CN220047680U - High-efficient processing apparatus of semiconductor production line toxic gas - Google Patents
High-efficient processing apparatus of semiconductor production line toxic gas Download PDFInfo
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- CN220047680U CN220047680U CN202321485760.7U CN202321485760U CN220047680U CN 220047680 U CN220047680 U CN 220047680U CN 202321485760 U CN202321485760 U CN 202321485760U CN 220047680 U CN220047680 U CN 220047680U
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- 239000002341 toxic gas Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 189
- 239000007921 spray Substances 0.000 claims abstract description 82
- 239000007789 gas Substances 0.000 claims abstract description 35
- 238000005406 washing Methods 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 239000003595 mist Substances 0.000 claims abstract description 12
- 238000000197 pyrolysis Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000011001 backwashing Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 231100000614 poison Toxicity 0.000 claims 1
- 230000007096 poisonous effect Effects 0.000 claims 1
- 238000004064 recycling Methods 0.000 abstract description 2
- 230000001502 supplementing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model discloses a toxic gas high-efficiency treatment device for a semiconductor production line, which relates to the technical field of gas water washing, and comprises a water tank, a controller, a high-temperature reaction cavity and a water washing spray cavity, wherein a water mist separator is connected in series on the water washing spray cavity, a second spray pipe is respectively arranged in a first spray section and a second spray section, and a water inlet of the second spray pipe is connected with the water tank through a water return pipe connected in series with a pump body and a first pressure sensor, and the technical advantages of the utility model are that: the high-temperature reaction cavity, the water tank and the water washing spray cavity are sequentially arranged, so that pyrolysis, water washing and spray operation of toxic gas are realized, and the treatment quality of the toxic gas is further improved; the circulating pump and the circulating pump valve are additionally arranged, so that water in the water tank can be pumped into the second spray pipe for recycling, and the utilization rate of the water is further improved; the water circulation and water supplementing operation can be realized by additionally installing the vertical pump and the ball valve, integrating the backwash water inlet pipe and the water inlet pipe into a whole and utilizing a single pump.
Description
Technical Field
The utility model relates to the technical field of gas washing, in particular to a toxic gas high-efficiency treatment device for a semiconductor production line.
Background
Harmful gases are generated in the semiconductor production process, mainly because many semiconductor materials are manufactured by using high-temperature, high-pressure, chemical corrosion and other processes, and some harmful gases are released by the processes. For example, materials and chemicals such as silicon dioxide, boron trichloride, hydrofluoric acid, ammonia, photoresist, and the like may generate harmful gases during semiconductor manufacturing processes. These harmful gases, if not properly treated and emissions controlled, can be harmful to the environment and human health. Therefore, effective environmental protection measures are required in the semiconductor production process to minimize the emission of harmful gases.
The existing gas treatment method mainly comprises the following steps: the method comprises the steps of (1) an adsorbent adsorption method for separating toxic gas by utilizing the characteristics of an adsorbent, a condensation absorption method for condensing the toxic gas by cooling in a condenser, a redox method for introducing the toxic gas into a redox reactor, a water washing method for removing the toxic gas by flushing and adsorbing water in water, and a combustion method for burning the toxic gas in a combustion furnace at high temperature; the methods have advantages and disadvantages, and the high-efficiency treatment of toxic gas is realized by combining the partial methods; if the water washing module is selected, a large amount of water resources are needed in the harmful gas water washing process, and the concentration and the number of the spray liquid are required to be monitored and regulated frequently, so that a large amount of water resources are consumed, and the discharge amount is also large.
Disclosure of Invention
The device provides a semiconductor production line toxic gas high-efficiency treatment device, and the specific implementation mode is as follows:
an efficient treatment device for toxic gases in a semiconductor production line, comprising:
the top of the water tank is provided with a high-temperature reaction cavity and a washing spray cavity in parallel, and the three cavities are in a U-shaped conduction structure;
the high-temperature reaction chamber is sequentially divided into a converging section, a heating section and a first spraying section from top to bottom for merging the air inlet pipes, and the high-temperature reaction chamber is used for pyrolysis of toxic gas;
the water mist separator is connected in series to the water washing spray cavity, and the lower part of the water mist separator in the water washing spray cavity is provided with a second spray section, and the water mist separator is used for dehydrating and discharging the washed harmful gas;
the second spray pipe is respectively arranged in the first spray section and the second spray section, and the water inlet of the second spray pipe is connected with the water tank through a return pipe connected with the pump body and the first pressure sensor in series;
and the signal receiving end of the controller is electrically connected with the first pressure sensor, and the signal transmitting end of the controller is electrically connected with the pump body.
