CN220043223U - Intelligent power module - Google Patents

Abstract

The utility model discloses an intelligent power module, which comprises: a substrate provided with a conductive region; the power chip is arranged in the conductive area; the fast recovery diode is arranged in the conductive area and is electrically connected with the power chip; the driving module is electrically connected with the power chip and is used for driving the power chip; the short-circuit protection sub-module is at least partially arranged in the conductive area, and is respectively and electrically connected with the power chip and the driving module, and comprises a short-circuit protection diode which is integrated in the power chip; when the power chip is short-circuited, the short-circuit protection sub-module feeds back an electric signal to the driving module so that the driving module stops driving the power chip. According to the embodiment of the utility model, the circuit can be effectively protected, and the circuit has the advantages of low cost, low noise, high reliability and the like.

Description

Intelligent power module

Technical Field

The utility model relates to the technical field of intelligent power modules, in particular to an intelligent power module.

Background

In the related art, a short-circuit protection circuit is generally required to be arranged to perform short-circuit protection on an intelligent power module, in some technologies, the short-circuit protection circuit is arranged on an external circuit board of the intelligent power module, so that the volume of the circuit board is increased, the production cost of the circuit board is increased, the number of parts on the circuit board is increased, the welding points are increased, the reliability of the circuit board is easily reduced, the reliability of connection between the intelligent power module and the circuit board is further reduced, in addition, the electric signal transmission path between the short-circuit protection circuit and the intelligent power module is long, switching noise is easily generated, the circuit delay time is long, and if the circuit delay time exceeds the short-circuit tolerance time of a power chip of the intelligent power module, the protection action of the short-circuit protection circuit cannot be timely generated during short-circuit, and further the damage of the power chip cannot be effectively avoided.

In other technologies, the short-circuit protection circuit is arranged on the intelligent power module, but because the intelligent power module is small in size, the short-circuit protection circuit is easy to interfere with a driving circuit on the intelligent power module, and the functional stability and the miniaturization arrangement of the intelligent power module are not facilitated.

Disclosure of Invention

The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present utility model is to provide an intelligent power module, which can effectively protect a circuit, and has advantages of low cost, low noise, high reliability, and the like.

In order to achieve the above object, according to an embodiment of the present utility model, there is provided an intelligent power module including: a substrate provided with a conductive region; the power chip is arranged on the conductive area; the fast recovery diode is arranged in the conductive area and is electrically connected with the power chip; the driving module is electrically connected with the power chip and used for driving the power chip; a short-circuit protection sub-module, at least a part of which is arranged in the conductive area, wherein the short-circuit protection sub-module is respectively and electrically connected with the power chip and the driving module, the short-circuit protection sub-module comprises a short-circuit protection diode, and the short-circuit protection diode is integrated in the power chip; and when the power chip is short-circuited, the short-circuit protection sub-module feeds back an electric signal to the driving module so that the driving module stops driving the power chip.

The intelligent power module provided by the embodiment of the utility model can effectively protect the circuit and has the advantages of low cost, low noise, high reliability and the like.

According to some embodiments of the utility model, the short-circuit protection sub-module further comprises: the resistor is arranged in the conductive area, the cathode of the short-circuit protection diode is connected with the collector of the power chip, and one end of the resistor is connected with the anode of the short-circuit protection diode; and the capacitor is arranged in the conductive area, one end of the capacitor is connected with the other end of the resistor, and the other end of the capacitor is connected with the emitter of the power chip.

According to some embodiments of the utility model, the power chips are plural and include a low voltage power chip and a high voltage power chip; the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage power chip is arranged in the low-voltage conductive area, and the high-voltage power chip is arranged in the high-voltage conductive area; the driving module comprises a high-voltage driving sub-module and a low-voltage driving sub-module, the low-voltage power chip is electrically connected with the low-voltage driving sub-module, and the high-voltage power chip and the short-circuit protection sub-module are electrically connected with the high-voltage driving sub-module; the short-circuit protection diode is integrated in the high-voltage power chip, and the resistor and the capacitor are both arranged in the high-voltage conductive area.

