CN220233114U - Semiconductor process chamber and semiconductor process equipment - Google Patents
Semiconductor process chamber and semiconductor process equipment Download PDFInfo
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- CN220233114U CN220233114U CN202321654620.8U CN202321654620U CN220233114U CN 220233114 U CN220233114 U CN 220233114U CN 202321654620 U CN202321654620 U CN 202321654620U CN 220233114 U CN220233114 U CN 220233114U
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000008569 process Effects 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000010926 purge Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 9
- 238000013459 approach Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 description 50
- 239000007789 gas Substances 0.000 description 28
- 239000011261 inert gas Substances 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- 238000000605 extraction Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The application discloses a semiconductor process chamber and semiconductor process equipment, and belongs to the technical field of semiconductor processing. The disclosed semiconductor process chamber comprises a chamber body, a base, an upper baffle ring and a lower baffle ring, wherein the base, the upper baffle ring and the lower baffle ring are arranged in the chamber body, and the lower baffle ring is arranged around the base so that a first airflow channel is formed between the lower baffle ring and the base; the upper baffle ring is arranged above the lower baffle ring, one of the upper baffle ring and the lower baffle ring is provided with a positioning bulge, the other one is provided with an annular positioning groove, and the annular positioning groove is arranged along the annular direction of the upper baffle ring or along the annular direction of the lower baffle ring; in the process that the lower baffle ring is close to the upper baffle ring, the positioning protrusion can be positioned in the annular positioning groove and matched with the annular positioning groove in a positioning way. The technical scheme can solve the problem that the upper baffle ring and the lower baffle ring are difficult to position and match in the semiconductor process chamber related to the related technology.
Description
Technical Field
The application belongs to the technical field of semiconductor processing, and particularly relates to a semiconductor process chamber and semiconductor process equipment.
Background
The tungsten plug process is widely applied in the semiconductor processing process, and can fill metal tungsten into holes or grooves on the surface of a wafer, namely into connecting holes on the surface of the wafer, specifically, tungsten deposition is usually carried out on the wafer by adopting a covering chemical vapor reaction, at the moment, the metal tungsten is deposited on the surface of the wafer and into the connecting holes on the surface of the wafer, and finally, the tungsten on the surface of the wafer is removed by chemical mechanical polishing so as to only leave the tungsten in the connecting holes, and the tungsten in the connecting holes can realize reliable electrical conduction process requirements among all components, namely, the process utilizes the good conductivity and electromigration resistance of the metal tungsten.
In particular, when chemical mechanical polishing is performed, since the wafer edge has a chamfer, in order to prevent tungsten on the wafer edge from being removed cleanly and affecting the subsequent process, tungsten is required to be deposited on the wafer within a certain range, and therefore inert gas is required to be blown toward the wafer edge in the process, and the flow direction of the inert gas is generally controlled by the upper baffle ring, the lower baffle ring and the base in the semiconductor process chamber in a matched manner, so that the purpose that tungsten cannot be deposited on the wafer edge is achieved.
However, because the upper baffle ring and the lower baffle ring generally realize positioning fit through the positioning pins and the positioning holes, when the upper baffle ring rotates in the process chamber, the problem that the upper baffle ring and the lower baffle ring are difficult to position fit can occur, namely the situation that the positioning pins do not fall into the positioning holes can easily occur, and at the moment, if the base drives the upper baffle ring and the lower baffle ring to rise, the upper baffle ring is easy to collide with other parts in the process chamber, so that the upper baffle ring is damaged.
In summary, the semiconductor process chamber related to the related art has the problem that the upper baffle ring and the lower baffle ring are not easy to be positioned and matched.
Disclosure of Invention
The application discloses a semiconductor process chamber and semiconductor process equipment, which are used for solving the problem that the semiconductor process chamber related to the related technology is difficult to position and match between an upper baffle ring and a lower baffle ring.
