KR20170055794A - Arc chamber for ion implanter - Google Patents

Arc chamber for ion implanter Download PDF

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Publication number
KR20170055794A
KR20170055794A KR1020150159017A KR20150159017A KR20170055794A KR 20170055794 A KR20170055794 A KR 20170055794A KR 1020150159017 A KR1020150159017 A KR 1020150159017A KR 20150159017 A KR20150159017 A KR 20150159017A KR 20170055794 A KR20170055794 A KR 20170055794A
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South Korea
Prior art keywords
arc chamber
curved surface
resistant metal
curved
filling member
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KR1020150159017A
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Korean (ko)
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KR101769844B1 (en
Inventor
황규태
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주식회사 밸류엔지니어링
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Priority to KR1020150159017A priority Critical patent/KR101769844B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

The present invention relates to an arc chamber for an ion implanter, which forms a plasma therein to generate an ion required in an ion implantation process. The arc chamber comprises: a heat-resistant metal body having an opened upper part and a predetermined space formed therein; a curved surface filling member mounted on an inner space of the heat-resistant metal body and including a curved surface; and a liner having the same shape as the surface of the curved surface filling member and preventing the curved surface filling member from being exposed to the plasma.

Description

[0001] The present invention relates to an arc chamber for ion implanter,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an arc chamber for an ion implanter, and more particularly, to an arc chamber for an ion implanter, which is an apparatus for generating ions to be injected into a semiconductor wafer in an ion implanter by forming a plasma therein.

2. Description of the Related Art [0002] Semiconductor device manufacturing processes include a deposition process, a photolithography process, an etching process, and an ion implantation process. In the deposition process, sputtering, chemical vapor deposition, or the like is used as a process of forming a conductive film or an insulating film of a semiconductor device, and the photo process is a process of patting a photosensitive resin with a photomask having a predetermined pattern as a previous stage of the etching process , And the etching process is a process of patterning the underlying conductive film or insulating film using the photosensitive resin pattern.

The ion implantation process is a process for controlling the operation characteristics of an electronic device formed on a silicon wafer. In the past, a process of doping impurities into the inside of the film using thermal diffusion has been used. However, recently, Ion implantation method in which impurity ions are doped into a semiconductor substrate are mainly used.

The impurity doping process using the ion implantation method has an advantage that it is easier to control the concentration of the impurity than the thermal diffusion process, and is advantageous in adjusting or limiting the depth to be doped. In the ion implantation method, an ion implanter is used. The ion implanter includes an ion generator for generating ions to be doped with impurities, and an ion analyzer for controlling the kind and energy of generated ions.

An ion generating device is an apparatus for generating ions to be implanted into a wafer in an ion implanter, and a plasma is formed by injecting a doping gas into an inner space of an arc chamber to generate ions. In the interior of the arc chamber, a cathode for emitting electrons and a repeller for pushing out electrons emitted from the cathode are provided, and electrons are accelerated toward the arc chamber to form a plasma.

During the generation of ions, a lot of heat is generated in the arc chamber, and the arc chamber is mainly made of heat resistant metal. Since the arc chamber is a space in which the plasma is formed, the plasma generation efficiency varies depending on the geometry of the arc chamber. Korean Patent No. 0688573, which is a prior art on the shape of an arc chamber, discloses an arc chamber having a bulky shape in the central portion compared to both end regions. However, since the arc chamber is made of a metal such as tungsten which is expensive and difficult to process, there is a problem that the manufacturing cost of the arc chamber increases when the internal shape is processed in this way.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an arc chamber for an ion implanter having improved plasma generation efficiency and reduced manufacturing cost.

A second object of the present invention is to provide an ion generator for an ion implanter including the arc chamber for the ion implanter.

In order to accomplish the first object of the present invention, there is provided an arc chamber for generating ions necessary for an ion implantation process by forming a plasma therein, comprising: a heat-resistant metal body having an open top and a predetermined space formed therein; An arc for an ion implanter including a curved surface filling member mounted on an inner space of the body and including a curved surface and a liner having the same shape as the surface of the curved filling member and preventing the curved filling member from being exposed to plasma Thereby providing a chamber.

According to an embodiment of the present invention, the heat resistant metal body may be made of tungsten, molybdenum, rhenium, or tantalum, and the curved surface filling member may be made of a carbon-based material.

