CN107068599B - Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment - Google Patents

Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment Download PDF

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CN107068599B
CN107068599B CN201710327078.8A CN201710327078A CN107068599B CN 107068599 B CN107068599 B CN 107068599B CN 201710327078 A CN201710327078 A CN 201710327078A CN 107068599 B CN107068599 B CN 107068599B
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magnetron
target
rotating arm
magnetron sputtering
sputtering chamber
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CN107068599A (en
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侯珏
王厚工
丁培军
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to PCT/CN2017/095587 priority patent/WO2018205430A1/en
Priority to TW106126393A priority patent/TWI634224B/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

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Abstract

The invention discloses a magnetron sputtering chamber for filling through silicon vias and semiconductor processing equipment. The magnetron sputtering chamber comprises a cavity, a target arranged at the top of the cavity, a magnetron arranged above the target and a base arranged in the cavity and positioned below the target, wherein the projection area of the magnetron on the target is less than one fifth of the area of the target so as to improve the ionization rate of medium gas and further improve the filling rate of through silicon vias. A semiconductor processing apparatus according to the present invention includes a magnetron sputtering chamber of the present invention. The magnetron sputtering chamber and the semiconductor processing equipment both improve the filling rate of the through silicon via.

Description

Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment
Technical Field
The invention belongs to the field of semiconductor equipment, and particularly relates to a magnetron sputtering chamber for filling a through silicon via and semiconductor processing equipment.
Background
Physical Vapor Deposition (PVD) is a widely used method for depositing metal layers and related materials in integrated circuit fabrication. At present, Through Silicon Via (Through Silicon Via) technology is more and more widely applied, which greatly reduces interconnection delay between chips and is a key technology for realizing three-dimensional integration. The application of PVD in TSV is mainly to deposit a barrier layer and a copper seed layer inside the through silicon via, the barrier layer is used for preventing copper from diffusing into silicon or silicon dioxide, and the copper seed layer is used for making a conductive layer for a subsequent electroplating process, so that the barrier layer and the copper seed layer deposited in the through silicon via have high requirements for the film coverage rate of physical vapor deposition. The reliability of the TSV device is affected due to the fact that the film coverage rate of the barrier layer is poor; poor coverage of the seed layer may cause that electroplating cannot be performed, or the plated TSV has voids or gaps, which seriously affects the device performance.
A typical dc magnetron sputtering apparatus is shown in fig. 1, and the apparatus includes a base 3 for carrying a wafer 4, the base 3 and the wafer 4 placed on the base 3 are disposed opposite to the target 2; in order to ensure the uniformity of the film, the area of the magnetron is designed to be larger, and the projection area of the magnetron on the target generally occupies more than one half of the area of the target; in order to increase the deposition rate of the thin film, the target base distance is generally set to less than 70 mm.
However, in the prior art, the following problems exist:
(1) the ionization rate of the medium gas is lower due to the too large area of the magnetron, so that the filling rate of the through silicon via is lower;
(2) as shown in fig. 2, the main erosion area of the target 2 is close to the edge of the target, and since the target base distance is too small, the angle at which ions and atoms are incident on the through-silicon via 41 in the center of the wafer 41 is larger than the angle at which ions and atoms are incident on the through-silicon via 41 in the center of the wafer 4, which results in a large difference in coverage between the center of the wafer and the edge of the wafer, and uneven filling of the through-silicon via.
In view of the above, it is desirable to provide a magnetron sputtering chamber and a semiconductor processing apparatus that improve the filling rate and uniformity of through silicon vias.
Disclosure of Invention
The invention provides a magnetron sputtering chamber for filling a through silicon via and semiconductor processing equipment, which at least solve the problem of low deposition rate in the process of filling the through silicon via in the prior art.
According to an aspect of the present invention, there is provided a magnetron sputtering chamber for through silicon via filling, comprising: the magnetron sputtering device comprises a cavity, a target arranged at the top of the cavity, a magnetron arranged above the target and a base arranged in the cavity and positioned below the target, wherein the projection area of the magnetron on the target is less than one fifth of the area of the target so as to improve the ionization rate of medium gas and the filling rate of through silicon vias.