According to some embodiments of the present utility model, the plurality of high voltage power chips are provided, the plurality of high voltage driving sub-modules are provided, the plurality of short circuit protection sub-modules are provided, the short circuit protection diodes of the plurality of short circuit protection sub-modules are integrated in the plurality of high voltage power chips in a one-to-one correspondence manner, and the plurality of short circuit protection sub-modules and the plurality of high voltage power chips are respectively connected with the plurality of high voltage driving sub-modules in a one-to-one correspondence manner.

According to some embodiments of the utility model, the high voltage conductive area is one, and the resistor and the capacitor of the plurality of high voltage power chips and the plurality of short circuit protection sub-modules are mounted on the high voltage conductive area.

According to some embodiments of the utility model, the low-voltage power chips are a plurality, and the number of the low-voltage power chips is the same as the number of the high-voltage power chips; the low-voltage conductive areas are multiple, and the low-voltage power chips are correspondingly arranged on the low-voltage conductive areas one by one.

According to some embodiments of the utility model, the high voltage power chips are three and the low voltage power chips are three.

According to some embodiments of the utility model, each of the short-circuit protection sub-modules further comprises: the comparison unit is provided with a first input end, a second input end and an output end, wherein the first input end is connected with the anode of the short-circuit protection diode, the second input end is suitable for being connected with the reference voltage of the power chip, and the output end is connected with the high-voltage driving sub-module corresponding to the short-circuit protection sub-module; the grid electrode of the MOS tube is connected with the high-voltage driving sub-module corresponding to the short-circuit protection sub-module, the source electrode of the MOS tube is connected with the other end of the capacitor, and the drain electrode of the MOS tube is connected with one end of the capacitor; the input end of the transformer is suitable for being connected with an external power supply, and the output end of the transformer is respectively connected with the one end of the resistor and the one end of the capacitor.

According to some embodiments of the utility model, the comparing unit, the MOS transistor and the transformer of each short-circuit protection sub-module are integrated in a high voltage driving sub-module corresponding to the short-circuit protection sub-module.

According to some embodiments of the utility model, the driving module is provided with a temperature detection unit connected to the cathode and the anode of the short-circuit protection diode, respectively, to determine the temperature of the power chip by detecting the voltage of the cathode and the voltage of the anode of the short-circuit protection diode.

Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.

Drawings

The foregoing and/or additional aspects and advantages of the utility model will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:

fig. 1 is a schematic diagram of a smart power module according to an embodiment of the present utility model.

Fig. 2 is another schematic diagram of a smart power module according to an embodiment of the utility model.

Fig. 3 is a schematic structural diagram of an intelligent power module according to an embodiment of the present utility model.

Fig. 4 is a detailed view at a of fig. 3.

Fig. 5 is a schematic structural diagram of an intelligent power module according to another embodiment of the present utility model.

Fig. 6 is a side view of a smart power module according to an embodiment of the present utility model.

Reference numerals:

1. an intelligent power module; 2. an external power source;

100. a substrate; 110. a conductive region; 111. a low voltage conductive region; 112. a high voltage conductive region;

200. a power chip; 210. a low voltage power chip; 220. a high voltage power chip; 230. a collector electrode; 240. an emitter; 250. a base;

300. a fast recovery diode;

400. a short circuit protection sub-module; 410. a short-circuit protection diode; 420. a resistor; 430. a capacitor; 440. a driving module; 441. a high voltage drive sub-module; 442. a low voltage drive sub-module; 450. a comparison unit; 451. a first input; 452. a second input terminal; 453. an output end; 460. a MOS tube; 461. a gate; 462. a source electrode; 463. a drain electrode; 470. a transformer;

500. and a temperature detection unit.

Detailed Description

Embodiments of the present utility model will be described in detail below, by way of example with reference to the accompanying drawings.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.

In the description of the utility model, a "first feature" or "second feature" may include one or more of such features.

In the description of the present utility model, "plurality" means two or more.

In the description of the utility model, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by another feature therebetween.

In the description of the utility model, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature.