Through above technical scheme, utilize high temperature reaction chamber, water tank and washing spray the chamber. The high-temperature decomposition, the water washing and the spraying after the introduction of the harmful gas are sequentially realized, the water mist separator arranged at the guide-out part of the harmful gas can prevent the cleaning water from being carried out from the upper part, the water in the water tank can be used for circulating, dissolving the acid gas and precipitating the particulate matters, and the first pressure sensor is used for detecting the pressure of the water return pipe.
Preferably, the water-mist-separation device further comprises a backwash water inlet pipe and a backwash assembly connected in series on the backwash water inlet pipe, wherein a backwash generation section is arranged between a second spray section in the water-mist-separation device, and the end part of the backwash water inlet pipe is inserted into the backwash generation section and connected with a first spray pipe in parallel.
Preferably, the backwashing assembly comprises a third flowmeter, a second pressure sensor, a second manual valve and a pneumatic electromagnetic valve which are connected in series on the backwashing water inlet pipe, wherein the third flowmeter and the second pressure sensor are electrically connected to a signal receiving end of the controller, and a signal transmitting end of the controller is also electrically connected to the pneumatic electromagnetic valve.
Through above technical scheme, the first shower has realized the cleanness in second spray section, first spray section and the water tank, has further promoted the life of device and the quality of follow-up gas washing.
Preferably, the water tank, the high-temperature reaction cavity, the washing spray cavity, the water return pipe and the backwashing component are all arranged in the mounting box.
Preferably, the device further comprises an air conduit for inputting harmful gases, the air conduit is connected with a first manual valve in series, and the end part of the air conduit is communicated with a second air inlet of the three-way valve.
Preferably, the device further comprises a nitrogen guide pipe for introducing nitrogen, wherein the nitrogen guide pipe is connected with a nitrogen distribution assembly in series, and the tail end of the nitrogen guide pipe is bifurcated into a first branch pipe communicated with a first air inlet in the three-way valve and a second branch pipe communicated with the heating section.
Preferably, the nitrogen distribution assembly comprises a first electromagnetic valve and a third manual valve which are connected in series with the main path of the nitrogen guide pipe, the first branch pipe and the second branch pipe are respectively connected in series with a second flowmeter and a first flowmeter, the second flowmeter and the first flowmeter are electrically connected with the signal receiving end of the controller, and the signal transmitting end of the controller is also electrically connected with the first electromagnetic valve.
Through above technical scheme, let in nitrogen gas to heating section and three-way valve, the heating section heats to more than 800 through current heating rod, and then decomposes harmful gas, and nitrogen gas can promote the decomposition of harmful gas from upper and lower portion's blowing.
Preferably, a plurality of second spray pipes are arranged in the first spray section and the second spray section, and each second spray pipe is vertically distributed.
Preferably, the device further comprises a water inlet pipe and a water return pipe which are communicated with the water tank, wherein a check valve for preventing fresh clean water from flowing backwards is connected to the water inlet pipe in series, a first pressure sensor is connected to the water return pipe in series, the tail end of the first pressure sensor is connected to the first spray pipe, the tail end of the first manual valve in the air conduit is divided into two branches, the first branches are communicated with the second air inlet, a plurality of liquid level sensors are distributed in the water tank at equal intervals along the vertical direction, and the liquid level sensors and the first pressure sensor are electrically connected to the signal receiving end of the controller.
Through above technical scheme, first branch road is used for harmful gas's import, sets up the automatic management of water can be carried out to the level sensor of co-altitude, accurate judgement water tank internal water's surplus, and then reduces water consumption through controller and the pump body, and the water tank can also be provided with the water level pipe that is used for the direct-viewing reading to and be used for the manual drain valve of drainage.
Further, the connection mode of the return pipe and the water tank is divided into two types, namely:
first, the inlet tube is alternately located integrative with the wet return, has concatenated the ball valve on the inlet tube, and the inlet tube tip has connect vertical pump, and air duct's second branch road connects in the gas path end of ball valve, closes the ball valve when second branch road is used for harmful gas to introduce.
And the water inlet pipe and the water return pipe are mutually independent, the water return pipe is sequentially connected with a circulating pump and a fourth manual valve in series, the water inlet pipe is connected with a water pump and a water pump valve in series, the gas paths of the water pump and the water pump valve are connected with a second branch of the air conduit in a terminating mode, and the water pump valve are closed when the second branch is used for introducing harmful gas.
