CN208667840U

CN208667840U - Deposition ring and Pvd equipment for physical vapour deposition (PVD)

Info

Publication number: CN208667840U
Application number: CN201821396242.7U
Authority: CN
Inventors: 陈杰锋; 李理
Original assignee: SHENZHEN WANGXIN PLASTIC TECHNOLOGY PRODUCT Co Ltd
Current assignee: SHENZHEN WANGXIN PLASTIC TECHNOLOGY PRODUCT Co Ltd
Priority date: 2018-08-28
Filing date: 2018-08-28
Publication date: 2019-03-29
Anticipated expiration: 2028-08-28

Abstract

The utility model discloses the deposition rings and physical vapor deposition equipment for physical vapour deposition (PVD), including accepting ring and cover ring, there is concave station in annular on the inner surface for accepting ring, concave station is equipped with the first continuing surface for accepting substrate in the annular, the top for accepting ring is equipped with the second continuing surface for accepting the cover ring, first continuing surface is connected to second continuing surface by arcuate guide surface, the inside of the cover ring is equipped with the diminishing insert-connecting plate of thickness in downward direction, the insert-connecting plate is fitted closely close to the side of substrate and the edge of substrate.The utility model avoids causing the side plated film in substrate due to there is gap, further avoids around plating.Cover ring can be avoided by plated film in arcuate guide surface, and cause the deviation of interior concave station diameter dimension, and the coating bezel ring, of undertaking ring is completely covered and surface forms meltallizing layer, further prevent undertaking ring contaminated.

Description

Deposition ring and Pvd equipment for physical vapour deposition (PVD)

Technical field

The utility model relates to technical field of semiconductors, more particularly to a kind of deposition ring for physical vapour deposition (PVD) and Pvd equipment.

Background technique

The deposition for carrying out layer of substance on a special substrate has been widely applied to some fields, such as nano material system The manufacture of standby and semiconductor devices.Obtain the thin-film material of required performance, it is necessary to strictly observe deposition procedures.A kind of technology is wanted It carries out commercialization popularization and puts into mass production, reducing cost just becomes crucial.In the industrial production, it is produced into reduce This, the deposition that film is carried out in the online equipment of high production just has more advantage.

When carrying out technique film forming using existing PVD equipment, the side of substrate has film deposition, and the back side is as around plating And have film appearance, in the film that the side of substrate and the back side are formed, especially metal nitride films, because stress is larger, subsequent When wet-cleaning and mechanical polishing, it is easy to fall off to form particle by external force, causes the secondary pollution and surface scratching of substrate. Occur a kind of precipitation ring for physical vapor deposition currently on the market, to reduce substrate side and back plated film, still, Due to fault of construction, still cannot thoroughly solve the problems, such as.

Utility model content

The purpose of the utility model is to overcome shortcoming in the prior art, provide a kind of for physical vapour deposition (PVD) Deposition ring and and Pvd equipment, to solve the problems, such as above-mentioned background technique.

In order to solve the above technical problems, the utility model is solved by following technical proposals:

For the deposition ring of physical vapour deposition (PVD), including ring and cover ring are accepted, had on the inner surface for accepting ring Concave station in annular, concave station is equipped with the first continuing surface for accepting substrate in the annular, and the top for accepting ring, which is equipped with, to be used In the second continuing surface for accepting the cover ring, first continuing surface is connected to described second by arcuate guide surface and accepts The inside in face, the cover ring is equipped with the diminishing insert-connecting plate of thickness in downward direction, and the insert-connecting plate is close to the side of substrate It is fitted closely with the edge of substrate, the insert-connecting plate is fitted closely close to the side of arcuate guide surface with arcuate guide surface.

Further, it is described accept ring inner surface on annular in concave station quantity be it is multiple, it is the multiple annular in Concave station is sequentially connected, and the diameter of the first continuing surface in multiple annulars on concave station is gradually increased from the bottom to top.

Further, the insert-connecting plate is vertically arranged close to the face of the side of substrate.

Further, the angle of the arcuate guide surface and horizontal plane is 50 to 70 degree, the shape of the insert-connecting plate and institute The gap for stating arcuate guide surface and substrate edge formation is adapted.

