CN220155490U - Wafer testing device - Google Patents

Wafer testing device Download PDF

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Publication number
CN220155490U
CN220155490U CN202321330196.1U CN202321330196U CN220155490U CN 220155490 U CN220155490 U CN 220155490U CN 202321330196 U CN202321330196 U CN 202321330196U CN 220155490 U CN220155490 U CN 220155490U
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module
probe card
cleaning
laser
wafer
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CN202321330196.1U
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Chinese (zh)
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罗威
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Shanghai Jinjin Microelectronics Technology Co ltd
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Shanghai Jinjin Microelectronics Technology Co ltd
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Abstract

The utility model discloses a wafer testing device, which comprises: the probe card comprises a carrier, a probe card and a laser cleaning module; when the wafer is tested, the probe card is electrically connected with the chips in the wafer, and the probe card is used for transmitting electric signals to the chips in the wafer; when the probe card is cleaned, the probe card is positioned on one side of the carrier, the laser cleaning module is positioned on one side of the probe card away from the carrier, and the laser cleaning module is used for generating laser for cleaning the probe card. The wafer testing device provided by the utility model can test the performance of chips in a wafer, can also perform laser cleaning on the probe card, does not need to manually clean the probe card, improves the cleaning effect and the cleaning efficiency of the probe card, and prolongs the service life of the probe card.

