CN220132329U - Physical vapor deposition equipment - Google Patents
Physical vapor deposition equipment Download PDFInfo
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- CN220132329U CN220132329U CN202321686317.6U CN202321686317U CN220132329U CN 220132329 U CN220132329 U CN 220132329U CN 202321686317 U CN202321686317 U CN 202321686317U CN 220132329 U CN220132329 U CN 220132329U
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- Prior art keywords
- annular body
- vapor deposition
- physical vapor
- wall
- deposition apparatus
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- 238000005240 physical vapour deposition Methods 0.000 title claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000004062 sedimentation Methods 0.000 claims description 6
- 241000826860 Trapezium Species 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000006835 compression Effects 0.000 abstract description 8
- 238000007906 compression Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 nitrogen ions Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model belongs to the field of physical vapor deposition equipment, and particularly relates to physical vapor deposition equipment, which comprises a deposition chamber, wherein a magnetic control chamber is arranged above the deposition chamber, the bottom end of the outer wall of the magnetic control chamber is fixedly connected with a target, a compression ring device is arranged below the connecting target, the compression ring device comprises a fixed round table, the bottom of the fixed round table is fixedly connected with the bottom end of the inner wall of the deposition chamber, the annular body is communicated with the fixed round table, a through hole penetrates through the side wall of the annular body, and a clamping groove is annularly arranged on the outer wall of the annular body. When the physical vapor deposition equipment works, the annular body is only contacted with the wafer, so that the contact area of the pressing ring device and the wafer is reduced, and further, the occurrence of the sticking phenomenon is reduced.
Description
Technical Field
The utility model relates to the technical field of vapor deposition, in particular to physical vapor deposition equipment.
Background
The Physical Vapor Deposition (PVD) technology is the most widely used type of thin film manufacturing technology in the semiconductor industry, and generally refers to a thin film manufacturing process for manufacturing a thin film by using a physical method, and physical vapor deposition equipment, i.e., PVD equipment, is generally required in the manufacturing process.
At present, in the prior art, for example, chinese patent with publication number CN108950510a, a physical vapor deposition apparatus is disclosed, and after such a mechanism is adopted, the side coating of the substrate caused by the occurrence of a gap is thoroughly avoided, further the plating is avoided, the receiving ring is completely covered by the covering ring, and the surface forms a fused layer, further the receiving ring is prevented from being polluted. However, the physical vapor deposition process (such as aluminum deposition process) needs to be deposited with a thickness of 3-4 micrometers, and thicker deposition substances (such as aluminum) can fill the alignment marks of the wafer, so that the alignment marks of the wafer cannot be distinguished, and the subsequent processes such as photoetching cannot complete the normal process because of difficult alignment; in addition, the inner diameter of the annular body needs to be determined according to the size of the wafer, and the existing pressure ring device is inconvenient to adjust.
Disclosure of Invention
The main object of the present utility model is to provide a physical vapor deposition apparatus, which can solve the problems set forth in the background art. .
In order to achieve the above purpose, the physical vapor deposition device provided by the utility model comprises a deposition chamber, wherein a magnetic control chamber is arranged above the deposition chamber, the bottom end of the outer wall of the magnetic control chamber is fixedly connected with a target, a compression ring device is arranged below the connected target, and the compression ring device comprises:
the bottom of the fixed round table is fixedly connected to the bottom end of the inner wall of the sedimentation chamber;
the annular body is communicated with the fixed round table;
the through hole penetrates through the side wall of the annular body;
and the clamping groove is annularly arranged on the outer wall of the annular body.
Preferably, the bottom of fixed round platform is equipped with the recess that a plurality of rings set up, and adjacent two enclose the area that becomes between the recess and equal, the inner ring edge position fixedly connected with of annular body stretches out the board, stretch out the number of board and be four, adjacent two stretch out the arc length that forms between the board equals, and two are adjacent stretch out all be equipped with protruding platform between the board, wherein, protruding platform with stretch out the board all with the plane parallel of annular body, protruding platform's shape has reduced the area of contact of clamping ring device and wafer for trapezium structure, and then reduces the emergence of sticking phenomenon.
Preferably, a locking disc which is matched with the clamping groove is arranged in the clamping groove, a plurality of positioning locking holes are formed in the locking disc, the positioning locking holes are communicated with the through holes, and a positioning device is arranged on the positioning locking holes.
Preferably, the positioning device comprises a positioning pin, one end of the positioning pin is provided with a threaded hole, the threaded hole is matched with a bolt, one end of the bolt is inserted into the threaded hole, the other end of the bolt is fixed on an adjusting hand wheel, a graduated scale is arranged on the bolt, the rotating of the adjusting hand wheel can be utilized through the locking disc arranged on the annular body, the strip-shaped plate on the annular body can slide relatively with the groove, the diameter of the annular body can be adjusted, and the positioning device can adapt to the sizes of different wafers.
Preferably, the magnetic control chamber comprises an air inlet pipe, the air inlet pipe penetrates through the upper wall of the magnetic control chamber, the bottom end of the air inlet pipe is fixedly connected with the upper end of the connecting pipe, and the bottom end of the connecting pipe is fixedly connected with a magnet.