In summary, the utility model has the following beneficial technical effects:
1. according to the utility model, by sequentially arranging the high-temperature reaction chamber, the water tank and the water washing spray chamber, the pyrolysis, water washing and spray operation of toxic gas are realized, and the treatment quality of the toxic gas is further improved;
2. according to the utility model, the circulating pump and the circulating pump valve are additionally arranged, so that water in the water tank can be driven into the second spray pipe for recycling, and the utilization rate of the water is further improved;
3. according to the utility model, the backwash water inlet pipe and the water inlet pipe are integrated into a whole by additionally arranging the vertical pump and the ball valve, and waterway circulation and water tank water replenishing operation can be realized by utilizing a single pump;
4. through installing backwash subassembly and backwash inlet tube additional, when stopping harmful gas and leading-in, leading-in clean water through the backwash inlet tube, regularly clean water tank and relevant pipeline.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
fig. 2 is an enlarged view of a part of the structure of the intake pipe of fig. 1 according to the present utility model;
FIG. 3 is an enlarged view of a portion of the structure of the high temperature reaction chamber of FIG. 1 according to the present utility model;
FIG. 4 is an enlarged view of a portion of the structure of the water wash spray chamber of FIG. 1 in accordance with the present utility model;
FIG. 5 is a schematic perspective view of the present utility model;
FIG. 6 is a schematic perspective view of the tape mounting case of the present utility model;
FIG. 7 is an enlarged view of a portion of the nitrogen conduit structure of FIG. 1 in accordance with the present utility model;
FIG. 8 is an enlarged view of a portion of the backwash assembly of FIG. 1 in accordance with the present utility model;
FIG. 9 is an electrical schematic of the present utility model;
fig. 10 is a schematic structural view of the present utility model after application of the variant.
Reference numerals illustrate:
1. a high temperature reaction chamber, 2, a water washing spray chamber, 3, a vertical pump, 4, a first spray pipe, 5, an air inlet pipe, 6, a nitrogen distribution component, 7, a backwash component, 8, a nitrogen guide pipe, 9, a water mist separator, 10, a mounting box, 11, a water tank, 12, an air guide pipe, 13, a second spray pipe, 14, a backwash water inlet pipe, 15, a water inlet pipe, 16, a water return pipe, 17, a controller, 18, a ball valve, 19, a check valve, 20, a first pressure sensor, 21, a circulation pump, 22, a filter screen, 23, a fourth manual valve, 24, a first manual valve, 25, a liquid level sensor, 26, a water pump, 27, a water pump valve, 101, a confluence section, 102, a heating section, 103, a first spray section, 1021, a water inlet, 201, a backwash generation section, 202, a second spray section, 501, a three-way valve, 502, a first air inlet, 503, a second air inlet, 601, a first flowmeter, 602, a second flowmeter, 603, a first electromagnetic valve, 604, a third manual valve, 701, a third electromagnetic valve, a third flowmeter, a second electromagnetic valve, a first electromagnetic valve, a 702, a second electromagnetic valve, a water separator, a water pump, a 801, a second electromagnetic valve, a 801, a pneumatic valve, a water separator, a 801, and a water pipe.
Detailed Description
The following describes specific embodiments of the utility model with reference to the drawings and examples:
it should be noted that the structures, proportions, sizes, etc. shown in the drawings are merely for the purpose of understanding and reading the disclosure, and are not intended to limit the scope of the utility model, which is defined by the appended claims.
Also, the terms such as "upper," "lower," "left," "right," "middle," and "a" and the like recited in the present specification are merely for descriptive purposes and are not intended to limit the scope of the utility model, but are intended to provide relative positional changes or modifications without materially altering the technical context in which the utility model may be practiced.
The utility model is described in further detail below with reference to fig. 1-10.
The embodiment of the utility model discloses a toxic gas high-efficiency treatment device for a semiconductor production line.
