CN220122326U - Novel saturable absorption mirror - Google Patents
Novel saturable absorption mirror Download PDFInfo
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- CN220122326U CN220122326U CN202321594973.3U CN202321594973U CN220122326U CN 220122326 U CN220122326 U CN 220122326U CN 202321594973 U CN202321594973 U CN 202321594973U CN 220122326 U CN220122326 U CN 220122326U
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- layer
- saturable absorber
- antireflection
- absorber mirror
- reflection layer
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- 238000010521 absorption reaction Methods 0.000 title description 19
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000006096 absorbing agent Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000009825 accumulation Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 8
- 239000004793 Polystyrene Substances 0.000 description 7
- 239000004005 microsphere Substances 0.000 description 7
- 229920002223 polystyrene Polymers 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
The utility model discloses a novel saturable absorber mirror, which comprises a substrate and a metal reflecting layer covered on the substrate, wherein a cavity absorbing layer is covered on the metal reflecting layer, a dielectric film antireflection layer is arranged on the cavity absorbing layer, the dielectric film antireflection layer comprises a plurality of antireflection layers which are stacked, a second antireflection layer is arranged between adjacent antireflection layers, and the refractive index of a first antireflection layer material is different from that of a second antireflection layer material. The utility model has simple structure, effectively reduces the layer number accumulation of semiconductor materials, has simpler and more convenient manufacturing process than the manufacturing process of the semiconductor saturable absorber mirror, avoids the defects of the production process, improves the working performance of the saturable absorber mirror and prolongs the service life of the saturable absorber mirror.
Description
Technical Field
The utility model relates to the technical field of semiconductor lasers, in particular to a novel saturable absorber mirror.
Background
The saturable absorber mirror is generally manufactured by adopting a semiconductor material, and the special semiconductor material is directly grown on the semiconductor Bragg reflector to obtain the reflector with the saturable absorption property, which is widely applied to various laser cavities as a passive mode locking device to generate ultra-short pulse trains. The uppermost layer of the semiconductor saturable absorber mirror directly uses the interface of the semiconductor and air as an upper layer reflector, the semiconductor Bragg reflector as a lower layer reflector, a Fabry-Perot cavity is formed, and the modulation depth of the absorber and the bandwidth of the reflector are adjusted by changing the thickness of the upper layer semiconductor absorber and the material and structure of the Bragg reflector. The Bragg reflector adopted by the semiconductor saturable absorber mirror used as a laser component has the advantages of more reflection pair layers, complex manufacturing process, easy occurrence of 'heat absorption point' in the preparation process of the semiconductor to cause optical damage, damage of an absorption layer and influence on the performance and service life of the semiconductor saturable absorber mirror.
Disclosure of Invention
The utility model aims at: aiming at the prior art, a novel saturable absorber mirror is provided.
The technical scheme of the utility model is as follows:
the novel saturable absorber mirror comprises a substrate and a metal reflecting layer covered on the substrate, wherein a cavity absorbing layer is covered on the metal reflecting layer, a dielectric film antireflection layer is arranged on the cavity absorbing layer, the dielectric film antireflection layer comprises a plurality of antireflection layers which are stacked, and a second antireflection layer is arranged between every two adjacent antireflection layers; the refractive index of the first anti-reflection layer material is different from that of the second anti-reflection layer material.
Further, the thickness of the first anti-reflection layer is lambda/4N, the thickness of the second anti-reflection layer is lambda/4N, wherein lambda is the working center wavelength of the saturable absorber mirror, N is the refractive index of the material of the first anti-reflection layer, and N is the refractive index of the material of the second anti-reflection layer.
Further, the material used for the cavity absorption layer is the same as the material used for the first anti-reflection layer or the second anti-reflection layer.
Further, the material of the cavity absorption layer includes, but is not limited to, siO 2 、Si 3 N 4 Or Ta 2 O 5 One of them.
Further, the metal reflective layer material includes Au.
Further, the methodSubstrate materials including but not limited to GaAs, si or Al 2 O 3 One of them.