Description

Wafer testing device
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a wafer testing device.
Background
In the process of semiconductor manufacturing, before a wafer is cut into packaged chips, electrical performance tests are performed on the chips in the wafer to test out failed chips in the wafer.
In the test process, a Probe Card (Probe Card) having a plurality of probes is generally used to contact a wafer, an electric signal is applied to the wafer, and inspection of each chip of the wafer is performed based on a response thereto. In the testing process, impurities are easily attached to probes in the probe card, so that the problems of short circuit or open circuit of the probes and the like are caused, and the testing of the wafer is not facilitated. Therefore, cleaning of the probes in the probe card is required.
The existing cleaning method is that staff adopts a cleaning sheet to rub the probe to remove impurities in the probe, and the cleaning method consumes manpower, has poor cleaning effect and is easy to cause abrasion of the probe in the probe card, so that the service life of the probe card is reduced.
Disclosure of Invention
The utility model provides a wafer testing device which can test the performance of chips in a wafer, can also perform laser cleaning on a probe card, does not need to manually clean the probe card, improves the cleaning effect and the cleaning efficiency of the probe card, and prolongs the service life of the probe card.
The utility model provides a wafer testing device, which comprises: the probe card comprises a carrier, a probe card and a laser cleaning module;
when the wafer is tested, the probe card is electrically connected with the chips in the wafer, and the probe card is used for transmitting electric signals to the chips in the wafer;
when the probe card is cleaned, the probe card is positioned on one side of the carrier, the laser cleaning module is positioned on one side of the probe card away from the carrier, and the laser cleaning module is used for generating laser for cleaning the probe card.
Optionally, the wafer testing device provided in this embodiment further includes a camera module and a control module;
the camera module is electrically connected with the control module and is used for photographing the probe card, generating image information and sending the image information to the control module;
the control module is electrically connected with the laser cleaning module, and the control module is used for closing the laser cleaning module when the probe card is determined to be cleaned according to the image information.
Optionally, the wafer testing apparatus provided in this embodiment further includes an alignment module;
the alignment module is electrically connected with the laser cleaning module and is used for moving the laser cleaning module to one side of the probe card away from the carrier and enabling laser generated by the laser cleaning module to be aligned with the probe card.
Optionally, the wafer testing device provided in this embodiment further includes a vacuum module;
the vacuumizing module is electrically connected with the control module;
when the probe card is cleaned, the control module controls the vacuumizing module to suck air in the area where the probe card is located, so that the probe card is in a vacuum environment when being cleaned.
Optionally, the wafer testing device provided in this embodiment further includes a moving module;
the mobile module is electrically connected with the control module;
when the probe card is cleaned, the control module controls the moving module to move the wafer to an area which does not receive the laser.
Optionally, the wafer testing device provided in this embodiment further includes a cleaning start module;
the cleaning starting module is electrically connected with the probe card and is used for detecting whether the probe card needs cleaning or not.
Optionally, the wafer testing device provided in this embodiment further includes a temperature adjustment module;
the temperature adjusting module is used for adjusting the temperature in the wafer testing device.
Optionally, the wafer testing device provided in this embodiment further includes an instruction receiving module;
the instruction receiving module is electrically connected with the control module and is used for receiving a cleaning instruction and sending the cleaning instruction to the control module;
the control module is electrically connected with the laser cleaning module, and is used for controlling the laser cleaning module to be positioned on one side of the probe card away from the carrier when receiving the cleaning instruction and enabling the laser cleaning module to generate laser for cleaning the probe card.
Optionally, the camera module comprises a photo-sensitive coupled digital camera.
Optionally, the laser is a plasma laser.
The embodiment provides a wafer testing device, which comprises a probe card, wherein the probe card can be electrically connected with a wafer and generate an electric signal to chips in the wafer when the wafer is tested, so as to test the advantages and disadvantages of the chips in the wafer. The wafer testing device further comprises a laser cleaning module and a carrying platform, when the probe card is cleaned, the carrying platform can bear the probe card, the laser cleaning module can generate laser and irradiate the probe card, so that impurities in the probe card are gasified, melted or burnt to disappear, the effect of cleaning the probe card is achieved, and the laser cleaning probe card can avoid abrasion of probes in the probe card to influence the service life of the probe card. In summary, the wafer testing device provided in this embodiment not only can test the performance of the chip in the wafer, but also can perform laser cleaning on the probe card, without manually cleaning the probe card, thereby improving the cleaning effect and the cleaning efficiency of the probe card, and prolonging the service life of the probe card.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the utility model or to delineate the scope of the utility model. Other features of the present utility model will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic perspective view of a wafer testing apparatus according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a wafer test apparatus according to an embodiment of the present utility model;
FIG. 3 is a schematic diagram of another wafer test apparatus according to an embodiment of the present utility model;
FIG. 4 is a schematic diagram of another wafer test apparatus according to an embodiment of the present utility model;
FIG. 5 is a schematic diagram of another wafer test apparatus according to an embodiment of the present utility model;