Example 1
Referring to fig. 1 to 9, the embodiment discloses a toxic gas high-efficiency treatment device for a semiconductor production line, which comprises a mounting box 10, a water tank 11, a high-temperature reaction cavity 1, a water washing spray cavity 2, a second spray pipe 13 and a controller 17, wherein the water tank 11, the high-temperature reaction cavity 1 and the water washing spray cavity 2 are all arranged in the mounting box 10, the top of the water tank 11 is provided with the high-temperature reaction cavity 1 and the water washing spray cavity 2 in parallel, the three are in a U-shaped conduction structure, a plurality of air inlet pipes 5 are distributed on the side parts of the high-temperature reaction cavity 1 along the periphery Xiang Dengju, a three-way valve 501 for introducing toxic gas and nitrogen is arranged in the air inlet pipes 5, the second spray pipes 13 are respectively arranged in a first spray section 103 and a second spray section 202, water inlets of the second spray pipes are connected to the water tank 11 through a water return pipe 16 connected with a pump body and a first pressure sensor 20 in series, the multi-stage signal receiving end of the controller 17 is electrically connected with the first pressure sensor 20, the high-temperature reaction cavity 1, the water tank 11 and the water washing spray cavity 2 sequentially realize high-efficiency treatment of the toxic gas, and the second spray pipes 13 can spray the water to the maximum vertical treatment efficiency.
The high temperature reaction chamber 1 is from top to bottom divided into the conflux section 101 that is used for each intake pipe 5 to merge in proper order, heating section 102 and first spray section 103, all be equipped with a plurality of second shower 13 in first spray section 103 and the second spray section 202, and each second shower 13 is laid along vertical, high temperature reaction chamber 1 is used for pyrolysis toxic gas in this structure, high temperature reaction chamber 1 can be opened along the axial, make things convenient for later maintenance, prevent the dust in the harmful gas to take place to accumulate with nitrogen gas sweeps, a plurality of water inlet 1021 that is used for the interior circulating water entering of supply tank 11 has also been seted up along circumference to heating section 102's top.
The water spray separator 9 is connected in series on the water washing spray cavity 2, and the lower part of the water spray separator 9 in the water washing spray cavity 2 is provided with a second spray section 202, in the structure, the second spray section 202 is vertically divided into a plurality of parts, and each part is internally provided with a three-layer filter screen 22 for intercepting particulate matters in harmful gas.
Referring to fig. 7, the air-nitrogen combined type heating device further comprises an air conduit 12 and a nitrogen conduit 8, wherein the air conduit 12 is connected with a first manual valve 24 in series, the end part of the air conduit 12 is communicated with a second air inlet 503 of a three-way valve 501, the nitrogen conduit 8 is connected with a nitrogen distribution assembly 6 in series, the tail end of the nitrogen conduit 8 is bifurcated into a first branch pipe 801 communicated with the first air inlet 502 in the three-way valve 501 and a second branch pipe 802 communicated with a heating section 102, in this structure, the nitrogen distribution assembly 6 includes a first electromagnetic valve 603 and a third manual valve 604 connected in series to the main path of the nitrogen conduit 8, the first branch pipe 801 and the second branch pipe 802 are respectively connected in series with the second flowmeter 602 and the first flowmeter 601, the second flowmeter 602 and the first flowmeter 601 are both electrically connected to the signal receiving end of the controller 17, the signal transmitting end thereof is also electrically connected to the first electromagnetic valve 603, and the nitrogen distribution assembly 6 can reasonably distribute nitrogen to the second branch pipe 802 and the first branch pipe 801.
The novel water tank is characterized by further comprising a water inlet pipe 15 and a water return pipe 16 which are communicated with the water tank 11, wherein a check valve 19 for preventing fresh clean water from flowing backwards is connected in series on the water inlet pipe 15, a first pressure sensor 20 is connected in series on the water return pipe 16, the tail end of the first pressure sensor is connected to the first spray pipe 4, the tail end of a first manual valve 24 in the air conduit 12 in the novel water tank is divided into two branches, the first branches are communicated with a second air inlet 503, a plurality of liquid level sensors 25 are distributed in the water tank 11 at equal intervals along the vertical direction, and the liquid level sensors 25 and the first pressure sensor 20 are electrically connected to a signal receiving end of the controller 17.
The specific implementation process is as follows: harmful gas is introduced into the high-temperature reaction chamber 1 through the air conduit 12 and the second air inlet 503, meanwhile, nitrogen is also introduced into the high-temperature reaction chamber 1 through the nitrogen conduit 8, and the harmful gas is heated and decomposed in the high-temperature reaction chamber 1, and meanwhile, the decomposition is more intense by nitrogen sweeping; the harmful gas is subjected to primary water washing by the second spray pipe 13 in the high temperature reaction chamber 1, then enters the water washing spray chamber 2 through the water tank 1, and secondary water washing is completed in the water washing spray chamber 2, and then clean gas passes through the water mist separator 9 and is discharged outwards.