The following describes the intelligent power module 1 (Intelligent Power Module, IPM) according to an embodiment of the present utility model with reference to the accompanying drawings.

As shown in fig. 1 to 6, the intelligent power module 1 according to an embodiment of the present utility model includes a substrate 100, a power chip 200 (Insulated Gate Bipolar Transistor, IGBT), a fast recovery diode (Fast recovery diode, RFD) 300, a driving module 440, and a short protection sub-module 400.

The substrate 100 is provided with a conductive area 110, the power chip 200 is mounted on the conductive area 110, the fast recovery diode 300 is mounted on the conductive area 110 and electrically connected with the power chip 200, and the driving module 440 is electrically connected with the power chip 200 for driving the power chip 200. At least a portion of the short-circuit protection sub-module 400 is mounted to the conductive region 110, and the short-circuit protection sub-module 400 is electrically connected to the power chip 200 and the driving module 440, respectively, and the short-circuit protection sub-module 400 includes a short-circuit protection diode 410, and the short-circuit protection diode 410 is integrated with the power chip 200. When the power chip 200 is shorted, the short-circuit protection sub-module 400 feeds back an electrical signal to the driving module 440, so that the driving module 440 stops driving the power chip 200.

The substrate 100 may be a copper-clad ceramic substrate 100, i.e., a copper-clad ceramic substrate (Direct Copper Bond, DBC) on both sides.

According to the intelligent power module 1 of the embodiment of the utility model, the substrate 100 is provided with the conductive area 110, the power chip 200 is mounted on the conductive area 110, and the fast recovery diode 300 is mounted on the conductive area 110 and electrically connected with the power chip 200, so that the power chip 200 and the fast recovery diode 300 can be electrically connected with the conductive area 110, electrical conduction can be realized among the substrate 100, the fast recovery diode 300 and the power chip 200, and electrical conduction can also be realized among the fast recovery diode 300 and the power chip 200, so that the intelligent power module 1 can work normally.

In addition, the driving module 440 is electrically connected to the power chip 200 for driving the power chip 200, at least a portion of the short-circuit protection sub-module 400 is mounted on the conductive area 110, and the short-circuit protection sub-module 400 is electrically connected to the power chip 200 and the driving module 440, respectively, and the short-circuit protection sub-module 400 includes a short-circuit protection diode 410, and the short-circuit protection diode 410 is integrated with the power chip 200. When the power chip 200 is shorted, the short-circuit protection sub-module 400 feeds back an electrical signal to the driving module 440, so that the driving module 440 stops driving the power chip 200.

Through installing the at least part of short-circuit protection sub-module 400 in electrically conductive district 110, short-circuit protection sub-module 400 need not to install on the external circuit board of intelligent power module 1, the volume of external circuit board can reduce, and then can reduce the manufacturing cost of external circuit board, improve the reliability of circuit board, moreover, short-circuit protection diode 410 is nearer with the distance of power chip 200, and need not to carry out the transmission of electrical signal through longer conductive circuit, can realize short-circuit protection function, the circuit delay shortens, when power chip 200 takes place the short-circuit, short-circuit protection sub-module 400 can carry out the protection action immediately, thereby can prevent effectively that power chip 200 from damaging because of the short circuit.

In addition, by integrating the short-circuit protection diode 410 into the power chip 200, compared with an intelligent power module in which the short-circuit protection diode and the power chip are separately arranged on the substrate in the prior art, the gap between the short-circuit protection diode 410 and the power chip 200 can be effectively reduced, so that the whole volume of the short-circuit protection diode 410 and the whole volume of the power chip 200 are smaller, the arrangement space is reduced, the layout and the installation of the short-circuit protection sub-module 400 and the power chip 200 on the substrate 100 are more convenient, the probability of position interference of the short-circuit protection sub-module 400 and other components is reduced, in addition, the wiring of the intelligent power module 1 can be simplified after the short-circuit protection diode 410 and the power chip 200 are integrated, and meanwhile, parasitic resistance, parasitic inductance and parasitic capacitance are reduced, and error detection and error actions caused by noise influence caused by wiring are effectively reduced.