Optionally, in the magnetron sputtering chamber according to the present invention, a projected area of the magnetron on the target is less than one fiftieth of an area of the target.
Optionally, in a magnetron sputtering chamber according to the invention, the magnetron comprises outer and inner magnetic poles of opposite magnetic polarity, the inner magnetic pole being surrounded by the outer magnetic pole.
Optionally, in a magnetron sputtering chamber according to the invention, the outer pole has a major diameter and a minor diameter, the minor diameter being less than or equal to one half of the difference between the inner diameter of the chamber and the diameter of the wafer.
Optionally, the magnetron sputtering chamber according to the present invention further includes a rotating mechanism, wherein the rotating mechanism includes a rotating shaft, a first rotating arm and a second rotating arm;
one end of the first rotating arm is fixedly connected with the rotating shaft, the other end of the first rotating arm is connected with one end of the second rotating arm, and the other end of the second rotating arm is fixedly connected with the magnetron;
an included angle is formed between the first rotating arm and the second rotating arm;
the rotating shaft drives the first rotating arm and the second rotating arm to rotate, so that the magnetron is driven to rotate.
Optionally, according to the magnetron sputtering chamber of the present invention, an included angle between the first rotating arm and the second rotating arm is adjustable, and the included angle ranges from 0 to 180 degrees;
when the included angle is 0 degree, the magnetron projects on the central area of the target material;
when the included angle is 180 degrees, the magnetron projects on the edge area of the target.
Optionally, according to the magnetron sputtering chamber of the present invention, the magnetron sputtering chamber further comprises a bias unit generating a negative bias on the pedestal to attract the positively charged ions vertically into the bottom of the through-silicon via of the wafer.
Optionally, according to the magnetron sputtering chamber of the present invention, the bias unit includes a radio frequency power supply and a matcher, wherein the radio frequency power supply is connected to the base through the matcher; the power range of the radio frequency power supply is 800-1400W.
Optionally, according to the magnetron sputtering chamber of the present invention, the vertical distance between the target and the base is 100-150 mm.
According to another aspect of the invention, a semiconductor processing device is also provided, which comprises the magnetron sputtering chamber for filling the through silicon via.
Has the advantages that:
according to the magnetron sputtering chamber for filling the through silicon vias, the projection area of the magnetron on the target is less than one fifth of the area of the target; in the magnetron sputtering chamber for filling the through silicon via in the prior art, the projection area of the magnetron on the target is generally more than or equal to one half of the area of the target; the magnetron is adopted, the projection area of the magnetron on the target is less than one fifth of the area of the target, and the ionization rate of medium gas (such as argon) can be improved under the condition that the loaded power of the magnetron and the target is the same, so that the filling rate of the silicon through hole is effectively improved, and the film coverage rate is further improved.
According to the semiconductor device provided by the invention, the magnetron sputtering chamber for filling the through silicon via is adopted, and the filling rate of the through silicon via is also improved.
Drawings
FIG. 1 is a schematic structural diagram of a magnetron sputtering chamber for filling a through silicon via in the prior art;
FIG. 2 is a schematic view of an incident angle of a plasma when a magnetron sputtering chamber for filling a through silicon via fills the through silicon via in the prior art;
FIG. 3 is a schematic diagram of a magnetron sputtering chamber for through silicon via filling in accordance with one embodiment of the invention;
FIG. 4 is a schematic diagram of a magnetron sputtering chamber for through silicon via filling in accordance with one embodiment of the present invention;
FIG. 5 is a schematic view of a magnetron sputtering chamber for through silicon via filling in accordance with one embodiment of the invention;
FIG. 6 is a schematic diagram illustrating the incident angle of positive ions during filling of the through silicon via according to the embodiment shown in FIG. 5;
reference numerals:
1-a magnetron; 2-a target material; 3-a base; 4-a wafer; 41-through silicon vias; 5-a rotating mechanism; 51-a rotation axis; 52-a first rotating arm; 53-a second rotating arm; 6-bias unit.
Detailed Description
The invention will now be described in detail with reference to the drawings and examples. It should be noted that the following examples are only illustrative of the present invention and do not limit the scope of the present invention.