Preferably, a protection ring is arranged in the round table.
Preferably, the top end of the annular body is provided with a plurality of plates.
Advantageous effects
The utility model provides physical vapor deposition equipment. The beneficial effects are as follows:
(1) When the physical vapor deposition equipment works, the annular body is only contacted with the wafer, so that the contact area of the compression ring device and the wafer is reduced, and further, the sticking phenomenon is reduced, meanwhile, the position of the protruding plate corresponds to the alignment mark of the wafer, when the compression ring is pressed on the wafer, the protruding plate can be positioned above the alignment mark of the wafer, and the alignment mark of the wafer is blocked from being filled with deposition substances in the physical vapor deposition process, so that the problem that the wafer cannot be distinguished due to the deposition of the deposition substances in the physical vapor deposition process and the alignment mark of the wafer is avoided, and further, the normal alignment of the wafer in the subsequent photoetching process is protected; in addition, through the locking dish that sets up on annular body, can utilize the rotation of adjusting hand wheel, the strip shaped plate and the recess relative slip on the messenger annular body can adjust the diameter of annular body, can adapt to the size of different wafers, simple structure, and the effect is obvious.
(2) The magnetron cavity of the physical vapor deposition equipment is internally provided with magnets with opposite polarities, the magnets generate magnetic fields to restrict electrons, limit the movement range of the electrons, prolong the movement track of the electrons, and enable the electrons to be ionized into gas atoms in the deposition cavity to form ions of the gas, wherein the gas atoms comprise inert gas atoms.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic elevational view of the present utility model;
FIG. 2 is a schematic top view of the press ring device of the present utility model;
FIG. 3 is a schematic diagram of the front view of the annular body in the press ring device of the present utility model;
FIG. 4 is a schematic view of the bottom of the circular truncated cone in the pressure ring device according to the present utility model;
FIG. 5 is a schematic view of a positioning device according to the present utility model;
FIG. 6 is a schematic view of a locking disc structure in the pressure ring device of the present utility model.
Reference numerals illustrate:
1. a precipitation chamber; 11. a target material; 2. a magnetic control chamber; 21. an air inlet pipe; 22. a connecting pipe; 23. a magnet; 3. a compression ring device; 31. an annular body; 32. a through hole; 33. a clamping groove; 34. fixing the round table; 35. a protruding plate; 36. a protective ring; 37. a protruding stand; 38. a groove; 39. a strip-shaped plate; 310. locking the disc; 311. positioning and locking the hole; 4. a positioning device; 41. a positioning pin; 42. a threaded hole; 43. a bolt; 44. an adjusting hand wheel; 46. a graduated scale.
The achievement of the objects, functional features and advantages of the present utility model will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-6, the present utility model provides a physical vapor deposition apparatus, which includes a deposition chamber 1, and is characterized in that: the sedimentation chamber 1 top is equipped with magnetic control room 2, magnetic control room 2 outer wall bottom fixed connection target 11, be provided with clamping ring device 3 on connecting target 11 below, clamping ring device 3 includes fixed round platform 34 bottom fixed connection in sedimentation room 1 inner wall bottom, annular body 31 is linked together with fixed round platform 34, through-hole 32 runs through annular body 31's lateral wall, draw-in groove 33 annular setting is on annular body 31's outer wall, fixed round platform 34's bottom is equipped with the recess 38 of a plurality of annular settings, and the area that encloses between two adjacent recesses 38 equals, annular body 31's inner ring edge position fixedly connected with stretches out board 35, stretch out the number of board 35 and four, the arc length that forms between two adjacent stretches out the board 35 equals, and all be equipped with protruding platform 37 between two adjacent stretching out boards 35, wherein, protruding platform 37 and protruding board 35 all are parallel with annular body 31's plane, protruding platform 37's shape is trapezium structure has reduced clamping ring device 3 and wafer's contact area, and the phenomenon that the wafer takes place.
In the embodiment of the utility model, in order to be able to locate the wafer, specifically, the clamping groove 33 is provided with a locking plate 310 which is matched with the clamping groove, the locking plate 310 is provided with a plurality of locating locking holes 311, the locating locking holes 311 are communicated with the through holes 32, the locating locking holes 311 are provided with locating devices 4, the locating devices 4 comprise locating pins 41, one ends of the locating pins 41 are provided with threaded holes 42, the threaded holes 42 are matched with bolts 43, one ends of the bolts 43 are inserted into the threaded holes 42, the other ends of the bolts 43 are fixed on an adjusting hand wheel 44, and the bolts 43 are provided with graduated scales 46, by the locking plate 310 arranged on the annular body 31, the strip-shaped plate 39 of the annular body 31 can slide relatively to the grooves 38 by utilizing the rotation of the adjusting hand wheel 44, the diameter of the annular body 31 can be adjusted, the size of different wafers can be adapted, the magnetic control chamber 2 comprises an air inlet pipe 21, the air inlet pipe 21 penetrates through the upper wall of the magnetic control chamber 2, the bottom end of the air inlet pipe 21 is fixedly connected with the upper end of a connecting pipe 22, the bottom end of the connecting pipe 22 is fixedly connected with a magnet 23, the magnet 23 with opposite polarity generates a magnetic field to restrict electrons, limit the movement range of the electrons, prolong the movement track of the electrons, enable the maximum ionization of the electrons to enter gas atoms in a sedimentation chamber to form ions of the gas, the gas atoms comprise inert gas atoms, a protection ring 36 is arranged in a fixed round table 34, and a plurality of strip-shaped plates 39 are arranged at the top end of the annular body 31.