Example 2
Referring to fig. 1, and based on the above embodiment, the present embodiment further provides a toxic gas high-efficiency treatment device for a semiconductor production line, in which a water inlet pipe 15 and a water return pipe 16 are crossed and integrally provided, a ball valve 18 is connected in series on the water inlet pipe 15, the end of the water inlet pipe 15 is connected with a vertical pump 3, in this structure, a signal transmitting end of a controller 17 is electrically connected with the vertical pump 3, a second branch of an air conduit 12 is connected with a gas path end of the ball valve 18, and the ball valve 18 is closed when the second branch is used for introducing a toxic gas.
Example 3
Referring to fig. 10, and based on the above embodiment, the present embodiment further provides a toxic gas high-efficiency treatment device for a semiconductor production line, where the water inlet pipe 15 and the water return pipe 16 are mutually independent, the water return pipe 16 is sequentially connected in series with the circulation pump 21 and the fourth manual valve 23, the water inlet pipe 15 is connected in series with the water pump 26 and the water pump valve 27, the signal transmitting end of the controller 17 in the present structure is electrically connected to the circulation pump 21 and the water pump 26, and the gas paths of the two are connected to the second branch of the air conduit 12, where the second branch is used for closing the water pump 26 and the water pump valve 27 when the toxic gas is introduced.
Example 4
Referring to fig. 1 to 10, based on the above embodiment, the present embodiment further provides a toxic gas high-efficiency treatment device for a semiconductor production line, further comprising a backwash water inlet pipe 14 and a backwash assembly 7 connected in series to the backwash water inlet pipe 14, wherein a backwash generating section 201 is arranged between a second spray section 202 inside the water washing spray cavity 2 and the water mist separator 9, and the end of the backwash water inlet pipe 14 is inserted into the backwash generating section 201 and connected with a first spray pipe 4 in parallel.
Referring to fig. 8, the backwash assembly 7 includes a third flowmeter 701, a second pressure sensor 702, a second manual valve 703 and a pneumatic solenoid valve 704 connected in series to the backwash water inlet pipe 14, wherein the third flowmeter 701 and the second pressure sensor 702 are electrically connected to a signal receiving end of the controller 17, and a signal transmitting end thereof is also electrically connected to the pneumatic solenoid valve 704, and in this structure, the backwash assembly 7 and the backwash water pipe 16 are both disposed in the installation box 10.
Many other changes and modifications may be made without departing from the spirit and scope of the utility model. It is to be understood that the utility model is not to be limited to the specific embodiments, but only by the scope of the appended claims.
Claims (10)
1. The utility model provides a poisonous gas high-efficient processing apparatus of semiconductor production line, includes water tank (11), high temperature reaction chamber (1) and washing spray chamber (2) are installed side by side at water tank (11) top, and the three is U font and switches on form structure, its characterized in that still includes:
the high-temperature reaction chamber (1) is sequentially divided into a confluence section (101), a heating section (102) and a first spraying section (103) for merging the air inlet pipes (5) from top to bottom, and the high-temperature reaction chamber (1) is used for pyrolysis of toxic gas;
the water mist separator (9) is connected in series to the water washing spray cavity (2), a second spray section (202) is arranged below the water mist separator (9) in the water washing spray cavity (2), and the water mist separator (9) is used for dehydrating and discharging the washed harmful gas;
the second spray pipe (13), the said second spray pipe (13) is installed in said first spray section (103) and said second spray section (202) separately, its water inlet connects to the said water tank (11) through the return pipe (16) connecting pump body and first pressure sensor (20) in series;
and the signal receiving end of the controller (17) is electrically connected with the first pressure sensor (20), and the signal transmitting end of the controller is electrically connected with the pump body.
2. The high-efficiency treatment device for toxic gas in a semiconductor production line according to claim 1, further comprising a backwash water inlet pipe (14) and a backwash assembly (7) connected in series with the backwash water inlet pipe (14), wherein a backwash generation section (201) is arranged between the second spray section (202) and the water mist separator (9) in the water washing spray cavity (2), and the end part of the backwash water inlet pipe (14) is inserted into the backwash generation section (201) and connected with a first spray pipe (4).
3. The device for efficiently treating toxic gas in a semiconductor production line according to claim 2, wherein the backwash assembly (7) comprises a third flowmeter (701), a second pressure sensor (702), a second manual valve (703) and a pneumatic solenoid valve (704) connected in series to the backwash water inlet pipe (14), and the third flowmeter (701) and the second pressure sensor (702) are electrically connected to a signal receiving end of the controller (17), and a signal transmitting end thereof is electrically connected to the pneumatic solenoid valve (704).