It is noted that like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion of it is not necessary in subsequent figures.
Example 1
The embodiment provides a magnetron sputtering chamber for through silicon via filling, which comprises: the cavity, set up in the target at cavity top, set up in the magnetron of target top and set up in the cavity inside and be located the base of target below, the projection area of magnetron on the target is less than one fifth of target area to improve the ionization rate of medium gas, thereby improve the filling rate to the through-silicon via.
In the prior art, the projection area of the magnetron on the target is generally one half of the area of the target, while the projection area of the magnetron on the target adopted by the magnetron sputtering chamber provided by the invention is less than one fifth of the area of the target. Under the same power condition, the ionization rate of the medium gas can be improved, and therefore the filling rate of the through silicon via is improved.
The projection area of the magnetron on the target is preferably less than one-fifteenth of the area of the target, and when the projection area of the magnetron on the target is less than one-fifteenth of the area of the target, the ionization rate of the medium gas is higher, so that the filling rate of the through silicon via is higher.
Example 2
Other settings in this embodiment are the same as those in embodiment 1, and are not described herein. The magnetron is different in that the magnetron comprises an outer magnetic pole and an inner magnetic pole which are opposite in magnetism, and the inner magnetic pole is surrounded by the outer magnetic pole.
The magnetron in the magnetron sputtering chamber of the invention comprises an outer magnetic pole and an inner magnetic pole which are opposite in magnetism, the inner magnetic pole is surrounded by the outer magnetic pole, and further the kidney-shaped magnetron 1 shown in figure 3 is preferred, and the magnetron can better ionize the medium gas. In addition, the outer pole of the magnetron 1 may be circular, rectangular or elliptical. Wherein the outer pole has a major diameter L and a minor diameter D, the minor diameter D preferably being less than or equal to one-half of the difference between the chamber inner diameter and the diameter of the wafer 4, i.e. the minor diameter D is less than or equal to the difference between the radius of the chamber inner diameter and the radius of the wafer 4. When the minor diameter D of the magnetron 1 is smaller than or equal to the radius difference between the chamber and the wafer 4, the projection of the magnetron 1 on the base 3 is positioned between the wafer 4 and the chamber wall, so that the magnetron 1 moves in the area outside the base and the wafer, and the escaped target atoms and ions partially deposit on the edge area of the wafer 4, and partially float to the central area of the wafer 4 and deposit on the central area of the wafer 4, thereby controlling the deposition uniformity of the edge area and the central area of the wafer.
However, the minimum value of the short diameter D and the long diameter L of the magnetron is set to be a condition that the dielectric gas can be stably maintained in a plasma state, and if the size is too small, the magnetic field may be weakened, and the dielectric gas cannot be maintained in a plasma state.
Example 3
Other configurations in this embodiment are the same as those in embodiment 2, and are not described herein.
The magnetron sputtering chamber of the present embodiment further includes a rotating mechanism, as shown in fig. 4, the rotating mechanism 5 includes a rotating shaft 51, a first rotating arm 52, and a second rotating arm 53; one end of the first rotating arm 52 is fixedly connected with the rotating shaft 51, the other end is connected with one end of the second rotating arm 53, and the other end of the second rotating arm 53 is fixedly connected with the magnetron 1; an included angle is formed between the first rotating arm 52 and the second rotating arm 53; the rotation shaft 51 rotates the first rotation arm 52 and the second rotation arm 53, thereby rotating the magnetron 1.
The connection mode between the first rotating arm 52 and the second rotating arm 53 may be fixed connection or movable connection. When fixedly connected, the angle between the first rotating arm 52 and the second rotating arm 53 is not adjustable; when the first rotating arm 52 and the second rotating arm 53 are movably connected, the angle between the first rotating arm 52 and the second rotating arm 53 can be adjusted, and after the angle is adjusted to a proper angle, the first rotating arm and the second rotating arm are fixed and then rotate.
Wherein, the included angle between the first rotating arm 52 and the second rotating arm 53 is adjustable, and the included angle range is 0-180 degrees. When the included angle is 0 degree, the magnetron 1 projects on the edge area of the target 2; when the included angle is 180 degrees, the magnetron 1 projects on the central area of the target 2.