FIG. 6 is a schematic diagram of another wafer test apparatus according to an embodiment of the present utility model;
fig. 7 is a flowchart of a probe card cleaning method according to an embodiment of the utility model.
Detailed Description
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic perspective view of a wafer testing apparatus according to an embodiment of the present utility model, and fig. 2 is a schematic perspective view of a wafer testing apparatus according to an embodiment of the present utility model, referring to fig. 1 and fig. 2, a wafer testing apparatus 100 according to an embodiment of the present utility model includes: a stage 110, a probe card 120, and a laser cleaning module 130; when testing the wafer, the probe card 120 is electrically connected with the chips in the wafer, and the probe card 120 is used for transmitting the electric signals to the chips in the wafer; when the probe card 120 is cleaned, the probe card 120 is located at one side of the carrier 110, the laser cleaning module 130 is located at one side of the probe card 120 away from the carrier 110, and the laser cleaning module 130 is used for generating laser for cleaning the probe card 120.
Specifically, the probe card 120 includes a plurality of probes, and the wafer includes a plurality of chips. Before packaging the chips in the wafer, the wafer needs to be placed into the wafer testing device 100 to test the performance of the wafer to select the failed chips, so as to avoid packaging the failed chips.
When testing a wafer, the probes in the probe card 120 can be used as a medium for transmitting electrical signals, the probes in the probe card 120 are electrically connected with the chips in the wafer and transmit the electrical signals to the chips, then receive feedback signals fed back by the chips in the wafer, and transmit the feedback signals to a tester in the wafer testing device 100, and the tester can judge whether the chips in the wafer are qualified or not according to the feedback signals. During long-term testing of the wafer, a portion of the impurities may adhere to the surface of the probe card 120, and the portion of the impurities may cause problems such as disconnection or short-circuiting of the probes in the probe card 120. If the wafer is tested by using the probe card 120 with the impurities attached thereto, the chips in the wafer are easily damaged, and therefore, the probe card 120 needs to be cleaned in time to remove the impurities.
The laser cleaning module 130 in the wafer test apparatus 100 provided in this embodiment can remove impurities in the probe card 120. The laser cleaning module 130 includes a laser that can emit laser light. When the probe card 120 needs to be cleaned, the probe card 120 may be located on the surface of the carrier 110, the laser cleaning module 130 is located on one side of the probe card 120 away from the carrier 110, and the laser cleaning module 130 may have a certain distance from the probe card 120, the laser cleaning module 130 generates laser transmitted to the probe card 120, and the laser may gasify, melt or burn impurities in the probe card 120, thereby removing impurities in the probe card 120 and completing cleaning of the probe card 120. The amount of laser energy generated by the laser cleaning module 130 and the duration of the laser generation can be set manually, or can be automatically adjusted according to the amount of impurities in the probe card 120.
The use of the laser cleaning module 130 to clean the probe card 120 in this embodiment may include the following benefits:
(1) When cleaning the probe card 120, the laser cleaning module 130 in the wafer test apparatus 100 can be directly used to clean the probe card 120 without taking out the probe card 120 from the wafer test apparatus 100, thereby improving the cleaning efficiency.
(2) The laser output by the laser cleaning module 130 is used for cleaning, so that abrasion of the probes in the probe card 120 caused by friction can be avoided, and the service life of the probe card 120 is prolonged.
(3) Because the laser cleaning module 130 outputs laser with stable energy, the cleaning effect of each probe in the probe card 120 can be consistent by adopting laser to clean, and the problem of inconsistent cleaning effects of different probes in the same probe card 120 caused by unbalanced manual output during manual cleaning is avoided.
(4) Since the energy of the laser is relatively high, the laser generated by the laser cleaning module 130 may quickly remove the impurities in the probe card 120, thereby improving the cleaning efficiency.
(5) The laser output by the laser cleaning module 130 is used for cleaning, manual cleaning is not needed, manpower is saved, and cleaning efficiency can be further improved.
The embodiment provides a wafer testing device, which comprises a probe card, wherein the probe card can be electrically connected with a wafer and generate an electric signal to chips in the wafer when the wafer is tested, so as to test the advantages and disadvantages of the chips in the wafer. The wafer testing device further comprises a laser cleaning module and a carrying platform, when the probe card is cleaned, the carrying platform can bear the probe card, the laser cleaning module can generate laser and irradiate the probe card, so that impurities in the probe card are gasified, melted or burnt to disappear, the effect of cleaning the probe card is achieved, and the laser cleaning probe card can avoid abrasion of probes in the probe card to influence the service life of the probe card. In summary, the wafer testing device provided in this embodiment not only can test the performance of the chip in the wafer, but also can perform laser cleaning on the probe card, without manually cleaning the probe card, thereby improving the cleaning effect and the cleaning efficiency of the probe card, and prolonging the service life of the probe card.
Optionally, fig. 3 is a schematic structural diagram of another wafer testing apparatus according to an embodiment of the present utility model, and referring to fig. 3, the wafer testing apparatus 100 provided in this embodiment further includes a camera module 140 and a control module 150; the camera module 140 is electrically connected to the control module 150, and the camera module 140 is configured to take a photograph of the probe card 120 and generate image information to send to the control module 150; the control module 150 is electrically connected to the laser cleaning module 130, and the control module 150 is configured to turn off the laser cleaning module 130 when it is determined that the cleaning of the probe card 120 is completed according to the image information.
