CN220099198U - Device for treating scanning tunnel microscope needle point through ion sputtering in ultrahigh vacuum - Google Patents
Device for treating scanning tunnel microscope needle point through ion sputtering in ultrahigh vacuum Download PDFInfo
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- CN220099198U CN220099198U CN202321553263.6U CN202321553263U CN220099198U CN 220099198 U CN220099198 U CN 220099198U CN 202321553263 U CN202321553263 U CN 202321553263U CN 220099198 U CN220099198 U CN 220099198U
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- needle point
- fixed
- treating
- base flange
- ion sputtering
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 19
- 230000005641 tunneling Effects 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052786 argon Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 6
- VQAPWLAUGBBGJI-UHFFFAOYSA-N [B].[Fe].[Rb] Chemical compound [B].[Fe].[Rb] VQAPWLAUGBBGJI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- -1 argon ions Chemical class 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 7
- 125000004429 atom Chemical group 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The utility model relates to a device for treating the needle point of a scanning tunneling microscope in ultra-high vacuum through ion sputtering. It comprises the following steps: the needle point frame device is provided with a groove in the vertical direction, can be used for placing a needle point frame, is internally provided with a stud, is fixedly provided with a tantalum sheet, is provided with a rubidium-iron-boron magnet below the tantalum sheet and is used for magnetically attracting needle point feet to form a current loop, and one side of the needle point frame, on which the needle point is placed, faces the tantalum sheet and is used for guiding away argon ions accumulated in the bombardment process, so that the bombardment efficiency is improved; the four-way clamping device is provided with a clamping baffle in the horizontal direction and two clamping holes in the vertical direction. A middle supporting platform, one end of which is provided with a threaded rod; the other end of the threaded rod is connected with the base flange, and the length of the coarse threaded rod and the base flange can be changed according to requirements to be used in various scanning tunnel microscope cavities. The utility model has simple structure and lower cost.
Description
Technical Field
The utility model relates to a device for treating a scanning tunneling microscope needle point in ultrahigh vacuum through ion sputtering, belonging to the technical field of ultrahigh vacuum electronic devices.
Background
A scanning tunneling microscope is one of the important characterization means of modern surface science, by which researchers can observe the arrangement of atoms on the surface of a substance and the related physicochemical properties in real time. The scanning tunnel microscope mainly comprises a needle point, a piezoelectric scanner, a damping system and an electronic control system. Wherein the shape and conductivity of the scanning tunneling microscope tip are closely related to the quality of the scanned image.
For tungsten tips of wide application, electrochemical corrosion methods may be used to obtain well-formed tips. In the vacuum chamber, when a sharp metal tip approaches the surface of the conductive sample (pitch smaller than) Because of the overlap of wave functions between the needle tip atoms and the sample atoms, a bias voltage is applied between the needle tip and the sample, and electrons pass through the potential barrier between the needle tip and the sample, thereby generating tunneling current.
But the tip will adsorb the heteroatoms during scanning of the sample. For a long time, the adsorbed heteroatoms may affect the normal operation of the needle tip, so that the resolution of the obtained image is greatly compromised. Therefore, periodic cleaning of the needle tip is critical to acquiring high resolution images.
Currently, there is no uniform commercial equipment for cleaning the tip of a scanning tunneling microscope. The treatment mode of the needle tip is different due to different types of scanning tunnel microscopes. For example, the low-temperature scanning tunnel microscope system produced by CreaTec company can remove surface oxide layer pollutants by directly contacting the needle tip with the filament of the electron beam heating device, but can cause heat radiation to influence the vacuum degree; in addition, hydrofluoric acid can be used for removing the oxide layer on the surface of the tungsten needle tip, but the method needs to break the true vacuum degree of the instrument, the needle tip is placed in the atmosphere, and the oxide film cannot be formed again after the treated needle tip contacts air.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model provides a device for treating the scanning tunnel microscope needle point in ultrahigh vacuum through ion sputtering, which is used for removing an oxide layer on the surface of the needle point in the preparation process of the needle point, can efficiently guide argon ions out of a needle point frame, improves the treatment efficiency and obtains the scanning tunnel microscope needle point with good conductivity and stable working state. The vacuum treatment needle point device has a simple structure, can be operated in a vacuum cavity, and has a good effect of treating a needle point oxide layer and a magazine adsorbate.
The technical scheme adopted by the utility model is as follows:
a device for treating the needle point of a scanning tunnel microscope in ultrahigh vacuum by ion sputtering comprises a bombardment treatment device and a base support device.
