CN220318044U - Diffusion furnace - Google Patents

Abstract

The utility model provides a diffusion furnace, which comprises a furnace tube and a plurality of slide glass devices, wherein a diffusion flow channel for diffusion gas to flow is formed in the furnace tube, the diffusion flow channel is provided with a flow channel inlet and a flow channel outlet which are close to two ends of the furnace tube along the extending direction of the furnace tube, the slide glass devices are arranged in the furnace tube and are sequentially arranged along the extending direction of the furnace tube, a plurality of horizontal bearing surfaces which are arranged at intervals along the vertical direction are formed on each slide glass device, the bearing surfaces on each slide glass device are corresponding to and are arranged in a coplanar manner with the bearing surfaces of the adjacent slide glass devices, a guide vane is arranged on the bearing surface of one slide glass device which is close to the flow channel outlet, and the bearing surfaces of the rest slide glass devices are used for placing silicon wafers so that the diffusion gas flowing along the diffusion flow channel flows from the surfaces of the silicon wafers borne by the slide glass devices in the horizontal direction sequentially. Thus, the diffusion gas can be ensured to flow horizontally from the surface of the silicon wafer close to the outlet of the flow passage, and the diffusion sheet resistance uniformity is high.

Description

Diffusion furnace

Technical Field

The utility model relates to the technical field of solar cells, in particular to a diffusion furnace.

Background

Photovoltaic power generation is to directly convert light energy into electric energy by utilizing the photoelectric conversion effect of a solar cell, and a key element of the technology is a solar cell. In the preparation process of the solar cell, the silicon wafer needs to be subjected to multiple working procedures such as texturing, diffusion and knot making, etching, coating, printing, sintering and the like. In the diffusion junction making process, diffusion sheet resistance uniformity is an important index for influencing the quality of the solar cell.

At present, in the conventional diffusion method, as shown in fig. 1, a horizontal diffusion furnace is adopted, a slide device 120a is arranged in a horizontal diffusion furnace 100a, silicon wafers 200 are vertically placed on the slide device 120a, all the silicon wafers 200 are arranged at intervals along the extending direction of the horizontal diffusion furnace 100a, diffusion gas is injected into the horizontal diffusion furnace 100a through an air inlet pipe 150a, flows between two adjacent silicon wafers 200, flows through the silicon wafers 200 along the direction parallel to the surfaces of the silicon wafers 200 for diffusion treatment, and flows out through an air outlet 112a at one end of the horizontal diffusion furnace 100 a. However, the horizontal diffusion furnace 100a has a small number of silicon wafers 200 that can be accommodated at a time and a low productivity.

In order to solve the technical problem, some examples of the related art provide a diffusion furnace in which a plurality of slide devices are provided at intervals along an extending direction thereof, each slide device can carry a plurality of horizontally placed silicon wafers, and the plurality of silicon wafers on the slide devices are arranged at intervals along a vertical direction, the diffusion furnace has an air inlet and an air outlet, the air inlet and the air outlet are respectively close to two ends of the diffusion furnace, so that diffusion gas can flow through each silicon wafer when flowing from the air inlet to the air outlet for diffusion treatment. However, the diffusion sheet resistance difference between the positions of the air inlet and the air outlet is large.

Disclosure of Invention

The utility model aims to at least solve one of the technical problems in the prior art and provides a diffusion furnace.

To achieve the object of the present utility model, there is provided a diffusion furnace comprising: a furnace tube and a plurality of slide devices,

a diffusion flow channel for the flow of diffusion gas is formed in the furnace tube, and is provided with a flow channel inlet and a flow channel outlet which are respectively close to two ends of the furnace tube along the extending direction of the furnace tube;

the slide glass devices are arranged in the furnace tube and sequentially arranged along the extending direction of the furnace tube, a plurality of bearing surfaces which are arranged at intervals along the vertical direction are formed on each slide glass device, the bearing surfaces are parallel to the horizontal plane, the bearing surfaces on each slide glass device are in one-to-one correspondence and coplanar arrangement with the bearing surfaces of the adjacent slide glass devices, the bearing surfaces of one slide glass device which are arranged close to the outlet of the flow channel are provided with guide vanes, and the bearing surfaces of the other slide glass devices are used for placing silicon wafers so that diffusion gas flowing along the diffusion flow channel flows from the surfaces of the silicon wafers borne by the slide glass devices in sequence along the horizontal direction.