Specifically, after cleaning the probe card 120 is completed, in order to detect the cleaning effect, the camera module 140 may be used to take a picture of the probe card 120 and generate image information to send to the control module 150. The control module 150 analyzes the image information after receiving the image information to detect whether the probe card 120 is cleaned, i.e., whether impurities are present on the probe card 120. If the cleaning is completed (indicating that there is no impurity in the probe card 120), the control module 150 can timely turn off the laser cleaning module 130 and control the probe card 120 to electrically connect with the chips in the wafer, so that the probe card 120 continues to test the wafer. If the cleaning is not completed, the control module 150 may control the laser cleaning module 130 to continuously emit laser to the area of the probe card 120 to be cleaned, which indicates that the impurities remain on the probe card 120. In summary, the camera module 140 and the control module 150 are provided in this embodiment to detect whether the probe card 120 is cleaned, so as to ensure the cleaning effect of the probe card 120.
Fig. 4 is a schematic structural diagram of another wafer testing apparatus according to an embodiment of the present utility model, and referring to fig. 4, the wafer testing apparatus 100 provided in this embodiment further includes an alignment module 160; the alignment module 160 is electrically connected to the laser cleaning module 130, and the alignment module 160 is used to move the laser cleaning module 130 to a side of the probe card 120 away from the carrier 110 and align the laser generated by the laser cleaning module 130 to the probe card 120.
Specifically, with continued reference to fig. 4, the alignment module 160 includes a moving unit 161 and an impurity capturing unit 162, the impurity capturing unit 162 is electrically connected to the moving unit 161, the impurity capturing unit 162 can detect an area of the probe card 120 where the impurity is located, and send impurity information in the probe card 120 to the moving unit 161, the moving unit 161 is electrically connected to the laser cleaning module 130, the moving unit 161 can move the laser cleaning module 130 to above the probe card 120 having the impurity according to the impurity information, and start the laser cleaning module 130, so that laser generated by the laser cleaning module 130 can be aligned to the impurity in the probe card 120, thereby rapidly and accurately removing the impurity in the probe card 120. In summary, the alignment module 160 in the wafer testing apparatus 100 provided in this embodiment can detect the area where the impurity in the probe card 120 is located and move the laser cleaning module 130, so that the laser generated by the laser cleaning module 130 can precisely irradiate the impurity area of the probe card 120, the cleaning efficiency of the probe card 120 is improved, and the arrangement of the alignment module 160 can enable the wafer testing apparatus 100 to realize automatic cleaning, save labor and improve cleaning efficiency. The alignment module 160 in this embodiment may be electrically connected to the control module 150, and the control module 150 may control the operation state of the alignment module 160.
Optionally, fig. 5 is a schematic structural diagram of another wafer testing apparatus according to an embodiment of the present utility model, and referring to fig. 5, the wafer testing apparatus 100 provided in this embodiment further includes a vacuum module 170; the vacuumizing module 170 is electrically connected with the control module 150; when the probe card 120 is cleaned, the control module 150 controls the vacuum module 170 to draw air in the area where the probe card 120 is located, so that the probe card 120 is in a vacuum environment when cleaned.
Specifically, when the laser cleaning module 130 is used for cleaning the probe card 120, the vacuumizing module 170 is always in a working state, that is, the vacuumizing module 170 always extracts air in the area where the probe card 120 is located, so that impurities in a molten state after receiving laser, gasified impurities or impurity combustion objects can be timely sucked away by the vacuumizing module 170, impurities are prevented from remaining in the probe card 120, and accordingly cleaning effect is further improved.
Optionally, fig. 6 is a schematic structural diagram of another wafer testing apparatus according to an embodiment of the present utility model, and referring to fig. 6, the wafer testing apparatus 100 provided in this embodiment further includes a moving module 180; the mobile module 180 is electrically connected with the control module 150; when cleaning the probe card 120, the control module 150 controls the moving module 180 to move the wafer to an area where the laser light is not received.
Specifically, if the chips in the wafer receive the laser light generated by the laser cleaning module 130, the chips in the wafer may be damaged, so in order to avoid the chips in the wafer from being damaged, the moving module 180 is provided in this embodiment, the moving module 180 may move the wafer and move the wafer to an area where the laser light cannot be irradiated, that is, the wafer is not irradiated by the laser light when the probe card 120 is cleaned. The moving module 180 in this embodiment may move other devices that are not resistant to laser irradiation, and the moving module 180 may be a robot.
Optionally, with continued reference to fig. 6, the wafer testing apparatus 100 provided in this embodiment further includes a cleaning start module 190; the cleaning initiation module 190 is electrically connected to the probe card 120, and the cleaning initiation module 190 is used for detecting whether the probe card 120 needs cleaning.
Specifically, the cleaning start module 190 may include a camera detection unit, where the camera detection unit may check whether impurities exist on the probe card 120 to determine whether cleaning of the probe card 120 is required, if the camera detection unit detects that impurities exist in the probe card 120, the camera detection unit starts the laser cleaning module 130, so that the laser cleaning module 130 generates laser to clean impurities in the probe card 120, and if the camera detection unit does not detect impurities in the probe card 120, the camera detection unit is always in a detection state until impurities exist in the probe card 120.