Wherein the angle between the first rotating arm 52 and the second rotating arm 53 is preferably adjustable. The angle between the first rotating arm 52 and the second rotating arm 53 is selected to correspond to the location where the through-silicon vias of the wafer need to be filled. That is, the angle between the first rotating arm 52 and the second rotating arm 53 is set according to the position of the wafer to be filled. When the included angle is 0 degree, the magnetron 1 projects on the central area of the target 2, and the silicon through hole in the central area of the wafer is filled; when the included angle is 180 degrees, the magnetron 1 projects on the edge area of the target 2, and at the moment, the edge area of the wafer is filled; according to the filling condition, the included angle between the first rotating arm 52 and the second rotating arm 53 can be timely adjusted, so that the projection position of the magnetron on the target material is adjusted, the filling position of the wafer is changed, and the through silicon via is more uniformly filled.
Example 4
Other configurations in this embodiment are the same as those in embodiment 3, and are not described herein.
As shown in fig. 5, the magnetron sputtering chamber further includes a bias unit 6, and the bias unit 6 generates a negative bias on the susceptor to attract positively charged ions vertically into the bottom of the through-silicon via of the wafer.
The magnetron sputtering chamber in this embodiment is provided with a bias unit 6 to generate a negative bias on the base 3, so that positive ions vertically enter the bottom of the through silicon via of the wafer, thereby improving the uniformity of filling the through silicon via.
In addition, the projection area of the magnetron on the target is less than one fifth of the area of the target, so that the ionization rate of the medium gas is improved, and the number of positive ions in the plasma is increased; on the basis, a bias unit is further arranged, as shown in fig. 6, so that the generated positive ions are vertically filled into the through silicon via, and on the basis of improving the filling rate, the uniformity of filling is improved; therefore, after the bias unit is arranged, the problems existing in the prior art are effectively solved: the incidence angle of the positive ions is close to vertical at the edge part of the wafer, and the incidence angle at the central part is larger, so that the problems of uneven silicon through hole filling of the central part and the silicon through hole filling of the edge part of the wafer are caused.
The bias unit preferably comprises a radio frequency power supply and a matcher, wherein the radio frequency power supply is connected with the base through the matcher; the power range of the radio frequency power supply is 800-1400W.
The power range of the radio frequency power supply is preferably 800-. When the rf power range is less than 800W, the bias generated on the susceptor has difficulty attracting positive ions into the through-silicon vias of the wafer; when the radio frequency power is larger than 1400W, the bias voltage generated on the base is too large, so that the movement speed of positive ions is too high, the energy when the positive ions are deposited to the bottom of the through silicon via 41 is stronger, the original deposition layer at the bottom of the thin through silicon via 41 can be thinned by excessive bombardment, even the deposition layer at the bottom is completely sputtered onto the side wall, and the deposition uniformity is reduced.
When the power range of the RF power source is maintained between 800 and 1400W, on one hand, the RF power source generates a proper negative bias on the susceptor, so that the kinetic energy of the positive ions is increased to a certain extent, the movement acceleration of the positive ions to the wafer 4 is accelerated, and the filling rate is increased; on the other hand, the ions maintain proper kinetic energy, and when bombarding the bottom surface of the through silicon via 41, a part of the film previously deposited at the bottom of the through silicon via 41 is separated from the position sputtered to the corner of the sidewall of the through silicon via 41, so that the coverage rate of the corner positions of the bottom and the sidewall of the through silicon via is improved, and the deposition thickness of the corner positions of the bottom and the sidewall of the through silicon via 41 is relatively uniform.
Example 5
Other configurations in this embodiment are the same as those in embodiment 4, and are not described herein.
In the magnetron sputtering chamber of the present embodiment, the vertical distance between the target 2 and the base 3 is 100-150 mm.
According to the magnetron sputtering chamber of the embodiment, on the basis that the projection area of the magnetron on the target is smaller than one fifth of the area of the target and the bias unit is arranged, the vertical distance between the target and the base is set to be 100-150mm, compared with the prior art, the target base distance is increased by being larger than 70mm, positive ions vertically filled into the through silicon holes are increased, the film coverage rate is improved, and the utilization rate of the target is improved.
