WO2018205430A1

WO2018205430A1 - Magnetron sputtering cavity for through-silicon-via filling and semiconductor processing device

Info

Publication number: WO2018205430A1
Application number: PCT/CN2017/095587
Authority: WO
Inventors: 侯珏; 王厚工; 丁培军
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2017-05-10
Filing date: 2017-08-02
Publication date: 2018-11-15
Also published as: CN107068599B; TW201900912A; CN107068599A; TWI634224B

Abstract

A magnetron sputtering cavity for through-silicon-via filling and a semiconductor processing device. The magnetron sputtering cavity comprises a cavity, a target (2) provided at the top of the cavity, a magnetron (1) provided above the target (2), and a base (3) provided inside the cavity and located below the target (2); the area of a projection of the magnetron (1) on a plane where the target (2) is located is less than or equal to one fifth of the area of the target to improve the ionization rate of a dielectric gas so as to improve the filling rate for the through-silicon-via (41). The semiconductor processing device comprises the magnetron sputtering cavity. The magnetron sputtering cavity and the semiconductor processing device improve the filling rate of the through-silicon-via.

Description

Magnetron sputtering chamber and semiconductor processing equipment for through-silicon via filling

Technical field

The invention belongs to the field of semiconductor devices, and in particular to a magnetron sputtering chamber and a semiconductor processing device for through-silicon via filling.

Background technique

Physical Vapor Deposition (PVD) is a widely used method for depositing metal layers and related materials in integrated circuit manufacturing processes. At present, the application of Through Silicon Via (TSV) technology is more and more widely used. This technology greatly reduces the interconnection delay between chips and is a key technology for 3D integration implementation. The application of PVD in TSV is mainly to deposit a barrier layer and a copper seed layer inside the through-silicon via. The function of the barrier layer is to prevent copper from diffusing into silicon or silicon dioxide. The role of the copper seed layer is for the subsequent electroplating process. A layer of conductive layer, so the deposition of a barrier layer and a copper seed layer in the through-silicon via has high requirements for physical vapor deposition film coverage. The poor coverage of the barrier film will affect the reliability of the TSV device; the poor coverage of the copper seed layer may result in the inability to perform electroplating, or the TSV device after plating may have voids or gaps, which seriously affects device performance.

A typical DC magnetron sputtering apparatus is shown in FIGS. 1 and 2, the apparatus includes a susceptor 3 for carrying a wafer 4, and the susceptor 3 and the wafer 4 carried thereon are disposed opposite the target 2; The uniformity of the film and the area of the magnetron are designed. Generally, the projected area of the magnetron on the target 2 accounts for more than one-half of the area of the target 2; in order to increase the deposition rate of the film, the target The distance (distance between the target 2 and the wafer 4) is usually set to be less than 70 mm.

However, in the prior art, the following problems exist:

(1) Since the area of the magnetron is too large, the ionization rate of the dielectric gas is low, so that the filling rate of the through silicon via is slow;

(2) As shown in FIG. 2, the main corrosion region of the target 2 is close to the edge position of the target 2, and since the target base distance is too small, the angle at which the ions and atoms are incident on the through-silicon via 41 at the center of the wafer 4 is larger than the incident to The angle of the through silicon via 41 at the central portion of the wafer 4 causes a large difference in coverage between the center position of the wafer 4 and the edge position of the wafer 4, and the filling of the through silicon via is uneven.

In view of this, it is desirable to provide a magnetron sputtering chamber and a semiconductor processing apparatus that increase the through-silicon via fill rate and increase the uniformity of through-silicon via fill.

Summary of the invention

The present invention provides a magnetron sputtering chamber and a semiconductor processing apparatus for through-silicon via filling, which at least solves the problem of low deposition rate in the prior art for filling silicon vias.

According to an aspect of the present invention, a magnetron sputtering chamber for through-silicon via filling is provided, comprising: a cavity, a target disposed on a top of the cavity, and a device disposed above the target a magnetron, and a susceptor disposed inside the cavity and below the target, the projected area of the magnetron on the plane of the target being less than or equal to one-fifth of the target The area of the material.

Wherein the projected area of the magnetron on the plane of the target is less than one-fifth of the area of the target.

Wherein, the magnetron comprises an outer magnetic pole and an inner magnetic pole opposite in magnetic polarity, and the inner magnetic pole is surrounded by the outer magnetic pole.