According to another embodiment of the present invention, a gas flow path may be formed in a space between the heat resistant metal body and the curved surface filling member.

According to another embodiment of the present invention, a groove may be formed in the heat-resistant metal body or the curved surface filling member to form the gas flow path.

According to another embodiment of the present invention, a gas hole is formed in the liner, and a gas flow path connecting the gas hole and the groove may be formed in the curved surface filling member.

According to another embodiment of the present invention, a plurality of gas holes formed in the liner may be formed on the lower and side portions of the liner.

In order to achieve the first object, the present invention provides an ion generator for an ion implanter including an arc chamber for the ion implanter.

The arc chamber for the ion implanter of the present invention has the following effects.

1. The internal space of the arc chamber is formed into a curved surface, thereby improving the plasma generation efficiency.

2. The manufacturing cost of the arc chamber is reduced by using a carbon-based material and a plate-shaped heat-resistant metal material liner which are easy to process in order to form the arc space inside the curved surface.

3. By forming the gas flow path by using the groove formed in the heat resistant metal body or the curved filling member, it is possible to form the gas injection hole uniformly distributed in the inner space of the arc chamber, thereby uniformizing the gas pressure inside the arc chamber The plasma generation efficiency can be improved.

4. Combining a curved filler having a downwardly concave inner surface and a curved filler having an upwardly convex inner surface, an arc chamber interior shape having a generally round cross-section can be realized.

FIG. 1 shows the structure of a conventional arc chamber for an ion implanter.
2 shows a structure of an arc chamber for an ion implanter of the present invention.
3 is a view for explaining a gas flow path formed in an arc chamber for an ion implanter of the present invention.
FIG. 4 illustrates a groove formed in a heat resistant metal body or a curved surface filling member of an arc chamber according to the present invention.
FIG. 5 shows an arc chamber for an ion implanter with a curved filler member vertically separated according to the present invention.
6 shows a process of assembling an arc chamber for an ion implanter with a curved surface filling member vertically separated.

Hereinafter, the present invention will be described in more detail with reference to the drawings.

An arc chamber for an ion implanter according to the present invention is an arc chamber for generating ions necessary for an ion implantation process by forming a plasma in an interior thereof, a heat resistant metal body having an upper portion opened and a predetermined space formed therein, And a liner which has the same shape as the surface of the curved surface filling member and prevents the curved surface filling member from being exposed to the plasma.

The arc chamber for the ion implanter of the present invention includes a curved filling member and a liner inside the arc chamber, so that the plasma forming space has a curved surface. The arc chamber is made of heat-resistant metal such as tungsten because it generates a lot of heat during the process. Formation of a curved surface in the arc chamber has a problem of high processing cost and wasting tungsten material which is not used in the processing. According to the present invention, the manufacturing cost of the arc chamber is reduced by assembling a curved filler member of carbon material having a curved surface inside the heat resistant metal body forming the outside of the arc chamber, A gas flow path for injecting the doping gas into the arc chamber is easily formed by a simple method of processing the gas. The gas flow path formed in this manner can easily form a gas inflow path on the side and upper part as well as the lower part of the arc chamber, so that the gas pressure inside the arc chamber can be uniformly maintained.

BRIEF DESCRIPTION OF THE DRAWINGS Fig.

FIG. 1 shows the structure of a conventional arc chamber for an ion implanter. Referring to FIG. 1, a conventional arc chamber 100 for an ion implanter includes an arc chamber body 101, an ion extraction top plate 102, a repeller 103, and a cathode 104. The arc chamber body 101 has an inner space of a rectangular parallelepiped. To this end, the arc chamber body 101 is joined to a plate made of a heat resistant metal at its lower and both ends and both sides. The arc chamber body 101 is made of a heat resistant metal such as tungsten, molybdenum, or tantalum, which has high heat resistance, and a liner for protecting an inner surface exposed to the plasma, not shown in the figure, may be provided. A gas injection pipe through which gas flows is generally connected to the lower portion of the arc chamber body 101. An ion extraction top plate 102 is installed on the upper part of the arc chamber body 101. The ions generated in the arc chamber are extracted to the outside through a hole formed in the ion extraction top plate 102. The cathode 104 and the repeller 103 are installed at both end regions of the arc chamber, where the cathode 104 emits electrons and the repeller pushes out the emitted electrons to improve the plasma generation efficiency.