In order to solve the technical problems, the application adopts the following technical scheme:
a semiconductor process chamber comprises a chamber body, a base, an upper baffle ring and a lower baffle ring,
the base, the upper baffle ring and the lower baffle ring are all arranged in the chamber body, and the lower baffle ring is arranged around the base so that a first air flow channel is formed between the lower baffle ring and the base;
the upper baffle ring is arranged above the lower baffle ring, one of the upper baffle ring and the lower baffle ring is provided with a positioning protrusion, the other one of the upper baffle ring and the lower baffle ring is provided with an annular positioning groove, and the annular positioning groove is arranged along the annular direction of the upper baffle ring or the annular direction of the lower baffle ring;
in the process that the lower baffle ring is close to the upper baffle ring, the positioning protrusion can be positioned in the annular positioning groove and matched with the annular positioning groove in a positioning way.
A semiconductor process apparatus comprising a gas purge line in communication with the first gas flow channel to provide a purge gas to the first gas flow channel, and a semiconductor process chamber as described above.
The technical scheme that this application adopted can reach following beneficial effect:
in this application, the in-process that keeps off the ring and be close to the upper baffle ring under the lower baffle ring that keeps off the ring under the base drive, because one of the baffle ring is equipped with the location arch under with, the annular constant head tank has been seted up to another, and the annular constant head tank sets up along the hoop of upper baffle ring or along the hoop of lower baffle ring, the annular constant head tank is the constant head tank of a whole circle promptly, therefore, the location cooperation of location arch and annular constant head tank is comparatively nimble, can know from this, even go up the baffle ring and take place to rotate in the cavity is this, the location arch also can get into the annular constant head tank comparatively easily, and with annular constant head tank location cooperation. Therefore, the semiconductor process chamber disclosed by the application can solve the problem that the semiconductor process chamber related to the related technology is difficult to position and match between the upper baffle ring and the lower baffle ring.
Drawings
FIG. 1 is a schematic view of a semiconductor process chamber in partial cross-section, as disclosed in an embodiment of the present application;
FIG. 2 is a schematic structural view of an upper baffle ring disclosed in an embodiment of the present application;
FIG. 3 is a schematic view of a portion of the structure of an upper baffle ring according to an embodiment of the present disclosure;
FIG. 4 is a schematic cross-sectional view of an upper baffle ring disclosed in an embodiment of the present application;
FIG. 5 is a schematic view of the structure of the lower baffle ring disclosed in the embodiment of the present application;
FIG. 6 is a schematic view of a portion of the structure of a lower stop ring disclosed in an embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a lower stop ring disclosed in an embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of the upper and lower stop rings mated in accordance with an embodiment of the present application;
fig. 9 is a schematic view of a part of the structure of a first air extraction grid disclosed in an embodiment of the application.
Reference numerals illustrate:
100-chamber body, 110-fifth air pumping hole;
200-a base, 210-a first airflow channel, 220-a second airflow channel, 230-a third airflow channel;
300-upper baffle ring, 310-positioning protrusion, 311-first face, 312-second face, 320-guide part;
400-lower baffle rings, 410-annular positioning slots, 411-notch, 412-side surfaces, 413-bottom surfaces and 414-transitional cambered surfaces;
510-a first pumping grid, 511-a guide groove, 512-a first pumping hole, 513-a second pumping hole, 520-a pumping grid cover, 530-a second pumping grid, 531-a third pumping hole, 532-a fourth pumping hole, 533-a top and 540-an upper cover;
600-wafer.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The semiconductor process chamber disclosed in the embodiments of the present application is described in detail below with reference to the accompanying drawings by means of specific embodiments and application scenarios thereof.
Referring to fig. 1-9, a semiconductor process chamber is disclosed, the disclosed semiconductor process chamber includes a chamber body 100, a susceptor 200, an upper baffle ring 300, and a lower baffle ring 400.