Wherein, the outer magnetic pole has a long diameter and a short diameter, and the short diameter is less than or equal to one-half of a difference between a diameter of the inner chamber and a diameter of a wafer to be carried by the susceptor.

Wherein the magnetron sputtering chamber further includes a rotating mechanism, the rotating mechanism includes a rotating shaft, a first rotating arm and a second rotating arm; one end of the first rotating arm is fixedly connected with the rotating shaft, and One end is connected to one end of the second rotating arm, and the other end of the second rotating arm is fixedly connected to the magnetron; the first rotating arm and the second rotating arm have an angle; The rotating shaft drives the first rotating arm and the second rotating arm to rotate, thereby driving the magnetron to rotate.

Wherein the angle between the first rotating arm and the second rotating arm is adjustable, and the angle is a circumference of 0-180 degrees; when the included angle is 0 degrees, a projection of the magnetron on a plane of the target falls in a central area of the target; when the angle is 180 degrees The projection of the magnetron on the plane of the target falls on the edge region of the target.

Wherein, the magnetron sputtering chamber further includes a biasing unit that generates a negative bias on the base to attract positive ions to move vertically toward the base.

The biasing unit includes a radio frequency power source and a matching device, wherein the radio frequency power source is connected to the base through the matching device; the power of the radio frequency power source ranges from 800 to 1400 W.

Wherein, the vertical distance between the target and the base is 100-150 mm.

In another aspect, the present invention also provides a semiconductor processing apparatus comprising the magnetron sputtering chamber for through silicon via filling described in any of the above aspects.

Beneficial effects:

The present invention provides a magnetron sputtering chamber for through-silicon via filling. The projected area of the magnetron on the target is less than or equal to one-fifth of the target area, which is relative to the prior art magnetron. Compared with the case where the projected area on the target is generally greater than or equal to one-half of the target area, the present invention can increase the ionization rate of the dielectric gas (such as argon) in the case where the loaded power is the same. Thereby, the filling rate of the through silicon vias is effectively increased, and the film coverage is further improved.

According to the semiconductor device of the present invention, the magnetron sputtering chamber for through-silicon via filling of the present invention is employed, and the filling rate of the through-silicon via holes can be increased, and the film coverage can be further improved.

DRAWINGS

1 is a schematic structural view of a magnetron sputtering chamber for through-silicon via filling in the prior art;

2 is a schematic view showing an incident angle of a plasma when a through-silicon via is filled in a magnetron sputtering chamber for through-silicon via filling in the prior art;

3 is a schematic diagram of a magnetron sputtering chamber for through silicon via filling in accordance with an embodiment of the present invention;

4 is a schematic diagram of a magnetron sputtering chamber for through silicon via filling in accordance with an embodiment of the present invention;

5 is a schematic diagram of a magnetron sputtering chamber for through silicon via filling in accordance with an embodiment of the present invention;

6 is a schematic view showing an incident angle of positive ions when filling a through silicon via according to the embodiment shown in FIG. 5;

Reference mark:

1-magnetron; 2-target; 3-base; 4-wafer; 41-silicon via; 5-rotating mechanism; 51-rotating shaft; 52-first rotating arm; 53-second rotating arm; 6-bias unit.

detailed description

The invention will now be described in detail in conjunction with the drawings and embodiments. It is to be noted that the following examples are merely illustrative of the invention and are not intended to limit the scope of the invention.

It is noted that like numerals and letters indicate similar items in the following figures, and therefore, once an item is defined in a drawing, it is not required to be further discussed in the subsequent figures.

Example 1

The present embodiment provides a magnetron sputtering chamber for through-silicon via filling, comprising: a cavity, a target disposed on the top of the cavity, a magnetron disposed above the target, and a cavity Internal and located below the target, the projected area of the magnetron on the target is less than or equal to one-fifth of the target area to increase the ionization rate of the dielectric gas, thereby increasing the filling of the through-silicon via. rate.

In the prior art, the projected area of the magnetron on the plane of the target is generally one-half of the area of the target, and the magnetron sputtering chamber provided by the present invention uses a magnetron in the plane of the target. The area of the projection above is less than or equal to one-fifth of the area of the target. Compared with the prior art, under the same power conditions, the magnetron sputtering chamber provided by the invention can increase the power density per unit area, thereby greatly increasing the ionization rate of the medium gas, that is, generating more Ions, which can improve the through silicon via The fill rate.