Compared with the prior art, the utility model has the beneficial effects that:
the novel semiconductor Bragg reflector is replaced by the metal reflecting layer, specific wavelength light is filtered through the dielectric film anti-reflection layer, the light is modulated in the internal cavity between the metal reflecting layer and the dielectric film anti-reflection layer, and the modulated light is emitted through the metal reflecting layer to generate ultrashort pulse light. The novel structure is simple, the layer number accumulation of semiconductor materials is effectively reduced, the manufacturing process is simpler and more convenient than that of the semiconductor saturable absorber mirror, the defect of the production process is avoided, and the working performance and the service life of the saturable absorber mirror are improved.
Drawings
Fig. 1 is a schematic structural view of the present utility model.
Reference numerals:
1. a substrate; 2. a metal reflective layer; 3. a cavity absorption layer; 4. a dielectric antireflection film layer; 41. a first anti-reflection layer; 42. a second anti-reflection layer; 31. a cavity.
Detailed Description
It is noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The features and capabilities of the present utility model are described in further detail below in connection with examples.
As shown in FIG. 1, the novel saturable absorber mirror comprises a substrate 11 and a metal reflecting layer 2 covered on the substrate 1, wherein a cavity absorbing layer 3 is covered on the metal reflecting layer 2, a dielectric film anti-reflection layer 4 is arranged on the cavity absorbing layer 3, the cavity absorbing layer 3 comprises a plurality of uniformly arranged cavities 31, the upper half part of each cavity 31 is a hemispherical body, and light is conveniently subjected to resonance modulation in the cavities 31. The top of the cavity absorption layer 3 is a hemispherical array formed by a plurality of hemispherical surfaces, and the hemispherical array is covered by the dielectric film anti-reflection layer 4. The dielectric film antireflection layer 4 comprises a plurality of first antireflection layers 41 which are stacked, and a second antireflection layer 42 is arranged between every two adjacent first antireflection layers 41. The refractive index of the material of the first anti-reflection layer 41 is different from that of the material of the second anti-reflection layer 42. The dielectric film anti-reflection layer 4 adopts a multi-layer structure of alternately laminating two materials so as to improve the filtering effect of light rays with specific wavelengths. Adjusting the thickness and materials of the first and second antireflection layers 41 and 42 and the number of layers of the dielectric film antireflection layer 4 can adjust the wavelength range of the filtered light. When the cavity absorption layer 3 absorbs light rays with specific wavelength, electrons in the constituent materials are excited to absorb the light rays, meanwhile, resonance occurs in the cavity 31 in the cavity absorption layer 3 to modulate the light rays, the absorption efficiency of the light rays is improved, and when the absorption energy of the cavity absorption layer 3 reaches a saturated state, ultrashort laser pulses are emitted through the metal reflection layer 2.
The thickness of the first anti-reflection layer is lambda/4N, the thickness of the second anti-reflection layer is lambda/4N, lambda is the working center wavelength of the saturable absorber mirror, N is the refractive index of the first anti-reflection layer material, and N is the refractive index of the second anti-reflection layer material.
The material used for the cavity absorption layer 3 is the same as that used for the first anti-reflection layer 41 or the second anti-reflection layer 42. The material of the cavity absorbing layer 3 includes, but is not limited to, siO 2 、Si 3 N 4 Or Ta 2 O 5 One of them. The hollow cavity of the embodimentThe material of the absorption layer 3 is SiO 2 The first anti-reflection layer 41 is made of Si 3 N 4 . In order to ensure the light absorption and modulation effect, the material of the second anti-reflection layer 42 is the same as that of the cavity absorption layer 3, so SiO is adopted 2 。
The metal reflective layer 2 material comprises Au. Since the lower the reflectivity of the metal is, the higher the wavelength of the emitted light is, and for the saturable absorber mirror for a laser, the higher the reflectivity of the metal is required, cu, mo, au are generally used, and Au is used for the preparation of the metal reflective layer 2 in this embodiment. The metal film is prepared by vacuum thermal evaporation, direct current sputtering, magnetron sputtering, radio frequency sputtering, laser pulse deposition and other methods, in this embodiment, since the substrate material is GaAs and the metal reflective layer 2 is Au, the preparation is performed on the GaAs substrate by the magnetron sputtering method.