Thus, the intelligent power module 1 according to the embodiment of the utility model can effectively protect the circuit and has the advantages of low cost, low noise, high reliability and the like.

In some embodiments of the present utility model, as shown in fig. 1-6, the short protection sub-module 400 further includes a resistor 420 and a capacitor 430.

Resistor 420 is mounted on conductive region 110, the cathode of short-circuit protection diode 410 is connected to collector 230 of power chip 200, one end of resistor 420 is connected to the anode of short-circuit protection diode 410, capacitor 430 is mounted on conductive region 110, one end of capacitor 430 is connected to the other end of resistor 420, and the other end of capacitor 430 is connected to emitter 240 of power chip 200.

In this way, the resistor 420 can be used to limit the current flowing through the short-circuit protection diode 410, so as to improve the accuracy of the short-circuit protection sub-module 400 in detecting whether the power chip 200 reaches the short-circuit voltage. The capacitor 430 may be used to charge, and prevent malfunction by preventing the driving module 440 from stopping driving the power chip 200 in the case where the collector-emitter Voltage (VCE) of the power chip 200 rises only for a short time. Also, by integrating the short protection diode 410 with the power chip 200, it is possible to secure a sufficient area for mounting the resistor 420 and the capacitor 430, and the resistor 420 and the capacitor 430 are more conveniently mounted.

In addition, when the power chip 200 is turned on, the short-circuit protection diode 410 is turned on, the potential of the short-circuit protection diode 410 is the sum of the collector-emitter Voltage (VCE) and the forward direct current (VF) of the power chip 200, the potential of the resistor 420 is the product of the resistance value of the resistor 420 and the forward direct current (IF) of the power chip 200, the driving potential of the capacitor 430 is the sum of the potential of the short-circuit protection diode 410 and the potential of the resistor 420, and when the power chip 200 is shorted, the saturation voltage VCEsat rises rapidly, but because the capacitor 430 needs to be charged, the driving potential of the capacitor 430 rises slowly, the duration of the saturation voltage VCEsat of the power chip 200 must be longer than the blanking time of the capacitor 430, so that the short-circuit protection sub-module 400 can determine that the power chip 200 has indeed been shorted, and further can filter repeated short-high current pulses to prevent erroneous operation and improve the reliability and accuracy of detecting whether the short circuit has occurred.

In some embodiments of the present utility model, as shown in fig. 3, the power chip 200 is plural and includes a low voltage power chip 210 and a high voltage power chip 220, the conductive area 110 is plural, the plurality of conductive areas 110 includes a low voltage conductive area 111 and a high voltage conductive area 112, the low voltage power chip 210 is mounted on the low voltage conductive area 111, and the high voltage power chip 220 is mounted on the high voltage conductive area 112. The driving module 440 includes a high voltage driving sub-module 441 and a low voltage driving sub-module 442, the low voltage power chip 210 is electrically connected with the low voltage driving sub-module 442, and the high voltage power chip 220 and the short circuit protection sub-module 400 are electrically connected with the high voltage driving sub-module 441. The short protection diode 410 is integrated into the high voltage power chip 220, and the resistor 420 and the capacitor 430 are both mounted in the high voltage conductive region 112.

In the intelligent power module 1, the signal voltage of the high voltage power chip 220 is floating, so the standard of the detection of the high voltage power chip 220 may not be uniform, so by integrating the short-circuit protection diode 410 into the high voltage power chip 220, the whole volume of the short-circuit protection diode 410 and the high voltage power chip 220 is compact, that is, the whole occupied space of the short-circuit protection diode 410 and the high voltage power chip 220 may be small, and the wiring among the short-circuit protection diode 410, the high voltage power chip 220, the capacitor 430 and the resistor 420 can be simplified, so that the high voltage conductive area 112 has enough space to install the resistor 420 and the capacitor 430, and the short-circuit protection sub-module 400 does not interfere with the driving module in the high voltage conductive area 112.