The chamber body 100 is a chamber for processing the wafer 600, the base 200 is a base of the arrangement of the wafer 600 in the chamber body 100, and the upper baffle ring 300 and the lower baffle ring 400 are used for forming an air flow channel with the base 200 so as to blow inert gas to the edge of the wafer 600 through the air flow channel, thereby realizing the technical requirement of uniform tungsten-free film deposition at the chamfer of the edge of the wafer 600, namely realizing the technical requirement of edge pressing. Alternatively, the upper and lower barrier rings 300 and 400 may be made of ceramic.
Specifically, the base 200, the upper baffle ring 300 and the lower baffle ring 400 are all disposed in the chamber body 100, and the lower baffle ring 400 is disposed around the base 200, so that a first air flow channel 210 is formed between the lower baffle ring 400 and the base 200, that is, the lower baffle ring 400 is always disposed on the base 200, a second air flow channel 220 communicating with a gas transmission device in an external environment is disposed on the base 200, and the first air flow channel 210 is communicated with the second air flow channel 220. The second air flow channel 220 is generally connected to a gas delivery device in the external environment through the bottom of the base 200, which is not limited herein.
In practice, the surface of the lower baffle ring 400 facing the upper baffle ring 300 is higher than the surface of the wafer 600 on the susceptor 200. Thus, when the susceptor 200 drives the lower baffle ring 400 to rise in the chamber body 100, since the upper baffle ring 300 is disposed above the lower baffle ring 400, the lower baffle ring 400 gradually approaches the upper baffle ring 300 and finally drives the upper baffle ring 300 to rise in the chamber body 100, at this time, a gap is formed between the upper baffle ring 300 and the wafer 600 on the susceptor 200, so that a third air flow channel 230 is formed between the upper baffle ring 300 and the susceptor 200, the third air flow channel 230 is in communication with the first air flow channel 210, and when the gas transmission device in the external environment transmits the inert gas to the second air flow channel 220, the inert gas sequentially passes through the second air flow channel 220, the first air flow channel 210 and the third air flow channel 230 and finally blows to the edge of the wafer 600.
Alternatively, the first airflow channel 210 is an annular airflow channel, and the first airflow channel 210 is disposed obliquely, that is, the air outlet direction of the first airflow channel 210 near the side of the upper baffle ring 300 is inclined toward the side near the base 200 relative to the vertical direction, and the third airflow channel 230 is a horizontal airflow channel, so that the purpose of blowing the inert gas toward the edge of the wafer 600 can be achieved by this arrangement.
In order to stably drive the upper baffle ring 300 to move, that is, to form a relatively stable air flow channel between the upper baffle ring 300, the lower baffle ring 400 and the base 200, one of the upper baffle ring 300 and the lower baffle ring 400 is provided with a positioning protrusion 310, the other one is provided with an annular positioning groove 410, and the annular positioning groove 410 is arranged along the annular direction of the upper baffle ring 300 or along the annular direction of the lower baffle ring 400, that is, each place of the upper baffle ring 300 or the lower baffle ring 400 in the circumferential direction is provided with an annular positioning groove 410, and in the process of the lower baffle ring 400 approaching the upper baffle ring 300, that is, in the process of the base 200 driving the lower baffle ring 400 and the wafer 600 to rise to the process position in the chamber body 100, the positioning protrusion 310 can be positioned in the annular positioning groove 410, that is, the positioning protrusion 310 can gradually enter the annular positioning groove 410 and finally be in positioning fit with the annular positioning groove 410, so that the lower baffle ring 400 can stably drive the upper baffle ring 300 to move in the chamber body 100.
Meanwhile, since the annular positioning groove 410 is disposed along the circumferential direction of the upper baffle ring 300 or along the circumferential direction of the lower baffle ring 400, the positioning protrusion 310 can enter the annular positioning groove 410 at any position and be matched with the annular positioning groove 410 in a positioning manner, that is, in the process that the lower baffle ring 400 approaches the upper baffle ring 300, the positioning protrusion 310 can be positioned in the circumferential direction of the upper baffle ring 300 or the lower baffle ring 400, so that the positioning is flexible, and the positioning protrusion 310 can be matched with the annular positioning groove 410 easily, that is, the positioning matching accuracy is high.