Wherein, the projected area of the magnetron on the plane of the target is preferably less than one-fifth of the area of the target, and the projected area of the magnetron on the plane of the target is less than fifteenth of the area of the target. At one time, under the same power conditions, the power density per unit area is higher, and the ionization rate of the dielectric gas is correspondingly higher, so the filling rate of the through silicon vias is also higher.

Example 2

The magnetron in this embodiment includes an outer magnetic pole and an inner magnetic pole which are opposite in magnetic polarity, and the inner magnetic pole is surrounded by the outer magnetic pole. The other settings in this embodiment are the same as those in the first embodiment, and are not described herein.

Preferably, as shown in FIG. 3, the magnetron 1 in the magnetron sputtering chamber of the present embodiment includes magnetically opposite outer and inner magnetic poles, the inner magnetic pole is surrounded by the outer magnetic pole, and the magnetron 1 is kidney-shaped. It can provide a higher ionization rate of the medium gas. In addition, the outer magnetic pole of the magnetron 1 may be circular, rectangular or elliptical. Wherein, the outer magnetic pole has a long diameter L and a short diameter D, and the short diameter D is preferably less than or equal to one-half of the difference between the inner diameter of the chamber and the diameter of the wafer 4 to be carried by the susceptor 3, that is, the short diameter during the process. D is less than or equal to the difference between the radius of the inner diameter of the chamber and the radius of the wafer 4. When the short diameter D of the magnetron 1 is less than or equal to the difference between the chamber and the radius of the wafer 4, the projection of the magnetron 1 on the plane of the wafer 4 is between the projection of the wafer 4 and the chamber wall on the plane, That is, for the plane in which the wafer 4 is located, the projection of the magnetron 1 is located in the outer region of the wafer 4 (hereinafter referred to as the magnetron 1 in the outer region of the wafer 4), by which the magnetron 1 is disposed, and The projection of the movement trajectory of the magnetron 1 on the plane of the wafer 4 falls on the outer region of the wafer 4, so that a part of the escaped target atoms and ions are deposited on the edge region of the wafer 4, and a part is floated to the center of the wafer 4. The region is deposited in the central region of the wafer 4, thereby adjusting the uniformity of deposition of the edge region of the wafer 4 and its central region.

The minimum value of the short diameter D and the long diameter L of the magnetron is conditioned on the condition that the medium gas can be stably maintained in the plasma state. If the size is too small, the magnetic field may be weakened, and the medium gas may not be maintained in the plasma state.

Example 3

The magnetron sputtering chamber in this embodiment further includes the rotating mechanism shown in FIG. The other settings in this embodiment are the same as those in the second embodiment, and are not described herein.

As shown in FIG. 4, the rotating mechanism 5 in this embodiment includes a rotating shaft 51, a first rotating arm 52, and a second rotating arm 53. One end of the first rotating arm 52 is fixedly connected to the rotating shaft 51, and the other end is second. One end of the rotating arm 53 is connected, the other end of the second rotating arm 53 is fixedly connected with the magnetron 1; the first rotating arm 52 has an angle with the second rotating arm 53; the rotating shaft 51 drives the first rotating arm 52 and The second rotating arm 53 rotates to drive the magnetron 1 to rotate.

The connection between the first rotating arm 52 and the second rotating arm 53 may be a fixed connection or an active connection. When a fixed connection is employed, the angle between the first rotating arm 52 and the second rotating arm 53 is not adjustable; when the movable connection is employed, the angle between the first rotating arm 52 and the second rotating arm 53 is adjustable, that is, The angle can be adjusted according to the process requirements, and after the first rotating arm 52 and the second rotating arm 53 are fixed, the rotating shaft 51 is rotated, so that the first rotating arm 52 and the second rotating arm 53 drive the magnetron. 1 rotation.

Wherein, in the case where the angle between the first rotating arm 52 and the second rotating arm 53 is adjustable, the angle ranges from 0 to 180 degrees. When the angle is 0 degree, the magnetron 1 is projected in the central area of the target 2, that is, the projection of the magnetron 1 on the plane of the target 2 falls in the central area of the target 2; when the angle is 180 At the time, the magnetron 1 is projected on the edge region of the target 2, that is, the projection of the magnetron 1 on the plane of the target 2 falls on the edge region of the target 2.