The bombardment treatment device comprises: the needle tip holder device is fixed, the magnetic attraction device and the four-way clamping device. The fixed needle point frame device is slotted in the vertical direction and is internally provided with a mounting stud for fixing the tantalum sheet and the magnet; the magnet is arranged below the tantalum sheet and is fixed by two tantalum wires, and the tantalum wires are fixed on the tantalum sheet in a spot welding mode to form the magnetic attraction device. Further, the magnetic attraction device is contacted with the needle point pin grounding pin of the needle point on the needle point frame to form a current loop for guiding argon ion charges generated in the bombardment process of the argon ion gun, reducing the accumulation of the needle point charges and improving the bombardment efficiency. The four-way clamping device is provided with a clamping baffle in the horizontal direction and two clamping holes in the vertical direction.
The base support device includes: middle part supporting platform, base flange and intermediate junction are with screw rod. The middle supporting platform is a plane disc, the diameter of the disc is smaller than that of a mounting hole of the vacuum equipment, and two supporting columns are symmetrically welded on the disc and used for fixing the bombardment treatment device. Further, the base flange and the middle supporting platform are connected through a stud, the stud is welded and fixed with the base flange, and the stud is fixed with the middle supporting platform through a nut.
The utility model has the beneficial effects that:
(1) The scanning tunnel microscope needle point treatment device provided by the utility model can realize ion sputtering treatment of the needle point under a vacuum condition, can guide argon ions out of the needle point frame with high efficiency, ensures the efficiency of treating the needle point, effectively removes oxide layers and impurity adsorbates on the surface of the needle point, and obtains the needle point with good conductive property and stable working state.
(2) The length of the coarse screw rod and the base flange can be changed according to the requirements, and the coarse screw rod can be used in various scanning tunnel microscope cavities.
(3) The device has simple structure principle, easy replacement and upgrade of parts and easy repair.
Drawings
Fig. 1 is a schematic structural diagram of the present embodiment.
Fig. 2 is a schematic structural view of the bombardment treatment device.
Fig. 3 is a schematic view of the structure of the magnetic tip of the bombardment treatment device.
Fig. 4 is a schematic view of the structure of a sample holder carrying a needle holder.
The reference numerals include:
1-transversely clamping a baffle; 2-contacting the tantalum sheet with the needle tip; 3-fixing the stud; 4-rubidium-iron-boron magnet; 5-fixing a magnet tantalum wire; 6-a nut for fixing the tantalum sheet; 7-longitudinal clamping holes; 8-supporting columns; 9-fixing the nut; 10-supporting a platform; 11-a base flange; 12-needle holder sample holder fixing groove; 13-a support column fixing groove; 14-needle holder sample rack; 15-needle tip; 16-grounding feet of needle tip pins; 17-wire.
Detailed Description
The present utility model is described in detail below with reference to the drawings so that the advantages and features thereof can be more readily understood by those skilled in the art. .
In the description of the present utility model, it should be understood that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
The structures, proportions, sizes and the like shown in the drawings of the present utility model are used for being understood and read by those skilled in the art in combination with the disclosure, and are not intended to limit the applicable scope of the present utility model, so that any modification, variation of the proportions or adjustment of the sizes of the structures, the proportions and the like do not have any technical significance, and all fall within the scope of the disclosure without affecting the efficacy and achievement of the present utility model.
Examples:
as shown in fig. 1 to 4. An apparatus for treating a scanning tunneling microscope tip in an ultra-high vacuum by ion sputtering, comprising:
bombardment treatment device (fig. 2) and base support device.
The bombardment treatment device comprises: transversely clamping the baffle plate 1; the tantalum sheet 2 is contacted with the needle tip; a fixing stud 3; a rubidium-iron-boron magnet 4; a fixed magnet tantalum wire 5; a nut 6 for fixing the tantalum sheet; a longitudinal clamping hole 7; a needle holder sample holder holding groove 12; support column fixing groove 13. As shown in fig. 2, the rubidium-iron-boron magnet 4 is fixed on the tantalum sheet 2 in contact with the needle tip by the fixed magnet tantalum wire 5, and the fixed magnet tantalum wire 5 is fixed on the tantalum sheet 2 in contact with the needle tip by spot welding, so that the magnetic attraction device shown in fig. 3 is formed. Further, the magnetic attraction device is contacted with the grounding pin 16 of the needle tip pin of the needle tip 15 on the needle tip frame to form a current loop for guiding argon ion charges generated in the bombardment process of the argon ion gun, reducing the accumulation of the needle tip charges and improving the bombardment efficiency. The magnetic attraction device is fixed on the fixed stud 3 by a nut 6 for fixing the tantalum sheet. The four-way clamping device is characterized in that the horizontal direction of the four-way clamping device is provided with a transverse clamping baffle plate 1, and the vertical direction of the four-way clamping device is provided with a longitudinal clamping hole 7, so that the four-way clamping device is convenient to operate at multiple angles in the vacuum cavity. The needle tip holder is secured within the needle holder sample holder mounting slot 12 as shown in FIG. 4.