Further, the holding tank that Open Side Down is formed in the cover ring, the holding tank and the undertaking ring limit Position cooperation.

Further, the outer surface of the cover ring is handled by meltallizing, is formed with the outer surface in the cover ring molten Penetrate layer.

Further, the internal diameter of the cover ring is identical as the outer diameter of the substrate.

The utility model additionally provides a kind of physical vapor deposition equipment, and the physical vapor deposition equipment has physics gas Mutually precipitating chamber is equipped with the deposition ring in the physical vapor deposition chamber.

The utility model have the following advantages that compared with prior art and the utility model has the advantages that

The deposition ring of the utility model includes accepting ring and cover ring, has annular indent on the inner surface for accepting ring Platform, concave station is equipped with the first continuing surface for accepting substrate in the annular, and the top for accepting ring is equipped with for accepting The second continuing surface of cover ring is stated, first continuing surface is connected to second continuing surface by arcuate guide surface, described to cover The inside of bezel ring, is equipped with the diminishing insert-connecting plate of thickness in downward direction, and the insert-connecting plate is close to the side of substrate and the side of substrate Edge fits closely, and the insert-connecting plate is fitted closely close to the side of arcuate guide surface with arcuate guide surface, using such mechanism Afterwards, insert-connecting plate is closely plugged between arcuate guide surface and substrate, thoroughly avoids causing due to there is gap in the side of substrate Side plated film, further avoids around plating.Accepting can be set the continuing surface that multiple diameters do not wait on ring, for adapting to different-diameter Substrate, cover ring can be avoided by plated film in arcuate guide surface, and cause the deviation of interior concave station diameter dimension, and it is coating to accept ring Bezel ring, is completely covered and surface forms meltallizing layer, has further prevented undertaking ring contaminated.

Detailed description of the invention

Utility model will be further described in detail below with reference to the attached drawings and specific embodiments.

Fig. 1 is a kind of structural schematic diagram of physical vapor deposition equipment.

Fig. 2 is the schematic diagram of the section structure of the deposition ring for physical vapour deposition (PVD).

Fig. 3 is the schematic diagram of the section structure of the deposition ring for physical vapour deposition (PVD).

Specific embodiment

The present invention will be further described in detail with reference to the embodiments and the accompanying drawings, but the implementation of the utility model Mode is without being limited thereto.

The specific implementation process of the utility model is as follows:

As shown in Figure 1 to Figure 2, for the deposition ring of physical vapour deposition (PVD), including ring 22 and cover ring 23 are accepted, it is described to hold Connecing has concave station in annular on the inner surface of ring 22, concave station is equipped with the first continuing surface for accepting substrate 30 in the annular 24, the top for accepting ring 22 is equipped with the second continuing surface 25 for accepting the cover ring 23, first continuing surface 24 Be connected to second continuing surface 25 by arcuate guide surface 221, the inside of the cover ring 23 be equipped in downward direction thickness by Tapered small insert-connecting plate 231, the insert-connecting plate 231 are fitted closely close to the side of substrate 30 and the edge of substrate 30, described to insert Contact pin 231 is fitted closely close to the side of arcuate guide surface with arcuate guide surface 221.

In the present embodiment, as shown in figure 3, concave station in multiple annulars, institute can be arranged on the inner surface for accepting ring It states concave station in multiple annulars to be sequentially connected, and the diameter of the first continuing surface in multiple annulars on concave station gradually increases from the bottom to top Greatly, such structure is used to install the substrate 30 of different-diameter, and the model of cover ring 23 is adapted with the model of substrate 30, arc The size in gap and insert-connecting plate between guide surface 221 and substrate 30 is adapted,

The face of side of the insert-connecting plate 231 close to substrate 30 is vertically arranged, and in the present embodiment, vertical plane 231 is set Meter can better stable substrate, prevent substrate from causing side plated film in length travel.

The angle of the arcuate guide surface 221 and horizontal plane is 50 to 70 degree, the shape of the insert-connecting plate 231 and the arc The gap that shape guide surface 221 and 30 edge of substrate are formed is adapted.

The holding tank that Open Side Down is formed in the cover ring 23, the holding tank is matched with the undertaking ring 22 limit It closes, the holding tank not only plays the role of stablizing and protect to undertaking ring 22, but also plays the work of orientation direction during installation With it is more convenient to make to install.