In this application, in the process that the lower baffle ring 400 approaches the upper baffle ring 300, that is, in the process that the base 200 drives the lower baffle ring 400 to approach the upper baffle ring 300, since one of the upper baffle ring 300 and the lower baffle ring 400 is provided with the positioning protrusion 310, the other one is provided with the annular positioning groove 410, and the annular positioning groove 410 is arranged along the annular direction of the upper baffle ring 300 or the annular direction of the lower baffle ring 400, that is, the annular positioning groove 410 is a positioning groove of a whole circle, therefore, the positioning protrusion 310 and the positioning matching of the annular positioning groove 410 are more flexible, and therefore, even if the upper baffle ring 300 rotates in the chamber body 100, the positioning protrusion 310 can also easily enter the annular positioning groove 410 and be in positioning matching with the annular positioning groove 410. Therefore, the semiconductor process chamber disclosed in the present application can solve the problem that the semiconductor process chamber related to the related art has difficulty in positioning and matching between the upper baffle ring 300 and the lower baffle ring 400.
Meanwhile, because the upper baffle ring 300 and the lower baffle ring 400 are easily positioned and matched, in the process that the base 200 drives the upper baffle ring 300 and the lower baffle ring 400 to ascend, the upper baffle ring 300 is not easy to collide with the air extraction grid cover 520 described later, and the upper baffle ring 300 is not easy to crack.
Alternatively, the positioning protrusion 310 may be a positioning post or a positioning rod, which is positioned in the annular positioning groove 410 and is in positioning engagement with the annular positioning groove 410 during the process of approaching the lower stop ring 400 to the upper stop ring 300.
In another embodiment, due to the heating of the susceptor 200, the upper baffle ring 300 and the lower baffle ring 400 may be deformed by heat, so that a gap is easily formed between the upper baffle ring 300 and the lower baffle ring 400, and at this time, part of the inert gas blown to the edge of the wafer 600 may enter the chamber body 100 through the gap, that is, a gas leakage phenomenon is generated, and the amount of the inert gas blown to the edge of the wafer 600 may be reduced, which easily causes uneven distribution of the inert gas at the edge of the wafer 600, and thus may cause a problem of depositing a tungsten film at the edge of the wafer 600.
In order to avoid the above problems, the positioning protrusion 310 is an annular positioning boss, and the annular positioning boss is disposed along the circumferential direction of the upper baffle ring 300 or along the circumferential direction of the lower baffle ring 400, that is, the positioning protrusion 310 is disposed in the circumferential direction of the upper baffle ring 300 or the lower baffle ring 400, so that the positions of the annular positioning groove 410 are aligned and matched with the positions of the annular positioning boss, and the annular positioning boss is in sealing and matching with the annular positioning groove 410, and then the upper baffle ring 300 is in sealing and matching with the lower baffle ring 400, and even if the upper baffle ring 300 and the lower baffle ring 400 are deformed by heat, gaps are not easy to occur between the upper baffle ring 300 and the lower baffle ring 400 due to the sealing and matching of the annular positioning boss and the annular positioning groove 410, that is, no air leakage phenomenon occurs.
In this embodiment, since the annular positioning boss is in sealing engagement with the annular positioning groove 410, that is, the upper baffle ring 300 is tightly engaged with the lower baffle ring 400 everywhere, the requirements of the flatness and parallelism of the upper baffle ring 300 and the lower baffle ring 400 are low.
Alternatively, the upper retainer ring 300 may be provided with an annular positioning groove 410, and the lower retainer ring 400 may be provided with a positioning protrusion 310.