The base support device includes: a support column 8; a fixing nut 9; a support platform 10; a base flange 11. The support platform 10 is a planar disk having a diameter smaller than the diameter of the vacuum apparatus mounting hole. The upper bombardment treatment device and the lower base flange 11 are connected by a support platform 10. The upper bombardment treatment device is fixed on the support column 8 by a support column fixing groove 13. Two support columns 8 are symmetrically welded on a support platform 10. Further, the base flange 11 and the middle supporting platform 10 are connected by a stud, the stud is welded and fixed with the base flange 11, and the stud is fixed with the middle supporting platform 10 by a fixing nut 9. If the base flange welded with studs with corresponding sizes is to be replaced in various scanning tunnel microscope cavities.
The foregoing is merely exemplary of the present utility model, and those skilled in the art should not be considered as limiting the utility model, since modifications may be made in the specific embodiments and application scope of the utility model in light of the teachings of the present utility model.
Claims (6)
1. An apparatus for treating a scanning tunneling microscope tip in an ultra-high vacuum by ion sputtering, characterized by: the bombardment treatment device comprises: transversely clamping the baffle (1); the tantalum sheet (2) is contacted with the needle tip; a fixing stud (3); a rubidium-iron-boron magnet (4); a fixed magnet tantalum wire (5); a nut (6) for fixing the tantalum sheet; a longitudinal clamping hole (7); a needle holder sample holder fixing groove (12); a support column fixing groove (13); the base support device includes: a support column (8); a fixing nut (9); a support platform (10); base flange (11): the bombardment treatment device is fixed on a support column (8) of a support platform (10), and a base flange (11) is connected with the middle support platform (10) through a stud.
2. The apparatus for treating a scanning tunneling microscope tip by ion sputtering in an ultra-high vacuum according to claim 1, wherein: in the bombardment treatment device, a rubidium-iron-boron magnet (4) is fixed on a tantalum sheet (2) contacted with a needle tip by a fixed magnet tantalum wire (5), and the fixed magnet tantalum wire (5) is fixed on the tantalum sheet (2) contacted with the needle tip by a spot welding mode to form a magnetic attraction device.
3. The apparatus for treating a scanning tunneling microscope tip by ion sputtering in an ultra-high vacuum according to claim 2, wherein: the magnetic attraction device is contacted with a grounding pin (16) of a needle point pin of a needle point (15) on the needle point frame to form a current loop for guiding argon ion charges generated in the bombardment process of the argon ion gun, reducing the charge accumulation of the needle point and improving the bombardment efficiency.
4. The apparatus for treating a scanning tunneling microscope tip by ion sputtering in an ultra-high vacuum according to claim 1, wherein: the horizontal direction of the bombardment treatment device is provided with a transverse clamping baffle (1), and the vertical direction is provided with a longitudinal clamping hole (7), so that the bombardment treatment device is convenient to operate at multiple angles in the vacuum cavity.
5. The apparatus for treating a scanning tunneling microscope tip by ion sputtering in an ultra-high vacuum according to claim 1, wherein: the base supporting device is connected with the upper bombardment treatment device and the lower base flange (11) through a supporting platform (10); the upper bombardment treatment device is fixed on the support column (8) by a support column fixing groove (13); two support columns (8) are symmetrically welded on a support platform (10); further, the base flange (11) and the middle supporting platform (10) are connected through a stud, the stud is welded and fixed with the base flange (11), and the stud is fixed with the middle supporting platform (10) through a fixing nut (9).
6. The apparatus for treating a scanning tunneling microscope tip by ion sputtering in an ultra-high vacuum according to claim 5, wherein: the base support device can be used in various scanning tunnel microscope cavities only by replacing the base flange welded with the studs with corresponding sizes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321553263.6U CN220099198U (en) | 2023-06-17 | 2023-06-17 | Device for treating scanning tunnel microscope needle point through ion sputtering in ultrahigh vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321553263.6U CN220099198U (en) | 2023-06-17 | 2023-06-17 | Device for treating scanning tunnel microscope needle point through ion sputtering in ultrahigh vacuum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220099198U true CN220099198U (en) | 2023-11-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321553263.6U Active CN220099198U (en) | 2023-06-17 | 2023-06-17 | Device for treating scanning tunnel microscope needle point through ion sputtering in ultrahigh vacuum |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220099198U (en) |
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2023
- 2023-06-17 CN CN202321553263.6U patent/CN220099198U/en active Active
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