2 shows a structure of an arc chamber for an ion implanter of the present invention. 2 (a), the arc chamber 201 includes a heat-resistant metal body 201, a curved filler member 202, and a liner 203. The heat-resistant metal body 201 is made of a heat-resistant metal such as tungsten, molybdenum, or tantalum, and has an internal space of a hexahedron for convenience of processing. The curved filler member 202 is fastened to the inside of the heat resistant metal sea 201. The upper and the side surfaces are curved to minimize the angular surface in the space where the plasma is formed and the same cross section as the circular cathode and the repeller I have. The curved filling member is made of a carbon-based material such as graphite. The carbon-based material is cheaper than the heat-resistant metal and is easy to process, which is very advantageous for forming a curved surface inside the arc chamber. The inner surface of the curved filler member 202 is joined with a liner 203 having the same shape. The liner is made of a plate-shaped refractory metal. The method of producing the liner having a curved surface is to place the plate-like tungsten material on a mold frame (jig) of heat-resistant steel, heat the mold and the tungsten material to high temperature, It can be easily manufactured. A method of forming a curved surface in an arc chamber without using a curved filler member made of a carbon-based material as in the present invention includes a method of forming a curved surface by processing a material of a heat resistant metal body, The second is to apply curved liners without curved filler elements. However, the first method is not economical because it is difficult to process, and there are many wasted tungsten materials. Second, there is an empty space between the heat-resistant metal body and the liner, so that the heat generated from the plasma is difficult to escape to the outside Lt; / RTI > 2 (b), the curved filler member 202 is filled in contact with the inside of the heat resistant metal body 201 having a predetermined thickness, and the curved filler member 202 Shaped liner 203 is joined to the plate-like shape.

As in the present invention, the plasma generation efficiency of the arc chamber having the curved inner space is increased. In order to increase the plasma generation efficiency, it is advantageous that there is no angled surface in the discharge forming space and the structure is symmetrical as a whole. When the inner space of the arc chamber is a rectangular parallelepiped like the conventional arc chamber, the distance between the cathode and the repeller to the surrounding arc chamber wall is not uniform, thereby lowering the plasma generation efficiency. Further, in order to improve the discharge efficiency, it is advantageous that the gas pressure in the discharge space is uniform. In the present invention, since the gas inflow hole can be formed uniformly in the arc chamber, the discharge efficiency can be further improved.

3 is a view for explaining a gas flow path formed in an arc chamber for an ion implanter of the present invention. 3 (a) is a cross-sectional view of a region where a gas flow path is formed in the arc chamber of the present invention. In the region between the heat resistant metal body 201 and the curved filler member 202, The gas passage 204 is connected to the arc chamber interior space through the curved filler member 202 and the liner 203. Therefore, in this structure, the gas injected from the gas pipe connected to the lower portion of the arc chamber can be evenly injected to the lower and both sides of the arc chamber. A plurality of liner gas holes 204a are formed in the lower and both side portions of the liner 203 and the liner gas holes 204a are formed in the curved surface filling member 202, The gas holes are formed at positions corresponding to the gas holes. It is preferable that the gas hole of the liner is smaller than the hole of the curved filler member in order to prevent the carbonaceous material from being exposed to the plasma.

The arc chamber of the present invention is characterized in that a gas flow path is formed in a space between the heat resistant metal body and the curved surface filling member. This is because the curved filling member is installed in the inner space of the heat-resistant metal body. In the case of using only the curved surface filling member, a separate gas flow path must be formed in the curved surface filling member. However, it is very difficult to form the flow path into the graphite material while changing the direction from below to upward. On the other hand, in the present invention, a plurality of gas injection holes can be formed in the plasma generation space by a simple process of forming a groove in the heat resistant metal body or the curved filler member and processing a straight channel in the curved filler member.

FIG. 4 illustrates a groove formed in a heat resistant metal body or a curved surface filling member of an arc chamber according to the present invention. Referring to Fig. 4 (a), a groove 204b is formed on the lower surface (shown in the upper part of Fig. 4) of the curved surface filling member 202 and on the side surface. The grooves are connected to each other so that the gas injected from the bottom is connected to the liner gas holes along the respective grooves. Referring to FIG. 4 (B), grooves 204c are formed on the lower and side portions of the inner space of the heat-resistant metal body 201. The grooves may be formed on the heat resistant metal body, the curved filler member, or both.