In another embodiment, since the thickness of the lower baffle ring 400 is generally thicker and the thickness of the upper baffle ring 300 is generally thinner, it is not easy to form the annular positioning groove 410 on the upper baffle ring 300 to meet the process requirement, and therefore, referring to fig. 2-7, the present application may provide the positioning protrusion 310 on the upper baffle ring 300 and the annular positioning groove 410 on the lower baffle ring 400 to meet the process requirement. Alternatively, the upper stopper ring 300 is provided with the positioning protrusion 310, and the cross-sectional shape of the structure formed by the upper stopper ring 300 and the positioning protrusion 310 is substantially T-shaped.
Alternatively, the thickness of the upper baffle ring 300 is generally less than 4mm, the thickness of the lower baffle ring 400 is generally 14mm, and the depth of the annular positioning groove 410 is generally greater than 3mm to ensure the mating tightness of the positioning protrusion 310 and the annular positioning groove 410, i.e., to ensure the mating tightness of the upper baffle ring 300 and the lower baffle ring 400.
Alternatively, the positioning protrusion 310 has a first face 311 connected to the upper or lower stopper ring 300 or 400, and a second face 312 distant from the first face 311, the first face 311 and the second face 312 being opposite in the vertical direction, i.e., the first face 311 is for connection to the upper or lower stopper ring 300 or 400 provided with the positioning protrusion 310, the second face 312 is for sealing engagement with the upper or lower stopper ring 300 or 400 provided with the annular positioning groove 410, and the cross-sectional areas of the positioning protrusion 310 may be equal throughout in the direction in which the first face 311 extends toward the second face 312.
In another embodiment, the cross-sectional area of the positioning protrusion 310 gradually decreases in the direction in which the first surface 311 extends toward the second surface 312, that is, the cross-sectional area of the second surface 312 for sealing engagement with the annular positioning groove 410 is smaller than that of the first surface 311, and the positioning protrusion 310 is also more easily engaged with the annular positioning groove 410 while the positioning protrusion 310 is more easily engaged with the annular positioning groove 410 because the second surface 312 is first engaged with the annular positioning groove 410 during the positioning engagement of the upper and lower retainer rings 300 and 400 and the first surface 311 is first engaged with the annular positioning groove 410, that is, the smaller cross-sectional area of the positioning protrusion 310 is first engaged with the annular positioning groove 410.
Correspondingly, in this embodiment, when the susceptor 200 descends within the chamber body 100, the lower baffle ring 400 gradually moves away from the upper baffle ring 300, and at this time, the positioning protrusion 310 is also more easily separated from the annular positioning groove 410, i.e., the positioning protrusion 310 is more easily disengaged from the positioning groove 410, so that the lower baffle ring 400 is more easily separated from the upper baffle ring 300.
Alternatively, the annular positioning groove 410 has a notch 411, and the positioning protrusion 310 may enter the annular positioning groove 410 through the notch 411 and be in positioning engagement with the annular positioning groove 410, where the width of the notch 411 may be equal to the width of the positioning protrusion 310 at the first face 311, i.e. at this time, the structure of the positioning protrusion 310 at the first face 311 may just enter the annular positioning groove 410.
In another embodiment, since the heat is transferred to the upper baffle ring 300 and the lower baffle ring 400 by heating the base 200, this easily causes the upper baffle ring 300 and the lower baffle ring 400 to be deformed by heat, and thus the notch 411 is easily deformed by heat, at this time, in order to prevent the positioning protrusion 310 from being easily blocked in the annular positioning groove 410 due to the deformation of the annular positioning groove 410, and thus the upper baffle ring 300 and the lower baffle ring 400 cannot be separated from each other, the width of the notch 411 can be always larger than the width of the positioning protrusion 310 at the first surface 311, at this time, even if the notch 411 is deformed by heat, the risk that the positioning protrusion 310 is blocked by the annular positioning groove 410 is also small, i.e. the upper baffle ring 300 and the lower baffle ring 400 are more easily separated from each other.