In some embodiments of the present utility model, as shown in fig. 3, the plurality of high voltage power chips 220, the plurality of high voltage driving sub-modules 441, the plurality of short circuit protection sub-modules 400, the plurality of short circuit protection diodes 410 of the plurality of short circuit protection sub-modules 400 are integrated in the plurality of high voltage power chips 220 in a one-to-one correspondence, and the plurality of short circuit protection sub-modules 400, the plurality of high voltage driving sub-modules 441 and the plurality of short circuit protection diodes 410 are connected in a one-to-one correspondence.

In this way, each short-circuit protection diode 410 can perform short-circuit protection on one high-voltage power chip 220, and each resistor 420 and capacitor 430 can respectively control the current and voltage of one short-circuit protection diode 410, which is beneficial to improving the short-circuit protection effect of the short-circuit protection sub-module 400 on a plurality of high-voltage power chips 220, and effectively avoiding any short-circuit damage to any high-voltage power chip 220.

In some embodiments of the present utility model, as shown in fig. 3, one high voltage conductive area 112, a plurality of high voltage power chips 220, a plurality of resistors 420 and capacitors 430 of the short protection sub-module 400 are mounted on the high voltage conductive area 112. In this way, the difficulty in arranging the high-voltage conductive areas 112 can be reduced, the substrate 100 only needs to be provided with one high-voltage conductive area 112, and the high-voltage conductive areas 112 corresponding to the high-voltage power chips 220, the resistors 420 or the capacitors 430 are not required to be provided, so that the processing difficulty of the substrate 100 is greatly reduced, the production cost is reduced, and the circuit performance of the intelligent power module 1 is also optimized.

In addition, by mounting the high voltage power chip 220 and the resistors 420 and the capacitors 430 of the plurality of short circuit protection sub-modules 400 in the high voltage conductive area 112, the distance between the short circuit protection diode 410 and the resistor 420 and the capacitor 430 can be small, connection is facilitated, and the resistor 420 and the capacitor 430 can be arranged near the high voltage power chip 220, so that the influence of noise can be suppressed, and false detection and false operation due to the noise influence caused by wiring can be avoided, so that parasitic resistance, parasitic inductance and parasitic capacitance can be reduced.

In some embodiments of the present utility model, as shown in fig. 3, the number of low-voltage power chips 210 is multiple, the number of low-voltage power chips 210 is the same as the number of high-voltage power chips 220, the number of low-voltage conductive areas 111 is multiple, and the plurality of low-voltage power chips 210 are mounted on the plurality of low-voltage conductive areas 111 in a one-to-one correspondence. In this way, each low-voltage power chip 210 can be electrically connected with one low-voltage conductive area 111, so that interference between adjacent low-voltage power chips 210 can be avoided, and reliability of electrical connection can be improved.

In some embodiments of the present utility model, as shown in fig. 3, there are three high voltage power chips 220 and three low voltage power chips 210.

For example, three low voltage power chips 210 may be arranged along the length direction of the smart power module 1, and three high voltage power chips 220 may be arranged along the length direction of the smart power module 1. In this way, the intelligent power module 1 can form a three-phase bridge circuit, and the low-voltage power chip 210 and the high-voltage power chip 220 are more convenient to be connected with the driving chip respectively, so that the layout of the intelligent power module 1 is convenient.

In some embodiments of the present utility model, as shown in fig. 1 and 2, each short protection sub-module 400 further includes a comparison unit 450 and a MOS transistor 460 (metal oxide semiconductor, metal-oxide-semiconductor).

The comparing unit 450 has a first input end 451, a second input end 452 and an output end 453, the first input end 451 is connected with the anode of the short-circuit protection diode 410, the second input end 452 is suitable for being connected with the reference voltage (Vref) of the power chip 200, the output end 453 is connected with the high voltage driving sub-module 441 corresponding to the short-circuit protection sub-module 400, the gate 461 of the MOS tube 460 is connected with the high voltage driving sub-module 441 corresponding to the short-circuit protection sub-module 400, the source 462 of the MOS tube 460 is connected with the other end of the capacitor 430, and the drain 463 of the MOS tube 460 is connected with the one end of the capacitor 430.