The diffusion furnace comprises the top plate, the bottom plate and the supporting piece, wherein the top plate and the bottom plate are oppositely arranged along the vertical direction, the supporting piece extends along the vertical direction, one end of the supporting piece is connected with the top plate, the other end of the supporting piece is connected with the bottom plate, the supporting piece is provided with the plurality of carrying plates, the plurality of carrying plates are arranged at intervals along the vertical direction, and one face of the carrying plates, facing the top plate, is a carrying surface.

The diffusion furnace is characterized in that the size of the guide vane along the extending direction of the furnace tube is smaller than the size of the silicon wafer along the extending direction of the furnace tube.

The diffusion furnace is characterized in that the size of the guide vane along the extending direction of the furnace tube is 1/2 of the size of the silicon wafer along the extending direction of the furnace tube.

The diffusion furnace is characterized in that the size of the guide vane along the extending direction of the furnace tube is not larger than the size of the top plate of the corresponding slide device along the extending direction of the furnace tube, and the orthographic projection of the guide vane on the top plate of the corresponding slide device does not exceed the two ends of the top plate along the extending direction of the furnace tube.

The diffusion furnace is characterized in that one slide device arranged close to the outlet of the flow channel is provided with one supporting piece, the rest slide devices are provided with a plurality of supporting pieces, and the supporting pieces are sequentially arranged along the extending direction of the furnace tube.

The diffusion furnace is characterized in that the slide device is of a symmetrical structure and is symmetrically arranged relative to the plumb plane.

The diffusion furnace is characterized in that the guide vane is a corrosion-resistant guide vane made of corrosion-resistant materials.

The diffusion furnace comprises the diffusion furnace body, wherein one end of the furnace tube is provided with the runner inlet and the through hole, the diffusion furnace body further comprises the exhaust tube, and one end of the exhaust tube penetrates into the furnace tube through the through hole and extends into one side, far away from the runner inlet, of the slide glass device bearing the guide vane.

The diffusion furnace as described above, wherein the diffusion furnace further comprises a boat support disposed in the furnace tube, the boat support being configured to receive a slide device.

The utility model has the following beneficial effects:

according to the diffusion furnace provided by the utility model, the slide glass device is additionally arranged at the downstream of the slide glass device for bearing the silicon wafers, and the bearing surface of the slide glass device is horizontally provided with the guide vane so as to prolong the horizontal flow path of the diffusion gas, so that the diffusion gas can flow from the surface of the silicon wafers close to the outlet of the flow channel in the horizontal direction, and the uniformity of the film layers formed by the silicon wafers is further ensured, and the uniformity of the diffusion sheet resistance of the diffusion furnace is improved.

In addition, the present slide glass device is used for bearing the guide vane so as to guide the diffusion gas to flow horizontally, so that the structure of the uniform flow component is not required to be redesigned, the installation mode of the slide glass device bearing the guide vane in the furnace tube is not required to be redesigned, and the design cost is saved.

Drawings

FIG. 1 is a schematic view of a horizontal diffusion furnace provided as an example of the related art;

FIG. 2 is a schematic view of a diffusion furnace provided by another example of the related art;

FIG. 3 is a front view of a diffusion furnace according to an embodiment of the present disclosure;

FIG. 4 is a cross-sectional view of a diffusion furnace according to an embodiment of the present application;

FIG. 5 is a partial schematic view of the diffusion furnace shown in FIG. 4;

fig. 6 is a schematic perspective view of a carrier device in a diffusion furnace according to an embodiment of the present disclosure;

fig. 7 is a schematic diagram of a relationship between a wafer carrier device and a silicon wafer in a diffusion furnace according to an embodiment of the present application;

fig. 8 is a schematic perspective view of a boat support in a diffusion furnace according to an embodiment of the present application.