Alternatively, in the arrangement direction of the upper and lower stopper rings 300 and 400, i.e., in the vertical direction, the positioning protrusion 310 has a certain height, the annular positioning groove 410 has a certain depth, and the height of the positioning protrusion 310 may be greater than the depth of the annular positioning groove 410, i.e., at this time, in the case where the positioning protrusion 310 and the annular positioning groove 410 are in positioning engagement, a portion of the positioning protrusion 310 is located outside the annular positioning groove 410.
In another embodiment, the height of the positioning protrusion 310 is smaller than or equal to the depth of the annular positioning groove 410, that is, the depth of the annular positioning groove 410 is larger, and all of the positioning protrusion 310 can be located in the annular positioning groove 410, so that the upper baffle ring 300 and the lower baffle ring 400 form a planar fit while the positioning protrusion 310 and the annular positioning groove 410 are in sealing fit, and further sealing fit is realized, and at this time, inert gas is less likely to pass between the upper baffle ring 300 and the lower baffle ring 400, that is, leakage is less likely to occur.
Further, in this embodiment, since the entirety of the positioning protrusion 310 may be located in the annular positioning groove 410, the space of the chamber body 100 occupied by the upper and lower barrier rings 300 and 400 as a whole is small.
Alternatively, annular positioning groove 410 has side surface 412 and bottom surface 413, i.e., side surface 412 is a groove side wall of annular positioning groove 410, bottom surface 413 is a groove bottom wall of annular positioning groove 410, and side surface 412 and bottom surface 413 are vertically connected, i.e., side surface 412 and bottom surface 413 are mutually perpendicular.
Optionally, a transition arc surface 414 is provided at the connection between the side surface 412 and the bottom surface 413, that is, when the side surface 412 and the bottom surface 413 are vertically connected, the side surface 412 and the bottom surface 413 are transited through the arc surface, that is, the transition arc surface 414 is an arc surface, and at this time, an operator can clean the whole parts of the annular positioning groove 410 more easily, that is, the annular positioning groove 410 has no cleaning dead angle. Of course, the transition cambered surface 414 may not be provided, and the side surface 412 and the bottom surface 413 may be directly connected.
Alternatively, the positioning projections 310 may be positioning posts, and the number of positioning projections 310 may be one.
In another embodiment, to improve the positioning stability of the upper and lower stop rings 300 and 400, the number of the positioning protrusions 310 is at least two, i.e. the number of the positioning posts is at least two, and the at least two positioning protrusions 310 are arranged at intervals along the circumferential direction of the upper or lower stop rings 300 and 400, at this time, the at least two positioning protrusions 310 may be in positioning fit with the annular positioning grooves 410, so as to improve the positioning stability of the upper and lower stop rings 300 and 400.
Optionally, the semiconductor process chamber may further include a first air extraction grid 510, where the first air extraction grid 510 is disposed on an inner wall of the chamber body 100, the first air extraction grid 510 is provided with a guide groove 511, the upper baffle ring 300 is provided with a guide portion 320 protruding toward the inner wall, the guide portion 320 is slidably disposed in the guide groove 511, that is, when the base 200 drives the upper baffle ring 300 to move in the chamber body 100, the first air extraction grid 510 may play a certain guiding role, and meanwhile, in a circumferential direction of the upper baffle ring 300, the guide portion 320 is in limit fit with the guide groove 511, that is, the first air extraction grid 510 may limit a position of the upper baffle ring 300 in the chamber body 100, so that the upper baffle ring 300 is set more stably in the chamber body 100.
Alternatively, the number of the guide grooves 511 may be at least two, the at least two guide grooves 511 are uniformly and alternately arranged in the circumferential direction of the first pumping grid 510, and correspondingly, the number of the guide parts 320 may be at least two, the at least two guide parts 320 are uniformly and alternately arranged in the circumferential direction of the upper baffle ring 300, and each guide part 320 corresponds to each guide groove 511 one by one.