Because the probes in the probe card 120 can feed back the feedback signals sent by the chips in the wafer, the cleaning start module 190 can determine whether the probe card 120 has impurities by receiving the feedback signals transmitted by the probe card 120, and illustratively, when the probe card 120 is short-circuited by the impurities in the probe card 120, the feedback signals exceed a first set value, and the cleaning start module 190 can determine that the probe card 120 needs to be cleaned when detecting that the feedback signals exceed the first set value, that is, the impurities exist on the probe card 120, so as to start the laser cleaning module 130. When the probe card 120 is broken by the impurities present in the probe card 120, the feedback signal is smaller than the second set value, and the cleaning start module 190 may determine that the probe card 120 needs to be cleaned when detecting that the feedback signal is smaller than the second set value, that is, the impurities are present in the probe card 120, so as to start the laser cleaning module 130.
The cleaning start module 190 may also be electrically connected to the control module 150, and when the cleaning start module 190 detects that the probe card 120 needs to be cleaned, a start signal may be sent to the control module 150, and after the control module 150 receives the start signal, the control module 150 may control the vacuumizing module 170, the moving module 180, and the camera module 140 to start working. The cleaning starting module 190 is arranged in the embodiment, so that full-automatic cleaning of the probe card 120 can be realized, manual operation is not needed, intelligent cleaning is realized, and manpower is saved.
Optionally, with continued reference to fig. 6, the wafer testing apparatus 100 provided in the present embodiment further includes a temperature adjustment module 210; the temperature adjustment module 210 is used for adjusting the temperature in the wafer test apparatus.
Specifically, the temperature adjusting module 210 may cool or heat, and the temperature adjusting module 210 may adjust the temperature in the wafer testing apparatus 100, so that when testing a wafer, the temperature of the wafer may be indirectly adjusted to improve the accuracy of the wafer test. When the probe card 120 is cleaned, the temperature adjusting module 210 can also indirectly adjust the temperature of the laser cleaning module 130, so that the problem of poor heat dissipation caused by long-time operation of the laser cleaning module 130 can be avoided.
Optionally, with continued reference to fig. 6, the wafer testing apparatus provided in this embodiment further includes an instruction receiving module 220; the instruction receiving module 220 is electrically connected with the control module 150, and the instruction receiving module 220 is used for receiving the cleaning instruction and sending the cleaning instruction to the control module 150; the control module 150 is electrically connected to the laser cleaning module 130, and the control module 150 is configured to control the laser cleaning module 130 to be located at a side of the probe card 120 away from the carrier 110 when receiving the cleaning command, and enable the laser cleaning module 130 to generate laser for cleaning the probe card 120.
Specifically, the instruction receiving module 220 may be a touch display panel, a key, or a keyboard. The instruction receiving module 220 may receive a cleaning instruction transmitted by a worker. It can be seen that the wafer testing apparatus 100 provided in this embodiment can realize the manual control of the laser cleaning module 130 so as to achieve the effect of cleaning the probe card 120 by laser. After the control module 150 receives the cleaning command, it may control the evacuation module 170, the movement module 180, the alignment module 160, and the camera module 140 to start operating.
Optionally, the camera module comprises a photo-sensitive coupled digital camera.
Specifically, the photosensitive coupling digital camera has the characteristics of wide shooting visual angle, good shooting effect and the like. The photosensitive coupling digital camera is arranged in the camera module, so that the effect of detecting whether the probe card is clean or not can be improved.
Alternatively, the laser is a plasma laser.
Specifically, the beam property of the plasma laser is good, the plasma laser is adopted for cleaning, and the impurity can be accurately irradiated to the impurity position, so that the impurity cleaning effect is improved, the damage to the probe card caused by the fact that the plasma laser irradiates to an area which does not need to be cleaned in the probe card is avoided, and the cleaning effect can be improved by setting the laser as the plasma laser. In addition, the energy of the plasma laser is higher, so that impurities in the probe card can be removed rapidly, and the cleaning efficiency is improved.
The embodiment also provides a probe card cleaning method, which is applied to the wafer testing device provided by any embodiment of the utility model, and fig. 7 is a schematic flow chart of the probe card cleaning method provided by the embodiment of the utility model, and referring to fig. 7, the probe card cleaning method provided by the embodiment comprises the following steps:
s110, detecting that impurities exist in the probe card when the probe card tests the wafer.
And S120, moving the wafer to an area not receiving laser.
S130, starting an alignment module, wherein after the alignment module is started, the laser cleaning module is moved to one side of the probe card away from the carrier, and laser generated by the laser cleaning module is aligned to the probe card.
S140, starting a laser cleaning module, wherein the laser cleaning module generates laser for cleaning the probe card.
And S150, determining that the cleaning of the probe card is finished.
S160, the probe card continues to test the wafer.
With continued reference to fig. 7, the method for cleaning a probe card provided in this embodiment may further include the following steps:
s170, receiving a cleaning instruction.
S130, starting an alignment module, wherein after the alignment module is started, the laser cleaning module is moved to one side of the probe card away from the carrier, and laser generated by the laser cleaning module is aligned to the probe card.
S140, starting a laser cleaning module, wherein the laser cleaning module generates laser for cleaning the probe card.
And S150, determining that the cleaning of the probe card is finished.
S160, the probe card continues to test the wafer.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present utility model may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present utility model are achieved, and the present utility model is not limited herein.
The above embodiments do not limit the scope of the present utility model. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included in the scope of the present utility model.