Reference numerals illustrate:

a 100-diffusion furnace;

110-furnace tube; 111-flow channel inlet; 112-a flow channel outlet;

120-slide device; 121-top plate; 122-a bottom plate; 123-support; 124-carrier plate;

1241-bearing surface; 1201—first slide device; 1202-a second slide device;

130-an exhaust pipe;

140-boat support; 141-a vertical plate; 142-a first side panel; 143-a second side panel; 144-reinforcing ribs; 145-through holes;

150-a deflector;

200-silicon wafer.

Detailed Description

In order to make the technical scheme of the present utility model better understood by those skilled in the art, the following detailed description of the diffusion furnace provided by the present utility model is provided with reference to the accompanying drawings.

Fig. 2 is a schematic view of a diffusion furnace provided by another example of the related art. When the silicon wafer 200 is subjected to diffusion treatment by using the diffusion furnace 100a shown in fig. 2, it is found that the film layer formed by the silicon wafer 200 near the gas outlet is greatly different from the film layer formed by the silicon wafer 200 near the gas inlet 111 a. The inventors of the present application found through a large number of simulation analyses that the cause of this problem was that: the exhaust tube 130a of the diffusion furnace 100a is installed at the bottom of the furnace tube 110a, and after the diffusion gas flows into the furnace tube 110a from the gas inlet 111a, the diffusion gas flows from one end (right end in fig. 2) of the furnace tube 110a to the other end (left end in fig. 2) of the furnace tube 110a in the horizontal direction, and when the diffusion gas flows to the silicon wafer 200 near the gas outlet, the diffusion gas flows downward (shown by a dotted line in fig. 2) under the suction effect of the exhaust tube 130a, so that the diffusion gas cannot flow through the silicon wafer 200 near the gas outlet in the horizontal direction, that is, the diffusion sheet resistance uniformity of the diffusion furnace 100a is poor.

To solve this technical problem, it is generally easy for those skilled in the art to provide a uniform flow assembly in the furnace tube, and to guide the diffusion gas by using the uniform flow assembly. However, in this way, not only the structure of the uniform flow component but also the installation of the uniform flow component in the furnace tube are required to be additionally designed, and the design cost is high.

In view of this, embodiments of the present application provide a diffusion furnace that adds a feature to enable diffusion gas to flow horizontally through each wafer according to existing designs.

Fig. 3 is a front view of a diffusion furnace according to an embodiment of the present application, fig. 4 is a cross-sectional view of a diffusion furnace according to an embodiment of the present application, and fig. 5 is a partial schematic view of the diffusion furnace shown in fig. 4. Referring to fig. 3, 4 and 5, the diffusion furnace 100 includes a furnace tube 110 and a plurality of slide devices 120 disposed within the furnace tube 110.

The furnace tube 110 is hollow, two ends of the furnace tube 110 along the extending direction thereof are respectively provided with a furnace mouth and a furnace tail, and the slide device 120 can be placed inside the furnace tube 110 from the furnace mouth. The furnace tube 110 has a diffusion flow path formed therein for flowing a diffusion gas, the diffusion flow path having a flow path inlet 111 and a flow path outlet 112, the flow path inlet 111 and the flow path outlet 112 being respectively adjacent to both ends of the furnace tube 110 in an extending direction thereof. As shown in fig. 4, the runner inlet 111 may be disposed at the tail of the furnace tube 110, and the runner outlet 112 is near the furnace mouth; alternatively, the runner outlet 112 may be disposed near the tail of the furnace tube 110, and the runner inlet 111 is disposed at the mouth of the furnace tube 110. The flow channel outlet 112 may be disposed near the bottom of the furnace tube 110, or may be disposed near the top of the furnace tube 110 or at the end of the furnace tube 110, as shown in fig. 4, which is not limited in this embodiment.