Optionally, referring to fig. 9, the first pumping grid 510 is provided with a groove, a side wall of the groove is provided with a first pumping hole 512, a bottom wall of the groove is provided with a second pumping hole 513, the first pumping hole 512 is communicated with the second pumping hole 513 through the groove, the first pumping hole 512 is communicated with the inner cavity of the chamber body 100, the chamber body 100 is provided with a fifth pumping hole 110, the second pumping hole 513 is communicated with the fifth pumping hole 110, and by this arrangement, the redundant inert gas and other reaction gases in the chamber body 100 can be sequentially discharged to the external environment through the first pumping hole 512, the second pumping hole 513 and the fifth pumping hole 110.
Alternatively, the number of the first air extraction grids 510 and the second air extraction holes 513 may be at least two, the plurality of first air extraction grids 510 are uniformly and alternately arranged in the circumferential direction of the side wall of the groove, and the plurality of second air extraction holes 513 are uniformly and alternately arranged in the circumferential direction of the bottom wall of the groove, so as to improve the air extraction efficiency.
Optionally, the semiconductor process chamber may further include a pumping gate cover 520, where the pumping gate cover 520 seals the notch of the groove on the first pumping gate 510, so that the redundant inert gas and other reaction gases in the chamber body 100 can flow to the second pumping hole 513 through the first pumping hole 512 and be further exhausted to the external environment.
In order to enable the gas in the chamber body 100 to be more uniformly exhausted, the semiconductor process chamber may further include a second pumping grid 530, the second pumping grid 530 is disposed on the inner wall of the chamber body 100, and the pumping grid cover 520, the first pumping grid 510 and the second pumping grid 530 are sequentially arranged in the chamber body 100, the second pumping grid 530 is provided with a third pumping hole 531 and a fourth pumping hole 532 which are communicated with each other, the third pumping hole 531 is communicated with the inner cavity of the chamber body 100, and the fourth pumping hole 532 is opposite to and communicated with the second pumping hole 513, so that the fourth pumping hole 532 is communicated with the fifth pumping hole 110. Accordingly, the first pumping grid 510 and the second pumping grid 530 can together collect the redundant inert gas and other reaction gases in the chamber body 100 to the fifth pumping hole 110, and exhaust the inert gas from the fifth pumping hole 110 to the external environment, i.e. the first pumping grid 510 and the second pumping grid 530 can exhaust the gas in the chamber body 100 more uniformly.
Optionally, the second pumping grid 530 has a top 533 through which the first pumping grid 510 and the second pumping grid 530 are connected, and the second pumping grid 530 has an inner diameter smaller than that of the first pumping grid 510, and the upper baffle ring 300 moves in the guide groove 511 during the descent of the lower baffle ring 400 and the upper baffle ring 300 in the chamber body 100 driven by the susceptor 200 until the upper baffle ring 300 stops moving after the edge of the upper baffle ring 300 contacts the top 533, i.e., the top 533 can limit the upper baffle ring 300 from continuing to descend, whereby it is known that the upper baffle ring 300 can be separated from the lower baffle ring 400 by the top 533.
Optionally, the semiconductor process chamber may further include an upper cover 540, where the upper cover 540 is disposed on a top wall of the chamber body 100, and the inner space of the chamber body 100 may be sealed by the upper cover 540.
Optionally, the present application further discloses a semiconductor process apparatus, including a gas purge line and the semiconductor process chamber described above, where the gas purge line is in communication with the first gas flow channel 210, and the gas purge line is configured to provide a purge gas to the first gas flow channel 210, where the purge gas is configured to purge an edge of the wafer 600, and may be an inert gas in particular. The flow of inert gas in the first gas flow channel 210 may be increased by the gas purge line, thereby ensuring that the edge of the wafer 600 cannot deposit a tungsten layer. Alternatively, the gas delivery device described above may be a gas source, with which the gas purge line communicates, i.e., the gas delivery device provides inert gas for purging to the first gas flow channel 210 via the gas purge line.