Wherein, in the case where the angle between the first rotating arm 52 and the second rotating arm 53 is adjustable, the selection of the angle between the first rotating arm 52 and the second rotating arm 53 and the through hole of the wafer 4 The main fill position corresponds. That is, the angle between the first rotating arm 52 and the second rotating arm 53 is set in accordance with the main filling position of the wafer 4. When the angle is 0 degree, the projection of the magnetron 1 on the plane of the target 2 falls on the central region of the target 2, at which time the through-silicon vias of the central region of the wafer 4 are mainly filled; At 180 degrees, the projection of the magnetron 1 on the plane of the target 2 falls on the edge region of the target 2, at which time the edge region of the wafer 4 is mainly filled; according to the filling condition, the first rotating arm can be adjusted in time. An angle between 52 and the second rotating arm 53, thereby adjusting the magnetron 1 at the target The projection position on 2, thereby changing the main filling position of the wafer 4, makes the filling of the through-silicon vias more uniform. The so-called main filling position refers to the position where most of the ions and atoms are deposited when the through silicon via is filled.

Example 4

The magnetron sputtering chamber in this embodiment further includes a biasing unit. As for other settings, the same as the setting of Embodiment 3, and details are not described herein.

As shown in FIG. 5, the magnetron sputtering chamber of the present embodiment includes a biasing unit 6 that generates a negative bias on the susceptor 2 to attract positively charged ions into the silicon pass of the wafer 4 vertically. The bottom of the hole, so that the uniformity of the through-silicon via filling can be improved.

As shown in FIG. 6, since the biasing unit 6 is disposed in the magnetron sputtering chamber of the embodiment, the positive ions generated by the process gas ionization will be close to zero under the action of the biasing unit 6. The angle of incidence is perpendicular to the through silicon via, as indicated by the arrows in FIG. The positive ions are vertically filled into the through silicon vias, which not only improves the filling rate, but also improves the uniformity of filling.

In the present embodiment, the area of the magnetron 1 is reduced by making the volume of the magnetron 1 projected on the plane of the target 2 less than or equal to one fifth of the area of the target 2, thereby increasing the ionization of the medium gas. Rate, increasing the amount of positive ions in the plasma. Further, by providing the biasing unit 6, the positive ions can be vertically filled to the through-silicon vias at an incident angle close to zero, thereby improving the uniformity of filling, and effectively solving the problems existing in the prior art, that is, positive The incident angle of ions at the edge portion of the wafer is close to 0 degrees, and the incident angle at the central portion is large, causing a problem of uneven filling of the through-silicon via holes in the central portion of the wafer and the through-hole filling of the edge portions.

Wherein, the biasing unit preferably includes a radio frequency power source and a matching device, and the radio frequency power source is connected to the base through the matching device. The power range of the radio frequency power source is preferably 800-1400 W, further preferably 1000-1300 W, and still more preferably 1100 W, 1200 W, and 1250 W. The reason why the power range of the RF power source is preferably set to 800-1400 W is that when the RF power range is less than 800 W, the bias generated on the susceptor is difficult to attract positive ions into the through silicon vias of the wafer; when the RF power is greater than 1400 W At this time, the bias generated on the pedestal is too large, so that the positive ions move too fast and deposit to silicon. The energy at the bottom of the through hole 41 is strong, which causes excessive bombardment, that is, the original deposited layer at the bottom of the thin through silicon via 41 is thinned, and even the deposited layer at the bottom is completely sputtered onto the sidewall, reducing deposition. Uniformity.

When the power range of the RF power source is maintained between 800 and 1400 W, on the one hand, it generates an appropriate negative bias on the pedestal 3, increasing the kinetic energy of the positive ions to some extent, and accelerating the positive ions to the wafer 4. The acceleration of the movement increases the filling rate; on the other hand, the ions maintain proper kinetic energy, and when the bottom surface of the through silicon via 41 is bombarded, a part of the film previously deposited on the bottom of the through silicon via 41 is sputtered out to the through silicon via 41. The position of the corner of the side wall increases the coverage of the bottom of the through-silicon via and the corner of the sidewall, so that the thickness of the bottom of the through-silicon via 41 and the corner of the sidewall are relatively uniform.