The outer surface of the cover ring 23 is handled by meltallizing, to form meltallizing layer in the outer surface of the cover ring 23.

The internal diameter of the cover ring 23 is identical as the outer diameter of the substrate 30.

The utility model also provides a kind of physical vapor deposition equipment 10, and the physical vapor deposition equipment 10 has physics Gaseous phase deposition chamber is equipped with the deposition ring in the physical vapor deposition chamber.

The working principle of the utility model are as follows: in the present embodiment, the precipitating chamber of the physical vapor deposition equipment 10 Top is provided with magnetron cavity 11, and the bottom of the precipitating chamber is equipped with support column, is equipped with pedestal 20, institute on the support column It states and accepts ring 22 and be installed on the pedestal 20, the top of pedestal 20 includes the target 13 being sputtered, and the material of target 13 can be with It is titanium, opposite polarity magnet 113 is provided in magnetron cavity 11, magnet 113 generates magnetic field bound electron, limits the fortune of electronics Dynamic range, and extend the motion profile of electronics, so that the ionization of electronics amplitude peak is entered the precipitating indoor gas atom of chamber, with shape At the ion of the gas, gas atom includes intert-gas atoms, and the Nitrogen ion that ionization is formed is formed on 13 surface of target and nitrogenized Titanium, the Nitrogen ion that ionization is formed are attracted bombardment target by the negative voltage applied on target, knock out the titanium nitride of target material surface, and It deposits on the substrate 30, and then forms titanium nitride film on the substrate 30.It accepts ring 22 and cover ring 23 is used for stable placement base Piece 30, cover ring 23 can cover entire undertaking ring 22 and fill the gap accepted between ring 22 and substrate 30, can not only keep away Exempt from the side and back side coating film in substrate 30, and it is contaminated and cause the influence installed to substrate and to holding to have exempted to accept ring 22 Connect the corrosion of ring, the surface of cover ring 23 is the even surface for being provided with meltallizing layer, prevent coating fall off and the formation of particle, keep away Exempt from the pollution to substrate 30.

Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by above-mentioned The limitation of embodiment, it is made under other any spiritual essence and principles without departing from the utility model to change, modify, replacing In generation, simplifies combination, should be equivalent substitute mode, is included within the protection scope of the utility model.

Claims

1. being used for the deposition ring of physical vapour deposition (PVD), it is characterised in that: including accepting ring and cover ring, the interior table for accepting ring There is concave station in annular, concave station is equipped with the first continuing surface for accepting substrate, the top for accepting ring in the annular on face Portion is equipped with the second continuing surface for accepting the cover ring, and first continuing surface is connected to described the by arcuate guide surface The inside of two continuing surfaces, the cover ring is equipped with the diminishing insert-connecting plate of thickness in downward direction, and the insert-connecting plate is close to substrate Side and the edge of substrate fit closely, the insert-connecting plate is closely pasted close to the side of arcuate guide surface with arcuate guide surface It closes.

2. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: the interior table for accepting ring The quantity of concave station is multiple in annular on face, and concave station is sequentially connected in the multiple annular, and in multiple annulars on concave station The diameter of first continuing surface is gradually increased from the bottom to top.

3. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: the insert-connecting plate is close to base The face of the side of piece is vertically arranged.

4. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: the arcuate guide surface with The angle of horizontal plane is 50 to 70 degree, the gap phase that the shape of the insert-connecting plate is formed with the arcuate guide surface and substrate edge Adaptation.

5. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: formed in the cover ring There is the holding tank that Open Side Down, the holding tank and undertaking ring limit cooperate.

6. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: the appearance of the cover ring Face is handled by meltallizing, to form meltallizing layer in the outer surface of the cover ring.

7. the deposition ring according to claim 1 for physical vapour deposition (PVD), it is characterised in that: the internal diameter of the cover ring It is identical as the outer diameter of the substrate.

8. a kind of physical vapor deposition equipment, it is characterised in that: the physical vapor deposition equipment has physical vapor deposition chamber Room is equipped with deposition ring as described in any one of claim 1 to 7 in the physical vapor deposition chamber.