The plurality of slide devices 120 are sequentially disposed in the furnace tube 110 along the extending direction of the furnace tube 110. Each slide device 120 has a plurality of bearing surfaces formed thereon, each bearing surface being parallel to a horizontal plane, the plurality of bearing surfaces being disposed at intervals along a vertical direction. And, the bearing surfaces on each slide device 120 are in one-to-one correspondence with and coplanar with the bearing surfaces of the adjacent slide devices 120. Thus, there is a gap between each adjacent two of the bearing surfaces in the vertical direction through which the diffusion gas flows, and the gap formed on each slide device 120 corresponds to and communicates with the gap formed on the adjacent slide device 120.

As shown in fig. 5, the carrying surface of one slide device 120 disposed near the flow channel outlet 112 is used for placing the flow guide 150 horizontally, and the carrying surfaces of the other slide devices 120 are used for placing the silicon wafer 200. Hereinafter, for simplicity of description, one slide device 120 disposed near the flow channel outlet 112 will be referred to as a first slide device 1201, and the remaining slide devices 120 will be referred to as second slide devices 1202. That is, the carrier surface of the first slide 1201 is configured to receive the flow guide 150, and the carrier surface of the second slide 1202 is configured to receive the silicon wafer 200.

Also, the baffle 150 is configured to direct the diffusion gas to flow horizontally across the surface of the silicon wafer 200 carried by the second slide 1202 adjacent to the first slide 1201 such that the diffusion gas flowing along the diffusion flow path can flow in a horizontal direction sequentially across the surface of the silicon wafer 200 carried by the second slide 1202.

As shown in fig. 3 and 4, the diffusion furnace 100 of the present embodiment operates on the following principle: the diffusion gas is injected into the furnace tube 110 from the runner inlet 111, flows to the second slide glass device 1202 close to the runner inlet 111 along the horizontal direction, is divided into a plurality of air flows, and flows to a gap between two adjacent bearing surfaces and flows to a corresponding gap on the other adjacent second slide glass device 1202 along the horizontal direction until flowing to a gap on the second slide glass device 1202 adjacent to the first slide glass device 1201, and each air flow can still keep flowing through the surface of the silicon wafer 200 borne by the second slide glass device 1202 along the horizontal direction under the guidance of the guide sheet 150; then, the diffusion gas flows to the corresponding gap on the first slide device 1201, flows to the runner outlet 112, and is discharged out of the furnace tube 110 through the runner outlet 112.

In the diffusion furnace 100 of the present embodiment, by adding a slide device 120 disposed downstream of the slide device 120 for carrying the silicon wafer 200, and horizontally carrying the guide vane 150 on the carrying surface of the slide device 120, the horizontal flow path of the diffusion gas is prolonged, so that when the diffusion gas flows to the last slide device 120, the diffusion gas is correspondingly carried and is not the silicon wafer 200 but the guide vane 150, and even if the diffusion gas flows to the flow channel outlet 112 from the horizontal direction, the uniformity of the film layer on the silicon wafer 200 is not affected. Thus, it can be ensured that the diffusion gas can flow horizontally from the surface of the silicon wafer 200 near the flow channel outlet 112, so that the uniformity of the film layer formed by each silicon wafer 200 is improved, and the uniformity of the diffusion sheet resistance of the diffusion furnace 100 is improved.

In addition, compared with the method of arranging the uniform flow component in the furnace tube 110 to guide the diffusion gas, the present slide device 120 is used to carry the guide vane 150 to guide the diffusion gas to flow horizontally, so that the present slide device 120 and the guide vane 150 can perform the function of guiding flow, the structure of the uniform flow component does not need to be redesigned, the installation mode of the slide device 120 carrying the guide vane 150 in the furnace tube 110 can also refer to the installation mode of the slide device 120 carrying the silicon wafer 200 in the furnace tube 110, and the design cost is saved.