The magnetron sputtering chambers for filling the through silicon vias provided in embodiments 1 to 5 of the present invention all improve the filling rate of the through silicon vias, and even further improve the filling uniformity of the through silicon vias.
Example 6
The present embodiment provides a semiconductor processing apparatus including the magnetron sputtering chamber for through-silicon-via filling according to any one of embodiments 1 to 5.
Of course, other magnetron sputtering chambers formed in any permutation and combination in the claims may be included in the semiconductor device of the present invention.
The semiconductor processing equipment in the embodiment adopts the magnetron sputtering cavity, so that the filling rate and the filling uniformity of the through silicon via filling are improved.
In summary, in the magnetron sputtering chamber and the semiconductor device for filling through silicon vias of the present invention, the projection area of the magnetron on the target is set to be less than one fifth of the area of the target, the bias unit connected to the base is provided, and/or the target base distance is set to be between 100mm and 150mm, and these three factors can be combined and supplemented with each other when the through silicon vias are filled, so as to improve the filling rate and the filling uniformity of the through silicon vias to a greater extent.
In order to prove that the magnetron sputtering chamber disclosed by the invention has the effect of improving the filling rate and the filling uniformity when filling the through silicon via, the applicant adopts the examples and the comparative examples for comparison.
In the following comparative examples and examples, magnetic control was usedThe radius of the cavity of the sputtering chamber is 222.5mm, and the radius of the base is 150 mm. The magnetron adopts a kidney-shaped structure, the length D of the short diameter of the magnetron is 75mm, and the length L of the long diameter of the magnetron is 140 mm. The wafer is a 12-inch wafer (diameter 300mm), and the target diameter is 450mm (target area 635580 mm)2)。
Meanwhile, for comparison, the magnetron is selected from three specifications, which can be respectively marked as magnetron a (for comparative example), magnetron b (for example) and magnetron c (for example). Wherein the projection area of the magnetron a on the target is 1/2 of the area of the target, namely 317925mm2(ii) a The projection area of the magnetron b on the target is 1/5 of the area of the target, namely 127170mm2(ii) a The area of the projection of the magnetron c on the target is 1/15 of the area of the target, namely 42390mm2。
The test result of the invention is characterized by three parameters of film coverage rate, film uniformity and productivity.
Wherein the film coverage is calculated by the formula of 100% Tb/Tf，TbIs the thickness of the bottom film of the through-silicon via, TfThe thickness of the film on the surface of the wafer is larger, and the larger the value is, the thicker the film deposited on the bottom of the through silicon via is.
The film uniformity is defined as the uniformity of the film thickness distribution on the surface of the wafer, and is detected by adopting a professional metal film thickness measuring device, such as MetaPULSE of Rudolph company; the film thickness uniformity is generally measured by measuring the thickness of a certain number of uniformly distributed points on the wafer, usually 49 points, the average of the film thickness of the 49 points is AVG, the variance is STDEV, and the uniformity is calculated as U-100% STDEV/AVG, and the smaller the value, the more uniform the film distribution.
The yield is defined as the number of wafers produced by the equipment in unit time, generally the number of wafers produced by the equipment in each hour, and the number of wafers produced by the equipment in each hour is also used in the detection, and the larger the value, the better the effect.
The applicant tested the performance of the wafer, and the specific test conditions and test results are shown in table 1:
TABLE 1
Magnetron Target base distance (mm) Bias unit Film coverage Uniformity of film Capacity of production
Comparative example 1 Magnetron a 70 Is free of 9％ 8.6％ 18
Example 1 Magnetron b 70 Is free of 12％ 8.3％ 21
Example 2 Magnetron c 70 Is free of 15％ 8.1％ 22
Example 3 Magnetron b 70 Is provided with 14％ 4.1％ 22
Example 4 Magnetron c 70 Is provided with 18％ 3.7％ 23
Comparing the data of example 1, example 2 and comparative example 1 in table 1, it can be seen that: when the projection area of the magnetron on the target is less than or equal to one-fifteenth of the area of the target, the film coverage rate is improved, and the filling rate of the through silicon via is further improved.