For example, the reference voltage value is typically about 6V to 9V depending on the characteristics of each power chip 200 itself, and the source 462 of the mos transistor 460 may be grounded.

When the power chip 200 is turned off, the driving module 440 can control the MOS transistor 460 to be turned on, and the MOS transistor 460 discharges the capacitor 430 to facilitate the reuse of the capacitor 430.

Specifically, when the intelligent power module 1 operates, the second input terminal 452 of the comparing unit 450 obtains the reference voltage of the high-voltage power chip 220, and the first input terminal 451 inputs the collector-emitter Voltage (VCE) of the high-voltage power chip 220, and compares the reference voltage with the collector-emitter Voltage (VCE), and when the collector-emitter Voltage (VCE) is greater than the reference voltage, the comparing unit 450 outputs an electrical signal to the driving module 440, the driving module 440 can determine whether the power chip 200 is shorted according to the electrical signal of the comparing unit 450, and the comparing unit 450 stops driving the power chip 200 to be turned off when determining that the power chip 200 is shorted.

In some embodiments of the present utility model, each short-circuit protection sub-module 400 also includes a transformer 470, as shown in fig. 1 and 2.

One end of the transformer 470 is connected to the external power source 2, and the other end of the transformer 470 is connected to the one end of the resistor 420 and the one end of the capacitor 430, respectively.

For example, the external power source 2 may be 15V.

Therefore, the transformer 470 can reduce the output voltage of the external power supply 2 or increase the output voltage of the external voltage, so that the integrated pole of the power chip 200 can have stable input voltage through the resistor 420 and the short-circuit protection diode 410, thereby meeting the power consumption requirement of the intelligent power module 1 and ensuring that the integrated pole of the power chip 200 is a constant current source.

In some embodiments of the present utility model, as shown in fig. 3 and 4, the comparing unit 450, the MOS transistor 460, and the transformer 470 of each short-circuit protection sub-module 400 are integrated into the high voltage driving sub-module 441 corresponding to the short-circuit protection sub-module 400. In this way, the integration level of the driving module 440 is higher, the structure of the comparing unit 450, the MOS tube 460 and the transformer 470 can be more compact, the overall occupied space of the comparing unit 450, the MOS tube 460 and the transformer 470 can be smaller, the driving module 440 and the short-circuit protection sub-module 400 can be conveniently laid out, the position interference between the short-circuit protection sub-module 400 and the driving module is avoided, and the wiring of the high-voltage conductive area 112 is facilitated.

In some embodiments of the present utility model, as shown in fig. 2, the driving module is provided with a temperature detection unit 500, and the temperature detection unit 500 is connected to the cathode and the anode of the short protection diode 410, respectively, to determine the temperature of the power chip 200 by detecting the voltage of the cathode and the voltage of the anode of the short protection diode 410.

When the power chip 200 is normally turned on, since the constant current flows, the capacitor 430 is not charged, the short-circuit protection diode 410 is sensitive to temperature variation, and the temperature of the power chip 200 can be determined by detecting the voltage across the short-circuit protection diode 410 and using the temperature characteristic of the short-circuit protection diode 410.

In which the power chip 200 must not be used above an absolute maximum rated value and must be driven at a temperature lower than a prescribed temperature, for example, the temperature of the power chip 200 needs to be lower than 150 ℃, since the short-circuit protection diode 410 is integrated in the power chip 200, by using the voltage of the cathode and the voltage of the anode of the short-circuit protection diode 410, the temperature of the power chip 200 can be directly monitored at the time of actual operation thereof by using the temperature characteristics of the short-circuit protection diode 410, the available area can be comprehensively operated and finely controlled so that the temperature of the power chip 200 does not exceed the maximum rated value, and in addition, when the temperature detection unit 500 detects that the temperature of the power chip 200 exceeds the maximum rated value, the instantaneous turn-off of the power chip 200 can be performed by the logic chip 440 to protect the power chip 200.

Other constructions and operations of the intelligent power module 1 according to the embodiment of the present utility model are known to those skilled in the art, and will not be described in detail herein.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.