Fig. 6 is a schematic perspective view of a carrier device 120 in a diffusion furnace 100 according to an embodiment of the present disclosure. Referring to fig. 6, in some embodiments, the slide device 120 includes a top plate 121, a bottom plate 122, and a supporting member 123, where the top plate 121 and the bottom plate 122 are disposed opposite to each other along a vertical direction, the supporting member 123 extends along the vertical direction, one end of the supporting member 123 is connected to the top plate 121, the other end is connected to the bottom plate 122, a plurality of carrying plates 124 are mounted on the supporting member 123, the plurality of carrying plates 124 are disposed at intervals along the vertical direction, and a surface of the carrying plate 124 facing the top plate 121 is a carrying surface 1241.

The supporting member 123 may be a cylindrical structure or a rod structure. In fig. 6, two supporting members 123 are provided, and when the slide device 120 is located in the furnace tube 110, the two supporting members 123 are sequentially spaced along the extending direction of the furnace tube 110, and the two supporting members 123 are respectively located at two sides of the top plate 121 and the bottom plate 122.

A preset distance exists between every two adjacent carrier plates 124 in the vertical direction, and the preset distance is greater than the thickness of the silicon wafer 200 and the guide vane 150, so that the silicon wafer 200 and the guide vane 150 can be placed between the two adjacent carrier plates 124 and positioned on the carrying surface 1241. Each support 123 may have 118 carrier plates 124 disposed thereon.

It will be appreciated that the number of support members 123 and carrier plates 124 is not limited to the above number, and may be specifically designed according to the needs and actual conditions.

By the arrangement, the second slide device 1202 can stably bear a plurality of horizontally placed silicon wafers 200, and therefore the productivity is improved.

Fig. 7 is a schematic diagram of a relationship between a wafer carrier device and a silicon wafer 200 in a diffusion furnace according to an embodiment of the present application. As shown in fig. 7, when the silicon wafer 200 is placed on the carrier plate 124 of the slide device 120, two ends of the silicon wafer 200 along the extension direction of the furnace tube 110 may be aligned with two ends of the top plate 121, respectively. In other words, the dimension W1 of the silicon wafer 200 along the extension direction of the furnace tube 110 is equal to the dimension W2 of the top plate 121 along the extension direction of the furnace tube 110, and the end surfaces of the two ends of the silicon wafer 200 are respectively coplanar with the end surfaces of the two ends of the top plate 121. Of course, in other cases, the dimension W1 of the silicon wafer 200 along the extension direction of the furnace tube 110 is equal to the dimension W2 of the top plate 121 along the extension direction of the furnace tube 110, and the orthographic projection of the silicon wafer 200 along the vertical direction on the bottom plate and the orthographic projection of the top plate along the vertical direction on the bottom plate may partially overlap.

The dimensional relationship of the baffle 150 to the top plate 121 of the first slide 1201 may be referred to as the dimensional relationship of the silicon wafer 200 to the top plate 121 of the corresponding second slide 1202. Specifically, the dimension L of the baffle 150 along the extension direction of the furnace tube 110 is not greater than the dimension of the top plate 121 of the corresponding slide device 120 along the extension direction of the furnace tube 110, and the orthographic projection of the baffle 150 on the top plate 121 of the corresponding slide device 120 does not exceed two ends of the top plate 121 along the extension direction of the furnace tube 110. For example, the end surfaces of the both ends of the guide vane 150 may be coplanar with the end surfaces of the both ends of the corresponding top plate 121, respectively.

Therefore, the structural strength of the wafer carrier 120 is higher than the size of the baffle 150 and the silicon wafer 200 along the extension direction of the furnace tube 110, which is smaller than the size of the top plate 121 of the corresponding wafer carrier 120 along the extension direction of the furnace tube 110. Moreover, it is advantageous to ensure that one of the streams is able to flow horizontally between the wafer 200 and the baffle 150 and the corresponding top plate 121.