Claims (10)

1. A wafer testing apparatus, comprising: the probe card comprises a carrier, a probe card and a laser cleaning module;
when the wafer is tested, the probe card is electrically connected with the chips in the wafer, and the probe card is used for transmitting electric signals to the chips in the wafer;
when the probe card is cleaned, the probe card is positioned on one side of the carrier, the laser cleaning module is positioned on one side of the probe card away from the carrier, and the laser cleaning module is used for generating laser for cleaning the probe card.
2. The wafer test apparatus of claim 1, further comprising a camera module and a control module;
the camera module is electrically connected with the control module and is used for photographing the probe card, generating image information and sending the image information to the control module;
the control module is electrically connected with the laser cleaning module, and the control module is used for closing the laser cleaning module when the probe card is determined to be cleaned according to the image information.
3. The wafer test apparatus of claim 1, further comprising an alignment module;
the alignment module is electrically connected with the laser cleaning module and is used for moving the laser cleaning module to one side of the probe card away from the carrier and enabling laser generated by the laser cleaning module to be aligned with the probe card.
4. The wafer test apparatus of claim 2, further comprising a vacuum module;
the vacuumizing module is electrically connected with the control module;
when the probe card is cleaned, the control module controls the vacuumizing module to suck air in the area where the probe card is located, so that the probe card is in a vacuum environment when being cleaned.
5. The wafer test apparatus of claim 2, further comprising a movement module;
the mobile module is electrically connected with the control module;
when the probe card is cleaned, the control module controls the moving module to move the wafer to an area which does not receive the laser.
6. The wafer test apparatus of claim 1, further comprising a clean start module;
the cleaning starting module is electrically connected with the probe card and is used for detecting whether the probe card needs cleaning or not.
7. The wafer test apparatus of claim 1, further comprising a temperature adjustment module;
the temperature adjusting module is used for adjusting the temperature in the wafer testing device.
8. The wafer test apparatus of claim 2, further comprising an instruction receiving module;
the instruction receiving module is electrically connected with the control module and is used for receiving a cleaning instruction and sending the cleaning instruction to the control module;
the control module is electrically connected with the laser cleaning module, and is used for controlling the laser cleaning module to be positioned on one side of the probe card away from the carrier when receiving the cleaning instruction and enabling the laser cleaning module to generate laser for cleaning the probe card.
9. The wafer testing apparatus of claim 2, wherein the camera module comprises a photo-sensitive coupled digital camera.
10. The wafer testing apparatus of claim 1, wherein the laser is a plasma laser.
CN202321330196.1U 2023-05-29 2023-05-29 Wafer testing device Active CN220155490U (en)

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CN202321330196.1U CN220155490U (en) 2023-05-29 2023-05-29 Wafer testing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202321330196.1U CN220155490U (en) 2023-05-29 2023-05-29 Wafer testing device

Publications (1)

Publication Number Publication Date
CN220155490U true CN220155490U (en) 2023-12-08

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