Comparing example 3 in table 1 with example 1 and example 4 with example 2, it can be seen that: on the basis of keeping the projection area on the target material less than or equal to one fifteenth of the area of the target material unchanged, after the bias unit is arranged, the coverage rate and the uniformity of the film are further improved, which shows that the filling rate and the filling uniformity of the through silicon via are improved.
According to the analysis of the data in the table 1, on the premise that the productivity is basically kept unchanged, when the projection area on the target is kept to be less than or equal to one-fifteenth of the area of the target, the ionization rate of the medium gas can be improved, the number of positive ions after magnetron sputtering is increased, and the filling rate is improved; and on the basis, the bias unit is arranged, so that the generated positive ions are incident into the through silicon via at a vertical angle, the filling rate of the through silicon via is improved, and meanwhile, the filling uniformity is improved.
Although the present invention has been described in detail by way of examples, it will be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (9)

1. A magnetron sputtering chamber for through silicon via filling, comprising: the magnetron sputtering device comprises a cavity, a target material arranged at the top of the cavity, a magnetron arranged above the target material, and a base arranged in the cavity and positioned below the target material,
the projection area of the magnetron on the target is less than one fifth of the area of the target, so that the ionization rate of the medium gas is improved, and the filling rate of the through silicon via is improved;
the vertical distance between the target and the base is 100-150 mm.
2. The magnetron sputtering chamber of claim 1 wherein a projected area of the magnetron onto the target is less than one fiftieth of an area of the target.
3. The magnetron sputtering chamber of claim 1 wherein the magnetron includes outer and inner magnetic poles of opposite magnetic polarity, the inner magnetic pole being surrounded by the outer magnetic pole.
4. The magnetron sputtering chamber of claim 3 wherein the outer pole has a major diameter and a minor diameter, the minor diameter being less than or equal to one-half of the difference between the chamber inner diameter and the wafer diameter.
5. The magnetron sputtering chamber of any of claims 1-4, further comprising a rotation mechanism, wherein the rotation mechanism comprises a rotating shaft, a first rotating arm, and a second rotating arm;
one end of the first rotating arm is fixedly connected with the rotating shaft, the other end of the first rotating arm is connected with one end of the second rotating arm, and the other end of the second rotating arm is fixedly connected with the magnetron;
an included angle is formed between the first rotating arm and the second rotating arm;
the rotating shaft drives the first rotating arm and the second rotating arm to rotate, so that the magnetron is driven to rotate.
6. The magnetron sputtering chamber of claim 5 wherein an included angle between the first rotating arm and the second rotating arm is adjustable, the included angle ranging from 0 to 180 degrees;
when the included angle is 0 degree, the magnetron projects on the central area of the target material;
when the included angle is 180 degrees, the magnetron projects on the edge area of the target.
7. The magnetron sputtering chamber of claim 1 further comprising a biasing unit that generates a negative bias on the pedestal to attract positive ions vertically into the bottom of the through-silicon via of the wafer.
8. The magnetron sputtering chamber of claim 7, wherein the bias unit comprises a radio frequency power supply and a matcher, wherein the radio frequency power supply is connected with the pedestal through the matcher; the power range of the radio frequency power supply is 800-1400W.
9. A semiconductor processing apparatus comprising the magnetron sputtering chamber for through silicon via filling as claimed in any one of claims 1 to 8.
CN201710327078.8A 2017-05-10 2017-05-10 Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment Active CN107068599B (en)

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Application Number Priority Date Filing Date Title
CN201710327078.8A CN107068599B (en) 2017-05-10 2017-05-10 Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment
PCT/CN2017/095587 WO2018205430A1 (en) 2017-05-10 2017-08-02 Magnetron sputtering cavity for through-silicon-via filling and semiconductor processing device
TW106126393A TWI634224B (en) 2017-05-10 2017-08-04 Magnetron sputtering chamber and semiconductor processing device for through-silicon via filling

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CN201710327078.8A CN107068599B (en) 2017-05-10 2017-05-10 Magnetron sputtering chamber for filling through silicon via and semiconductor processing equipment

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