The orthographic projection of the bottom plate 122 on the horizontal plane may completely coincide with the orthographic projection of the top plate 121 on the horizontal plane, and the dimensional relationship between the bottom plate 122 and the guide vane 150 and the silicon wafer 200 is similar to the dimensional relationship between the top plate 121 and the guide vane 150 and the silicon wafer 200, which are not described herein. This advantageously ensures that one of the streams is able to flow horizontally between the wafer 200 and the baffle 150 and the corresponding bottom plate 122.

With continued reference to FIGS. 4 and 5, in some embodiments, the dimension L of the baffle 150 along the extension of the furnace tube 110 is less than the dimension W1 of the silicon wafer 200 along the extension of the furnace tube 110. It should be appreciated that this embodiment is implemented with the proviso that the baffle 150 is capable of directing the diffusion gas horizontally through each wafer 200. In this way, in the case that the dimensions of the silicon wafer 200 and the baffle 150 along the extension direction of the furnace tube 110 are equal to the dimensions of the top plate 121 of the corresponding slide device 120 along the extension direction of the furnace tube 110, the dimensions of the first slide device 1201 along the extension direction of the furnace tube 110 are smaller than the dimensions of the second slide device 1202 along the extension direction of the furnace tube 110.

By such design, on the basis that first slide device 1201 and flow guide 150 are capable of guiding diffusion gas to flow horizontally through each silicon wafer 200, the size of first slide device 1201 is smaller than the size of second slide device 1202, so that the space occupied by first slide device 1201 in furnace tube 110 is reduced.

Moreover, compared to the second slide device 1202, the first slide device 1201 can save manufacturing materials due to its small size, thereby facilitating the reduction of manufacturing costs of the second slide device 1202 and the baffle 150, and facilitating the solution of technical problems in a low cost manner.

As a further alternative embodiment of the present application, the dimension L of the baffle 150 along the extension direction of the furnace tube 110 may be 1/2 of the dimension W1 of the silicon wafer 200 along the extension direction of the furnace tube 110.

Thus, in the case where the dimensions of the silicon wafer 200 and the baffle 150 along the extension direction of the furnace tube 110 are equal to the dimensions of the top plate 121 of the corresponding slide device 120 along the extension direction of the furnace tube 110, the dimension of the first slide device 1201 along the extension direction of the furnace tube 110 is half of the dimension of the second slide device 1202 along the extension direction of the furnace tube 110, specifically, the dimension of the top plate 121 of the first slide device 1201 along the extension direction of the furnace tube 110 is half of the dimension of the top plate 121 of the second slide device 1202 along the extension direction of the furnace tube 110, and the dimension of the bottom plate 122 of the first slide device 1201 along the extension direction of the furnace tube 110 is half of the dimension of the bottom plate 122 of the second slide device 1202 along the extension direction of the furnace tube 110.

In this embodiment, through a great deal of experimental analysis, the inventors of the present application found that the uniformity of the flow field formed by the diffusion gas in the furnace tube 110 is high while the manufacturing costs of the second slide device 1202 and the guide vane 150 are effectively reduced.

Further, based on this embodiment, the number of the supporting members 123 of the second slide device 1202 may be two, and the number of the supporting members 123 of the first slide device 1201 may be one. In this way, the first slide device 1201 can be regarded as half of the second slide device 1202 on the premise of ensuring that the guide vane 150 can guide the diffusion gas to horizontally flow through each silicon wafer 200, so that the technical problem is solved in a low-cost manner without increasing the design cost. Of course, in the present embodiment, the number of the supporting members 123 of the second slide device 1202 is not limited to two, but may be more than three.

The thickness of the guide vane 150 may be the same as that of the silicon wafer 200, and the upper surface of each guide vane 150 is corresponding to and coplanar with the upper surface of the adjacent silicon wafer 200, so as to further ensure that the diffusion gas can flow horizontally along the surface of the silicon wafer 200 to the surface of the guide vane 150, and the guide effect is good.

