CN218812054U

CN218812054U - Novel silicon chip magnetron sputtering anchor clamps

Info

Publication number: CN218812054U
Application number: CN202223106659.4U
Authority: CN
Inventors: 殷敏; 周丹; 徐亚龙; 沈健
Original assignee: Suzhou Huaqinyuan Microelectronics Technology Co ltd
Current assignee: Suzhou Huaqinyuan Microelectronics Technology Co ltd
Priority date: 2022-11-22
Filing date: 2022-11-22
Publication date: 2023-04-07
Anticipated expiration: 2032-11-22

Abstract

The utility model discloses a novel silicon wafer magnetron sputtering clamp, which comprises a substrate and a silicon wafer, wherein the center of the substrate is provided with a hole; placing a silicon chip in the hole; the base plate is detachably connected with a fixing device; the fixing devices are arranged on two sides of the substrate and limit the position of the silicon wafer in the substrate. When the requirements of the metal film layers of the substrates are different, the sputtering requirements are met by dismounting or mounting the quartz glass sheet on the back; the clamp increases the barrier, reduces the stress received on the silicon wafer and reduces the breakage rate; the silicon chip is placed in the middle of the clamp, so that the uniformity of the sputtered metal film layer of the product is effectively improved; aiming at silicon wafers of different types and sizes, the universality is good by changing the shape and size of the pressed sheet for adaptation.

Description

Novel silicon chip magnetron sputtering anchor clamps

Technical Field

The utility model relates to a magnetron sputtering field, concretely relates to novel silicon chip magnetron sputtering anchor clamps.

Background

Magnetron sputtering is one kind of physical vapor deposition, and a common sputtering method can be used for preparing multiple materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large film coating area, strong adhesive force and the like. Incident particles undergo a complex scattering process in the target, collide with target atoms, imparting some momentum to the target atoms, which in turn collide with other target atoms, forming a cascade process in which some target atoms near the surface acquire sufficient momentum to move outward, exiting the target and be sputtered.

In the magnetron sputtering process of the silicon wafer, the silicon wafer needs to be fixed by using a clamp, the selection of the clamp is very important, and the unreasonable clamp can cause the thickness of a sputtered metal layer of the silicon wafer to be uneven; the traditional method aims at silicon wafers of different types and sizes, and different clamps need to be replaced, so that the cost investment is high, the feeding speed is low, and the efficiency is low; meanwhile, the situation that the substrate is broken and raw materials are wasted due to stress concentration generated in the sputtering process because the clamp is short of blocking exists.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model provides a novel silicon wafer magnetron sputtering fixture, which comprises a substrate and a silicon wafer, wherein the center of the substrate is provided with a hole; the silicon chip is placed in the hole; the base plate is detachably connected with a fixing device; the fixing devices are arranged on two sides of the substrate and limit the position of the silicon wafer in the substrate.

Preferably: the holes formed in the substrate are circular.

Preferably: the base plate is also provided with a plurality of screw holes.

Preferably, the following components: the fixing device comprises a pressing sheet, and the pressing sheet is arranged on the front face of the substrate.

Preferably: the pressing sheet is fixedly connected with the substrate through screws to limit the position of the silicon wafer.

Preferably: the shape of the pressing sheet is matched with that of the silicon wafer.

Preferably, the following components: the fixing device further comprises a back sheet, and the back sheet is arranged on the reverse side of the substrate.

Preferably: the back piece is matched with the hole formed in the base plate.

Preferably: the back piece is fixedly connected with the substrate through the screw, and blocking is added to the silicon wafer.

Preferably, the following components: the base plate is outwards extended and provided with a plurality of fixing plates.

The utility model discloses a technological effect and advantage:

the clamp increases the barrier, reduces the stress received on the silicon chip and reduces the breakage rate; the silicon chip is placed in the middle of the clamp, so that the uniformity of the sputtered metal film layer of the product is effectively improved; aiming at silicon wafers of different types and sizes, the universality is good by changing the shape and size of the pressed sheet for adaptation.

Drawings

Fig. 1 is a front structure view of a novel silicon wafer magnetron sputtering fixture provided in an embodiment of the present application;

FIG. 2 is a front internal structure view of a novel silicon wafer magnetron sputtering fixture provided in an embodiment of the present application;

FIG. 3 is a reverse structure view of a novel magnetron sputtering fixture for silicon wafers according to an embodiment of the present application;

fig. 4 is a reverse internal structure view of a novel silicon wafer magnetron sputtering fixture provided in an embodiment of the present application.

In the figure:

1. a substrate; 2. a fixing device; 201. tabletting; 202; a back sheet; 203. a screw; 3. and (3) a silicon wafer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and furthermore, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Please refer to fig. 1 to 4, a novel silicon magnetron sputtering fixture is provided in this embodiment, including substrate 1 and silicon wafer 3, the manufacturing material of substrate 1 is quartz glass, most of the existing materials are metals, after multiple times of sputtering, redundant metal layers are remained on the surface, the substrate is more easily damaged on the uneven surface, adhesion between the residual metal and the metal on the substrate can also occur, thereby causing defects, the quartz glass can not be accumulated with redundant metal layers, the redundant metal layers on the surface can be cleaned by the pickling solution, meanwhile, the temperature resistance of quartz glass is better, and the fixture can be applied to sputtering of products with higher temperature requirements.