While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. An intelligent power module, comprising:

a substrate provided with a conductive region;

the power chip is arranged on the conductive area;

the fast recovery diode is arranged in the conductive area and is electrically connected with the power chip;

the driving module is electrically connected with the power chip and used for driving the power chip;

a short-circuit protection sub-module, at least a part of which is arranged in the conductive area, wherein the short-circuit protection sub-module is respectively and electrically connected with the power chip and the driving module, the short-circuit protection sub-module comprises a short-circuit protection diode, and the short-circuit protection diode is integrated in the power chip;

and when the power chip is short-circuited, the short-circuit protection sub-module feeds back an electric signal to the driving module so that the driving module stops driving the power chip.

2. The intelligent power module of claim 1, wherein the short-circuit protection sub-module further comprises:

the resistor is arranged in the conductive area, the cathode of the short-circuit protection diode is connected with the collector of the power chip, and one end of the resistor is connected with the anode of the short-circuit protection diode;

and the capacitor is arranged in the conductive area, one end of the capacitor is connected with the other end of the resistor, and the other end of the capacitor is connected with the emitter of the power chip.

3. The intelligent power module of claim 2, wherein the power chips are a plurality and include a low voltage power chip and a high voltage power chip;

the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage power chip is arranged in the low-voltage conductive area, and the high-voltage power chip is arranged in the high-voltage conductive area;

the driving module comprises a high-voltage driving sub-module and a low-voltage driving sub-module, the low-voltage power chip is electrically connected with the low-voltage driving sub-module, and the high-voltage power chip and the short-circuit protection sub-module are electrically connected with the high-voltage driving sub-module;

the short-circuit protection diode is integrated in the high-voltage power chip, and the resistor and the capacitor are both arranged in the high-voltage conductive area.

4. The intelligent power module according to claim 3, wherein the plurality of high-voltage power chips are provided, the plurality of high-voltage driving sub-modules are provided, the plurality of short-circuit protection sub-modules are provided, the short-circuit protection diodes of the plurality of short-circuit protection sub-modules are integrated in the plurality of high-voltage power chips in a one-to-one correspondence manner, and the plurality of short-circuit protection sub-modules and the plurality of high-voltage power chips are respectively connected with the plurality of high-voltage driving sub-modules in a one-to-one correspondence manner.

5. The intelligent power module according to claim 4, wherein said high voltage conductive area is one, a plurality of said high voltage power chips, a plurality of said short circuit protection sub-modules, and resistors and capacitors are mounted on said high voltage conductive area.

6. The intelligent power module of claim 5, wherein the number of low voltage power chips is the same as the number of high voltage power chips;

the low-voltage conductive areas are multiple, and the low-voltage power chips are correspondingly arranged on the low-voltage conductive areas one by one.

7. The intelligent power module of claim 6, wherein the number of high voltage power chips is three and the number of low voltage power chips is three.

8. The intelligent power module of claim 4, wherein each of said short circuit protection sub-modules further comprises:

the comparison unit is provided with a first input end, a second input end and an output end, wherein the first input end is connected with the anode of the short-circuit protection diode, the second input end is suitable for being connected with the reference voltage of the power chip, and the output end is connected with the high-voltage driving sub-module corresponding to the short-circuit protection sub-module;

the grid electrode of the MOS tube is connected with the high-voltage driving sub-module corresponding to the short-circuit protection sub-module, the source electrode of the MOS tube is connected with the other end of the capacitor, and the drain electrode of the MOS tube is connected with one end of the capacitor;

the input end of the transformer is suitable for being connected with an external power supply, and the output end of the transformer is respectively connected with the one end of the resistor and the one end of the capacitor.

9. The intelligent power module according to claim 8, wherein the comparing unit, the MOS transistor, and the transformer of each of the short-circuit protection sub-modules are integrated in a high voltage driving sub-module corresponding to the short-circuit protection sub-module.

10. The intelligent power module according to any of claims 1-9, wherein the drive module is provided with a temperature detection unit connected to the cathode and the anode of the short-circuit protection diode, respectively, for determining the temperature of the power chip by detecting the voltage of the cathode and the voltage of the anode of the short-circuit protection diode.