In some examples of the present application, the baffle 150 may be a corrosion resistant baffle made of a corrosion resistant material. For example, the baffle 150 may be made of a corrosion resistant material such as mica, quartz, etc. In this way, the guide vane 150 can guide the diffusion gas to horizontally flow through the silicon wafer 200 carried by the second slide glass device 1202 near the flow channel outlet 112, and is beneficial to reducing the possibility of precipitating organic substances caused by chemical reaction between the guide vane 150 and the diffusion gas, so as to avoid the interference of the precipitated organic substances on other subsequent processes of the silicon wafer 200.

In some embodiments, the slide device 120 may be a symmetrical structure, with the slide device 120 being symmetrically disposed with respect to the plumb plane. For convenience of description, in fig. 6, directions of the X-axis, Y-axis, and Z-axis represent the width direction, the length direction, and the thickness direction of the top plate 121, respectively. The extension direction of the furnace tube 110 is parallel to the Y-axis direction. Here, the plumb plane is parallel to the XZ plane.

In an embodiment where the support 123 of the first slide device 1201 is provided with one, the top of the support 123 is connected to the center of the top plate 121 and the bottom of the support 123 is connected to the center of the bottom plate 122.

Through the arrangement, the gravity of the silicon wafer 200 or the guide vane 150 can uniformly act on the corresponding carrier plate 124, so that the silicon wafer 200 and the guide vane 150 can be ensured to be horizontally placed on the bearing surface 1241, and the slide device 120 can stably bear the silicon wafer 200 or the guide vane 150.

Fig. 8 is a schematic perspective view of a boat support 140 in a diffusion furnace 100 according to an embodiment of the present disclosure. Referring to fig. 8, the diffusion furnace 100 further includes a boat support 140 disposed in the furnace tube 110, wherein the boat support 140 is configured to stably support the first slide device 1201 and the second slide device 1202, so that the slide device 120 is stably located in the furnace tube 110.

According to fig. 8, the boat support 140 may specifically include two vertical plates 141, a first side plate 142 and a second side plate 143, where the extending directions of the first side plate 142 and the second side plate 143 are parallel to the extending direction of the furnace tube 110, the first side plate 142 and the second side plate 143 are spaced along the thickness direction of the first side plate and the second side plate 143, two ends of the first side plate 142 and the second side plate 143 are connected with the two vertical plates 141, the first side plate 142, the second side plate 143 and the two vertical plates 141 enclose a rectangular boat support together, and the slide device 120 is located in the rectangular boat support and is lapped on the first side plate 142 and the second side plate 143.

In order to improve the structural strength of the boat support 140, the boat support 140 may further be provided with a reinforcing rib 144, the reinforcing rib 144 is located between the first side plate 142 and the second side plate 143, one end of the reinforcing rib 144 is connected to the first side plate 142, and the other end of the reinforcing rib 144 is connected to the second side plate 143. The number of the reinforcing ribs 144 is not limited to two as shown in fig. 8, but may be one or three or more.

The first side plate 142 is further provided with a plurality of through holes 145, and the plurality of through holes 145 are sequentially arranged along the extending direction of the furnace tube 110 to reduce the dead weight of the boat support 140. Similarly, the second side plate 143 may also have a plurality of through holes 145.

In addition, in some embodiments, as shown in fig. 4, a flow channel inlet 111 and a through hole are provided at one end of the furnace tube 110, the diffusion furnace 100 further includes an exhaust tube 130, and one end of the exhaust tube 130 is inserted into the furnace tube 110 through the through hole and extends into a side of the slide device 120 carrying the guide vane 150 away from the flow channel inlet 111. At this time, the diffusion gas flows horizontally from the surface of the silicon wafer 200 of the second slide holder 1202 adjacent to the first slide holder 1201, flows into the gap on the first slide holder 1201, is sucked to the flow path outlet 112 by the suction pipe 130, and is then discharged to the outside of the furnace tube 110 through the suction pipe 130. In this embodiment, the flow channel outlet 112 is located on a side of the first slide device 1201 away from the flow channel inlet 111 to facilitate ensuring that the diffusion gas can flow horizontally through each of the silicon wafers 200.