In the utility model, when in use, firstly, gas is discharged from the gas inlet pipe 21 into the magnetron chamber 2, the magnet 23 with opposite polarity is arranged, the magnet 23 generates a magnetic field to restrict the movement range of electrons, and prolongs the movement track of electrons, so that the electrons are ionized into gas atoms in the precipitation chamber to form ions of the gas, the gas atoms comprise inert gas atoms, nitrogen ions formed by ionization form titanium nitride on the surface of the target 11, the ionized nitrogen ions attract the bombarded target 11 by negative voltage applied on the target 11, impact the titanium nitride on the surface of the target 11, deposit on the compression ring device 3, further form a titanium nitride film on the ring body 31, and other gases are discharged through the gas discharge pipe, in addition, through the locking disc 310 arranged on the ring body 31, the rotation of the adjusting hand wheel 44 can be utilized to enable the strip-shaped plate 39 and the groove 38 on the ring body 31 to slide relatively, the diameter of the ring body 31 can be adjusted, and the sizes of different wafers can be adapted.
The foregoing description is only of the preferred embodiments of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structural changes made by the description of the present utility model and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the utility model.
Claims (7)
1. Physical vapor deposition apparatus comprising a deposition chamber (1), characterized in that: the sedimentation chamber (1) top is equipped with magnetic control room (2), magnetic control room (2) outer wall bottom fixed connection target (11), be provided with clamping ring device (3) on connecting target (11) below, clamping ring device (3) include:
the bottom of the fixed round table (34) is fixedly connected to the bottom end of the inner wall of the sedimentation chamber (1);
the annular body (31), the annular body (31) is communicated with the fixed round table (34);
-a through hole (32), said through hole (32) penetrating through a side wall of the annular body (31);
and the clamping groove (33), the clamping groove (33) is annularly arranged on the outer wall of the annular body (31).
2. A physical vapor deposition apparatus according to claim 1, wherein: the bottom of fixed round platform (34) is equipped with recess (38) that a plurality of rings set up, and adjacent two enclose the area that becomes between recess (38) equals, the inner ring edge position fixedly connected with of annular body (31) stretches out board (35), stretch out the number of board (35) and be four, adjacent two stretch out the arc length that forms between board (35) equals, and two are adjacent stretch out all be equipped with protruding platform (37) between board (35), wherein, protruding platform (37) with stretch out board (35) all with the plane parallel of annular body (31), the shape of protruding platform (37) is trapezium structure.
3. A physical vapor deposition apparatus according to claim 1, wherein: the clamping groove (33) is internally provided with a locking disc (310) which is matched with the clamping groove, the locking disc (310) is provided with a plurality of positioning locking holes (311), the positioning locking holes (311) are communicated with the through holes (32), and the positioning locking holes (311) are provided with positioning devices (4).
4. A physical vapor deposition apparatus according to claim 3, wherein: the positioning device (4) comprises a positioning pin (41), a threaded hole (42) is formed in one end of the positioning pin (41), a bolt (43) is matched with the threaded hole (42), one end of the bolt (43) is inserted into the threaded hole (42), the other end of the bolt (43) is fixed on an adjusting hand wheel (44), and a graduated scale (46) is arranged on the bolt (43).
5. A physical vapor deposition apparatus according to claim 1, wherein: the magnetic control room (2) comprises an air inlet pipe (21), the air inlet pipe (21) penetrates through the upper wall of the magnetic control room (2), the bottom end of the air inlet pipe (21) is fixedly connected with the upper end of a connecting pipe (22), and the bottom end of the connecting pipe (22) is fixedly connected with a magnet (23).
6. A physical vapor deposition apparatus according to claim 1, wherein: a protection ring (36) is arranged in the round table (34).
7. A physical vapor deposition apparatus according to claim 1, wherein: the top end of the annular body (31) is provided with a plurality of strip-shaped plates (39).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321686317.6U CN220132329U (en) | 2023-06-30 | 2023-06-30 | Physical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321686317.6U CN220132329U (en) | 2023-06-30 | 2023-06-30 | Physical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220132329U true CN220132329U (en) | 2023-12-05 |
Family
ID=88958460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321686317.6U Active CN220132329U (en) | 2023-06-30 | 2023-06-30 | Physical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220132329U (en) |
-
2023
- 2023-06-30 CN CN202321686317.6U patent/CN220132329U/en active Active
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