In particular implementations, the semiconductor processing apparatus may be a chemical vapor deposition (Chemical Vapor Deposition, CVD) apparatus.
In the embodiments described above, the differences between the embodiments are mainly described, and as long as there is no contradiction between the different optimization features between the embodiments, the different optimization features may be combined to form a better embodiment, and in consideration of brevity of line text, the description is omitted here.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and changes may be made to the present application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. which are within the spirit and principles of the present application are intended to be included within the scope of the claims of the present application.
Claims (10)
1. A semiconductor process chamber is characterized by comprising a chamber body (100), a base (200), an upper baffle ring (300) and a lower baffle ring (400),
the base (200), the upper baffle ring (300) and the lower baffle ring (400) are all arranged in the chamber body (100), and the lower baffle ring (400) is arranged around the base (200) so that a first air flow channel (210) is formed between the lower baffle ring (400) and the base (200);
the upper baffle ring (300) is arranged above the lower baffle ring (400), one of the upper baffle ring (300) and the lower baffle ring (400) is provided with a positioning protrusion (310), the other one is provided with an annular positioning groove (410), and the annular positioning groove (410) is arranged along the annular direction of the upper baffle ring (300) or the annular direction of the lower baffle ring (400);
the positioning protrusion (310) may be positioned in the annular positioning groove (410) and be in positioning fit with the annular positioning groove (410) in a process that the lower baffle ring (400) approaches the upper baffle ring (300).
2. The semiconductor process chamber of claim 1, wherein the positioning boss (310) is an annular positioning boss disposed along a circumferential direction of the upper baffle ring (300) or along a circumferential direction of the lower baffle ring (400) such that the annular positioning boss is in sealing engagement with the annular positioning groove (410).
3. The semiconductor process chamber of claim 1, wherein the upper baffle ring (300) is provided with the positioning protrusion (310), and the lower baffle ring (400) is provided with the annular positioning groove (410).
4. The semiconductor process chamber according to claim 1, wherein the positioning protrusion (310) has a first face (311) connected to the upper baffle ring (300) or the lower baffle ring (400), and a second face (312) distant from the first face (311), the first face (311) and the second face (312) being opposite in a vertical direction, and a cross-sectional area of the positioning protrusion (310) gradually decreases in a direction in which the first face (311) extends toward the second face (312).
5. The semiconductor process chamber of claim 4, wherein the annular detent (410) has a slot (411), the detent projection (310) is accessible through the slot (411) into the annular detent (410), and a width of the slot (411) is greater than a width of the detent projection (310) at the first face (311).
6. The semiconductor process chamber of claim 1, wherein the height of the positioning protrusion (310) is less than or equal to the depth of the annular positioning groove (410).
7. The semiconductor process chamber of claim 1, wherein the annular positioning groove (410) has a side surface (412) and a bottom surface (413), the side surface (412) and the bottom surface (413) being vertically connected.
8. The semiconductor process chamber according to claim 7, wherein a junction of the side surface (412) and the bottom surface (413) is provided with a transition arc surface (414).
9. The semiconductor process chamber according to claim 1, wherein the positioning protrusions (310) are positioning posts, the number of the positioning protrusions (310) is at least two, and the at least two positioning protrusions (310) are arranged at intervals along the circumferential direction of the upper baffle ring (300) or the lower baffle ring (400).
10. A semiconductor process apparatus comprising a gas purge line in communication with the first gas flow channel (210) to provide a purge gas to the first gas flow channel (210) and the semiconductor process chamber of any one of claims 1-9.
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| CN202321654620.8U CN220233114U (en) | 2023-06-27 | 2023-06-27 | Semiconductor process chamber and semiconductor process equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117877958A (en) * | 2024-03-12 | 2024-04-12 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117877958A (en) * | 2024-03-12 | 2024-04-12 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
| CN117877958B (en) * | 2024-03-12 | 2024-05-07 | 上海谙邦半导体设备有限公司 | Semiconductor processing equipment |
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