The plasma generation efficiency is improved as the cross section of the space inside the arc chamber is closer to the circular shape. Since the gas extraction hole of the ion extraction top plate is formed in the upper part of the arc chamber, the cross-section of the curved filler member does not have a perfect circular shape, and the upper part has a cut shape. The configuration for such a structure will be described with reference to FIG.

FIG. 5 shows an arc chamber for an ion implanter with a curved filler member vertically separated according to the present invention. Referring to FIG. 5, the liner 203 is not curved at its bottom but curved at its top. The curved filling member is separated into an upper curved filling member 202b and a lower curved filling member 202a at positions where the side tangents of the liner are vertical. This considers the convenience of assembling the curved filling member and the liner in the inner space of the heat-resistant metal body 201.

6 shows a process of assembling an arc chamber for an ion implanter with a curved surface filling member vertically separated. Referring to FIG. 6, the lower curved surface filling member 202a is assembled to the heat resistant metal body 201 first. Then, the liner 203 is assembled to the curved surface of the lower curved surface filling member 202a. Subsequently, the upper curved surface filling member 202b is assembled to both side portions of the liner 203. [ At this time, such an assembly is possible only when the upper curved filler member and the lower curved filler member are in contact with each other at positions where the side tangents of the liner are perpendicular to each other. Although not shown in the drawing, a separate groove or fastening portion for fixing the positions of the heat-resistant metal body, the upper curved filler member, the lower curved filler member, and the liner may be additionally formed.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, the embodiments described in the present invention are not intended to limit the scope of the present invention but to limit the scope of the present invention. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: arc chamber 101: arc chamber body
102: ion extraction top plate 103: repeller
104: cathode
200: arc chamber 201: heat resistant metal body
202: curved surface filling member 203: liner
204: gas channel 204a: liner gas hole
204b and 204c:

Claims (7)

1. An arc chamber for generating a plasma in an inner space to generate ions necessary for an ion implantation process,
A heat-resistant metal body having an upper portion thereof opened and a predetermined space formed therein;
A curved surface filling member mounted on an inner space of the heat resistant metal body and including a curved surface; And
And a liner having the same shape as the surface of the curved filler member and preventing the curved filler member from being exposed to the plasma. The method according to claim 1,
Wherein the heat resistant metal body is made of tungsten, molybdenum, rhenium or tantalum, and the curved surface filling member is made of a carbon-based material. The method according to claim 1,
And a gas flow path is formed in a space between the heat resistant metal body and the curved surface filling member. The method of claim 3,
And a groove is formed in the heat resistant metal body or the curved surface filling member to form the gas flow path. The method of claim 4,
Wherein a gas hole is formed in the liner and a gas flow path connecting the gas hole and the groove is formed in the curved surface filling member. The method of claim 5,
And a gas hole formed in the liner is formed on a lower portion and a side portion of the liner. An ion generating device for an ion implanter comprising an arc chamber for an ion implanter according to claim 1.
KR1020150159017A 2015-11-12 2015-11-12 Arc chamber for ion implanter KR101769844B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102034729B1 (en) * 2018-05-04 2019-10-21 (주)뉴젠텍 A Plasma Block for Generating and Guiding a Plasma
US11682540B2 (en) 2019-07-18 2023-06-20 Entegris, Inc. Ion implantation system with mixture of arc chamber materials

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688573B1 (en) 2005-09-16 2007-03-02 삼성전자주식회사 Ion source element, ion implanter having the same and method of modifying thereof
KR101132720B1 (en) * 2010-12-27 2012-04-19 주식회사성심 Tungsten coated liner and arc chamber of ion implantation apparatus
CN103225950B (en) * 2013-04-28 2015-09-30 西部超导材料科技股份有限公司 For the water-cooled furnace chamber of vacuum consumable electrode arc furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102034729B1 (en) * 2018-05-04 2019-10-21 (주)뉴젠텍 A Plasma Block for Generating and Guiding a Plasma
US11682540B2 (en) 2019-07-18 2023-06-20 Entegris, Inc. Ion implantation system with mixture of arc chamber materials

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