The substrate 1 is of a square extended fixing plate structure and is fixedly connected with an external structure through an extended fixing plate, a hole is formed in the center of the substrate 1, and the silicon wafer 3 is placed in the hole; the front surface and the back surface of the substrate 1 are both provided with a plurality of screw holes and are both provided with fixing devices 2; in this embodiment, the holes are circular, have a diameter not greater than six inches, and have six screw holes on the front side and four screw holes on the back side.

The fixing device 2 comprises a pressing plate 201 and a back plate 201, wherein the pressing plate 201 and the back plate 201 are made of quartz glass materials; the shape of the pressing plate 201 is customized according to the silicon wafer 3, and can be rectangular, circular or other irregular shapes, and in the embodiment, a square shape is adopted; the pressing plate 20 is fixedly mounted on the front surface of the substrate 1 by six screws 203 to restrict the position of the silicon wafer 3.

The backplate 201 is circular and has a structure of extending the fixed plate, the circular structure is adapted to the round hole formed in the center of the substrate 1, the round hole of the substrate 1 is just embedded, the extending fixed plates are arranged in a plurality of numbers, in the embodiment, four extending fixed plates are adopted, screw holes are formed in the extending fixed plates, the extending fixed plates are fixedly arranged on the reverse side of the substrate 1 through four screws 203, and when single-side sputtering is carried out, blocking is increased, and the broken condition of a silicon wafer is reduced.

The utility model discloses a theory of operation is:

when the silicon wafer 3 only needs to be sputtered on one side, the back plate 201 on the reverse side can be fixed through the screw 203, then magnetron sputtering is carried out, and the situation of chip breaking caused by high-current bombardment and thin silicon wafers is reduced due to the fact that the glass sheet blocks the reverse side;

when the silicon wafer needs double-sided sputtering, the back plate 201 is removed to perform double-sided magnetron sputtering.

When the requirements of the metal film layers of the substrates are different, the sputtering requirements are adapted by dismounting or mounting the quartz glass sheet on the back; the clamp increases the barrier, reduces the stress received on the silicon chip and reduces the breakage rate; the silicon chip is placed in the middle of the clamp, so that the uniformity of the sputtered metal film layer of the product is effectively improved; aiming at silicon wafers with different types and sizes, the universality is good by changing the shape and the size of a tabletting and adapting.

It is to be understood that the disclosed embodiments are merely exemplary of the invention, and are not intended to limit the invention to the precise embodiments disclosed. Based on the embodiments in the present disclosure, all other embodiments obtained by a person of ordinary skill in the art and related fields without creative efforts shall fall within the protection scope of the present disclosure. The structures, devices, and methods of operation of the present invention, not specifically described and illustrated, are generally practiced by those of ordinary skill in the art without specific recitation or limitation.

Claims

1. A novel silicon wafer magnetron sputtering clamp comprises a substrate (1) and a silicon wafer (3), and is characterized in that the center of the substrate (1) is provided with a hole;

the silicon wafer (3) is placed in the hole;

the base plate (1) is detachably connected with a fixing device (2);

the fixing devices (2) are arranged on two sides of the substrate (1) and limit the position of the silicon wafer (3) in the substrate (1).

2. The novel silicon wafer magnetron sputtering fixture as claimed in claim 1, wherein the holes formed on the substrate (1) are circular.

3. The novel silicon wafer magnetron sputtering fixture according to claim 1, wherein a plurality of screw holes are further formed in the substrate (1).

4. The novel silicon wafer magnetron sputtering fixture as claimed in claim 1, wherein the fixing device (2) comprises a pressing sheet (201), and the pressing sheet (201) is arranged on the front surface of the substrate (1).

5. The novel silicon wafer magnetron sputtering fixture as claimed in claim 4, wherein the pressing plate (201) is fixedly connected with the substrate (1) through a screw (203) to limit the position of the silicon wafer (3).

6. The novel silicon wafer magnetron sputtering fixture as claimed in claim 5, wherein the shape of the pressing sheet (201) is matched with the shape of the silicon wafer (3).

7. The novel silicon wafer magnetron sputtering fixture as claimed in claim 5, wherein the fixing device (2) further comprises a back sheet (202), and the back sheet (202) is arranged on the reverse side of the substrate (1).

8. The novel silicon wafer magnetron sputtering fixture as claimed in claim 7, wherein the back sheet (202) is adapted to a hole formed in the substrate (1).

9. The novel silicon wafer magnetron sputtering fixture as claimed in claim 8, wherein the back piece (202) is fixedly connected with the substrate (1) through the screw (203) to add a barrier to the silicon wafer (3).

10. The novel silicon wafer magnetron sputtering fixture as claimed in claim 1, wherein the base plate (1) is designed with a plurality of fixing plates extending outwards.