It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present utility model, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the utility model, and are also considered to be within the scope of the utility model.

Claims (10)

1. A diffusion furnace, comprising:

the device comprises a furnace tube, wherein a diffusion flow channel for flowing diffusion gas is formed in the furnace tube, the diffusion flow channel is provided with a flow channel inlet and a flow channel outlet, and the flow channel inlet and the flow channel outlet are respectively close to two ends of the furnace tube along the extending direction of the furnace tube;

the slide glass device comprises a furnace tube, a plurality of slide glass devices, a plurality of guide plates, a plurality of diffusion flow channels and a diffusion flow channel, wherein the slide glass devices are arranged in the furnace tube and sequentially arranged along the extension direction of the furnace tube, a plurality of bearing surfaces which are arranged at intervals along the vertical direction are formed on each slide glass device, the bearing surfaces are parallel to a horizontal plane, the bearing surfaces on each slide glass device are in one-to-one correspondence with the bearing surfaces of the adjacent slide glass devices and are arranged in a coplanar manner, the bearing surfaces of one slide glass device which is arranged close to the flow channel outlet are provided with the guide plates, and the bearing surfaces of the rest slide glass devices are used for placing silicon wafers so that diffusion gas flowing along the diffusion flow channels sequentially flows from the surfaces of the silicon wafers borne by the slide glass devices along the horizontal direction.

2. The diffusion furnace of claim 1, wherein the slide device comprises a top plate, a bottom plate and a supporting member, the top plate and the bottom plate are arranged opposite to each other along a vertical direction, the supporting member extends along the vertical direction, one end of the supporting member is connected with the top plate, the other end of the supporting member is connected with the bottom plate, a plurality of carrier plates are mounted on the supporting member and are arranged at intervals along the vertical direction, and one surface of the carrier plate facing the top plate is the bearing surface.

3. The diffusion furnace of claim 2 wherein the size of the baffle along the extension of the furnace tube is less than the size of the silicon wafer along the extension of the furnace tube.

4. A diffusion furnace according to claim 3, wherein the dimension of the deflector along the extension direction of the furnace tube is 1/2 of the dimension of the silicon wafer along the extension direction of the furnace tube.

5. The diffusion furnace of claim 3 wherein the dimension of the baffle along the extension of the furnace tube is no greater than the dimension of the roof of the corresponding slide device along the extension of the furnace tube, and the orthographic projection of the baffle on the roof of the corresponding slide device does not exceed the two ends of the roof along the extension of the furnace tube.

6. The diffusion furnace of claim 5, wherein one of the slide devices disposed adjacent to the outlet of the flow channel is provided with one of the support members, and the remaining slide devices are provided with a plurality of the support members, the plurality of support members being disposed in sequence along the extension direction of the furnace tube.

7. The diffusion furnace of any one of claims 1 to 6, wherein the slide mount is of symmetrical construction, the slide mount being symmetrically disposed with respect to a plumb plane.

8. A diffusion furnace according to any one of claims 1 to 6, wherein the deflector is a corrosion resistant deflector made of a corrosion resistant material.

9. The diffusion furnace of any one of claims 1 to 6 wherein one end of the furnace tube is provided with a flow channel inlet and a through hole, the diffusion furnace further comprising an exhaust tube, one end of the exhaust tube being threaded into the furnace tube through the through hole and extending into a side of the slide device carrying the guide vane remote from the flow channel inlet.

10. The diffusion furnace of any one of claims 1 to 6, further comprising a boat support disposed within the furnace tube, the boat support for receiving the slide mount.