Example 5

In the magnetron sputtering chamber of the present embodiment, the vertical distance between the target 2 and the susceptor 3 is 100-150 mm. The other settings in this embodiment are the same as those in the embodiment 4, and are not described herein.

According to the magnetron sputtering chamber of the present embodiment, the target is projected on the basis of the area where the projection of the magnetron on the plane of the target is less than or equal to one-fifth of the area of the target and the bias unit is disposed. The vertical distance between the material and the base is set to 100-150 mm. The vertical distance between the target and the pedestal is set to 100-150 mm, which is larger than 70 mm in the prior art, that is, the target base distance is increased, which makes the positive filling into the through-silicon via at a small incident angle. The increase in ions, especially the positive ions that are vertically filled into the through-silicon vias, increases the film coverage and the utilization of the target.

The magnetron sputtering chambers for silicon via filling provided by Embodiments 1 to 5 of the present invention all increase the filling rate of the through silicon vias, and can even further improve the filling uniformity of the through silicon vias.

Example 6

The present embodiment provides a semiconductor processing apparatus. The semiconductor processing apparatus in this embodiment may include any one of Embodiments 1-5 for a magnetron sputtering chamber for through-silicon via filling.

Of course, in the semiconductor device of the present invention, other magnetron sputtering chambers formed by any arrangement and combination in the claims may be included.

The semiconductor processing apparatus in this embodiment adopts the magnetron sputtering chamber of the present invention, can improve the filling rate of the through silicon via filling, and can even further improve the filling uniformity of the through silicon via.

In summary, in the magnetron sputtering chamber and the semiconductor device for through-silicon via filling of the present invention, the projected area of the magnetron on the plane of the target is set to be smaller than or equal to the target area. One-fifth of the set, the biasing unit connected to the base, and/or the target base distance is between 100mm and 150mm. When filling the through-silicon via, these three factors can be combined with each other. Complementing each other, the filling rate of the through silicon vias can be increased to a greater extent, and the filling uniformity of the through silicon vias can be further improved.

In order to prove that the magnetron sputtering chamber of the present invention has an effect of increasing the filling rate and the filling uniformity when filling the through silicon via, the following description will be made by way of comparative examples and comparative examples.

In the comparative examples and examples described below, the magnetron sputtering chamber used had a cavity radius of 222.5 mm and a pedestal radius of 150 mm. The wafer is a 12-inch wafer (300 mm in diameter) and the target diameter is 450 mm (target area is 158962.5 mm ² ).

At the same time, for comparison, the magnetron is selected in three sizes, which can be respectively labeled as magnetron a (for comparative example), magnetron b (for embodiment), and magnetron c (for embodiment). Wherein, the projected area of the magnetron a on the plane of the target is 1/2 of the target area, that is, 79481.25 mm ² ; the projected area of the magnetron b on the plane of the target is 1 of the target area /5, ie 31792.5 mm ² ; the projected area of the magnetron c on the plane of the target is 1/15 of the target area, ie 10597.5 mm ² , preferably, the magnetron c is on the plane of the target The area of the projection is less than 1/15 of the area of the target. For example, the magnetron c has a kidney-shaped structure, and the short diameter D is less than or equal to 75 mm, and the long diameter L is less than or equal to 140 mm.

The test results of the present invention are characterized by three parameters of film coverage, film uniformity, and productivity.

Wherein, the film coverage is calculated as 100%*T _b /T _f , T _b is the thickness of the bottom film of the through silicon via, and T _f is the thickness of the surface film of the wafer. The larger the value of the film coverage, the thicker the film deposited on the bottom of the through silicon via.

Film uniformity is defined as the uniformity of the thickness distribution of the surface film of the wafer, using professional metal Film thickness measuring equipment is used for testing, commonly used by Rudolph's MetaPULSE. Film thickness uniformity is usually measured by selecting a uniform number of (usually 49) points uniformly distributed on the wafer and measuring the film thickness at these points. The average film thickness at these points is recorded as AVG, and the variance is recorded as STDEV, then the calculation formula of the film uniformity U is U=100%*STDEV/AVG, and the smaller the value of U, the more uniform the film distribution.

The production capacity is defined as the number of wafers produced by the equipment per unit time, which is generally the number of wafers produced by the equipment per hour. In this test, the number of wafers produced by the equipment per hour is also used. it is good.