Substrate 1 Material substrate materials include, but are not limited to GaAs, si or Al 2 O 3 One of them. The substrate is generally prepared from a material with a higher heat dissipation coefficient, so that the influence of the too high working temperature on the working performance of the saturable absorber mirror is avoided, and GaAs is adopted in the embodiment 1.
When the novel GaAs material substrate 1 is prepared, the metal reflecting layer 2 with the required thickness is deposited, the metal reflecting layer 2 is made of Au, the diameter of the spherical space on the upper part of the cavity 31 is calculated according to the working wavelength of the Au, the polystyrene microsphere solution is dripped on the water surface, the polystyrene microsphere array is attached on the water surface, and the diameter of the polystyrene microsphere is the diameter of the spherical space on the upper part of the cavity 31. Transferring polystyrene microsphere array onto substrate 1 with prepared metal reflecting layer 2, drying, and uniformly growing SiO as cavity absorption layer 3 on metal reflecting layer 2 with polystyrene microsphere array by PECVD device 2 In SiO 2 Is sufficient to maintain the shape of the cavity 31 and to complete the preparation of the cavity absorber layer 3, siO 2 Typically 50-100nm thick. Continuing to grow Si on the cavity absorption layer 3 by PECVD 3 N 4 The first anti-reflection layer 41 is prepared until Si 3 N 4 Stopping the process when the thickness is lambda/4 n to complete the preparation of the first anti-reflection layer 41, and growing on the first anti-reflection layer 41SiO 2 Second anti-reflection layer 42 is prepared, siO 2 Stopping the process at a thickness of lambda/4N completes the preparation of the second anti-reflection layer 42. The first anti-reflection layer 41 and the second anti-reflection layer 42 are repeatedly and alternately prepared until the preparation of the dielectric film anti-reflection layer 4 is completed after the first anti-reflection layer 41 covers the polystyrene microsphere. In this embodiment, the preparation of the first antireflection layer 41 and the second antireflection layer 42 is performed only twice, and the prepared plasma film antireflection layer 4 can meet the requirement of generating ultrashort wave pulse light, so that the layer number accumulation of semiconductor materials is effectively reduced. Finally, the crystal is heated at 400 ℃ for 1h to decompose the surface polystyrene microsphere to obtain a novel saturable absorber mirror epitaxial wafer, and the novel saturable absorber mirror is obtained by segmentation.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present utility model. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present utility model is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The novel saturable absorber mirror comprises a substrate and a metal reflecting layer covered on the substrate, and is characterized in that a cavity absorbing layer is covered on the metal reflecting layer, a dielectric film antireflection layer is arranged on the cavity absorbing layer, the dielectric film antireflection layer comprises a plurality of first antireflection layers which are stacked, and a second antireflection layer is arranged between every two adjacent first antireflection layers; the refractive index of the first anti-reflection layer material is different from that of the second anti-reflection layer material.
2. The novel saturable absorber mirror of claim 1, wherein the first anti-reflection layer has a thickness of λ/4N and the second anti-reflection layer has a thickness of λ/4N, wherein λ is a working center wavelength of the saturable absorber mirror, N is a refractive index of the first anti-reflection layer material, and N is a refractive index of the second anti-reflection layer material.
3. The novel saturable absorber mirror of claim 1, wherein the cavity absorber layer is formed from the same material as the first or second anti-reflection layer.
4. A novel saturable absorber mirror according to claim 3, wherein the material of the cavity absorber layer comprises, but is not limited to, siO 2 、Si 3 N 4 Or Ta 2 O 5 One of them.
5. A novel saturable absorber mirror according to claim 1, wherein said metallic reflective layer material comprises Au.
6. A novel saturable absorber mirror according to claim 1, wherein said substrate material comprises, but is not limited to GaAs, si or Al 2 O 3 One of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321594973.3U CN220122326U (en) | 2023-06-21 | 2023-06-21 | Novel saturable absorption mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321594973.3U CN220122326U (en) | 2023-06-21 | 2023-06-21 | Novel saturable absorption mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220122326U true CN220122326U (en) | 2023-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321594973.3U Active CN220122326U (en) | 2023-06-21 | 2023-06-21 | Novel saturable absorption mirror |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220122326U (en) |
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2023
- 2023-06-21 CN CN202321594973.3U patent/CN220122326U/en active Active
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