, namely, a standard blackbody source is set to different temperatures, the relation between the output gray value and the standard blackbody radiation temperature value detected by the standard blackbody source is analyzed after the obtained data is recorded, then the thermal radiation spectrum of the infrared measurement according to the surface of the chip 11 to be detected is obtained through temperature correction and calibration, and the thermal radiation spectrum is processed by a computer algorithm to judge the radiation temperature value data of each point on the surface of the chip 11 to be detected; the other half of the light is imaged in the defect detection module 34 and transmitted to a computer in real time, the computer stores the temperatures and images of different chips 11 to be detected in a data set, then the corresponding images are called in detection software to detect defects, and the ambient temperature of the chips 11 to be detected is displayed as required.
As a further illustration, based on the combination of the infrared temperature measurement module 33 and the defect detection module 34, three modes of operation are provided in combination with the actual application scenario:
mode one: measuring only defects on the chip surface;
opening the defect detection module 34, and closing the infrared temperature measurement module 33; at this time, when the chip surface defect detection is performed, the light source above the bearing table can be converted into the annular white light LED lighting device, so that the shooting brightness is improved, the definition of the image is improved, and the subsequent defect detection work can be conveniently and smoothly performed.
Mode two: measuring only the temperature of the chip surface;
the infrared temperature measuring module 33 is turned on, and the defect detecting module 34 is turned off; radiation temperature value temperature data of each point on the surface of the chip to be measured are obtained based on the infrared temperature measurement module 33.
Mode three: simultaneously measuring the defects and the temperature of the surface of the chip;
simultaneously, the infrared temperature measuring module 33 and the defect detecting module 34 are turned on, and all relevant data about the defects and the temperatures of the chip surface are acquired.
The chip surface defect and temperature detection device based on the red light illumination and the optical filter has the advantages that the installation is simple and convenient, the detection efficiency is greatly improved, the chip surface defect detection at high temperature or low temperature is significant, meanwhile, the possible problems of the chip at different temperatures can be detected, and the application prospect is wide.
The above embodiments are only for illustrating the technical concept and features of the present utility model, and are intended to enable those skilled in the art to understand the content of the present utility model and implement the same according to the content of the present utility model, and are not intended to limit the scope of the present utility model. It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments and that the present utility model may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it is therefore desired that the present utility model be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (9)
1. The chip surface defect and temperature detection device based on red light illumination and optical filters is characterized by comprising:
the bearing table is used for bearing at least one chip to be detected;
the red light illumination module is arranged above the bearing table, emits red light and irradiates the chip to be detected;
the detection module is arranged above the red light illumination module, is internally provided with a light path subjected to light splitting treatment, and correspondingly forms a temperature measuring area and a detection area; the temperature measuring area is correspondingly provided with an infrared temperature measuring module, and a band-limited optical filter is arranged in the infrared temperature measuring module; and the detection area is correspondingly provided with a defect detection module.
2. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 1, wherein: the red light illuminating module adopts an annular red light LED illuminating device, and the wavelength of the emitted red light is 615-650 nm.
3. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 1, wherein: the detection module comprises a lens, a light splitting module, an infrared temperature measurement module and a defect detection module.
4. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 3, wherein:
the lens faces one side of the red light illumination module;
the beam splitting module is internally provided with a beam splitter, and splits the light beam emitted by the lens into two light beams emitted in different directions; the areas emitted by the two different light beams are correspondingly the temperature measuring area and the detection area;
the infrared temperature measuring module and the defect detecting module respectively inject two light beams emitted by the light splitting module.
5. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 4, wherein: the end face of the spectroscope, the infrared temperature measuring module and the central axis of the defect detecting module form an included angle of 45 degrees.
6. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 5, wherein: the surface of the spectroscope is attached with a visible and near infrared wide-spectrum film, and the spectroscope has a spectroscope ratio of 1:1.
7. the device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 6, wherein: the thickness of the spectroscope is 0.8-1.2 mm, the surface roughness is below 3nm, and the surface parallelism is below 2'.
8. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 4, wherein: the infrared temperature measuring module adopts an infrared temperature measuring module with the diameter of 8-14 mu m.
9. The device for detecting surface defects and temperature of a chip based on red illumination and a filter according to claim 4, wherein: the defect detection module adopts a CCD camera.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321984901.XU CN220340085U (en) | 2023-07-26 | 2023-07-26 | Chip surface defect and temperature detection device based on red light illumination and optical filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321984901.XU CN220340085U (en) | 2023-07-26 | 2023-07-26 | Chip surface defect and temperature detection device based on red light illumination and optical filter |
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| CN220340085U true CN220340085U (en) | 2024-01-12 |
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| CN202321984901.XU Active CN220340085U (en) | 2023-07-26 | 2023-07-26 | Chip surface defect and temperature detection device based on red light illumination and optical filter |
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- 2023-07-26 CN CN202321984901.XU patent/CN220340085U/en active Active
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