The applicant tested the performance of the wafer. The specific test conditions and test results are shown in Table 1:

Table 1

Comparing the data of Example 1, Example 2 and Comparative Example 1 in Table 1, it can be seen that when the area of the projection of the magnetron on the plane of the target is less than or equal to one-fifth of the area of the target. At the same time, the film coverage is relatively highest, which indicates that in these three examples, when the area of the projection of the magnetron on the plane of the target is less than or equal to one-fifth of the area of the target, the filling rate of the through-silicon via is relatively highest. .

Comparing Example 3 in Table 1 with Example 1, it can be seen that in the case where the area of the projection of the magnetron on the plane of the target is kept to be less than or equal to one-fifth of the area of the target, After the bias unit is provided, the coverage of the film and the uniformity of the film can be further improved. The biasing unit can further increase the filling rate and filling uniformity of the through silicon via.

Comparing Example 4 and Example 2 in Table 1, it can be seen that in the case where the area of the projection of the magnetron on the plane of the target is kept to be less than or equal to one-fifth of the area of the target. After the bias unit is disposed, the coverage of the film and the uniformity of the film are further improved, which means that the setting of the biasing unit can further improve the filling rate and filling uniformity of the through-silicon via.

According to the analysis of the data in Table 1, it can be seen that in the comparative example and the respective embodiments, the smaller the area of projection of the magnetron on the plane of the target, the smaller the capacity and other conditions, The more the ionization rate of the dielectric gas can be increased, the number of positive ions after magnetron sputtering is increased, and the filling rate is increased. Further, in the case where the area of the projection of the magnetron on the plane of the target is kept to be less than or equal to one-fifth of the area of the target, the bias unit is further disposed, so that the generated positive ions are close to vertical. The angle is incident into the through silicon vias, thereby increasing the fill rate of the through silicon vias and improving fill uniformity.

While the invention has been described in detail, the preferred embodiments of the invention It will be appreciated by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims

A magnetron sputtering chamber for through-silicon via filling, comprising: a cavity, a target disposed on a top of the cavity, a magnetron disposed above the target, and a cavity disposed in the cavity a pedestal inside the body and below the target, characterized in that

The projected area of the magnetron on the plane of the target is less than or equal to one-fifth of the area of the target.
The magnetron sputtering chamber of claim 1 wherein the projected area of the magnetron on the plane of the target is less than one-fifth of the area of the target.
The magnetron sputtering chamber of claim 1 wherein said magnetron comprises an outer magnetic pole and an inner magnetic pole that are opposite in magnetic polarity, said inner magnetic pole being surrounded by said outer magnetic pole.
The magnetron sputtering chamber according to claim 3, wherein said outer magnetic pole has a long diameter and a short diameter, said short diameter being less than or equal to said inner diameter of said chamber and said wafer to be carried by said susceptor The difference in diameter is one-half.
A magnetron sputtering chamber according to any one of claims 1 to 4, further comprising a rotating mechanism, wherein said rotating mechanism comprises a rotating shaft, a first rotating arm and a second rotating arm;

One end of the first rotating arm is fixedly connected to the rotating shaft, the other end is connected to one end of the second rotating arm, and the other end of the second rotating arm is fixedly connected to the magnetron;

An angle between the first rotating arm and the second rotating arm;

The rotating shaft drives the first rotating arm and the second rotating arm to rotate, thereby driving the magnetron to rotate.
The magnetron sputtering chamber of claim 5 wherein said first rotating arm An angle between the second rotating arm and the second rotating arm is adjustable, the angle is in the range of 0-180 degrees;

When the angle is 0 degrees, a projection of the magnetron on a plane of the target falls in a central region of the target;

When the included angle is 180 degrees, the projection of the magnetron on the plane of the target falls on the edge region of the target.
A magnetron sputtering chamber according to claim 1 wherein said magnetron sputtering chamber further comprises a biasing unit that produces a negative bias on said base to attract Positive ions move vertically in the direction of the susceptor.
A magnetron sputtering chamber according to claim 7 wherein said biasing unit comprises a radio frequency power source and a matcher, wherein said radio frequency power source is coupled to said base via said matcher; The power range of the RF power supply is 800-1400W.
The magnetron sputtering chamber of claim 1 wherein the vertical distance between the target and the base is between 100 and 150 mm.
A semiconductor processing apparatus comprising the magnetron sputtering chamber for through silicon via filling according to any one of claims 1-9.