4. The device for efficiently treating toxic gas in a semiconductor production line according to claim 3, further comprising a mounting box (10), wherein the water tank (11), the high-temperature reaction chamber (1), the water washing spray chamber (2), the water return pipe (16) and the backwashing assembly (7) are all arranged in the mounting box (10).
5. The efficient treatment device for toxic gas in a semiconductor production line according to claim 4, further comprising an air conduit (12) for inputting the toxic gas, wherein a first manual valve (24) is connected in series to the air conduit (12), and an end of the air conduit (12) is communicated with a second air inlet (503) of the three-way valve (501);
the nitrogen gas pipe (8) for introducing nitrogen gas is further included, the nitrogen gas pipe (8) is connected with the nitrogen gas distribution assembly (6) in series, and the tail end of the nitrogen gas pipe (8) is branched into a first branched pipe (801) communicated with a first air inlet (502) in the three-way valve (501) and a second branched pipe (802) communicated with the heating section (102).
6. The efficient treatment device for toxic gases in a semiconductor production line according to claim 5, wherein the nitrogen distribution assembly (6) comprises a first electromagnetic valve (603) and a third manual valve (604) connected in series to a main path of the nitrogen conduit (8), and the first branch pipe (801) and the second branch pipe (802) are respectively connected in series with a second flowmeter (602) and a first flowmeter (601);
the second flowmeter (602) and the first flowmeter (601) are both electrically connected to a signal receiving end of the controller (17), and a signal transmitting end of the second flowmeter is also electrically connected to the first electromagnetic valve (603).
7. The efficient toxic gas treatment device for the semiconductor production line according to claim 5, wherein a plurality of second spray pipes (13) are arranged in the first spray section (103) and the second spray section (202), and each second spray pipe (13) is vertically arranged.
8. The device for efficiently treating toxic gas in a semiconductor production line according to claim 5, further comprising a water inlet pipe (15) and a water return pipe (16) which are communicated with the water tank (11), wherein a check valve (19) for preventing fresh clean water from flowing backwards is connected in series to the water inlet pipe (15), a first pressure sensor (20) is connected in series to the water return pipe (16), and the tail end of the water return pipe is connected to the first spray pipe (4);
the air conduit (12) is characterized in that the tail end of the first manual valve (24) is divided into two branches, the first branch is communicated with the second air inlet (503), a plurality of liquid level sensors (25) are vertically distributed in the water tank (11) at equal intervals, and the liquid level sensors (25) and the first pressure sensor (20) are electrically connected to the signal receiving end of the controller (17).
9. The efficient toxic gas treatment device for the semiconductor production line according to claim 8, wherein the water inlet pipe (15) and the water return pipe (16) are arranged in a crossed mode, a ball valve (18) is connected to the water inlet pipe (15) in series, and a vertical pump (3) is connected to the end portion of the water inlet pipe (15);
the second branch of the air conduit (12) is connected to the air path end of the ball valve (18), and the second branch is used for closing the ball valve (18) when harmful gas is introduced.
10. The device for efficiently treating toxic gas in a semiconductor production line according to claim 8, wherein the water inlet pipe (15) and the water return pipe (16) are mutually independent, and the water return pipe (16) is sequentially connected with a circulating pump (21) and a fourth manual valve (23) in series;
the water inlet pipe (15) is connected with the water suction pump (26) and the water suction pump valve (27) in series, the air paths of the water suction pump (26) and the water suction pump valve (27) are connected to the second branch of the air conduit (12), and the second branch is used for closing the water suction pump (26) and the water suction pump valve (27) when harmful gas is introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321485760.7U CN220047680U (en) | 2023-06-12 | 2023-06-12 | High-efficient processing apparatus of semiconductor production line toxic gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321485760.7U CN220047680U (en) | 2023-06-12 | 2023-06-12 | High-efficient processing apparatus of semiconductor production line toxic gas |
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| Publication Number | Publication Date |
|---|---|
| CN220047680U true CN220047680U (en) | 2023-11-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321485760.7U Active CN220047680U (en) | 2023-06-12 | 2023-06-12 | High-efficient processing apparatus of semiconductor production line toxic gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220047680U (en) |
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2023
- 2023-06-12 CN CN202321485760.7U patent/CN220047680U/en active Active
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